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1. 发明授权

US07368917B2 Electronic circuit for ion sensor with body effect reduction 有权
标题翻译：离子传感器电子电路，减少身体效应
公开(公告)号：US07368917B2
公开(公告)日：2008-05-06
申请号：US11450456
申请日：2006-06-12
申请人： Wen-Yaw Chung , Chung-Huang Yang , Dorota Genowefa Pijanowska , Piotr Grabiec , Bohdan Jaroszewicz , Wladyslaw Torbicz
发明人： Wen-Yaw Chung , Chung-Huang Yang , Dorota Genowefa Pijanowska , Piotr Grabiec , Bohdan Jaroszewicz , Wladyslaw Torbicz
IPC分类号： G01N27/62
CPC分类号： G01N27/4148
摘要： An electronic circuit for ion sensor with the body effect reduction includes a bridge-type floating source circuit provided with an input terminal, an output terminal reflecting the change in the potential dependent on ion concentration, and an ion-sensitive field effect transistor (ISFET) wherein one terminal of the ISFET is coupled with the output terminal; a current mirror for providing a current to the bridge-type circuit; a third transistor for receiving the operating current provided by the current mirror, identical to the current provided to the ISFET; a differential amplifying circuit, wherein one input terminal of the amplifying circuit is input with a reference voltage, and the other input terminal is coupled with the output of the bridge-type readout circuit; and a third amplifier to generate a differential output voltage compensated for the body effect, temperature and time drift effects.
摘要翻译：具有体效应降低的离子传感器的电子电路包括具有输入端子的桥式浮动源电路，反映离子浓度的电位变化的输出端子以及离子敏感场效应晶体管（ISFET）其中所述ISFET的一个端子与所述输出端子耦合; 用于向桥式电路提供电流的电流镜; 用于接收由电流镜提供的工作电流的第三晶体管，与提供给ISFET的电流相同; 差分放大电路，其中放大电路的一个输入端子以参考电压输入，另一个输入端子与桥式读出电路的输出端相连; 以及第三放大器，以产生补偿体效应，温度和时间漂移效应的差分输出电压。

2. 发明申请

US20070089988A1 Electronic circuit for ion sensor with body effect reduction 有权
标题翻译：离子传感器电子电路，减少身体效应
公开(公告)号：US20070089988A1
公开(公告)日：2007-04-26
申请号：US11450456
申请日：2006-06-12
申请人： Wen-Yaw Chung , Chung-Huang Yang , Dorota Genowefa Pijanowska , Piotr Grabiec , Bohdan Jaroszewicz , Wladyslaw Torbicz
发明人： Wen-Yaw Chung , Chung-Huang Yang , Dorota Genowefa Pijanowska , Piotr Grabiec , Bohdan Jaroszewicz , Wladyslaw Torbicz
IPC分类号： G01N27/26
CPC分类号： G01N27/4148
摘要： An electronic circuit for ion sensor with the body effect reduction includes a bridge-type floating source circuit provided with an input terminal, an output terminal reflecting the change in the potential dependent on ion concentration, and an ion-sensitive field effect transistor (ISFET) wherein one terminal of the ISFET is coupled with the output terminal; a current mirror for providing a current to the bridge-type circuit; a third transistor for receiving the operating current provided by the current mirror, identical to the current provided to the ISFET; a differential amplifying circuit, wherein one input terminal of the amplifying circuit is input with a reference voltage, and the other input terminal is coupled with the output of the bridge-type readout circuit; and a third amplifier to generate a differential output voltage compensated for the body effect, temperature and time drift effects.
摘要翻译：具有体效应降低的离子传感器的电子电路包括具有输入端子的桥式浮动源电路，反映离子浓度的电位变化的输出端子以及离子敏感场效应晶体管（ISFET）其中所述ISFET的一个端子与所述输出端子耦合; 用于向桥式电路提供电流的电流镜; 用于接收由电流镜提供的工作电流的第三晶体管，与提供给ISFET的电流相同; 差分放大电路，其中放大电路的一个输入端子以参考电压输入，另一个输入端子与桥式读出电路的输出端相连; 以及第三放大器，以产生补偿体效应，温度和时间漂移效应的差分输出电压。

