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1. 发明申请

US20090255806A1 METHODS AND SYSTEMS FOR REMOVING MATERIALS FROM MICROFEATURE WORKPIECES WITH ORGANIC AND/OR NON-AQUEOUS ELECTROLYTIC MEDIA 审中-公开
标题翻译：用有机和/或非水电解介质从微生物工具中去除材料的方法和系统
公开(公告)号：US20090255806A1
公开(公告)日：2009-10-15
申请号：US12488062
申请日：2009-06-19
申请人： Whonchee Lee , Gundu M. Sabde
发明人： Whonchee Lee , Gundu M. Sabde
IPC分类号： C23F13/00
CPC分类号： H01L21/30625 , B23H5/08 , C25F1/00 , C25F3/02 , C25F3/08
摘要： Methods and systems for removing materials from microfeature workpieces are disclosed. A method in accordance with one embodiment of the invention includes providing a microfeature workpiece having a substrate material and a conductive material that includes a refractory metal (e.g., tantalum, tantalum nitride, titanium, and/or titanium nitride). First and second electrodes are positioned in electrical communication with the conductive material via a generally organic and/or non-aqueous electrolytic medium. At least one of the electrodes is spaced apart from the workpiece. At least a portion of the conductive material is removed by passing an electrical current along an electrical path that includes the first electrode, the electrolytic medium, and the second electrode. Electrolytically removing the conductive material can reduce the downforce applied to the workpiece.
摘要翻译：公开了从微特征工件中去除材料的方法和系统。根据本发明的一个实施例的方法包括提供具有基底材料和包括难熔金属（例如钽，氮化钽，钛和/或氮化钛）的导电材料的微特征工件。第一和第二电极经由通常有机和/或非水电解介质与导电材料电连通。至少一个电极与工件间隔开。通过使电流沿着包括第一电极，电解介质和第二电极的电路通过电流来去除导电材料的至少一部分。电解去除导电材料可以降低施加到工件的下压力。

2. 发明授权

US06383934B1 Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids 失效
公开(公告)号：US06383934B1
公开(公告)日：2002-05-07
申请号：US09652955
申请日：2000-08-31
申请人： Gundu M. Sabde , James J. Hofmann , Michael J. Joslyn , Whonchee Lee
发明人： Gundu M. Sabde , James J. Hofmann , Michael J. Joslyn , Whonchee Lee
IPC分类号： H01L2100
CPC分类号： B24B37/0056 , B24B37/042
摘要： A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the method can include planarizing the microelectronic substrate with a fixed abrasive polishing pad while maintaining the pH of a planarizing liquid adjacent the polishing pad at an approximately constant level by buffering the planarizing liquid. The planarizing liquid can include ammonium hydroxide and ammonium acetate, ammonium citrate, or potassium hydrogen phthalate. In another embodiment, the planarizing liquid can have an initially high pH that has a reduced tendency to decrease during planarization. The planarizing liquid can also include agents, such as isopropyl alcohol, ammonium acetate or polyoxy ethylene ether that can increase the wetted surface area of the microelectronic substrate and/or reduce drag force imparted to the microelectronic substrate by the polishing pad.

3. 发明授权

US06881127B2 Method and apparatuses for planarizing microelectronic substrate assemblies 有权
标题翻译：用于平面化微电子衬底组件的方法和装置
公开(公告)号：US06881127B2
公开(公告)日：2005-04-19
申请号：US09915657
申请日：2001-07-25
申请人： Gundu M. Sabde , Whonchee Lee
发明人： Gundu M. Sabde , Whonchee Lee
IPC分类号： B24B21/04 , B24B37/24 , B24B37/26 , C10M125/20 , C10M129/08 , C10M145/04 , C10M145/28 , C10M145/30 , C10M173/02 , C10N20/02 , C10N40/00 , H01L21/304 , B24B1/00
CPC分类号： B24B37/245 , B24B21/04 , B24B37/26 , B24D2203/00
摘要： Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attached to the body at the planarizing surface. The front face of a substrate assembly is pressed against the lubricating planarizing solution and at least a portion of the fixed abrasive particles on the planarizing surface of the polishing pad. At least one of the polishing pad or the substrate assembly is then moved with respect to the other to impart relative motion therebetween. As the substrate assembly moves relative to the polishing pad, regions of the front face are separated from the abrasive particles in the polishing pad by a lubricant-additive in the lubricating planarizing solution.
摘要翻译：在具有非磨蚀性润滑平坦化溶液的固定研磨抛光垫上平面化微电子基板组件的方法和装置。本发明的一个方面是将没有磨料颗粒的润滑平坦化溶液沉积在具有主体，主体上的平坦化表面的固定磨料抛光垫上，以及在平坦化表面处固定地附接到主体的多个磨料颗粒。衬底组件的前表面被压在抛光垫的平坦化表面上的润滑平坦化溶液和固定磨料颗粒的至少一部分上。然后抛光垫或基板组件中的至少一个相对于另一个移动以在其间进行相对运动。当基板组件相对于抛光垫移动时，前表面的区域通过润滑平面化溶液中的润滑剂添加剂与抛光垫中的磨料颗粒分离。

