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1. 发明申请

US20090233434A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090233434A1
公开(公告)日：2009-09-17
申请号：US12401305
申请日：2009-03-10
申请人： Weon-Hong KIM , Min-woo Song , Pan-Kwi Park , Jung-Min Park
发明人： Weon-Hong KIM , Min-woo Song , Pan-Kwi Park , Jung-Min Park
IPC分类号： H01L21/4763 , H01L21/469
CPC分类号： C23C16/308 , C23C16/30 , C23C16/405 , C23C16/45529 , C23C16/45531 , C23C16/45542 , H01L21/3141 , H01L21/3145 , H01L21/31641 , H01L28/55
摘要： In semiconductor devices and methods of manufacturing semiconductor devices, a zirconium source having zirconium, carbon and nitrogen is provided onto a substrate to form an adsorption layer of the zirconium source on the substrate. A first purging process is performed to remove a non-adsorbed portion of the zirconium source. An oxidizing gas is provided onto the adsorption layer to form an oxidized adsorption layer of the zirconium source on the substrate. A second purging process is performed to remove a non-reacted portion of the oxidizing gas. A nitriding gas is provided on the oxidized adsorption layer to form a zirconium carbo-oxynitride layer on the substrate, and a third purging process is provided to remove a non-reacted portion of the nitriding gas.
摘要翻译：在制造半导体器件的半导体器件和方法中，将具有锆，碳和氮的锆源提供到衬底上以在衬底上形成锆源的吸附层。进行第一吹扫处理以除去锆源的未吸附部分。在吸附层上提供氧化气体，以在衬底上形成锆源的氧化吸附层。执行第二吹扫处理以除去氧化气体的未反应部分。在氧化吸附层上设置氮化气体，在基板上形成锆碳氮化锆层，并且提供第三吹扫工艺以去除氮化气体的未反应部分。

2. 发明申请

US20060158829A1 Multi-layered dielectric film of microelectronic device and method of manufacturing the same 有权
公开(公告)号：US20060158829A1
公开(公告)日：2006-07-20
申请号：US11335411
申请日：2006-01-19
申请人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
发明人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
IPC分类号： H01G4/20
CPC分类号： H01G4/10 , H01G4/20
摘要： Multi-layered dielectric films which can improve the performance characteristics of a microelectronic device are provided as well as methods of manufacturing the same. The multi-layered dielectric film includes a single component oxide layer made of a single component oxide, and composite components oxide layers made of a composite components oxide including two or more different components formed along either side of the single component oxide layer without a layered structure.

3. 发明申请

US20060163640A1 Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method 有权
标题翻译：通过该方法制造金属 - 绝缘体 - 金属电容器和金属 - 绝缘体 - 金属电容器的方法
公开(公告)号：US20060163640A1
公开(公告)日：2006-07-27
申请号：US11339151
申请日：2006-01-25
申请人： Jung-min Park , Seok-jun Won , Min-woo Song , Yong-kuk Jeong , Dae-jin Kwon , Weon-hong Kim
发明人： Jung-min Park , Seok-jun Won , Min-woo Song , Yong-kuk Jeong , Dae-jin Kwon , Weon-hong Kim
IPC分类号： H01L29/94
CPC分类号： H01L28/60 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： In a method of fabricating a metal-insulator-metal (MIM) capacitor and a metal-insulator-metal (MIM) capacitor fabricated according to the method, the method comprises: forming an insulating-layer pattern on a semiconductor substrate, the insulating-layer pattern having a plurality of openings that respectively define areas where capacitor cells are to be formed; forming a lower electrode conductive layer on the insulating-layer pattern and on the semiconductor substrate; forming a first sacrificial layer that fills the openings on the lower electrode conductive layer; forming a second sacrificial layer on of the first sacrificial layer; planarizing the second sacrificial layer; exposing an upper surface of the lower electrode conductive layer; removing the exposed lower electrode conductive layer to form a plurality of lower electrodes that are separated from each other, each corresponding to a capacitor cell; and forming dielectric layers and upper electrodes, that are separated from each other, each corresponding to a capacitor cell, on each of the lower electrodes to provide a plurality of MIM capacitor cells constituting one capacitor to which the same electric signal is applied.
摘要翻译：在制造根据该方法制造的金属 - 绝缘体 - 金属（MIM）电容器和金属 - 绝缘体 - 金属（MIM））电容器的方法中，所述方法包括：在半导体衬底上形成绝缘层图案，层图案具有分别限定要形成电容器单元的区域的多个开口; 在绝缘层图案和半导体衬底上形成下电极导电层; 形成填充所述下电极导电层上的开口的第一牺牲层; 在所述第一牺牲层上形成第二牺牲层; 平面化第二牺牲层; 暴露下电极导电层的上表面; 去除暴露的下电极导电层以形成彼此分离的多个下电极，每个相应于电容器单元; 并且在每个下电极上形成各自对应于电容器单元的电介质层和上电极，以提供构成相同电信号的一个电容器的多个MIM电容器单元。

