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1. 发明授权

US5534106A Apparatus for processing semiconductor wafers 失效
标题翻译：半导体晶圆处理装置
公开(公告)号：US5534106A
公开(公告)日：1996-07-09
申请号：US280818
申请日：1994-07-26
申请人： William J. Cote , James G. Ryan , Katsuya Okumura , Hiroyuki Yano
发明人： William J. Cote , James G. Ryan , Katsuya Okumura , Hiroyuki Yano
IPC分类号： H01L21/304 , B24B37/04 , B24D13/14 , B24B37/00 , H01L21/00
CPC分类号： B24B37/26 , B24B37/04 , Y10S451/921
摘要： The invention is directed to a semi-conductor wafer processing machine including an arm having a wafer carrier disposed at one end. The wafer carrier is rotatable with the rotating motion imparted to a semi-conductor wafer held thereon. In first embodiment, the machine further includes a rotatable polishing pad having an upper surface divided into a plurality of wedge-shaped sections, including an abrasion section and a polishing section. The abrasion section has a relatively rough texture and the polishing section has a relatively fine texture as compared to each other. In an alternative embodiment, the pad includes an underlayer and surface layer. The surface layer includes two sections of differing hardness, both of which are harder than the underlayer. Alternatively, the surface layer may include one relatively hard section, and the underlayer may include two sections, one of which has the same hardness as the surface layer and the other of which is softer than the surface layer. In a further embodiment, the polishing pad has an annular shape, and a chemical processing table is disposed within the open central region of the pad.
摘要翻译：本发明涉及一种半导体晶片加工机械，其包括具有设置在其一端的晶片载体的臂。晶片载体可转动，转动运动被施加到保持在其上的半导体晶片。在第一实施例中，机器还包括可旋转的抛光垫，其具有被分成多个楔形部分的上表面，该楔形部分包括磨损部分和抛光部分。磨损部分具有相对粗糙的结构，并且抛光部分具有相对于彼此相对较细的结构。在替代实施例中，垫包括底层和表面层。表面层包括两个不同于硬度的部分，它们都比底层更硬。或者，表面层可以包括一个相对硬的部分，并且底层可以包括两个部分，其中一个部分具有与表面层相同的硬度，而另一个部分比表面层更软。在另一实施例中，抛光垫具有环形形状，并且化学处理台设置在垫的开放中心区域内。

2. 发明授权

US5593537A Apparatus for processing semiconductor wafers 失效
标题翻译：半导体晶圆处理装置
公开(公告)号：US5593537A
公开(公告)日：1997-01-14
申请号：US613944
申请日：1996-03-13
申请人： William J. Cote , James G. Ryan , Katsuya Okumura , Hiroyuki Yano
发明人： William J. Cote , James G. Ryan , Katsuya Okumura , Hiroyuki Yano
IPC分类号： H01L21/304 , B24B37/04 , B24D13/14 , H01L21/00
CPC分类号： B24B37/26 , B24B37/04 , Y10S451/921
摘要： The invention is directed to a semi-conductor wafer processing machine including an arm having a wafer carrier disposed at one end. The wafer carrier is rotatable with the rotating motion imparted to a semi-conductor wafer held thereon. In first embodiment, the machine further includes a rotatable polishing pad having an upper surface divided into a plurality of wedge-shaped sections, including an abrasion section and a polishing section. The abrasion section has a relatively rough texture and the polishing section has a relatively fine texture as compared to each other. In an alternative embodiment, the pad includes an underlayer and surface layer. The surface layer includes two sections of differing hardness, both of which are harder than the underlayer. Alternatively, the surface layer may include one relatively hard section, and the underlayer may include two sections, one of which has the same hardness as the surface layer and the other of which is softer than the surface layer. In a further embodiment, the polishing pad has an annular shape, and a chemical processing table is disposed within the open central region of the pad.
摘要翻译：本发明涉及一种半导体晶片加工机械，其包括具有设置在其一端的晶片载体的臂。晶片载体可转动，转动运动被施加到保持在其上的半导体晶片。在第一实施例中，机器还包括可旋转的抛光垫，其具有被分成多个楔形部分的上表面，该楔形部分包括磨损部分和抛光部分。磨损部分具有相对粗糙的结构，并且抛光部分具有相对于彼此相对较细的结构。在替代实施例中，垫包括底层和表面层。表面层包括两个不同于硬度的部分，它们都比底层更硬。或者，表面层可以包括一个相对硬的部分，并且底层可以包括两个部分，其中一个部分具有与表面层相同的硬度，而另一个部分比表面层更软。在另一实施例中，抛光垫具有环形形状，并且化学处理台设置在垫的开放中心区域内。