4. 发明授权

US07138072B2 Methods and apparatuses for planarizing microelectronic substrate assemblies 失效
公开(公告)号：US07138072B2
公开(公告)日：2006-11-21
申请号：US10155659
申请日：2002-05-24
申请人： Gundu M. Sabde , Whonchee Lee
发明人： Gundu M. Sabde , Whonchee Lee
IPC分类号： C09K13/00
CPC分类号： B24B37/245 , B24B21/04 , B24B37/26 , B24D2203/00
摘要： Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attached to the body at the planarizing surface. The front face of a substrate assembly is pressed against the lubricating planarizing solution and at least a portion of the fixed abrasive particles on the planarizing surface of the polishing pad. At least one of the polishing pad or the substrate assembly is then moved with respect to the other to impart relative motion therebetween. As the substrate assembly moves relative to the polishing pad, regions of the front face are separated from the abrasive particles in the polishing pad by a lubricant-additive in the lubricating planarizing solution.

5. 发明授权

US07566391B2 Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media 失效
标题翻译：用有机和/或非水电解介质从微型工件除去材料的方法和系统
公开(公告)号：US07566391B2
公开(公告)日：2009-07-28
申请号：US10933053
申请日：2004-09-01
申请人： Whonchee Lee , Gundu M. Sabde
发明人： Whonchee Lee , Gundu M. Sabde
IPC分类号： C25F3/16
CPC分类号： H01L21/30625 , B23H5/08 , C25F1/00 , C25F3/02 , C25F3/08
摘要： Methods and systems for removing materials from microfeature workpieces are disclosed. A method in accordance with one embodiment of the invention includes providing a microfeature workpiece having a substrate material and a conductive material that includes a refractory metal (e.g., tantalum, tantalum nitride, titanium, and/or titanium nitride). First and second electrodes are positioned in electrical communication with the conductive material via a generally organic and/or non-aqueous electrolytic medium. At least one of the electrodes is spaced apart from the workpiece. At least a portion of the conductive material is removed by passing an electrical current along an electrical path that includes the first electrode, the electrolytic medium, and the second electrode. Electrolytically removing the conductive material can reduce the downforce applied to the workpiece.
摘要翻译：公开了从微特征工件中去除材料的方法和系统。根据本发明的一个实施例的方法包括提供具有基底材料和包括难熔金属（例如钽，氮化钽，钛和/或氮化钛）的导电材料的微特征工件。第一和第二电极经由通常有机和/或非水电解介质与导电材料电连通。至少一个电极与工件间隔开。通过使电流沿着包括第一电极，电解介质和第二电极的电路通过电流来去除导电材料的至少一部分。电解去除导电材料可以降低施加到工件的下压力。

6. 发明授权

US06903018B2 Methods and apparatuses for planarizing microelectronic substrate assemblies 有权
标题翻译：用于平面化微电子衬底组件的方法和装置
公开(公告)号：US06903018B2
公开(公告)日：2005-06-07
申请号：US09915658
申请日：2001-07-25
申请人： Gundu M. Sabde , Whonchee Lee
发明人： Gundu M. Sabde , Whonchee Lee
IPC分类号： B24B21/04 , B24B37/24 , B24B37/26 , C10M125/20 , C10M129/08 , C10M145/04 , C10M145/28 , C10M145/30 , C10M173/02 , C10N20/02 , C10N40/00 , H01L21/304 , H01L21/302
CPC分类号： B24B37/245 , B24B21/04 , B24B37/26 , B24D2203/00
摘要： Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attached to the body at the planarizing surface. The front face of a substrate assembly is pressed against the lubricating planarizing solution and at least a portion of the fixed abrasive particles on the planarizing surface of the polishing pad. At least one of the polishing pad or the substrate assembly is then moved with respect to the other to impart relative motion therebetween. As the substrate assembly moves relative to the polishing pad, regions of the front face are separated from the abrasive particles in the polishing pad by a lubricant-additive in the lubricating planarizing solution.
摘要翻译：在具有非磨蚀性润滑平坦化溶液的固定研磨抛光垫上平面化微电子基板组件的方法和装置。本发明的一个方面是将没有磨料颗粒的润滑平坦化溶液沉积到具有主体，主体上的平坦化表面的固定研磨抛光垫上，以及在平坦化表面处固定地附接到主体的多个磨料颗粒。衬底组件的前表面被压在抛光垫的平坦化表面上的润滑平坦化溶液和固定磨料颗粒的至少一部分上。然后抛光垫或基板组件中的至少一个相对于另一个移动以在其间进行相对运动。当基板组件相对于抛光垫移动时，前表面的区域通过润滑平面化溶液中的润滑剂添加剂与抛光垫中的磨料颗粒分离。