3. 发明授权

US06906524B2 Electronic circuit for ion sensor 失效
标题翻译：离子传感器电子电路
公开(公告)号：US06906524B2
公开(公告)日：2005-06-14
申请号：US10647227
申请日：2003-08-26
申请人： Wen-Yaw Chung , Alfred Krzyskow , Yeong-Tsair Lin , Dorota Genowefa Pijanowska , Chung-Huang Yang , Wladyslaw Torbicz
发明人： Wen-Yaw Chung , Alfred Krzyskow , Yeong-Tsair Lin , Dorota Genowefa Pijanowska , Chung-Huang Yang , Wladyslaw Torbicz
IPC分类号： G01N27/414 , G01N27/62
CPC分类号： G01N27/4148
摘要： An ion sening circuit comprises a bridge sensing circuit and a differential amplifying circuit. The bridge sensing circuit detects the ion concentration of the solution in the operation mode of constant voltage and constant current. The differential amplifying circuit compares the output of the bridge sensing circuit and a floating reference voltage, thereby the delivered voltage to the bridge sensing circuit, such that the opeation mode of constant voltage and constant current is formed accordingly. The main features of the disclosed circuit are that it grounds the reference electrode and floats the source terminal. The drawbacks of not being manufactured with intergrated circuits by CMOS technology and low benefits when applied to sensor arrays are avoided by the disclosed circuit.
摘要翻译：离子振荡电路包括桥接感测电路和差分放大电路。桥式感测电路在恒定电压和恒定电流的工作模式下检测溶液的离子浓度。差分放大电路将桥接检测电路的输出和浮动参考电压进行比较，从而将输出的电压与桥接器检测电路进行比较，从而相应地形成恒定电压和恒定电流的运行模式。所公开的电路的主要特征是它使参考电极接地并漂移源极端子。所公开的电路避免了不采用CMOS技术制造集成电路和应用于传感器阵列的优点的缺点。

4. 发明授权

US07663357B2 Signal readout circuit for amperometric sensor 失效
标题翻译：电流传感器信号读出电路
公开(公告)号：US07663357B2
公开(公告)日：2010-02-16
申请号：US11945365
申请日：2007-11-27
申请人： Wen-Yaw Chung , Tsai-Tseng Kuo , Ying-Hsian Wang , Dorota Genowefa Pijanowska , Wladyslaw Torbicz
发明人： Wen-Yaw Chung , Tsai-Tseng Kuo , Ying-Hsian Wang , Dorota Genowefa Pijanowska , Wladyslaw Torbicz
IPC分类号： G01N27/00 , G01N27/404
CPC分类号： G01N27/3273
摘要： A signal readout circuit for amperometric sensor for reading a readout signal of a sensor includes an amplifier, a first transistor, a second transistor, and a first resistor. A negative input end of the amplifier receives an input voltage, and a positive input end of the amplifier is connected to a reference electrode of the sensor. Gates of the first transistor and the second transistor are connected to an output end of the amplifier, a drain of the first transistor is connected to a counter electrode of the sensor, and a drain of the second transistor is connected to the first resistor.
摘要翻译：用于读取传感器的读出信号的电流传感器的信号读出电路包括放大器，第一晶体管，第二晶体管和第一电阻器。放大器的负输入端接收输入电压，放大器的正输入端连接到传感器的参考电极。第一晶体管和第二晶体管的栅极连接到放大器的输出端，第一晶体管的漏极连接到传感器的对电极，第二晶体管的漏极连接到第一电阻器。