3. 发明授权

US5636258A In-situ temperature measurement using X-ray diffraction 失效
$In-situ temperature measurement using X-ray diffraction$
标题翻译：使用X射线衍射的原位温度测量
公开(公告)号：US5636258A
公开(公告)日：1997-06-03
申请号：US554209
申请日：1995-10-24
申请人： Katsuya Okumura , James G. Ryan , Gregory B. Stephenson , Hans-Joerg Timme
发明人： Katsuya Okumura , James G. Ryan , Gregory B. Stephenson , Hans-Joerg Timme
IPC分类号： G01K11/30 , G01N23/207 , G21K5/02 , H01L21/66
CPC分类号： G01K11/30 , G01N23/207
摘要： A non-contact in-situ temperature measurement apparatus for a single crystal substrate such as a semiconductor wafer using X-ray diffraction. Utilizing the Bragg condition for X-ray diffraction, the lattice constant of the semiconductor substrate can be determined either by measuring the diffraction angle for a monochromatic X-ray (monochromatic approach) or by measuring the wavelength of an X-ray diffracted with a certain scattering angle (polychromatic approach). The lattice constant, as a well-known function of temperature, is finally converted into the temperature of the semiconductor substrate.
摘要翻译：一种用于单晶衬底（例如使用X射线衍射的半导体晶片）的非接触式现场温度测量装置。利用用于X射线衍射的布拉格条件，半导体衬底的晶格常数可以通过测量单色X射线（单色法）的衍射角或通过测量以某种方式衍射的X射线的波长来确定散射角（多色方法）。作为公知的温度函数的晶格常数最终转换为半导体衬底的温度。

4. 发明授权

US06740590B1 AQUEOUS DISPERSION, AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING USED FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, AND METHOD FOR FORMATION OF EMBEDDED WRITING 有权
标题翻译：用于制造半导体器件的化学机械抛光的水性分散体，用于制造半导体器件的方法和用于形成嵌入式布线的方法
公开(公告)号：US06740590B1
公开(公告)日：2004-05-25
申请号：US09531163
申请日：2000-03-17
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Akira Iio , Masayuki Hattori
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Akira Iio , Masayuki Hattori
IPC分类号： H01L21302
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1436 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： The object of the present invention is to provide an aqueous dispersion that can give the required properties for a wide range of uses including electronic materials, magnetic materials, optical materials and polishing materials, and to provide an aqueous dispersion for chemical mechanical polishing (CMP slurry) that gives an adequate polishing rate without creating scratches in polishing surfaces. Another object of the present invention is, to provide a method for manufacture of semiconductor devices using a CMP slurry that can control progressive erosion due to scratches and the like during polishing and that can achieve efficient flattening of working films, and to provide a method for formation of embedded wiring. The aqueous dispersion or CMP slurry of the present invention contains polymer particles made of thermoplastic resins or the like, and inorganic particles made of alumina, silica or the like, wherein the zeta potentials of the polymer particles and inorganic particles are of opposite signs, and they are bonded by electrostatic force to form aggregates as composite particles. The aggregates are subjected to ultrasonic wave irradiation or shear stress with a homogenizer to give more uniformly dispersed composite particles.
摘要翻译：本发明的目的是提供一种水性分散体，其可以为包括电子材料，磁性材料，光学材料和抛光材料在内的广泛用途提供所需的性能，并提供用于化学机械抛光的水性分散体（CMP浆料），其提供足够的抛光速率，而不会在抛光表面中产生划痕。本发明的另一个目的是提供一种使用CMP浆料制造半导体器件的方法，所述CMP浆料可以在抛光期间控制由划痕等引起的逐渐侵蚀，并且可以实现工作膜的有效平坦化，并提供一种方法形成嵌入式布线。本发明的水性分散体或CMP浆料含有由热塑性树脂等构成的聚合物颗粒和由氧化铝，二氧化硅等制成的无机颗粒，其中聚合物颗粒和无机颗粒的ζ电位具有相反的标志，它们通过静电力结合以形成作为复合颗粒的聚集体。聚集体用均化器进行超声波照射或剪切应力，得到更均匀分散的复合颗粒。

