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1. 发明授权

US07407897B2 Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same 有权
标题翻译：具有多层电介质膜的模拟半导体器件的电容器及其制造方法
公开(公告)号：US07407897B2
公开(公告)日：2008-08-05
申请号：US11173624
申请日：2005-07-01
申请人： Seok-jun Won , Yong-kuk Jeong , Dae-jin Kwon , Min-woo Song , Weon-hong Kim
发明人： Seok-jun Won , Yong-kuk Jeong , Dae-jin Kwon , Min-woo Song , Weon-hong Kim
IPC分类号： H01L29/00
CPC分类号： H01L28/40 , H01L28/65 , Y10S438/957
摘要： In a capacitor of an analog semiconductor device having a multi-layer dielectric film and a method of manufacturing the same, the multi-layer dielectric film can be readily manufactured, has weak reactivity with corresponding electrodes and offers excellent leakage current characteristics. In order to obtain these advantages, a lower dielectric film having a negative quadratic VCC, an intermediate dielectric film having a positive quadratic VCC, and an upper dielectric film having a negative quadratic VCC are sequentially formed between a lower electrode and an upper electrode. The lower dielectric film and the upper dielectric film may be composed of SiO2. The intermediate dielectric film may be composed of HFO2.
摘要翻译：在具有多层电介质膜的模拟半导体器件的电容器及其制造方法中，可以容易地制造多层电介质膜，与相应的电极具有弱反应性并提供优异的漏电流特性。为了获得这些优点，在下电极和上电极之间顺序地形成具有负二次VCC的下电介质膜，具有正二次VCC的中间电介质膜和具有负二次VCC的上电介质膜。下电介质膜和上电介质膜可以由SiO 2组成。中间电介质膜可以由HFO 2 N 2构成。

2. 发明申请

US20060017136A1 Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same 有权
标题翻译：具有多层电介质膜的模拟半导体器件的电容器及其制造方法
公开(公告)号：US20060017136A1
公开(公告)日：2006-01-26
申请号：US11173624
申请日：2005-07-01
申请人： Seok-jun Won , Yong-kuk Jeong , Dae-jin Kwon , Min-woo Song , Weon-hong Kim
发明人： Seok-jun Won , Yong-kuk Jeong , Dae-jin Kwon , Min-woo Song , Weon-hong Kim
IPC分类号： H01L29/00
CPC分类号： H01L28/40 , H01L28/65 , Y10S438/957
摘要： In a capacitor of an analog semiconductor device having a multi-layer dielectric film and a method of manufacturing the same, the multi-layer dielectric film can be readily manufactured, has weak reactivity with corresponding electrodes and offers excellent leakage current characteristics. In order to obtain these advantages, a lower dielectric film having a negative quadratic VCC, an intermediate dielectric film having a positive quadratic VCC, and an upper dielectric film having a negative quadratic VCC are sequentially formed between a lower electrode and an upper electrode. The lower dielectric film and the upper dielectric film may be composed of SiO2. The intermediate dielectric film may be composed of HFO2.
摘要翻译：在具有多层电介质膜的模拟半导体器件的电容器及其制造方法中，可以容易地制造多层电介质膜，与相应的电极具有弱反应性并提供优异的漏电流特性。为了获得这些优点，在下电极和上电极之间顺序地形成具有负二次VCC的下电介质膜，具有正二次VCC的中间电介质膜和具有负二次VCC的上电介质膜。下电介质膜和上电介质膜可以由SiO 2组成。中间电介质膜可以由HFO 2 N 2构成。