4. 发明授权

US07732296B2 Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method 有权
标题翻译：通过该方法制造金属 - 绝缘体 - 金属电容器和金属 - 绝缘体 - 金属电容器的方法
公开(公告)号：US07732296B2
公开(公告)日：2010-06-08
申请号：US11339151
申请日：2006-01-25
申请人： Jung-min Park , Seok-jun Won , Min-woo Song , Yong-kuk Jeong , Dae-jin Kwon , Weon-hong Kim
发明人： Jung-min Park , Seok-jun Won , Min-woo Song , Yong-kuk Jeong , Dae-jin Kwon , Weon-hong Kim
IPC分类号： H01L21/20
CPC分类号： H01L28/60 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： In a method of fabricating a metal-insulator-metal (MIM) capacitor and a metal-insulator-metal (MIM) capacitor fabricated according to the method, the method comprises: forming an insulating-layer pattern on a semiconductor substrate, the insulating-layer pattern having a plurality of openings that respectively define areas where capacitor cells are to be formed; forming a lower electrode conductive layer on the insulating-layer pattern and on the semiconductor substrate; forming a first sacrificial layer that fills the openings on the lower electrode conductive layer; forming a second sacrificial layer on of the first sacrificial layer; planarizing the second sacrificial layer; exposing an upper surface of the lower electrode conductive layer; removing the exposed lower electrode conductive layer to form a plurality of lower electrodes that are separated from each other, each corresponding to a capacitor cell; and forming dielectric layers and upper electrodes, that are separated from each other, each corresponding to a capacitor cell, on each of the lower electrodes to provide a plurality of MIM capacitor cells constituting one capacitor to which the same electric signal is applied.
摘要翻译：在制造根据该方法制造的金属 - 绝缘体 - 金属（MIM）电容器和金属 - 绝缘体 - 金属（MIM））电容器的方法中，所述方法包括：在半导体衬底上形成绝缘层图案，层图案具有分别限定要形成电容器单元的区域的多个开口; 在绝缘层图案和半导体衬底上形成下电极导电层; 形成填充所述下电极导电层上的开口的第一牺牲层; 在所述第一牺牲层上形成第二牺牲层; 平面化第二牺牲层; 暴露下电极导电层的上表面; 去除暴露的下电极导电层以形成彼此分离的多个下电极，每个相应于电容器单元; 并且在每个下电极上形成各自对应于电容器单元的电介质层和上电极，以提供构成相同电信号的一个电容器的多个MIM电容器单元。

5. 发明授权

US07508649B2 Multi-layered dielectric film of microelectronic device and method of manufacturing the same 有权
标题翻译：微电子器件的多层电介质膜及其制造方法
公开(公告)号：US07508649B2
公开(公告)日：2009-03-24
申请号：US11335411
申请日：2006-01-19
申请人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
发明人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
IPC分类号： H01G4/06 , H01G4/20
CPC分类号： H01G4/10 , H01G4/20
摘要： Multi-layered dielectric films which can improve the performance characteristics of a microelectronic device are provided as well as methods of manufacturing the same. The multi-layered dielectric film includes a single component oxide layer made of a single component oxide, and composite components oxide layers made of a composite components oxide including two or more different components formed along either side of the single component oxide layer without a layered structure.
摘要翻译：提供了能够提高微电子器件的性能特性的多层电介质膜及其制造方法。所述多层电介质膜包括由单一成分氧化物构成的单一成分氧化物层，以及复合成分氧化物层，所述复合成分由包含沿所述单一成分氧化物层的任一侧形成的两种以上不同成分的复合成分氧化物构成，。