5. 发明授权

US06722964B2 Polishing apparatus and method 有权
标题翻译：抛光设备和方法
公开(公告)号：US06722964B2
公开(公告)日：2004-04-20
申请号：US09824644
申请日：2001-04-04
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuya Okumura , You Ishii , Junji Kunisawa , Hiroyuki Yano
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuya Okumura , You Ishii , Junji Kunisawa , Hiroyuki Yano
IPC分类号： B24B100
CPC分类号： B24B37/345 , B24B9/065 , B24B37/12 , H01L21/67046
摘要： A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.
摘要翻译：抛光装置和方法具有将形成在基板上的膜的表面抛光至平面镜面的功能，以及抛光沉积在基板的外周部分上的不需要的金属膜如铜膜的功能，以去除这种不必要的金属电影。抛光装置包括表面抛光机构，其包括具有抛光表面的抛光台和用于保持基板的顶环，并将基板压靠在抛光台的抛光表面上，从而抛光基板的表面，以及外周抛光用于抛光衬底的外周部分的机构。

6. 发明授权

US06409780B1 Water-laden solid matter of vapor-phase processed inorganic oxide particles and slurry for polishing and manufacturing method of semiconductor devices 有权
标题翻译：气相处理无机氧化物颗粒的含水固体物质和用于半导体器件的抛光和制造方法的浆料
公开(公告)号：US06409780B1
公开(公告)日：2002-06-25
申请号：US09482937
申请日：2000-01-14
申请人： Hiroyuki Yano , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Kiyonobu Kubota
发明人： Hiroyuki Yano , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Kiyonobu Kubota
IPC分类号： C09K314
CPC分类号： C09G1/02 , C09K3/1463
摘要： Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm3 in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.
摘要翻译：提供含水固体物质，其通过向通过热解法或金属蒸发氧化法合成的100重量份的无机氧化物颗粒中加入40至300重量份的水而获得，提供了通过使用水 - 负载固体物质，以及使用上述浆料制造半导体器件的方法。所述含水固体物质的体积密度为0.3〜3g / cm 3，制粒时的平均粒径为0.5〜100mmφ的范围。用于抛光的所述浆料由含水固体物质制成，其在分散在水中的平均粒径在0.05-1.0μm的范围内。

7. 发明授权

US5876273A Apparatus for polishing a wafer 失效
标题翻译：用于抛光晶片的设备
公开(公告)号：US5876273A
公开(公告)日：1999-03-02
申请号：US625291
申请日：1996-04-01
申请人： Hiroyuki Yano , Katsuya Okumura , Norio Kimura , Tomoyuki Yahiro , Hozumi Yasuda
发明人： Hiroyuki Yano , Katsuya Okumura , Norio Kimura , Tomoyuki Yahiro , Hozumi Yasuda
IPC分类号： B24B37/30 , B24B29/02
CPC分类号： B24B37/30
摘要： A polishing apparatus is provided which improves uniformity across the surface of a polished wafer. The apparatus includes a wafer carrier, a guide ring coupled to a lower portion of the wafer carrier, a circular plate coupled to a first inner circumference portion of the guide ring distant from the wafer carrier, and a cavity, formed within an area bounded by the lower portion of the wafer carrier, an inner circumference of the circular plate, and a second inner circumference portion of the guide ring between the circular plate and the lower portion of the wafer carrier, the circular plate holding the wafer to be polished in the cavity.
摘要翻译：提供了一种改善抛光晶片表面均匀性的抛光装置。该装置包括晶片载体，联接到晶片载体的下部的引导环，耦合到远离晶片载体的引导环的第一内周部分的圆形板，以及形成在由晶片载体的下部，圆形板的内圆周和导向环的第二内周部分在圆形板和晶片载体的下部之间，圆形板将待抛光的晶片保持在腔。