3. 发明申请

US20060163640A1 Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method 有权
标题翻译：通过该方法制造金属 - 绝缘体 - 金属电容器和金属 - 绝缘体 - 金属电容器的方法
公开(公告)号：US20060163640A1
公开(公告)日：2006-07-27
申请号：US11339151
申请日：2006-01-25
申请人： Jung-min Park , Seok-jun Won , Min-woo Song , Yong-kuk Jeong , Dae-jin Kwon , Weon-hong Kim
发明人： Jung-min Park , Seok-jun Won , Min-woo Song , Yong-kuk Jeong , Dae-jin Kwon , Weon-hong Kim
IPC分类号： H01L29/94
CPC分类号： H01L28/60 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： In a method of fabricating a metal-insulator-metal (MIM) capacitor and a metal-insulator-metal (MIM) capacitor fabricated according to the method, the method comprises: forming an insulating-layer pattern on a semiconductor substrate, the insulating-layer pattern having a plurality of openings that respectively define areas where capacitor cells are to be formed; forming a lower electrode conductive layer on the insulating-layer pattern and on the semiconductor substrate; forming a first sacrificial layer that fills the openings on the lower electrode conductive layer; forming a second sacrificial layer on of the first sacrificial layer; planarizing the second sacrificial layer; exposing an upper surface of the lower electrode conductive layer; removing the exposed lower electrode conductive layer to form a plurality of lower electrodes that are separated from each other, each corresponding to a capacitor cell; and forming dielectric layers and upper electrodes, that are separated from each other, each corresponding to a capacitor cell, on each of the lower electrodes to provide a plurality of MIM capacitor cells constituting one capacitor to which the same electric signal is applied.
摘要翻译：在制造根据该方法制造的金属 - 绝缘体 - 金属（MIM）电容器和金属 - 绝缘体 - 金属（MIM））电容器的方法中，所述方法包括：在半导体衬底上形成绝缘层图案，层图案具有分别限定要形成电容器单元的区域的多个开口; 在绝缘层图案和半导体衬底上形成下电极导电层; 形成填充所述下电极导电层上的开口的第一牺牲层; 在所述第一牺牲层上形成第二牺牲层; 平面化第二牺牲层; 暴露下电极导电层的上表面; 去除暴露的下电极导电层以形成彼此分离的多个下电极，每个相应于电容器单元; 并且在每个下电极上形成各自对应于电容器单元的电介质层和上电极，以提供构成相同电信号的一个电容器的多个MIM电容器单元。

4. 发明申请

US20060022245A1 Analog capacitor and method of manufacturing the same 有权
标题翻译：模拟电容及其制造方法
公开(公告)号：US20060022245A1
公开(公告)日：2006-02-02
申请号：US11187489
申请日：2005-07-22
申请人： Yong-kuk Jeong , Seok-jun Won , Dae-jin Kwon , Min-woo Song , Weon-hong Kim
发明人： Yong-kuk Jeong , Seok-jun Won , Dae-jin Kwon , Min-woo Song , Weon-hong Kim
IPC分类号： H01L29/94
CPC分类号： H01L21/022 , H01L21/02172 , H01L21/02274 , H01L21/0228 , H01L21/3143 , H01L21/31604 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L27/0805 , H01L28/56
摘要： An analog capacitor capable of reducing the influence of an applied voltage on a capacitance and a method of manufacturing the analog capacitor are provided. The analog capacitor includes a lower electrode which is formed on a substrate, a multi-layered dielectric layer which includes at least one oxide layer and at least one oxynitride layer which are formed of a material selected from the group consisting of Hf, Al, Zr, La, Ba, Sr, Ti, Pb, Bi and a combination thereof and is formed on the lower electrode, and an upper electrode which is formed on the multi-layered dielectric layer.
摘要翻译：提供了能够减小施加电压对电容的影响的模拟电容器和制造模拟电容器的方法。模拟电容器包括形成在基板上的下电极，包括至少一个氧化物层和至少一个氧氮化物层的多层电介质层，所述至少一个氧氮化物层由选自Hf，Al，Zr La，Ba，Sr，Ti，Pb，Bi及其组合形成在下电极上，形成在多层电介质层上的上电极。

5. 发明申请

US20060158829A1 Multi-layered dielectric film of microelectronic device and method of manufacturing the same 有权
公开(公告)号：US20060158829A1
公开(公告)日：2006-07-20
申请号：US11335411
申请日：2006-01-19
申请人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
发明人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
IPC分类号： H01G4/20
CPC分类号： H01G4/10 , H01G4/20
摘要： Multi-layered dielectric films which can improve the performance characteristics of a microelectronic device are provided as well as methods of manufacturing the same. The multi-layered dielectric film includes a single component oxide layer made of a single component oxide, and composite components oxide layers made of a composite components oxide including two or more different components formed along either side of the single component oxide layer without a layered structure.