6. 发明申请

US20080081409A1 Method of Manufacturing Memory Device 审中-公开
标题翻译：制造存储器件的方法
公开(公告)号：US20080081409A1
公开(公告)日：2008-04-03
申请号：US11858674
申请日：2007-09-20
申请人： Min-woo Song , Seok-jun Won , Weon-hong Kim , Ju-youn Kim , Jung-min Park
发明人： Min-woo Song , Seok-jun Won , Weon-hong Kim , Ju-youn Kim , Jung-min Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/90 , H01L27/10817 , H01L27/10852
摘要： A method of manufacturing a memory device that improves electrical characteristics of an MIM capacitor using a zirconium oxide film (ZrO2) as a dielectric film includes: forming a lower metal electrode on a semiconductor substrate; forming a two or more-layered dielectric film including zirconium oxide films on the lower metal electrode; forming an upper metal electrode on the dielectric film; forming an MIM capacitor by patterning the upper metal electrode, the dielectric film, and the lower metal electrode; forming an interlayer insulating film covering the MIM capacitor; forming contacts in the insulating film; and performing heat treatment at a temperature range of 425 to 500° C.
摘要翻译：制造使用氧化锆膜（ZrO 2/2）作为电介质膜的MIM电容器的电气特性的存储器件的制造方法包括：在半导体衬底上形成下部金属电极; 在下金属电极上形成包含氧化锆膜的两层或多层电介质膜; 在所述电介质膜上形成上金属电极; 通过图案化上金属电极，电介质膜和下金属电极形成MIM电容器; 形成覆盖所述MIM电容器的层间绝缘膜; 在绝缘膜中形成接触; 并在425〜500℃的温度范围进行热处理。

7. 发明申请

US20080026596A1 Method of forming metallic oxide films using atomic layer deposition 有权
标题翻译：使用原子层沉积形成金属氧化物膜的方法
公开(公告)号：US20080026596A1
公开(公告)日：2008-01-31
申请号：US11812882
申请日：2007-06-22
申请人： Ju-youn Kim , Seok-jun Won , Weon-hong Kim , Min-woo Song , Jung-min Park
发明人： Ju-youn Kim , Seok-jun Won , Weon-hong Kim , Min-woo Song , Jung-min Park
IPC分类号： H01L21/02
CPC分类号： H01L21/3162 , C23C16/45531 , C23C16/4554 , C23C16/515 , C23C16/52 , H01L21/02178 , H01L21/02181 , H01L21/02205 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： Example embodiments are directed to methods of forming a metallic oxide film using Atomic Layer Deposition while controlling the power reflected by a reactor. The method may include feeding metallic source gases, for example, first and second metallic source gases, and/or a reactant gas including oxygen into the reactor individually. One of the metallic source gases may include an amino-group or an alkoxy-group and another metallic source gas may include neither an amino-group nor an alkoxy-group. A plasma may be produced in the reactor from the reactant gas.
摘要翻译：示例性实施例涉及在控制反应堆反射的功率的同时使用原子层沉积形成金属氧化物膜的方法。该方法可以包括将金属源气体，例如第一和第二金属源气体和/或包含氧气的反应物气体单独地供入反应器。金属源气体之一可以包括氨基或烷氧基，而另一种金属源气体既不包括氨基也不包括烷氧基。可以在反应器中从反应气体中产生等离子体。

