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1. 发明申请

US20120048296A1 Cleaning Method for Wafer 审中-公开
标题翻译：晶圆清洗方法
公开(公告)号：US20120048296A1
公开(公告)日：2012-03-01
申请号：US12868726
申请日：2010-08-26
申请人： Wen-Chin Lin , Kai-Chun Yang , Jen-Chieh Lin , Jeng-Yu Fang , Chia-Lin Hsu , Teng-Chun Tsai , Wei-Che Tsao
发明人： Wen-Chin Lin , Kai-Chun Yang , Jen-Chieh Lin , Jeng-Yu Fang , Chia-Lin Hsu , Teng-Chun Tsai , Wei-Che Tsao
IPC分类号： B08B7/00 , B08B3/00
CPC分类号： C11D11/0047 , C11D11/0064 , H01L21/02074
摘要： A cleaning method for a wafer is provided. First, a first cleaning process is performed wherein the first cleaning process includes providing a cleaning solution having a first concentration. Next, a second cleaning process is performed, wherein the second cleaning process includes providing the cleaning solution having a second concentration. The second concentration is substantially greater than the first concentration. Next, a post-cleaning process is performed to provide dilute water.
摘要翻译：提供了一种用于晶片的清洁方法。首先，进行第一清洗处理，其中第一清洗过程包括提供具有第一浓度的清洗溶液。接下来，执行第二清洁处理，其中第二清洁处理包括提供具有第二浓度的清洁溶液。第二浓度显着大于第一浓度。接下来，进行后清洗处理以提供稀释水。

2. 发明申请

US20110189855A1 METHOD FOR CLEANING SURFACE CONTAINING Cu 审中-公开
标题翻译：清洗含Cu表面的方法
公开(公告)号：US20110189855A1
公开(公告)日：2011-08-04
申请号：US12699071
申请日：2010-02-03
申请人： Jen-Chieh Lin , Kai-Chun Yang , Chih-Yueh Li , Geng-Yu Fan , Jeng-Yu Fang , Teng-Chun Tsai , Chia-Lin Hsu
发明人： Jen-Chieh Lin , Kai-Chun Yang , Chih-Yueh Li , Geng-Yu Fan , Jeng-Yu Fang , Teng-Chun Tsai , Chia-Lin Hsu
IPC分类号： H01L21/306
CPC分类号： H01L21/306
摘要： A method for cleaning a surface is disclosed. First, a substrate including Cu and a barrier layer is provided. Second, a first chemical mechanical polishing procedure is performed on the substrate. Then, a second chemical mechanical polishing procedure is performed on the barrier layer. The second chemical mechanical polishing procedure includes performing a main chemical mechanical polishing procedure to partially remove the barrier layer and performing a chemical buffing procedure on the substrate using a chemical solution which has a pH value of about 6 to about 8 to remove residues on the substrate after the main chemical mechanical polishing procedure. Later, a water rinsing procedure is performed on the substrate. Afterwards, a post clean procedure is performed on the substrate after the second chemical mechanical polishing procedure.
摘要翻译：公开了一种清洁表面的方法。首先，提供包含Cu和阻挡层的基板。其次，在基板上进行第一化学机械抛光工序。然后，在阻挡层上进行第二化学机械抛光工序。第二化学机械抛光方法包括执行主要的化学机械抛光方法以部分去除阻挡层并使用pH值为约6至约8的化学溶液在基底上进行化学抛光过程以去除基底上的残留物经过主要的化学机械抛光程序。之后，在基板上进行水洗工序。之后，在第二化学机械抛光程序之后，在基板上执行后清洁程序。

3. 发明申请

US20070259525A1 CMP PROCESS 有权
标题翻译： CMP工艺
公开(公告)号：US20070259525A1
公开(公告)日：2007-11-08
申请号：US11308794
申请日：2006-05-05
申请人： Chih-Yueh Li , Kai-Chun Yang , Tzu-Yi Chuang , Chien-Hsuan Chen , Min-Hao Yeh
发明人： Chih-Yueh Li , Kai-Chun Yang , Tzu-Yi Chuang , Chien-Hsuan Chen , Min-Hao Yeh
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/7684 , B24B37/0056 , B24B37/042 , H01L21/31053 , H01L21/3212 , Y10T156/1056
摘要： A CMP process is provided. A first polishing process on a wafer is performed using a first hard polishing pad with a first slurry. Then, a buffering process on the wafer is performed using a soft polishing pad with a cleaning agent to buffer the pH value in the first polishing process and to remove at least portion of the first slurry and the cleaning agent by the contact with the first soft polishing pad simultaneously. Thereafter, a second polishing process on the wafer is performed using a second hard polishing pad with a second slurry such that the pH value after the buffering process is between the pH value in the first polishing process and the pH value in the second polishing process. The method can avoid the scratch issue of wafer surface by particles resulting from pH shock and cross contamination.
摘要翻译：提供CMP工艺。使用具有第一浆料的第一硬质抛光垫进行晶片上的第一抛光工艺。然后，使用具有清洁剂的软抛光垫进行晶片上的缓冲处理，以缓冲第一抛光工艺中的pH值，并且通过与第一软件的接触来去除第一浆料和清洁剂的至少一部分抛光垫同时。此后，使用具有第二浆料的第二硬质抛光垫进行晶片上的第二抛光工艺，使得缓冲过程之后的pH值在第一抛光工艺中的pH值和第二抛光工艺中的pH值之间。该方法可以避免由pH冲击和交叉污染引起的颗粒对晶片表面的划痕问题。

