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1. 发明授权

US09324941B2 Semiconductor devices and methods for fabricating the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US09324941B2
公开(公告)日：2016-04-26
申请号：US14306976
申请日：2014-06-17
申请人： Whankyun Kim , Woojin Kim , Woo Chang Lim
发明人： Whankyun Kim , Woojin Kim , Woo Chang Lim
IPC分类号： H01L21/00 , H01L43/12 , C23C14/35 , H01L43/08 , C23C14/04 , H01J37/34 , H01L27/22
CPC分类号： H01L43/12 , C23C14/046 , C23C14/35 , H01J37/3408 , H01L27/228 , H01L43/08
摘要： A method of fabricating a semiconductor device includes providing a wafer in a chamber of a point-cusp magnetron physical vapor deposition (PCM-PVD) apparatus, the chamber including a metal target. The method further includes providing an inert gas and a reactive gas in the chamber and forming an amorphous conductive layer on the wafer by reacting the reactive gas with a metal atom separated from the metal target by the inert gas.
摘要翻译：制造半导体器件的方法包括在点尖磁控管物理气相沉积（PCM-PVD）设备的腔室中提供晶片，所述腔室包括金属靶。该方法还包括在室中提供惰性气体和反应性气体，并通过使惰性气体与金属靶分离的金属原子反应而在晶片上形成非晶形导电层。

2. 发明授权

US09276198B2 Magnetic memory devices 有权
标题翻译：磁存储器件
公开(公告)号：US09276198B2
公开(公告)日：2016-03-01
申请号：US13967340
申请日：2013-08-14
申请人： Woo Chang Lim , Sangyong Kim , Whankyun Kim , Sang Hwan Park , Jeongheon Park
发明人： Woo Chang Lim , Sangyong Kim , Whankyun Kim , Sang Hwan Park , Jeongheon Park
IPC分类号： H01L43/08 , G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659
摘要： A magnetic memory device according to embodiments includes a first reference magnetic layer on a substrate, a second reference magnetic layer on the first reference magnetic layer, a free layer between the first reference magnetic layer and the second reference magnetic layer, a first tunnel barrier layer between the first reference magnetic layer and the free layer, and a second tunnel barrier layer between the second reference magnetic layer and the free layer. The first reference magnetic, second reference magnetic and free layers each have a magnetization direction substantially perpendicular to a top surface of the substrate. A resistance-area product (RA) value of the first tunnel barrier layer is greater than that of the second tunnel barrier layer.
摘要翻译：根据实施例的磁存储器件包括衬底上的第一参考磁性层，第一参考磁性层上的第二参考磁性层，第一参考磁性层和第二参考磁性层之间的自由层，第一隧道势垒层在第一参考磁性层和自由层之间，以及在第二参考磁性层和自由层之间的第二隧道势垒层。第一参考磁性，第二参考磁性和自由层各自具有基本上垂直于衬底顶表面的磁化方向。第一隧道势垒层的电阻面积乘积（RA）值大于第二隧道势垒层的电阻面积积（RA）值。

3. 发明授权

US08445979B2 Magnetic memory devices including magnetic layers separated by tunnel barriers 有权
公开(公告)号：US08445979B2
公开(公告)日：2013-05-21
申请号：US12862074
申请日：2010-08-24
申请人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
发明人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.

4. 发明申请

US20140191346A1 MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS 审中-公开
标题翻译：包括由隧道障碍物分离的磁层的磁记忆装置
公开(公告)号：US20140191346A1
公开(公告)日：2014-07-10
申请号：US14206053
申请日：2014-03-12
申请人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
发明人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.
摘要翻译：磁存储器件可以包括第一垂直磁性层，第一垂直磁性层上的非磁性层和非磁性层上的第一结磁性层，其中非磁性层位于第一垂直磁性层之间和第一结磁性层。隧道势垒可以在第一结磁性层上，其中第一结磁性层位于非磁性层和隧道势垒之间。第二结磁性层可以在隧道势垒上，其中隧道势垒在第一和第二结磁层之间，第二垂直磁性层可以在第二结磁性层上，第二结磁性层位于隧道势垒之间和第二垂直磁性层。

5. 发明授权

US08476722B2 Magnetic memory device 有权
公开(公告)号：US08476722B2
公开(公告)日：2013-07-02
申请号：US13091215
申请日：2011-04-21
申请人： Jangeum Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
发明人： Jangeum Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
摘要： A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