7. 发明授权

US07083700B2 Methods and apparatuses for planarizing microelectronic substrate assemblies 失效
公开(公告)号：US07083700B2
公开(公告)日：2006-08-01
申请号：US09916164
申请日：2001-07-25
申请人： Gundu M. Sabde , Whonchee Lee
发明人： Gundu M. Sabde , Whonchee Lee
IPC分类号： C23F1/00
CPC分类号： B24B37/245 , B24B21/04 , B24B37/26 , B24D2203/00
摘要： Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attached to the body at the planarizing surface. The front face of a substrate assembly is pressed against the lubricating planarizing solution and at least a portion of the fixed abrasive particles on the planarizing surface of the polishing pad. At least one of the polishing pad or the substrate assembly is then moved with respect to the other to impart relative motion therebetween. As the substrate assembly moves relative to the polishing pad, regions of the front face are separated from the abrasive particles in the polishing pad by a lubricant-additive in the lubricating planarizing solution.

8. 发明授权

US06533893B2 Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids 失效
标题翻译：用选择的平面液体进行化学机械平面化的微电子基板的方法和装置
公开(公告)号：US06533893B2
公开(公告)日：2003-03-18
申请号：US10102401
申请日：2002-03-19
申请人： Gundu M. Sabde , James J. Hofmann , Michael J. Joslyn , Whonchee Lee
发明人： Gundu M. Sabde , James J. Hofmann , Michael J. Joslyn , Whonchee Lee
IPC分类号： H01L2100
CPC分类号： B24B37/0056 , B24B37/042
摘要： A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the method can include planarizing the microelectronic substrate with a fixed abrasive polishing pad while maintaining the pH of a planarizing liquid adjacent the polishing pad at an approximately constant level by buffering the planarizing liquid. The planarizing liquid can include ammonium hydroxide and ammonium acetate, ammonium citrate, or potassium hydrogen phthalate. In another embodiment, the planarizing liquid can have an initially high pH that has a reduced tendency to decrease during planarization. The planarizing liquid can also include agents, such as isopropyl alcohol, ammonium acetate or polyoxy ethylene ether that can increase the wetted surface area of the microelectronic substrate and/or reduce drag force imparted to the microelectronic substrate by the polishing
摘要翻译：一种用于平面化微电子衬底的方法和装置。在一个实施例中，该方法可以包括用固定的研磨抛光垫平面化微电子衬底，同时通过缓冲平坦化液体将邻近抛光垫的平坦化液体的pH保持在大致恒定的水平。平面化液体可以包括氢氧化铵和乙酸铵，柠檬酸铵或邻苯二甲酸氢钾。在另一个实施方案中，平面化液体可以具有初始高的pH，其在平坦化期间具有降低的降低趋势。平面化液体还可以包括可以增加微电子衬底的润湿表面积和/或通过抛光赋予微电子衬底的拖曳力的试剂，例如异丙醇，乙酸铵或聚氧乙烯醚

9. 发明授权

US08974655B2 Methods of planarization and electro-chemical mechanical polishing processes 有权
标题翻译：平面化和电化学机械抛光工艺的方法
公开(公告)号：US08974655B2
公开(公告)日：2015-03-10
申请号：US12054077
申请日：2008-03-24
申请人： Wayne Huang , Whonchee Lee
发明人： Wayne Huang , Whonchee Lee
IPC分类号： C25F3/16 , B23H5/08 , H01L21/321
CPC分类号： C25F3/16 , B23H5/08 , H01L21/32125
摘要： A method of removing a material from a surface includes providing a substrate comprising a material having a surface, contacting the surface with a polishing medium, applying a voltage to the substrate to remove material from the surface, and changing the voltage during the removing material from the surface. An electro-chemical mechanical polishing method includes providing a substrate having a surface, applying a platen to the surface, applying a first voltage to the substrate, rotating the platen and surface relative to each other at a first rotational speed, increasing to a second voltage, and decreasing to a second rotational speed.
摘要翻译：从表面去除材料的方法包括提供包括具有表面的材料的基板，使表面与抛光介质接触，向基板施加电压以从表面去除材料，以及将去除材料期间的电压从表面。一种电化学机械抛光方法，包括提供具有表面的基板，向表面施加压板，向基板施加第一电压，以第一转速相对于彼此旋转压板和表面，增加到第二电压，并减小到第二转速。

10. 发明授权

US08450214B2 Methods of etching single crystal silicon 有权
标题翻译：蚀刻单晶硅的方法
公开(公告)号：US08450214B2
公开(公告)日：2013-05-28
申请号：US13599791
申请日：2012-08-30
申请人： Whonchee Lee , Janos Fucsko , David H. Wells
发明人： Whonchee Lee , Janos Fucsko , David H. Wells
IPC分类号： H01L21/311
CPC分类号： H01L21/30608 , B81B2203/033 , B81B2203/0338 , B81C1/00626 , C30B29/06 , C30B33/10
摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.
摘要翻译：单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。当沿<100>方向图案化时，所得结构包括底切特征。

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