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1. 发明授权

US06303043B1 Method of fabricating preserve layer 有权
标题翻译：制作保鲜层的方法
公开(公告)号：US06303043B1
公开(公告)日：2001-10-16
申请号：US09348407
申请日：1999-07-07
申请人： Wei-Shiau Chen , Ruoh-Haw Chang , Shu-Jen Chen
发明人： Wei-Shiau Chen , Ruoh-Haw Chang , Shu-Jen Chen
IPC分类号： H01L2100
CPC分类号： H01L21/76801 , G02F1/133553 , G02F1/136277 , H01L21/76832 , H01L21/76834 , Y10S438/954
摘要： A method of fabricating a preserve layer. A top metallic layer is formed over the substrate. Portions of the metallic layer and the substrate are removed to form a trench. A conformal pad oxide layer is formed over the substrate. A conformal first nitride layer is formed on the pad oxide layer. A spin-on glass layer is formed on the first nitride layer to fill the trench. An etching back step is performed to remove a portion of the spin-on glass layer. The remaining spin-on glass layer fills the trench to the surface of the first nitride layer above the top metallic layer. An oxide layer is formed over the substrate. A second nitride layer is formed on the oxide layer. A preserve layer comprising the pad oxide layer, the first nitride layer, the oxide layer, and the second nitride layer is formed.
摘要翻译：一种保护层的制造方法。顶层金属层形成在衬底上。去除部分金属层和基底以形成沟槽。在衬底上形成保形衬垫氧化物层。在焊盘氧化物层上形成共形的第一氮化物层。在第一氮化物层上形成旋涂玻璃层以填充沟槽。执行蚀刻返回步骤以去除旋涂玻璃层的一部分。剩余的旋涂玻璃层将沟槽填充到顶部金属层上方的第一氮化物层的表面。在衬底上形成氧化物层。在氧化物层上形成第二氮化物层。形成包括衬垫氧化物层，第一氮化物层，氧化物层和第二氮化物层的保护层。

2. 发明授权

US06303484B1 Method of manufacturing dummy pattern 失效
标题翻译：制造虚拟图案的方法
公开(公告)号：US06303484B1
公开(公告)日：2001-10-16
申请号：US09482138
申请日：2000-01-12
申请人： Wei-Shiau Chen
发明人： Wei-Shiau Chen
IPC分类号： H01L213205
CPC分类号： H01L21/31053 , Y10S438/926
摘要： A method of fabricating a dummy pattern is proposed. A semiconductor substrate is divided into a dense region and a sparse region. Conducting patterns are formed on the dense region. A dielectric layer is formed over the substrate and the conducting patterns. Photoresist patterns are formed on the dielectric layer above the sparse region. The dielectric layer is etched back to form a plurality of spacers on the sidewall of the conducting patterns, and simultaneously, a plurality of dummy patterns are formed on the sparse region.
摘要翻译：提出了制造虚拟图案的方法。半导体衬底被分成致密区域和稀疏区域。在密集区域形成导电图案。介电层形成在衬底和导电图案上。在稀疏区域上的电介质层上形成光刻胶图形。回蚀电介质层以在导电图案的侧壁上形成多个间隔物，并且同时，在稀疏区域上形成多个虚设图案。

3. 发明授权

US07226798B2 Fabrication method for a multi-layered thin film protective layer 有权
标题翻译：多层薄膜保护层的制造方法
公开(公告)号：US07226798B2
公开(公告)日：2007-06-05
申请号：US10794528
申请日：2004-03-05
申请人： Wei-Shiau Chen , Kao-Su Huang
发明人： Wei-Shiau Chen , Kao-Su Huang
IPC分类号： H01L21/311 , H01L21/56
CPC分类号： G02F1/13394 , G02F1/133345 , G02F1/133553 , G02F1/13454
摘要： A fabrication method for a multi-layered thin film protective layer, which is applicable on a substrate having a peripheral circuit area and a pixel cell area, is described. Metal layers and pixel cells are formed on the peripheral circuit area and the pixel cell area, respectively. A first oxide layer, a silicon nitride layer and a second oxide layer are sequentially formed on the pixel cells and the metal layers. The second oxide layer is then patterned to define a pre-determined position of a pad spacer in the pixel cell area and the peripheral circuit area. The silicon nitride layer and the first oxide layer are further defined to form a first protective layer in the peripheral circuit area and to from a pad spacer in the pixel cell area exposing the pixel cells. A second protective layer is then formed on the exposed pixel cells.
摘要翻译：描述了可应用于具有外围电路区域和像素单元面积的基板的多层薄膜保护层的制造方法。金属层和像素单元分别形成在外围电路区域和像素单元区域上。第一氧化物层，氮化硅层和第二氧化物层依次形成在像素单元和金属层上。然后将第二氧化物层图案化以限定像素单元区域和外围电路区域中的衬垫间隔物的预定位置。进一步限定氮化硅层和第一氧化物层，以在外围电路区域中形成第一保护层，并且从暴露像素单元的像素单元区域中的衬垫间隔件形成第一保护层。然后在曝光的像素单元上形成第二保护层。