6. 发明申请

US20110303996A1 MAGNETIC MEMORY DEVICES 有权
标题翻译：磁记忆装置
公开(公告)号：US20110303996A1
公开(公告)日：2011-12-15
申请号：US13159236
申请日：2011-06-13
申请人： Woojin Kim , Sechung Oh , Jangeun Lee , Jeahyoung Lee , Junho Jeong , Woo Chang Lim
发明人： Woojin Kim , Sechung Oh , Jangeun Lee , Jeahyoung Lee , Junho Jeong , Woo Chang Lim
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/10
摘要： A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free layer. The magnetization reversal auxiliary layer has a fixed magnetization direction that is substantially perpendicular to a plane along an interface between the tunnel barrier layer and the reference layer. The magnetization reversal auxiliary layer may be directly on the free layer, or an exchange coupling control layer may be provided between the magnetization reversal auxiliary layer and the free layer.
摘要翻译：一种磁存储器件包括具有固定的磁化方向的参考磁性层，参考磁性层上的隧道势垒层，在与参考磁性层相对的隧道势垒层上具有可变的磁化方向的自由层和磁化反转辅助层在自由层上。磁化反转辅助层具有固定的磁化方向，其基本上垂直于沿着隧道势垒层和参考层之间的界面的平面。磁化反转辅助层可以直接在自由层上，或者可以在磁化反转辅助层和自由层之间提供交换耦合控制层。

7. 发明申请

US20110260272A1 Magnetic Memory Device 有权
标题翻译：磁存储器件
公开(公告)号：US20110260272A1
公开(公告)日：2011-10-27
申请号：US13091215
申请日：2011-04-21
申请人： Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
发明人： Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
摘要： A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
摘要翻译：提供磁存储器件。所述磁存储器件包括：衬底上的第一垂直磁性层和第二垂直磁性层，所述第一垂直磁性层和所述第二垂直磁性层之间的隧道势垒层，以及位于所述第一垂直磁性层之间的交换耦合层，第一垂直磁性层和第一垂直磁性层的第二子层。

8. 发明授权

US08947914B2 Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same 有权
标题翻译：磁隧道结装置，存储器，电子系统和存储系统及其制造方法
公开(公告)号：US08947914B2
公开(公告)日：2015-02-03
申请号：US13398617
申请日：2012-02-16
申请人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Woojin Kim , Sang Hwan Park , Jang Eun Lee
发明人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Woojin Kim , Sang Hwan Park , Jang Eun Lee
IPC分类号： G11C11/00 , G11C11/16 , H01L43/08 , H01L43/10 , H01L43/12 , H01L27/22
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12 , Y10S977/933 , Y10S977/935
摘要： Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.
摘要翻译：提供一种包括固定磁性结构的磁性隧道接合装置; 自由磁结构; 以及在所述固定磁性结构和所述自由磁性结构之间的隧道势垒，所述固定磁性结构和所述自由磁性结构中的至少一个包括垂直磁化保持层，所述垂直磁化保留层与所述隧道势垒之间的磁性层，以及在垂直磁化保持层和磁性层之间的垂直磁化诱导层。

9. 发明申请

US20130234269A1 MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS 审中-公开
标题翻译：包括由隧道障碍物分离的磁层的磁记忆装置
公开(公告)号：US20130234269A1
公开(公告)日：2013-09-12
申请号：US13838598
申请日：2013-03-15
申请人： Sechung OH , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
发明人： Sechung OH , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.
摘要翻译：磁存储器件可以包括第一垂直磁性层，第一垂直磁性层上的非磁性层和非磁性层上的第一结磁性层，其中非磁性层位于第一垂直磁性层之间和第一结磁性层。隧道势垒可以在第一结磁性层上，其中第一结磁性层位于非磁性层和隧道势垒之间。第二结磁性层可以在隧道势垒上，其中隧道势垒在第一和第二结磁层之间，第二垂直磁性层可以在第二结磁性层上，第二结磁性层位于隧道势垒之间和第二垂直磁性层。

10. 发明授权

US08445981B2 Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming a perpendicular magnetic film of the same 有权
标题翻译：磁存储器件，电子系统和包括其的存储卡，其制造方法和形成其相同的垂直磁性膜的方法
公开(公告)号：US08445981B2
公开(公告)日：2013-05-21
申请号：US13177115
申请日：2011-07-06
申请人： Woo Chang Lim , Jangeun Lee , SeChung Oh , Woojin Kim
发明人： Woo Chang Lim , Jangeun Lee , SeChung Oh , Woojin Kim
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/08 , G11C11/161
摘要： Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming perpendicular magnetic films are provided. The magnetic memory device may include a seed pattern on a substrate having a first crystal structure, a perpendicular magnetic pattern on the seed pattern having a second crystal structure, and an interlayer pattern between the seed pattern and the perpendicular magnetic pattern. The interlayer pattern may reduce a stress caused by a difference between horizontal lattice constants of the first and the second crystal structures.
摘要翻译：提供了磁存储器件，电子系统和包括其的存储卡，其制造方法以及形成垂直磁膜的方法。磁存储器件可以包括在具有第一晶体结构的衬底上的种子图案，具有第二晶体结构的种子图案上的垂直磁图案，以及种子图案和垂直磁图案之间的层间图案。层间图案可以减小由第一和第二晶体结构的水平晶格常数之间的差引起的应力。

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