5. 发明申请

US20080169800A1 SIGNAL READOUT CIRCUIT FOR AMPEROMETRIC SENSOR 失效
标题翻译：用于放大传感器的信号读出电路
公开(公告)号：US20080169800A1
公开(公告)日：2008-07-17
申请号：US11945365
申请日：2007-11-27
申请人： Wen-Yaw Chung , Tsai-Tseng Kuo , Ying-Hsian Wang , Dorota Genowefa Pijanowska , Wladyslaw Torbicz
发明人： Wen-Yaw Chung , Tsai-Tseng Kuo , Ying-Hsian Wang , Dorota Genowefa Pijanowska , Wladyslaw Torbicz
IPC分类号： G01N27/00
CPC分类号： G01N27/3273
摘要： A signal readout circuit for amperometric sensor for reading a readout signal of a sensor includes an amplifier, a first transistor, a second transistor, and a first resistor. A negative input end of the amplifier receives an input voltage, and a positive input end of the amplifier is connected to a reference electrode of the sensor. Gates of the first transistor and the second transistor are connected to an output end of the amplifier, a drain of the first transistor is connected to a counter electrode of the sensor, and a drain of the second transistor is connected to the first resistor.
摘要翻译：用于读取传感器的读出信号的电流传感器的信号读出电路包括放大器，第一晶体管，第二晶体管和第一电阻器。放大器的负输入端接收输入电压，放大器的正输入端连接到传感器的参考电极。第一晶体管和第二晶体管的栅极连接到放大器的输出端，第一晶体管的漏极连接到传感器的对电极，第二晶体管的漏极连接到第一电阻器。

6. 发明授权

US07919959B2 Signal readout circuit of amperometric sensor 有权
标题翻译：电流传感器信号读出电路
公开(公告)号：US07919959B2
公开(公告)日：2011-04-05
申请号：US12628827
申请日：2009-12-01
申请人： Wen-Yaw Chung , Shao-Chun Cheng , Chiung-Cheng Chuang , Febus-Reidj Guinto Cruz , Dorota Genowefa Pijanowska
发明人： Wen-Yaw Chung , Shao-Chun Cheng , Chiung-Cheng Chuang , Febus-Reidj Guinto Cruz , Dorota Genowefa Pijanowska
IPC分类号： G01R1/30
CPC分类号： G01N27/3273
摘要： A signal readout circuit comprises a first amplifier, a second amplifier and first to fourth transistors. The signal readout circuit has a first electrode, a second electrode, and a third electrode. The signal readout circuit applied in a wide current-sensing range of amperometric chemical sensing. The readout circuit may be applied in electrochemical sensing such as glucose, so as to read out a current signal of an amperometric sensor. Through a design of low input impedance, sensing signals in a wide current range can be sensed in the readout circuit. Also, a current mirror structure is used to copy the input current to an output current, such that an output signal range of the output signals of the current circuit is not limited by a supplied voltage.
摘要翻译：信号读出电路包括第一放大器，第二放大器和第一至第四晶体管。信号读出电路具有第一电极，第二电极和第三电极。信号读出电路应用在电流敏感化学传感的宽电流感应范围内。读出电路可以应用于诸如葡萄糖的电化学感测中，以便读出电流传感器的电流信号。通过低输入阻抗的设计，可以在读出电路中检测宽电流范围内的感测信号。此外，使用电流镜结构将输入电流复制到输出电流，使得电流电路的输出信号的输出信号范围不受提供的电压的限制。

