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    • 3. 发明授权
    • Producing layered structures with lamination
    • 生产层压结构
    • US07755156B2
    • 2010-07-13
    • US11959187
    • 2007-12-18
    • Michael L. ChabinycTse Nga Ng
    • Michael L. ChabinycTse Nga Ng
    • H01L31/0224
    • H01L51/0024
    • A layered structure can include laminated first and second substructures and an array with cell regions. The first substructure can include layered active circuitry, the second a top electrode layer. One or both substructure's surface that contacts the other can be on a polymer-containing layer, structured to generate free charge carriers and/or to transport charge carriers. A cell region of the array can include portions of each substructure; the cell region's portion of the first substructure can include a subregion of electrically conductive material and a subregion of semiconductive material, its portion of the second can include part of the top electrode layer. The layered structure can include one or more lamination artifacts on or in the polymer-containing layer; the lamination artifacts can include artifacts of contact pressure, or heat, or of surface shape, and the interface surface can be without vias.
    • 分层结构可以包括层叠的第一和第二子结构以及具有单元区域的阵列。 第一子结构可以包括分层有源电路,第二个是电极顶层。 与另一个接触的一个或两个子结构的表面可以在聚合物含有层上,其被构造成产生无电荷载流子和/或输送电荷载体。 阵列的单元区域可以包括每个子结构的部分; 第一子结构的单元区域的部分可以包括导电材料的次级区域和半导体材料的次级区域,其第二区域的部分可以包括顶部电极层的一部分。 层状结构可以包括在含聚合物层上或其中的一个或多个层压伪影; 层压伪影可以包括接触压力或热或表面形状的伪像,并且界面表面可以没有通孔。
    • 4. 发明授权
    • Producing layered structures with layers that transport charge carriers in which each of a set of channel regions or portions operates as an acceptable switch
    • 生成具有传输电荷载体的层的分层结构,其中一组沟道区域或部分中的每一个作为可接受的开关工作
    • US07586080B2
    • 2009-09-08
    • US11959901
    • 2007-12-19
    • Michael L. ChabinycTse Nga Ng
    • Michael L. ChabinycTse Nga Ng
    • H01J40/14
    • H01L27/307H01L51/0036H01L51/0039H01L51/0043H01L51/0545
    • Layered structures such as photosensing arrays include layers in which charge carriers can be transported. For example, a carrier-transporting substructure that includes a solution processing artifact can transport charge carriers that flow to or from it through charge-flow surface parts that are on electrically conductive regions of a circuitry substructure; the circuitry substructure can also have channel surface parts that are on semiconductive channel regions, with a set of the channel regions operating as acceptable switches in an application. Or a first substructure's surface can have carrier-active surface parts on electrode regions and line surface parts on line regions; a second substructure can include a transport layer on carrier-active surface parts and, over it, an electrically conductive layer; to prevent leakage, an open region can be defined in the electrically conductive layer over the line surface part and/or an electrically insulating layer portion can cover the line surface part.
    • 诸如光敏阵列的分层结构包括其中可以输送电荷载体的层。 例如,包括溶液处理伪影的载流子传输子结构可以传输通过电子子结构的导电区域上的电荷流表面部分流过或流过的电荷载流子; 电路子结构还可以具有位于半导体沟道区上的沟道表面部分,一组沟道区在应用中作为可接受的开关工作。 或者第一子结构的表面可以在电极区域上具有载流子表面部分和在线区域上的线表面部分; 第二子结构可以包括载体活性表面部分上的传输层,并且在其上面包括导电层; 为了防止泄漏,可以在导线层上在线表面部分上限定开放区域和/或电绝缘层部分可以覆盖线表面部分。
    • 5. 发明申请
    • PROTECTING SEMICONDUCTING OXIDES
    • 保护半导体氧化物
    • US20090108304A1
    • 2009-04-30
    • US11924678
    • 2007-10-26
    • Tse Nga NgMichael L. Chabinyc
    • Tse Nga NgMichael L. Chabinyc
    • H01L29/78H01L21/31H01L21/3205
    • H01L29/7869
    • In transistor structures such as thin film transistors (TFTs) in an array of cells, a layer of semiconducting oxide material that includes a channel is protected by a protective layer that includes low-temperature encapsulant material. The semiconducting oxide material can be a transition metal oxide material such as zinc oxide, and can be in an active layered substructure that also includes channel end electrodes. The low-temperature encapsulant can, for example, be an organic polymer such as poly(methyl methacrylate) or parylene, deposited on an exposed region of the oxide layer such as by spinning, spin-casting, evaporation, or vacuum deposition or an inorganic polymer deposited such as by spinning or liquid deposition. The protective layer can include a lower sublayer of low-temperature encapsulant on the exposed region and an upper sublayer of inorganic material on the lower sublayer. For roll-to-roll processing, a mechanically flexible, low-temperature substrate can be used.