8. 发明授权

US07291057B2 Apparatus for polishing a substrate 有权
标题翻译：用于抛光衬底的装置
公开(公告)号：US07291057B2
公开(公告)日：2007-11-06
申请号：US10601789
申请日：2003-06-24
申请人： Norio Kimura , Yu Ishii , Hirokuni Hiyama , Katsuya Okumura , Hiroyuki Yano
发明人： Norio Kimura , Yu Ishii , Hirokuni Hiyama , Katsuya Okumura , Hiroyuki Yano
IPC分类号： B24B49/00 , B24B1/00
CPC分类号： B24B37/013 , B24B37/042 , B24B49/04 , H01L21/02074 , H01L21/3212 , H01L21/76807
摘要： A method of polishing substrates enables the size of a polishing table to be reduced. A surface of a substrate to be polished is brought into contact with a polishing surface of a polishing table in such a manner that a portion of the surface of the substrate extends outwardly from an outer periphery of the polishing surface. The substrate is rotated about its center axis while keeping its surface in contact with the polishing surface of the polishing table. The attitude of the substrate carrier is controlled so that the surface of the substrate is kept parallel with the polishing surface of the polishing table during a polishing operation.
摘要翻译：研磨基板的方法能够减小抛光台的尺寸。将要抛光的基底的表面以与研磨台的抛光表面接触的方式使得基底表面的一部分从抛光表面的外周向外延伸。衬底围绕其中心轴线旋转，同时保持其表面与抛光台的抛光表面接触。控制基板载体的姿态，使得在抛光操作期间基板的表面与抛光台的抛光表面保持平行。

9. 发明申请

US20050260933A1 Polishing apparatus and method 有权
标题翻译：抛光设备和方法
公开(公告)号：US20050260933A1
公开(公告)日：2005-11-24
申请号：US11187944
申请日：2005-07-25
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuya Okumura , You Ishii , Junji Kunisawa , Hiroyuki Yano
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuya Okumura , You Ishii , Junji Kunisawa , Hiroyuki Yano
IPC分类号： B24B9/06 , B24B37/12 , B24B37/34 , H01L21/00 , B24B49/00
CPC分类号： B24B37/345 , B24B9/065 , B24B37/12 , H01L21/67046
摘要： A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.
摘要翻译：抛光装置和方法具有将形成在基板上的膜的表面抛光至平面镜面的功能，以及抛光沉积在基板的外周部分上的不需要的金属膜如铜膜的功能，以去除这种不必要的金属电影。抛光装置包括表面抛光机构，其包括具有抛光表面的抛光台和用于保持基板的顶环，并将基板压靠在抛光台的抛光表面上，从而抛光基板的表面，以及外周抛光用于抛光衬底的外周部分的机构。

10. 发明授权

US06924236B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06924236B2
公开(公告)日：2005-08-02
申请号：US09870085
申请日：2001-05-30
申请人： Hiroyuki Yano , Katsuya Okumura
发明人： Hiroyuki Yano , Katsuya Okumura
IPC分类号： H01L21/302 , H01L21/02 , H01L21/304 , H01L21/306 , H01L21/3065 , H01L21/321 , H01L21/768 , H01L21/8242
CPC分类号： H01L21/02087 , H01L21/304 , H01L21/3212 , H01L21/7684 , H01L27/1087 , H01L27/10882
摘要： The present invention provides a method of manufacturing a semiconductor device, comprising the step of selectively grinding or polishing the peripheral portion and the beveled portion of a target substrate including a semiconductor substrate. The grinding or polishing of the target substrate is performed after the dry etching step for forming a trench in the target substrate, or after the depositing step of a copper layer providing a source of contamination of the process apparatus in forming a Cu-buried wiring. By grinding or polishing the peripheral portion and the beveled portion of the target substrate, the uneven portion in the peripheral portion and the beveled portion can be removed and copper is prevented from being exposed to the outside, thereby avoiding the particle generation and contamination of the process apparatus.
摘要翻译：本发明提供一种制造半导体器件的方法，包括选择性研磨或抛光包括半导体衬底的目标衬底的周边部分和斜面部分的步骤。目标衬底的研磨或抛光在用于在目标衬底中形成沟槽的干蚀刻步骤之后，或者在形成铜掩埋布线之后提供处理装置的污染源的铜层沉积步骤之后进行。通过研磨或抛光目标基板的周边部分和斜面部分，可以去除周边部分和斜面部分中的不平坦部分，并且防止铜暴露于外部，从而避免了颗粒的产生和污染处理装置。

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