7. 发明授权

US06897081B2 Method for fabricating a monolithic chip including pH, temperature and photo-intensity multi-sensors and a readout circuit 失效
标题翻译：用于制造包括pH，温度和光强度多传感器以及读出电路的单片芯片的方法
公开(公告)号：US06897081B2
公开(公告)日：2005-05-24
申请号：US10348950
申请日：2003-01-23
申请人： Stephen S. K. Hsiung , Jung-Chuan Chou , Tai-Ping Sun , Wen-Yaw Chung , Yuan-Lung Chin , Chung-We Pan
发明人： Stephen S. K. Hsiung , Jung-Chuan Chou , Tai-Ping Sun , Wen-Yaw Chung , Yuan-Lung Chin , Chung-We Pan
IPC分类号： H01L21/00 , H01L21/8238 , H01L27/144
CPC分类号： H01L27/144
摘要： A method for fabricating a monolithic chip including multi-sensors that can detect pH, temperature, photo-intensity simultaneously and a readout circuit. As such, as well as the multi-sensors, the readout circuit also has a reduced chip area at low cost since selection switches are used to sequentially read pH, temperature and photo-intensity detecting values, wherein the readout action is completed within a clock cycle. The entire structure is fabricated with standard 0.5 μm CMOS IC, Double Poly Double Metal (DPDM), n-well technology and allows the integration of the on-chip signal conditioning circuitry. The chip fabricated by the method can not only sense the Ph, temperature, photo values but also apply the extended gate field effect transistor (EGFET) on the temperature and light compensation to produce realistic pH values.
摘要翻译：一种制造包括可以同时检测pH，温度，光强度的多传感器和读出电路的单片式芯片的方法。因此，除了多传感器之外，由于选择开关用于依次读取pH，温度和光强度检测值，读出电路也以低成本降低了芯片面积，其中读出动作在时钟内完成周期。整个结构采用标准0.5毫米CMOS IC，双聚双金属（DPDM），n阱技术制造，并允许集成片上信号调理电路。通过该方法制造的芯片不仅可以检测Ph，温度，光值，还可以应用扩展栅场效应晶体管（EGFET）对温度和光补偿，以产生逼真的pH值。

8. 发明授权

US06218208B1 Fabrication of a multi-structure ion sensitive field effect transistor with a pH sensing layer of a tin oxide thin film 有权
标题翻译：制造具有氧化锡薄膜的pH感应层的多结构离子敏感场效应晶体管
公开(公告)号：US06218208B1
公开(公告)日：2001-04-17
申请号：US09347226
申请日：1999-07-02
申请人： Jung-Chuan Chou , Wen-Yaw Chung , Shen-Kan Hsiung , Tai-Ping Sun , Hung-Kwei Liao
发明人： Jung-Chuan Chou , Wen-Yaw Chung , Shen-Kan Hsiung , Tai-Ping Sun , Hung-Kwei Liao
IPC分类号： H01L2100
CPC分类号： G01N27/414
摘要： A sensitive material-tin oxide (SnO2) obtained by thermal evaporation or by r.f. reactive sputtering is used as a high-pH-sensitive material for a Multi-Structure Ion Sensitive Field Effect Transistor. The multi-structure of this Ion Sensitive Field Effect Transistor (ISFET) includes SnO2/SiO2 gate ISFET or SnO2/Si3N4/SiO2 gate ISFET respectively, and which have high performances such as a linear pH sensitivity of approximately 56˜58 mV/pH in a concentration range between pH2 and pH10. A low drift characteristics of approximately 5 mv/day, response time is less than 0.1 second, and an isothermal point of this ISFET sensor can be obtained if the device operates with an adequate drain-source current. In addition, this invention has other advantages, such as the inexpensive fabrication system, low cost, and mass production characteristics. Based on these characteristics, a disposal sensing device can be achieved. Thus, this invention has a high feasibility in Ion Sensitive Field Effect Transistor.
摘要翻译：通过热蒸发或r.f.获得的敏感材料 - 氧化锡（SnO 2）。反应溅射用作多结构离子敏感场效应晶体管的高pH敏感材料。该离子敏感场效应晶体管（ISFET）的多结构分别包括SnO 2 / SiO 2栅极ISFET或SnO 2 / Si 3 N 4 / SiO 2栅极ISFET，并且具有高性能，例如约56〜58mV / pH的线性pH灵敏度 pH2和pH10之间的浓度范围。大约5mv /天的低漂移特性，响应时间小于0.1秒，如果器件以足够的漏源电流工作，则可以获得该ISFET传感器的等温点。此外，本发明还具有廉价的制造系统，低成本和批量生产特性等其它优点。基于这些特性，可以实现处置感测装置。因此，本发明在离子敏感场效应晶体管中具有很高的可行性。