    • 在诸如单元阵列中的薄膜晶体管(TFT)的晶体管结构中,包括沟道的半导体氧化物材料层被包括低温密封剂材料的保护层所保护。 半导体氧化物材料可以是过渡金属氧化物材料如氧化锌,并且可以是还包括沟道端电极的活性层状子结构。 例如,低温密封剂可以是诸如聚(甲基丙烯酸甲酯)或聚对二甲苯之类的有机聚合物,例如通过纺丝,旋转浇铸,蒸发或真空沉积沉积在氧化物层的暴露区域上,或无机物 聚合物沉积如通过纺丝或液体沉积。 保护层可以包括暴露区域上的低温密封剂的下部子层和下部子层上的无机材料的上部子层。 对于卷对卷加工,可以使用机械柔性的低温基材。
    • 6. 发明授权
    • Producing layered structures with semiconductive regions or subregions
    • 用半导体区域或分区域生成分层结构
    • US08283655B2
    • 2012-10-09
    • US11960874
    • 2007-12-20
    • Michael L. ChabinycTse Nga Ng
    • Michael L. ChabinycTse Nga Ng
    • H01L51/00
    • H01L51/0558H01L27/14692H01L27/307H01L51/0541H01L51/0545
    • In layered structures, channel regions and light-interactive regions can include the same semiconductive polymer material, such as with an organic polymer. A light-interactive region can be in charge-flow contact with a contacting electrode region, and a channel region can, when conductive, provide an electrical connection between the contacting electrode region and other circuitry. For example, free charge carriers can be generated in the light-interactive region, resulting in a capacitively stored signal level; the signal level can be read out to other circuitry by turning on a transistor that includes the channel region. In an array of photosensing cells with organic thin film transistors, an opaque insulating material can be patterned to cover a data line and channel regions of cells along the line, but not extend entirely over the cells' light-interactive regions.
    • 在层状结构中,沟道区和光交互区可以包括相同的半导体聚合物材料,例如与有机聚合物。 光交互区域可以与接触电极区域进行电荷流动接触,并且当导电时,沟道区域可以在接触电极区域和其它电路之间提供电连接。 例如,可以在光交互区域中产生自由电荷载体,导致电容存储的信号电平; 通过接通包括沟道区的晶体管,可以将信号电平读出到其它电路。 在具有有机薄膜晶体管的光敏单元的阵列中,不透明绝缘材料可以被图案化以覆盖沿着线的单元的数据线和沟道区,但不能完全延伸在单元的光交互区上。
    • 7. 发明授权
    • Producing layered structures with layers that transport charge carriers
    • 生成具有传输电荷载体的层的分层结构
    • US07786430B2
    • 2010-08-31
    • US12482610
    • 2009-06-11
    • Michael L. ChabinycTse Nga Ng
    • Michael L. ChabinycTse Nga Ng
    • H01J5/02
    • H01L27/307H01L51/0036H01L51/0039H01L51/0043H01L51/0545
    • Layered structures such as photosensing arrays include layers in which charge carriers can be transported. For example, a carrier-transporting substructure that includes a solution processing artifact can transport charge carriers that flow to or from it through charge-flow surface parts that are on electrically conductive regions of a circuitry substructure; the circuitry substructure can also have channel surface parts that are on semiconductive channel regions, with a set of the channel regions operating as acceptable switches in an application. Or a first substructure's surface can have carrier-active surface parts on electrode regions and line surface parts on line regions; a second substructure can include a transport layer on carrier-active surface parts and, over it, an electrically conductive layer; to prevent leakage, an open region can be defined in the electrically conductive layer over the line surface part and/or an electrically insulating layer portion can cover the line surface part.
    • 诸如光敏阵列的分层结构包括其中可以输送电荷载体的层。 例如,包括溶液处理伪影的载流子传输子结构可以传输通过电路子结构的导电区域上的电荷流表面部分流过或流过的载流子; 电路子结构还可以具有位于半导体沟道区上的沟道表面部分,一组沟道区在应用中作为可接受的开关工作。 或者第一子结构的表面可以在电极区域上具有载流子表面部分和在线区域上的线表面部分; 第二子结构可以包括载体活性表面部分上的传输层,并且在其上面包括导电层; 为了防止泄漏,可以在导线层上在线表面部分上限定开放区域和/或电绝缘层部分可以覆盖线表面部分。
    • 8. 发明申请
    • Protecting Semiconducting Oxides
    • 保护半导体氧化物
    • US20120326149A1
    • 2012-12-27
    • US13603383
    • 2012-09-04
    • Tse Nga NgMichael L. Chabinyc
    • Tse Nga NgMichael L. Chabinyc
    • H01L29/786
    • H01L29/7869
    • In transistor structures such as thin film transistors (TFTs) in an array of cells, a layer of semiconducting oxide material that includes a channel is protected by a protective layer that includes low-temperature encapsulant material. The semiconducting oxide material can be a transition metal oxide material such as zinc oxide, and can be in an active layered substructure that also includes channel end electrodes. The low-temperature encapsulant can, for example, be an organic polymer such as poly(methyl methacrylate) or parylene, deposited on an exposed region of the oxide layer such as by spinning, spincasting, evaporation, or vacuum deposition or an inorganic polymer deposited such as by spinning or liquid deposition. The protective layer can include a lower sublayer of low-temperature encapsulant on the exposed region and an upper sublayer of inorganic material on the lower sublayer. For roll-to-roll processing, a mechanically flexible, low-temperature substrate can be used.
