专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6150916A Architecture of poly fuses 有权
标题翻译：保险丝架构
公开(公告)号：US6150916A
公开(公告)日：2000-11-21
申请号：US149929
申请日：1998-09-09
申请人： Jy-Hwang Lin , Tsan-Wen Liu
发明人： Jy-Hwang Lin , Tsan-Wen Liu
IPC分类号： H01L23/525 , H01L27/108 , H01H37/36 , H01L27/10 , H01L27/115
CPC分类号： H01L23/5258 , H01L27/10897 , H01L2924/0002
摘要： An architecture of poly fuses includes a number of fuses, a dielectric layer, a sheet-like etching stop layer, and a passivation layer, wherein the sheet-like etching stop layer further includes a number of slices, and wherein each of the slices corresponds to one of the fuses underneath. The architecture of poly fuses according to the invention reduces the energy dispersion during the defective recovering process, and improves the recovery rate for defective memory cells.
摘要翻译：多熔丝的结构包括多个保险丝，电介质层，片状蚀刻停止层和钝化层，其中片状蚀刻停止层还包括多个片，并且其中每个片对应于到下面的保险丝之一。根据本发明的多熔丝的结构降低了在有缺陷的恢复过程中的能量分散，并提高了有缺陷的存储单元的恢复率。

2. 发明授权

US6165694A Method for preventing the formation of recesses in borophosphosilicate glass 失效
标题翻译：防止在硼磷硅酸盐玻璃中形成凹陷的方法
公开(公告)号：US6165694A
公开(公告)日：2000-12-26
申请号：US23235
申请日：1998-02-13
申请人： Tsan-Wen Liu
发明人： Tsan-Wen Liu
IPC分类号： H01L21/768 , G03F7/00
CPC分类号： H01L21/76802 , H01L21/76829
摘要： A method for preventing the formation of recesses in the surface of a borophosphosilicate glass layer comprising the step of first forming a borophosphosilicate glass layer over a substrate, then forming a silicon nitride film having a thickness of about 300.ANG. to 1000.ANG. over the borophosphosilicate glass layer. Next, contact windows are formed, followed by cleaning with an RCA solution. The silicon nitride film provides a protective function preventing the formation of recesses on the borophosphosilicate glass surface. Consequently, no short-circuiting metal bridges caused by metal in the recesses after the deposition of metallic conducting wires are formed.
摘要翻译：一种用于防止在硼磷硅酸盐玻璃层的表面形成凹陷的方法，包括首先在衬底上形成硼磷硅玻璃层，然后在硼磷硅玻璃上形成厚度约为300纳米至1000埃的氮化硅膜层。接下来，形成接触窗，然后用RCA溶液清洗。氮化硅膜提供了防止在硼磷硅酸盐玻璃表面上形成凹陷的保护功能。因此，在金属导线沉积之后，不会形成由金属在金属中产生的短路金属桥。

3. 发明授权

US06534415B2 Method of removing polymer residues after tungsten etch back 有权
标题翻译：钨蚀刻后去除聚合物残留物的方法
公开(公告)号：US06534415B2
公开(公告)日：2003-03-18
申请号：US09455006
申请日：1999-12-03
申请人： Hsueh-Wen Wang , Tsan-Wen Liu
发明人： Hsueh-Wen Wang , Tsan-Wen Liu
IPC分类号： H01L21302
CPC分类号： H01L21/02054 , H01L21/02046 , H01L21/31116 , H01L21/31138 , H01L21/76877
摘要： The invention describes a method for lowering particle count after tungsten etch back, in which method a plasma ashing step is performed after a brush cleaning step to eliminate polymer residues that remain on the metal barrier layer after tungsten etch back. Another tungsten etch back process is further performed to remove a tungsten oxide film that is formed by reacting the tungsten layer with an O2 gas used in the plasma ashing step.
摘要翻译：本发明描述了一种在钨回蚀后降低颗粒数的方法，其中在刷清洁步骤之后进行等离子体灰化步骤，以消除在钨回蚀后残留在金属阻挡层上的聚合物残留物。进一步进行另外的钨回蚀工艺以去除通过使钨层与在等离子体灰化步骤中使用的O 2气体反应而形成的氧化钨膜。

4. 发明授权

US06421108B1 Method for fabricating passivation layer 失效
标题翻译：钝化层制造方法
公开(公告)号：US06421108B1
公开(公告)日：2002-07-16
申请号：US09313516
申请日：1999-05-17
申请人： Wei-Shiau Chen , Shuenn-Jeng Chen , Tsan-Wen Liu
发明人： Wei-Shiau Chen , Shuenn-Jeng Chen , Tsan-Wen Liu
IPC分类号： G02F11333
CPC分类号： G02F1/133553 , G02F1/13439 , H01L21/76801
摘要： A method for fabricating a passivation layer and a liquid crystal display. For the fabrication method, a substrate is provided. An oxide layer, a first silicon nitride layer, a spin-on-glass (SOG) layer, and a second silicon nitride layer are sequentially formed over the substrate. The liquid crystal display has a controller, a dielectric layer, a metal layer, an oxide layer, a first silicon nitride layer, a spin-on-glass layer, and a second silicon nitride layer. The dielectric layer is positioned over the controller. A metal layer is positioned over the dielectric layer. An oxide layer is formed over the metal layer. A first silicon nitride layer is formed over the oxide layer. A spin-on-glass (SOG) layer is formed over the first silicon nitride layer. A second silicon nitride layer is formed over the SOG layer.
摘要翻译：一种制造钝化层和液晶显示器的方法。对于制造方法，提供基板。在衬底上顺序地形成氧化物层，第一氮化硅层，旋涂玻璃（SOG）层和第二氮化硅层。液晶显示器具有控制器，电介质层，金属层，氧化物层，第一氮化硅层，旋涂玻璃层和第二氮化硅层。电介质层位于控制器上方。金属层位于电介质层上。在金属层上形成氧化物层。在氧化物层上形成第一氮化硅层。在第一氮化硅层上形成旋涂玻璃（SOG）层。在SOG层上形成第二氮化硅层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式