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    • 2. 发明授权
    • Carry-select adder with pre-counting of leading zero digits
    • 进位选择加法器,前置零位预计数
    • US5875123A
    • 1999-02-23
    • US765419
    • 1997-05-13
    • Son Dao TrongGunter GerwigKlaus GetzlaffWilhelm Haller
    • Son Dao TrongGunter GerwigKlaus GetzlaffWilhelm Haller
    • G06F7/485G06F7/00G06F7/50G06F7/507G06F7/74G06F7/42
    • G06F7/74G06F7/485
    • A method and apparatus for the determination of leading zero digits of a sum is presented herein. The technique incorporates the parallel determination of partial sums of single digits accounting for the possibility of carries and on the basis thereof the pre-determination of potential zero digits or potential leading zero digits. Upon the establishment of a correct partial sum, the potential zero digits are selected and evaluated thereby determining the leading zero digits. The invention may be implemented in an adder in parallel or via a hierarchical structure. The parallelism permits time-savings in the determination of a normalized sum. The invention is preferably incorporated into adders, floating point computing units and/or data processing units.
    • PCT No.PCT / EP95 / 01455 Sec。 371日期1997年5月13日 102(e)日期1997年5月13日PCT提交1995年4月18日PCT公布。 公开号WO96 / 33456 日期1996年10月24日本文给出了用于确定和的前导零数字的方法和装置。 该技术包含了对携带可能性的单位数部分和的并行确定,并且在此基础上预先确定了潜在的零位或潜在的前导零位。 在建立正确的部分和时,选择和评估潜在的零数字,从而确定前导零数字。 本发明可以并行地或通过分层结构在加法器中实现。 并行性允许在确定归一化总和时节省时间。 本发明优选地结合到加法器,浮点计算单元和/或数据处理单元中。
    • 3. 发明授权
    • Multi-port static random access memory with fast write-thru scheme
    • 具有快速写入方案的多端口静态随机存取存储器
    • US5473574A
    • 1995-12-05
    • US14031
    • 1993-02-05
    • Rainer ClemenKlaus Getzlaff
    • Rainer ClemenKlaus Getzlaff
    • G11C11/41G11C8/16G11C8/00
    • G11C8/16
    • A fast write-thru scheme is proposed for use in a multi-port static random access memory. This is achieved by operating the read and write ports of the SRAM circuitry in two separate but interleaved stages. In a first stage, a write path is set up comprising a write address decoder, an AND gate connected to a clock signal, the AND gate enabling a write port coupled to the latch of a memory cell. In the second stage, a read path is set up comprising a read address decoder selecting a read port, through which data is read from the cell latch to a data out buffer. To minimize the write-thru access time, the synchronous read path controlled by the read address is interleaved with the write path triggered by a write clock (CE), so that the read address is delayed with respect to the clock and the write addresses. Thus the write-thru access time becomes independent from the write time needed for overwriting the multi-port SRAM cell and equal to the read address access time achieved in a fully static or synchronous read operation.
    • 提出了一种用于多端口静态随机存取存储器的快速写入方案。 这是通过将SRAM电路的读和写端口操作在两个单独但交错的级中来实现的。 在第一阶段,设置写入路径,其包括写入地址解码器,连接到时钟信号的与门,该与门使能耦合到存储器单元的锁存器的写入端口。 在第二阶段中,设置读取路径,该读取路径包括选择读取端口的读取地址解码器,通过该读取端口将数据从单元锁存器读取到数据输出缓冲器。 为了最小化写入访问时间,由读取地址控制的同步读取路径与由写入时钟(CE)触发的写入路径交错,使得读取地址相对于时钟和写入地址被延迟。 因此,写入访问时间与覆盖多端口SRAM单元所需的写入时间无关,并且等于在完全静态或同步读取操作中实现的读取地址访问时间。