    • 在诸如单元阵列中的薄膜晶体管(TFT)的晶体管结构中,包括沟道的半导体氧化物材料层被包括低温密封剂材料的保护层所保护。 半导体氧化物材料可以是过渡金属氧化物材料如氧化锌,并且可以是还包括沟道端电极的活性层状子结构。 例如,低温密封剂可以是诸如聚(甲基丙烯酸甲酯)或聚对二甲苯的有机聚合物,例如通过纺丝,旋涂,蒸发或真空沉积沉积在氧化物层的暴露区域上,或沉积无机聚合物 例如通过纺丝或液体沉积。 保护层可以包括暴露区域上的低温密封剂的下部子层和下部子层上的无机材料的上部子层。 对于卷对卷加工,可以使用机械柔性的低温基材。
    • 9. 发明申请
    • Producing Layered Structures With Layers That Transport Charge Carriers
    • 生产带运输电荷载体的分层结构
    • US20090243020A1
    • 2009-10-01
    • US12482610
    • 2009-06-11
    • Michael L. ChabinycTse Nga Ng
    • Michael L. ChabinycTse Nga Ng
    • H01L31/0224G03G15/02G03G5/047G03G5/06
    • H01L27/307H01L51/0036H01L51/0039H01L51/0043H01L51/0545
    • Layered structures such as photosensing arrays include layers in which charge carriers can be transported. For example, a carrier-transporting substructure that includes a solution processing artifact can transport charge carriers that flow to or from it through charge-flow surface parts that are on electrically conductive regions of a circuitry substructure; the circuitry substructure can also have channel surface parts that are on semiconductive channel regions, with a set of the channel regions operating as acceptable switches in an application. Or a first substructure's surface can have carrier-active surface parts on electrode regions and line surface parts on line regions; a second substructure can include a transport layer on carrier-active surface parts and, over it, an electrically conductive layer; to prevent leakage, an open region can be defined in the electrically conductive layer over the line surface part and/or an electrically insulating layer portion can cover the line surface part.
    • 诸如光敏阵列的分层结构包括其中可以输送电荷载体的层。 例如,包括溶液处理伪影的载流子传输子结构可以传输通过电路子结构的导电区域上的电荷流表面部分流过或流过的载流子; 电路子结构还可以具有位于半导体沟道区上的沟道表面部分,一组沟道区在应用中作为可接受的开关工作。 或者第一子结构的表面可以在电极区域上具有载流子表面部分和在线区域上的线表面部分; 第二子结构可以包括载体活性表面部分上的传输层,并且在其上面包括导电层; 为了防止泄漏,可以在导线层上在线表面部分上限定开放区域和/或电绝缘层部分可以覆盖线表面部分。
    • 10. 发明申请
    • Producing Layered Structures With Lamination
    • 生产分层结构
    • US20090152534A1
    • 2009-06-18
    • US11959187
    • 2007-12-18
    • Michael L. ChabinycTse Nga Ng
    • Michael L. ChabinycTse Nga Ng
    • H01L51/46
    • H01L51/0024
    • A layered structure can include laminated first and second substructures and an array with cell regions. The first substructure can include layered active circuitry, the second a top electrode layer. One or both substructure's surface that contacts the other can be on a polymer-containing layer, structured to generate free charge carriers and/or to transport charge carriers. A cell region of the array can include portions of each substructure; the cell region's portion of the first substructure can include a subregion of electrically conductive material and a subregion of semiconductive material, its portion of the second can include part of the top electrode layer. The layered structure can include one or more lamination artifacts on or in the polymer-containing layer; the lamination artifacts can include artifacts of contact pressure, or heat, or of surface shape, and the interface surface can be without vias.
    • 分层结构可以包括层叠的第一和第二子结构以及具有单元区域的阵列。 第一子结构可以包括分层有源电路,第二个是电极顶层。 与另一个接触的一个或两个子结构的表面可以在聚合物含有层上,其被构造成产生无电荷载流子和/或输送电荷载体。 阵列的单元区域可以包括每个子结构的部分; 第一子结构的单元区域的部分可以包括导电材料的次级区域和半导体材料的次级区域,其第二区域的部分可以包括顶部电极层的一部分。 层状结构可以包括在含聚合物层上或其中的一个或多个层压伪影; 层压伪影可以包括接触压力或热或表面形状的伪像,并且界面表面可以没有通孔。