6. 发明授权

US07732296B2 Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method 有权
标题翻译：通过该方法制造金属 - 绝缘体 - 金属电容器和金属 - 绝缘体 - 金属电容器的方法
公开(公告)号：US07732296B2
公开(公告)日：2010-06-08
申请号：US11339151
申请日：2006-01-25
申请人： Jung-min Park , Seok-jun Won , Min-woo Song , Yong-kuk Jeong , Dae-jin Kwon , Weon-hong Kim
发明人： Jung-min Park , Seok-jun Won , Min-woo Song , Yong-kuk Jeong , Dae-jin Kwon , Weon-hong Kim
IPC分类号： H01L21/20
CPC分类号： H01L28/60 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： In a method of fabricating a metal-insulator-metal (MIM) capacitor and a metal-insulator-metal (MIM) capacitor fabricated according to the method, the method comprises: forming an insulating-layer pattern on a semiconductor substrate, the insulating-layer pattern having a plurality of openings that respectively define areas where capacitor cells are to be formed; forming a lower electrode conductive layer on the insulating-layer pattern and on the semiconductor substrate; forming a first sacrificial layer that fills the openings on the lower electrode conductive layer; forming a second sacrificial layer on of the first sacrificial layer; planarizing the second sacrificial layer; exposing an upper surface of the lower electrode conductive layer; removing the exposed lower electrode conductive layer to form a plurality of lower electrodes that are separated from each other, each corresponding to a capacitor cell; and forming dielectric layers and upper electrodes, that are separated from each other, each corresponding to a capacitor cell, on each of the lower electrodes to provide a plurality of MIM capacitor cells constituting one capacitor to which the same electric signal is applied.
摘要翻译：在制造根据该方法制造的金属 - 绝缘体 - 金属（MIM）电容器和金属 - 绝缘体 - 金属（MIM））电容器的方法中，所述方法包括：在半导体衬底上形成绝缘层图案，层图案具有分别限定要形成电容器单元的区域的多个开口; 在绝缘层图案和半导体衬底上形成下电极导电层; 形成填充所述下电极导电层上的开口的第一牺牲层; 在所述第一牺牲层上形成第二牺牲层; 平面化第二牺牲层; 暴露下电极导电层的上表面; 去除暴露的下电极导电层以形成彼此分离的多个下电极，每个相应于电容器单元; 并且在每个下电极上形成各自对应于电容器单元的电介质层和上电极，以提供构成相同电信号的一个电容器的多个MIM电容器单元。

7. 发明授权

US07679124B2 Analog capacitor and method of manufacturing the same 有权
标题翻译：模拟电容及其制造方法
公开(公告)号：US07679124B2
公开(公告)日：2010-03-16
申请号：US11187489
申请日：2005-07-22
申请人： Yong-kuk Jeong , Seok-jun Won , Dae-jin Kwon , Min-woo Song , Weon-hong Kim
发明人： Yong-kuk Jeong , Seok-jun Won , Dae-jin Kwon , Min-woo Song , Weon-hong Kim
IPC分类号： H01L27/108
CPC分类号： H01L21/022 , H01L21/02172 , H01L21/02274 , H01L21/0228 , H01L21/3143 , H01L21/31604 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L27/0805 , H01L28/56
摘要： An analog capacitor capable of reducing the influence of an applied voltage on a capacitance and a method of manufacturing the analog capacitor are provided. The analog capacitor includes a lower electrode which is formed on a substrate, a multi-layered dielectric layer which includes at least one oxide layer and at least one oxynitride layer which are formed of a material selected from the group consisting of Hf, Al, Zr, La, Ba, Sr, Ti, Pb, Bi and a combination thereof and is formed on the lower electrode, and an upper electrode which is formed on the multi-layered dielectric layer.
摘要翻译：提供了能够减小施加电压对电容的影响的模拟电容器和制造模拟电容器的方法。模拟电容器包括形成在基板上的下电极，包括至少一个氧化物层和至少一个氧氮化物层的多层电介质层，所述至少一个氧氮化物层由选自Hf，Al，Zr La，Ba，Sr，Ti，Pb，Bi及其组合形成在下电极上，形成在多层电介质层上的上电极。