8. 发明授权

US07807584B2 Method of forming metallic oxide films using atomic layer deposition 有权
标题翻译：使用原子层沉积形成金属氧化物膜的方法
公开(公告)号：US07807584B2
公开(公告)日：2010-10-05
申请号：US11812882
申请日：2007-06-22
申请人： Ju-youn Kim , Seok-jun Won , Weon-hong Kim , Min-woo Song , Jung-min Park
发明人： Ju-youn Kim , Seok-jun Won , Weon-hong Kim , Min-woo Song , Jung-min Park
IPC分类号： H01L21/461
CPC分类号： H01L21/3162 , C23C16/45531 , C23C16/4554 , C23C16/515 , C23C16/52 , H01L21/02178 , H01L21/02181 , H01L21/02205 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： Example embodiments are directed to methods of forming a metallic oxide film using Atomic Layer Deposition while controlling the power reflected by a reactor. The method may include feeding metallic source gases, for example, first and second metallic source gases, and/or a reactant gas including oxygen into the reactor individually. One of the metallic source gases may include an amino-group or an alkoxy-group and another metallic source gas may include neither an amino-group nor an alkoxy-group. A plasma may be produced in the reactor from the reactant gas.
摘要翻译：示例性实施例涉及在控制反应堆反射的功率的同时使用原子层沉积形成金属氧化物膜的方法。该方法可以包括将金属源气体，例如第一和第二金属源气体和/或包含氧气的反应物气体单独地供入反应器。金属源气体之一可以包括氨基或烷氧基，而另一种金属源气体既不包括氨基也不包括烷氧基。可以在反应器中从反应气体中产生等离子体。

9. 发明申请

US20080056975A1 Method of Forming Metal Oxide and Apparatus for Performing the Same 有权
标题翻译：形成金属氧化物的方法及其执行装置
公开(公告)号：US20080056975A1
公开(公告)日：2008-03-06
申请号：US11775111
申请日：2007-07-09
申请人： Seok-Jun Won , Yong-Min Yoo , Min-woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-mi Song
发明人： Seok-Jun Won , Yong-Min Yoo , Min-woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-mi Song
IPC分类号： C01B13/14 , C25B1/00
CPC分类号： C01G25/02 , C01G23/047 , C01G27/02 , C01G35/00 , C01P2006/40
摘要： In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide.
摘要翻译：在基板上形成金属氧化物的方法和装置中，包括金属前体的源气体沿着基板的表面流动，以在基板上形成金属前体层。包括臭氧的氧化气体沿着金属前体层的表面流动，以氧化金属前体层，从而在基板上形成金属氧化物。对沿着金属前体层的表面流动的氧化气体施加射频功率，以加速金属前体层与氧化气体的反应。氧化反应的加速可以改善金属氧化物的电特性和均匀性。

10. 发明授权

US07407897B2 Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same 有权
标题翻译：具有多层电介质膜的模拟半导体器件的电容器及其制造方法
公开(公告)号：US07407897B2
公开(公告)日：2008-08-05
申请号：US11173624
申请日：2005-07-01
申请人： Seok-jun Won , Yong-kuk Jeong , Dae-jin Kwon , Min-woo Song , Weon-hong Kim
发明人： Seok-jun Won , Yong-kuk Jeong , Dae-jin Kwon , Min-woo Song , Weon-hong Kim
IPC分类号： H01L29/00
CPC分类号： H01L28/40 , H01L28/65 , Y10S438/957
摘要： In a capacitor of an analog semiconductor device having a multi-layer dielectric film and a method of manufacturing the same, the multi-layer dielectric film can be readily manufactured, has weak reactivity with corresponding electrodes and offers excellent leakage current characteristics. In order to obtain these advantages, a lower dielectric film having a negative quadratic VCC, an intermediate dielectric film having a positive quadratic VCC, and an upper dielectric film having a negative quadratic VCC are sequentially formed between a lower electrode and an upper electrode. The lower dielectric film and the upper dielectric film may be composed of SiO2. The intermediate dielectric film may be composed of HFO2.
摘要翻译：在具有多层电介质膜的模拟半导体器件的电容器及其制造方法中，可以容易地制造多层电介质膜，与相应的电极具有弱反应性并提供优异的漏电流特性。为了获得这些优点，在下电极和上电极之间顺序地形成具有负二次VCC的下电介质膜，具有正二次VCC的中间电介质膜和具有负二次VCC的上电介质膜。下电介质膜和上电介质膜可以由SiO 2组成。中间电介质膜可以由HFO 2 N 2构成。

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