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    • 6. 发明申请
    • Method Of Producing Microsprings Having Nanowire Tip Structures
    • 具有纳米线尖端结构的微管生产方法
    • US20090159996A1
    • 2009-06-25
    • US11963507
    • 2007-12-21
    • Eugene ChowPengfei Qi
    • Eugene ChowPengfei Qi
    • H01L29/84H01L21/00
    • B81C1/0015B81B2203/019B81B2207/07B82Y10/00
    • A stress-engineered microspring is formed generally in the plane of a substrate. A nanowire (or equivalently, a nanotube) is formed at the tip thereof, also in the plane of the substrate. Once formed, the length of the nanowire may be defined, for example photolithographically. A sacrificial layer underlying the microspring may then be removed, allowing the engineered stresses in the microspring to cause the structure to bend out of plane, elevating the nanowire off the substrate and out of plane. Use of the nanowire as a contact is thereby provided. The nanowire may be clamped at the tip of the microspring for added robustness. The nanowire may be coated during the formation process to provide additional functionality of the final device.
    • 应力工程微球通常在基底的平面上形成。 纳米线(或等效地,纳米管)也形成在其顶端,也在基板的平面中。 一旦形成,可以例如光刻地限定纳米线的长度。 然后可以去除位于微弹簧下面的牺牲层,允许微弹簧中的工程应力使结构弯曲出平面,从而使纳米线离开基底并离开平面。 由此提供了使用纳米线作为接触。 可以将纳米线夹在微弹簧的尖端,以增加坚固性。 在形成过程中可以涂覆纳米线以提供最终装置的附加功能。
    • 7. 发明申请
    • Microsprings Having Nanowire Tip Structures
    • 具有纳米线尖端结构的微管
    • US20110167526A1
    • 2011-07-07
    • US13045042
    • 2011-03-10
    • Eugene ChowPengfei Qi
    • Eugene ChowPengfei Qi
    • G01Q70/08B82Y30/00
    • B81C1/0015B81B2203/019B81B2207/07B82Y10/00
    • A stress-engineered microspring is formed generally in the plane of a substrate. A nanowire (or equivalently, a nanotube) is formed at the tip thereof, also in the plane of the substrate. Once formed, the length of the nanowire may be defined, for example photolithographically. A sacrificial layer underlying the microspring may then be removed, allowing the engineered stresses in the microspring to cause the structure to bend out of plane, elevating the nanowire off the substrate and out of plane. Use of the nanowire as a contact is thereby provided. The nanowire may be clamped at the tip of the microspring for added robustness. The nanowire may be coated during the formation process to provide additional functionality of the final device.
    • 应力工程微球通常在基底的平面上形成。 纳米线(或等效地,纳米管)也在其顶端形成在基板的平面中。 一旦形成,可以例如光刻地限定纳米线的长度。 然后可以去除位于微弹簧下面的牺牲层,允许微弹簧中的工程应力使结构弯曲出平面,从而使纳米线离开基底并离开平面。 由此提供了使用纳米线作为接触。 可以将纳米线夹在微弹簧的末端以增加坚固性。 在形成过程中可以涂覆纳米线以提供最终装置的附加功能。
    • 9. 发明申请
    • Method Of Producing Microsprings Having Nanowire Tip Structures
    • 具有纳米线尖端结构的微管生产方法
    • US20110163061A1
    • 2011-07-07
    • US13044933
    • 2011-03-10
    • Eugene ChowPengfei Qi
    • Eugene ChowPengfei Qi
    • C03C25/68B05D1/32B82Y40/00
    • B81C1/0015B81B2203/019B81B2207/07B82Y10/00
    • A stress-engineered microspring is formed generally in the plane of a substrate. A nanowire (or equivalently, a nanotube) is formed at the tip thereof, also in the plane of the substrate. Once formed, the length of the nanowire may be defined, for example photolithographically. A sacrificial layer underlying the microspring may then be removed, allowing the engineered stresses in the microspring to cause the structure to bend out of plane, elevating the nanowire off the substrate and out of plane. Use of the nanowire as a contact is thereby provided. The nanowire may be clamped at the tip of the microspring for added robustness. The nanowire may be coated during the formation process to provide additional functionality of the final device.
    • 应力工程微球通常在基底的平面上形成。 纳米线(或等效地,纳米管)也在其顶端形成在基板的平面中。 一旦形成,可以例如光刻地限定纳米线的长度。 然后可以去除位于微弹簧下面的牺牲层,允许微弹簧中的工程应力使结构弯曲出平面,从而使纳米线离开基底并离开平面。 由此提供了使用纳米线作为接触。 可以将纳米线夹在微弹簧的末端以增加坚固性。 在形成过程中可以涂覆纳米线以提供最终装置的附加功能。
    • 10. 发明申请
    • Composite Nanorod-Based Structures for Generating Electricity
    • 用于发电的复合纳米棒基结构
    • US20110089402A1
    • 2011-04-21
    • US12757825
    • 2010-04-09
    • Pengfei Qi
    • Pengfei Qi
    • H01L31/0352H01L31/18B82Y99/00B82Y40/00
    • H01L31/035281H01L31/03529H01L31/03921H01L31/068H01L31/1804Y02E10/547Y02P70/521
    • One aspect of the invention involves an article of manufacture that includes a dielectric layer with an array of pores, and an array of nanowires at least partially contained within the array of pores. A respective nanowire in the array of nanowires is formed within a respective pore in the array of pores. Nanowires in the array of nanowires include a core semiconducting region with a first type of, a shell semiconducting region with a second type of doping, and a junction region between the core semiconducting region and the shell semiconducting. Additionally, the article of manufacture includes a first conducting layer electrically coupled to a plurality of shell semiconducting regions for a plurality of nanowires in the array of nanowires, as well as a second conducting layer electrically coupled to a plurality of core semiconducting regions for a plurality of nanowires in the array of nanowires.
    • 本发明的一个方面涉及一种包括具有孔阵列的电介质层和至少部分地包含在孔阵列内的纳米线阵列的制品。 纳米线阵列中的相应纳米线在孔阵列中的相应孔内形成。 纳米线阵列中的纳米线包括具有第一类型的核半导体区域,具有第二类掺杂的壳半导体区域,以及在核半导体区域和壳半导体层之间的结区域。 另外,制品包括电耦合到多个纳米线阵列中的多个纳米线的多个壳半导体区域的第一导电层,以及电耦合到多个芯部半导体区域的第二导电层,用于多个 的纳米线阵列中的纳米线。