4. 发明申请

US20090023362A1 RETAINING RING FOR CHEMICAL MECHANICAL POLISHING, ITS OPERATIONAL METHOD AND APPLICATION SYSTEM 审中-公开
标题翻译：化学机械抛光保持环及其操作方法和应用系统
公开(公告)号：US20090023362A1
公开(公告)日：2009-01-22
申请号：US11778650
申请日：2007-07-17
申请人： Tzu-Shin Chen , Chih-Chin Yang , Min-Hao Yeh , Kai-Chun Yang , Chan Lu , Tzu-Hui Wu , Cheng-Hsun Wu
发明人： Tzu-Shin Chen , Chih-Chin Yang , Min-Hao Yeh , Kai-Chun Yang , Chan Lu , Tzu-Hui Wu , Cheng-Hsun Wu
IPC分类号： B24B37/04 , B24B1/00 , B24B41/06
CPC分类号： B24B37/32 , B24B7/228
摘要： A retaining ring for CMP is disclosed. The retaining ring has a plurality of grooves. The grooves have rounded sidewalls. Because the sidewalls of the grooves of the retaining ring are rounded, the slurry is not apt to accumulate around them and the pad is less scratched. Accordingly, the micro-scratches on the wafer surface are reduced and the yield of the CMP step is increased. Its operational method and application system are also disclosed in this invention.
摘要翻译：公开了一种用于CMP的保持环。保持环具有多个槽。凹槽具有圆形的侧壁。由于保持环的槽的侧壁是圆形的，所以浆料不易于在其周围积聚，并且垫较少划伤。因此，晶片表面上的微划痕减小，并且CMP步骤的产量增加。其操作方法和应用系统也在本发明中公开。

5. 发明授权

US07510974B2 CMP process 有权
标题翻译： CMP工艺
公开(公告)号：US07510974B2
公开(公告)日：2009-03-31
申请号：US11308794
申请日：2006-05-05
申请人： Chih-Yueh Li , Kai-Chun Yang , Tzu-Yi Chuang , Chien-Hsuan Chen , Min-Hao Yeh
发明人： Chih-Yueh Li , Kai-Chun Yang , Tzu-Yi Chuang , Chien-Hsuan Chen , Min-Hao Yeh
IPC分类号： H01L21/302
CPC分类号： H01L21/7684 , B24B37/0056 , B24B37/042 , H01L21/31053 , H01L21/3212 , Y10T156/1056
摘要： A CMP process is provided. A first polishing process on a wafer is performed using a first hard polishing pad with a first slurry. Then, a buffering process on the wafer is performed using a soft polishing pad with a cleaning agent to buffer the pH value in the first polishing process and to remove at least portion of the first slurry and the cleaning agent by the contact with the first soft polishing pad simultaneously. Thereafter, a second polishing process on the wafer is performed using a second hard polishing pad with a second slurry such that the pH value after the buffering process is between the pH value in the first polishing process and the pH value in the second polishing process. The method can avoid the scratch issue of wafer surface by particles resulting from pH shock and cross contamination.
摘要翻译：提供CMP工艺。使用具有第一浆料的第一硬质抛光垫进行晶片上的第一抛光工艺。然后，使用具有清洁剂的软抛光垫进行晶片上的缓冲处理，以缓冲第一抛光工艺中的pH值，并且通过与第一软件的接触来去除第一浆料和清洁剂的至少一部分抛光垫同时。此后，使用具有第二浆料的第二硬质抛光垫进行晶片上的第二抛光工艺，使得缓冲过程之后的pH值在第一抛光工艺中的pH值和第二抛光工艺中的pH值之间。该方法可以避免由pH冲击和交叉污染导致的颗粒对晶片表面的划痕问题。

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