8. 发明授权

US07508649B2 Multi-layered dielectric film of microelectronic device and method of manufacturing the same 有权
标题翻译：微电子器件的多层电介质膜及其制造方法
公开(公告)号：US07508649B2
公开(公告)日：2009-03-24
申请号：US11335411
申请日：2006-01-19
申请人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
发明人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
IPC分类号： H01G4/06 , H01G4/20
CPC分类号： H01G4/10 , H01G4/20
摘要： Multi-layered dielectric films which can improve the performance characteristics of a microelectronic device are provided as well as methods of manufacturing the same. The multi-layered dielectric film includes a single component oxide layer made of a single component oxide, and composite components oxide layers made of a composite components oxide including two or more different components formed along either side of the single component oxide layer without a layered structure.
摘要翻译：提供了能够提高微电子器件的性能特性的多层电介质膜及其制造方法。所述多层电介质膜包括由单一成分氧化物构成的单一成分氧化物层，以及复合成分氧化物层，所述复合成分由包含沿所述单一成分氧化物层的任一侧形成的两种以上不同成分的复合成分氧化物构成，。

9. 发明申请

US20060105521A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060105521A1
公开(公告)日：2006-05-18
申请号：US11273504
申请日：2005-11-14
申请人： Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong
发明人： Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong
IPC分类号： H01L21/8242 , H01L21/20
CPC分类号： H01L28/65 , H01L21/31111 , H01L28/55
摘要： Provided is a method of manufacturing a semiconductor device with enhancements of electrical characteristics. The method includes sequentially forming a lower electrode and an insulating layer on a semiconductor substrate, dry-etching a region of the insulating layer corresponding to a capacitor forming region so that the lower electrode is not exposed, forming an inter-insulating layer by wet-etching the insulating layer so that a region of the lower electrode corresponding to the capacitor forming region is exposed, and sequentially forming a dielectric layer and an upper electrode on the capacitor forming region to fabricate a capacitor.
摘要翻译：提供一种制造具有电特性增强的半导体器件的方法。该方法包括在半导体衬底上顺序地形成下电极和绝缘层，对与电容器形成区相对应的绝缘层的区域进行干蚀刻，使得下电极不被暴露，通过湿法形成绝缘层，蚀刻绝缘层，使得与电容器形成区域相对应的下电极的区域被暴露，并且在电容器形成区域上依次形成电介质层和上电极以制造电容器。

10. 发明申请

US20070169697A1 Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus thereof 审中-公开
标题翻译：通过简化形成介质层的工艺制造半导体器件的电容器的方法及其装置
公开(公告)号：US20070169697A1
公开(公告)日：2007-07-26
申请号：US11710099
申请日：2007-02-23
申请人： Yong-kuk Jeong , Myong-geun Yoon , Seok-jun Won , Dae-jin Kwon
发明人： Yong-kuk Jeong , Myong-geun Yoon , Seok-jun Won , Dae-jin Kwon
IPC分类号： C23C16/00
CPC分类号： H01L27/10852 , H01L21/02175 , H01L21/02183 , H01L21/022 , H01L21/02271 , H01L21/0228 , H01L21/02337 , H01L21/3141 , H01L21/31637 , H01L27/10817 , H01L28/40 , H01L28/56 , H01L28/90
摘要： In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.
摘要翻译：在制造半导体器件的电容器及其装置的方法中，仅使用不含反应气体的源气体来沉积电介质层，并且一次执行固化过程。因此，实现了过程简化，产量提高和设备简化。在独立存储器或嵌入式存储器中，步进覆盖得到增强，并且防止了存储节点接触插头的氧化。此外，在使用比独立电容器或嵌入式电容器更厚的电介质层的模拟电容器，RF电容器或高压电容器中，制造工艺被大大简化。

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