9. 发明授权

US07638157B2 Method of fabricating electrode assembly of sensor 失效
标题翻译：制造传感器电极组件的方法
公开(公告)号：US07638157B2
公开(公告)日：2009-12-29
申请号：US11533358
申请日：2006-09-19
申请人： Shen-Kan Hsiung , Jung-Chuan Chou , Tai-Ping Sun , Wen-Yaw Chung , Li-Te Yin , Chung-We Pan
发明人： Shen-Kan Hsiung , Jung-Chuan Chou , Tai-Ping Sun , Wen-Yaw Chung , Li-Te Yin , Chung-We Pan
IPC分类号： G01N1/28
CPC分类号： C12Q1/006 , C12N9/0006 , C12N11/08
摘要： A method of fabricating an electrode assembly of a sensor is described. The sensor has a field effect transistor. The electrode assembly is separated from the field effect transistor by only a conductive line. The sensor is functioned to detect different glucose concentrations. A solid layer of tin oxide is deposited on a substrate board. A β-D-glucose oxidase and polyvinyl alcohol bearing styrylpyridinium groups are placed in 100 μl of sulfuric acid, to form an enzyme mixture. The enzyme mixture is dropped on the solid layer of tin oxide. The enzyme mixture is dried. The enzyme mixture is exposed to a UV ray. The enzyme mixture is dried and stabilized. The enzyme mixture is immersed in a sulfuric buffer.
摘要翻译：描述了制造传感器的电极组件的方法。该传感器具有场效应晶体管。电极组件仅通过导线与场效应晶体管分离。该传感器用于检测不同的葡萄糖浓度。在基板上沉积固体氧化锡层。将β-D-葡萄糖氧化酶和含有苯乙烯基吡啶鎓基团的聚乙烯醇基团置于100毫升硫酸中以形成酶混合物。将酶混合物滴在氧化锡的固体层上。将酶混合物干燥。将酶混合物暴露于紫外线。将酶混合物干燥并稳定。将酶混合物浸入硫酸缓冲液中。

10. 发明授权

US06974716B2 Method for fabricating a titanium nitride sensing membrane on an EGFET 失效
标题翻译：在EGFET上制造氮化钛感测膜的方法
公开(公告)号：US06974716B2
公开(公告)日：2005-12-13
申请号：US10802907
申请日：2004-03-17
申请人： Stephen S. K. Hsiung , Jung-Chuan Chou , Tai-Ping Sun , Wen-Yaw Chung , Yuan-Lung Chin , Lei Zhen Ce
发明人： Stephen S. K. Hsiung , Jung-Chuan Chou , Tai-Ping Sun , Wen-Yaw Chung , Yuan-Lung Chin , Lei Zhen Ce
IPC分类号： G01N27/414 , H01L21/00 , H01L21/203 , H01L29/772
CPC分类号： G01N27/414
摘要： A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET). The method comprises the steps of depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation and forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process. Because TiN is suitable for use in a standard CMOS process, all the elements in the sensing device can be mass produced and offer the benefits of low cost, high yield, and high performance.
摘要翻译：在扩展栅场效应晶体管（EGFET）上制造氮化钛（TiN）感测膜的方法。该方法包括以下步骤：使用热蒸发在EGFET的栅极端子上沉积铝层，并在敏感窗口中的铝层的暴露部分上形成TiN感测膜，作为离子敏感传感器（pH传感器），使用射频（RF）溅射工艺。由于TiN适用于标准CMOS工艺，因此可以大量生产传感器件中的所有元件，并提供低成本，高产量和高性能的优点。

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