4. 发明授权

US6121151A Method of fabricating passivation layer in liquid crystal display 失效
标题翻译：在液晶显示器中制造钝化层的方法
公开(公告)号：US6121151A
公开(公告)日：2000-09-19
申请号：US316585
申请日：1999-05-21
申请人： Wei-Shiau Chen
发明人： Wei-Shiau Chen
IPC分类号： G02F1/1335 , H01L21/00
CPC分类号： G02F1/133553
摘要： A method for fabricating a passivation layer. An isolation layer is formed on a metal layer over the substrate. The isolation layer on the metal layer is removed by chemical-mechanical polishing and dry etching. The planarization of the metal layer thus is obtained. A passivation layer having a certain structure and a thickness combination of different layers is formed over the substrate. The reflection rate of the metal layer is significantly enhanced.
摘要翻译：一种制造钝化层的方法。在衬底上的金属层上形成隔离层。通过化学机械抛光和干法蚀刻去除金属层上的隔离层。由此得到金属层的平坦化。在衬底上形成具有一定结构和不同层的厚度组合的钝化层。金属层的反射率显着提高。

5. 发明申请

US20090068785A1 MANUFACTURING METHOD OF IMAGE SENSOR DEVICE 审中-公开
标题翻译：图像传感器装置的制造方法
公开(公告)号：US20090068785A1
公开(公告)日：2009-03-12
申请号：US12265390
申请日：2008-11-05
申请人： Wei-Shiau Chen , Freddy Hsieh
发明人： Wei-Shiau Chen , Freddy Hsieh
IPC分类号： H01L21/00
CPC分类号： H01L27/14627 , H01L27/14621
摘要： A manufacturing method of image sensor device is provided. The image sensor device is suitable for a substrate having at least one bonding pad. A plurality of photodiode sensing areas is formed on the substrate, at least a dielectric layer is formed over the substrate and the bonding pad is disposed in the dielectric layer. The method includes forming a cover layer on the dielectric layer. Next, the cover layer is patterned to form an opening in a first portion of the cover layer on the bonding pad. A second portion of the cover layer in the opening is retained to cover a portion of the surface of the bonding pad. A plurality of color filters is formed on the cover layer, and then a planarization layer is formed on the cover layer and the color filters. Thereafter, a plurality of micro lenses is formed on the planarization layer.
摘要翻译：提供了图像传感器装置的制造方法。图像传感器装置适用于具有至少一个接合焊盘的基板。在基板上形成多个光电二极管检测区域，至少在基板上形成电介质层，并且将接合焊盘设置在电介质层中。该方法包括在电介质层上形成覆盖层。接下来，覆盖层被图案化以在接合焊盘上的覆盖层的第一部分中形成开口。开口中的覆盖层的第二部分被保持以覆盖接合焊盘的表面的一部分。在覆盖层上形成多个滤色器，然后在覆盖层和滤色器上形成平坦化层。此后，在平坦化层上形成多个微透镜。

