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    • 3. 发明申请
    • Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method
    • 通过该方法制造金属 - 绝缘体 - 金属电容器和金属 - 绝缘体 - 金属电容器的方法
    • US20060163640A1
    • 2006-07-27
    • US11339151
    • 2006-01-25
    • Jung-min ParkSeok-jun WonMin-woo SongYong-kuk JeongDae-jin KwonWeon-hong Kim
    • Jung-min ParkSeok-jun WonMin-woo SongYong-kuk JeongDae-jin KwonWeon-hong Kim
    • H01L29/94
    • H01L28/60H01L23/5223H01L2924/0002H01L2924/00
    • In a method of fabricating a metal-insulator-metal (MIM) capacitor and a metal-insulator-metal (MIM) capacitor fabricated according to the method, the method comprises: forming an insulating-layer pattern on a semiconductor substrate, the insulating-layer pattern having a plurality of openings that respectively define areas where capacitor cells are to be formed; forming a lower electrode conductive layer on the insulating-layer pattern and on the semiconductor substrate; forming a first sacrificial layer that fills the openings on the lower electrode conductive layer; forming a second sacrificial layer on of the first sacrificial layer; planarizing the second sacrificial layer; exposing an upper surface of the lower electrode conductive layer; removing the exposed lower electrode conductive layer to form a plurality of lower electrodes that are separated from each other, each corresponding to a capacitor cell; and forming dielectric layers and upper electrodes, that are separated from each other, each corresponding to a capacitor cell, on each of the lower electrodes to provide a plurality of MIM capacitor cells constituting one capacitor to which the same electric signal is applied.
    • 在制造根据该方法制造的金属 - 绝缘体 - 金属(MIM)电容器和金属 - 绝缘体 - 金属(MIM))电容器的方法中,所述方法包括:在半导体衬底上形成绝缘层图案, 层图案具有分别限定要形成电容器单元的区域的多个开口; 在绝缘层图案和半导体衬底上形成下电极导电层; 形成填充所述下电极导电层上的开口的第一牺牲层; 在所述第一牺牲层上形成第二牺牲层; 平面化第二牺牲层; 暴露下电极导电层的上表面; 去除暴露的下电极导电层以形成彼此分离的多个下电极,每个相应于电容器单元; 并且在每个下电极上形成各自对应于电容器单元的电介质层和上电极,以提供构成相同电信号的一个电容器的多个MIM电容器单元。
    • 4. 发明授权
    • Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method
    • 通过该方法制造金属 - 绝缘体 - 金属电容器和金属 - 绝缘体 - 金属电容器的方法
    • US07732296B2
    • 2010-06-08
    • US11339151
    • 2006-01-25
    • Jung-min ParkSeok-jun WonMin-woo SongYong-kuk JeongDae-jin KwonWeon-hong Kim
    • Jung-min ParkSeok-jun WonMin-woo SongYong-kuk JeongDae-jin KwonWeon-hong Kim
    • H01L21/20
    • H01L28/60H01L23/5223H01L2924/0002H01L2924/00
    • In a method of fabricating a metal-insulator-metal (MIM) capacitor and a metal-insulator-metal (MIM) capacitor fabricated according to the method, the method comprises: forming an insulating-layer pattern on a semiconductor substrate, the insulating-layer pattern having a plurality of openings that respectively define areas where capacitor cells are to be formed; forming a lower electrode conductive layer on the insulating-layer pattern and on the semiconductor substrate; forming a first sacrificial layer that fills the openings on the lower electrode conductive layer; forming a second sacrificial layer on of the first sacrificial layer; planarizing the second sacrificial layer; exposing an upper surface of the lower electrode conductive layer; removing the exposed lower electrode conductive layer to form a plurality of lower electrodes that are separated from each other, each corresponding to a capacitor cell; and forming dielectric layers and upper electrodes, that are separated from each other, each corresponding to a capacitor cell, on each of the lower electrodes to provide a plurality of MIM capacitor cells constituting one capacitor to which the same electric signal is applied.
    • 在制造根据该方法制造的金属 - 绝缘体 - 金属(MIM)电容器和金属 - 绝缘体 - 金属(MIM))电容器的方法中,所述方法包括:在半导体衬底上形成绝缘层图案, 层图案具有分别限定要形成电容器单元的区域的多个开口; 在绝缘层图案和半导体衬底上形成下电极导电层; 形成填充所述下电极导电层上的开口的第一牺牲层; 在所述第一牺牲层上形成第二牺牲层; 平面化第二牺牲层; 暴露下电极导电层的上表面; 去除暴露的下电极导电层以形成彼此分离的多个下电极,每个相应于电容器单元; 并且在每个下电极上形成各自对应于电容器单元的电介质层和上电极,以提供构成相同电信号的一个电容器的多个MIM电容器单元。