6. 发明申请

US20050054129A1 Fabrication method for a multi-layered thin film protective layer 有权
标题翻译：多层薄膜保护层的制造方法
公开(公告)号：US20050054129A1
公开(公告)日：2005-03-10
申请号：US10794528
申请日：2004-03-05
申请人： Wei-Shiau Chen , Kao-Su Huang
发明人： Wei-Shiau Chen , Kao-Su Huang
IPC分类号： G02F1/1333 , G02F1/1335 , G02F1/1339 , G02F1/1362 , H01L21/00 , G02F1/1343
CPC分类号： G02F1/13394 , G02F1/133345 , G02F1/133553 , G02F1/13454
摘要： A fabrication method for a multi-layered thin film protective layer, which is applicable on a substrate having a peripheral circuit area and a pixel cell area, is described. Metal layers and pixel cells are formed on the peripheral circuit area and the pixel cell area, respectively. A first oxide layer, a silicon nitride layer and a second oxide layer are sequentially formed on the pixel cells and the metal layers. The second oxide layer is then patterned to define a pre-determined position of a pad spacer in the pixel cell area and the peripheral circuit area. The silicon nitride layer and the first oxide layer are further defined to form a first protective layer in the peripheral circuit area and to from a pad spacer in the pixel cell area exposing the pixel cells. A second protective layer is then formed on the exposed pixel cells.
摘要翻译：对可应用于具有外围电路区域和像素单元面积的基板的多层薄膜保护层的制造方法进行说明。金属层和像素单元分别形成在外围电路区域和像素单元区域上。第一氧化物层，氮化硅层和第二氧化物层依次形成在像素单元和金属层上。然后将第二氧化物层图案化以限定像素单元区域和外围电路区域中的衬垫间隔物的预定位置。进一步限定氮化硅层和第一氧化物层，以在外围电路区域中形成第一保护层，并且从暴露像素单元的像素单元区域中的衬垫间隔件形成第一保护层。然后在曝光的像素单元上形成第二保护层。

7. 发明授权

US06421108B1 Method for fabricating passivation layer 失效
标题翻译：钝化层制造方法
公开(公告)号：US06421108B1
公开(公告)日：2002-07-16
申请号：US09313516
申请日：1999-05-17
申请人： Wei-Shiau Chen , Shuenn-Jeng Chen , Tsan-Wen Liu
发明人： Wei-Shiau Chen , Shuenn-Jeng Chen , Tsan-Wen Liu
IPC分类号： G02F11333
CPC分类号： G02F1/133553 , G02F1/13439 , H01L21/76801
摘要： A method for fabricating a passivation layer and a liquid crystal display. For the fabrication method, a substrate is provided. An oxide layer, a first silicon nitride layer, a spin-on-glass (SOG) layer, and a second silicon nitride layer are sequentially formed over the substrate. The liquid crystal display has a controller, a dielectric layer, a metal layer, an oxide layer, a first silicon nitride layer, a spin-on-glass layer, and a second silicon nitride layer. The dielectric layer is positioned over the controller. A metal layer is positioned over the dielectric layer. An oxide layer is formed over the metal layer. A first silicon nitride layer is formed over the oxide layer. A spin-on-glass (SOG) layer is formed over the first silicon nitride layer. A second silicon nitride layer is formed over the SOG layer.
摘要翻译：一种制造钝化层和液晶显示器的方法。对于制造方法，提供基板。在衬底上顺序地形成氧化物层，第一氮化硅层，旋涂玻璃（SOG）层和第二氮化硅层。液晶显示器具有控制器，电介质层，金属层，氧化物层，第一氮化硅层，旋涂玻璃层和第二氮化硅层。电介质层位于控制器上方。金属层位于电介质层上。在金属层上形成氧化物层。在氧化物层上形成第一氮化硅层。在第一氮化硅层上形成旋涂玻璃（SOG）层。在SOG层上形成第二氮化硅层。

8. 发明申请

US20050101043A1 Manufacturing method of image sensor device 审中-公开
标题翻译：图像传感器装置的制造方法
公开(公告)号：US20050101043A1
公开(公告)日：2005-05-12
申请号：US10739645
申请日：2003-12-17
申请人： Wei-Shiau Chen , Freddy Hsieh
发明人： Wei-Shiau Chen , Freddy Hsieh
IPC分类号： H01L21/00 , H01L21/8238
CPC分类号： H01L27/14627 , H01L27/14621
摘要： A manufacturing method of image sensor device is provided. The image sensor device is suitable for a substrate having at least one bonding pad. Wherein a plurality of photodiode sensing areas are formed on the substrate, at least a dielectric layer is formed over the substrate and the bonding pad is disposed in the dielectric layer. Wherein a first cover layer having an opening is disposed over the dielectric layer, wherein a portion of the bonding pad is exposed within the opening, forming a second cover layer over the first cover layer and the opening, and forming color filters over the second cover layer, then forming a planarization layer over the second cover layer and the color filters, and forming a plurality of micro lenses over the planarization layer.
摘要翻译：提供了图像传感器装置的制造方法。图像传感器装置适用于具有至少一个接合焊盘的基板。其中，在基板上形成多个光电二极管感测区域，至少在基板上形成电介质层，并且将接合焊盘设置在电介质层中。其中具有开口的第一覆盖层设置在电介质层上，其中接合焊盘的一部分在开口内露出，在第一覆盖层和开口上方形成第二覆盖层，并在第二覆盖层上形成滤色器然后在第二覆盖层和滤色器上形成平坦化层，并在平坦化层上形成多个微透镜。

9. 发明授权

US06548318B2 Fabrication method for a multi-layered thin film protective layer 有权
公开(公告)号：US06548318B2
公开(公告)日：2003-04-15
申请号：US09999634
申请日：2001-10-24
申请人： Wei-Shiau Chen , Kao-Su Huang
发明人： Wei-Shiau Chen , Kao-Su Huang
IPC分类号： H01L21311
CPC分类号： G02F1/133345 , G02F1/133553 , G02F1/13394 , G02F1/13454 , Y10S438/954 , Y10S438/958
摘要： A fabrication method for a multi-layered thin film protective layer which is applicable on a substrate comprising a peripheral circuit area and a pixel cell area is described. Metal layers and pixel cells are formed on the peripheral circuit area and the pixel cell area, respectively, wherein an insulation material is formed in the interspace between the metal layers and between the pixel cells to provide a sufficient separation. Thereafter, a first oxide layer, a silicon nitride layer and a second oxide layer are sequentially formed on the pixel cells and the metal layers. The second oxide layer is then patterned to define a pre-determined position of a pad spacer in the pixel cell area and the peripheral circuit area. The silicon nitride layer and the first oxide layer are further defined to form a first protective layer in the peripheral circuit area and to from a pad spacer in the pixel cell area exposing the pixel cells. A second protective layer is then formed on the exposed pixel cells.

10. 发明授权

US06429921B1 Structure of a multi-layered thin film protective layer 有权
标题翻译：多层薄膜保护层的结构
公开(公告)号：US06429921B1
公开(公告)日：2002-08-06
申请号：US09480062
申请日：2000-01-10
申请人： Wei-Shiau Chen , Kao-Su Huang
发明人： Wei-Shiau Chen , Kao-Su Huang
IPC分类号： G02F11339
CPC分类号： G02F1/133345 , G02F1/133553 , G02F1/13394 , G02F1/13454 , Y10S438/954 , Y10S438/958
摘要： A multi-layered thin film protective layer structure, which is applicable for a liquid crystal display with a substrate comprising a peripheral circuit area and a pixel cell area, is described. The pixel cell area and the peripheral circuit area comprise a plurality of pixel cells and metal layers, respectively. The multi-layered thin film protective layer also includes a protective layer in the peripheral circuit area to cover the metal layers and a plurality of pad spacers in the pixel cell area and the peripheral circuit area. The pad spacers are higher than the first protective layer. The structure also comprises a second protective layer in the pixel cell area to cover the pixel cells, wherein the second protective layer has a higher reflectivity to allow the transmission of light to reach the pixel cells and a reflection of light.
摘要翻译：描述了可应用于具有包括外围电路区域和像素单元区域的基板的液晶显示器的多层薄膜保护层结构。像素单元区域和外围电路区域分别包括多个像素单元和金属层。多层薄膜保护层还包括在外围电路区域中覆盖金属层的保护层和像素单元区域和外围电路区域中的多个衬垫间隔物。衬垫间隔物高于第一保护层。该结构还包括像素单元区域中的第二保护层以覆盖像素单元，其中第二保护层具有更高的反射率以允许光的透射以到达像素单元和反射光。

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