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1. 发明申请

US20110182107A1 MEMRISTIVE DEVICE 有权
标题翻译：测量装置
公开(公告)号：US20110182107A1
公开(公告)日：2011-07-28
申请号：US13119932
申请日：2008-12-12
申请人： Wei Wu , John Paul Strachen , R. Stanely Williams , Marco Florentino , Shih-Yuan Wang , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
发明人： Wei Wu , John Paul Strachen , R. Stanely Williams , Marco Florentino , Shih-Yuan Wang , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device (200) includes a memristive matrix (240), mobile dopants (255) moving with the memristive matrix (240) in response to programming electrical fields and remaining stable within the memristive matrix (240) in the absence of the programming electrical fields; and at least three electrodes (210, 220, 230) surrounding the memristive matrix (240). A method for tuning electrical circuits with a memristive device (900) includes measuring a circuit characteristic (805) and applying a programming voltage to the memristive device (900) which causes motion of dopants within the memristive device (900) to alter the circuit characteristic (805). A method for increasing a switching speed of a memristive device (1300) includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions (1380, 1390) and then switching the memristive device (1300) to a conductive state by applying a programming voltage which rapidly merges the two conductive regions (1380, 1390) to form a conductive pathway between a source electrode (1310) and a drain electrode (1320).
摘要翻译：忆阻路由设备（200）包括忆阻矩阵（240），移动掺杂物（255）响应于编程电场而与忆阻矩阵（240）一起移动，并且在没有编程的情况下保持稳定在忆阻矩阵（240）内电场; 以及围绕所述忆阻矩阵（240）的至少三个电极（210,220,230）。一种利用忆阻器件（900）来调谐电路的方法包括测量电路特性（805）并将编程电压施加到忆阻器件（900），其使得忆阻器件（900）内的掺杂剂的运动改变电路特性（805）。提高忆阻装置（1300）的切换速度的方法包括将来自两个几何分离的位置的掺杂剂绘制成紧邻形成两个导电区域（1380,1390），然后通过应用将所述忆阻装置（1300）切换到导电状态编程电压，其迅速地合并两个导电区域（1380,1390）以在源电极（1310）和漏电极（1320）之间形成导电通路。

2. 发明授权

US08547727B2 Memristive device 有权
标题翻译：忆阻器
公开(公告)号：US08547727B2
公开(公告)日：2013-10-01
申请号：US13119932
申请日：2008-12-12
申请人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
发明人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
IPC分类号： G11C11/00
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device includes a memristive matrix, mobile dopants moving with the memristive matrix in response to programming electrical fields and remaining stable within the memristive matrix in the absence of the programming electrical fields; and at least three electrodes surrounding the memristive matrix. A method for tuning electrical circuits with a memristive device includes measuring a circuit characteristic and applying a programming voltage to the memristive device which causes motion of dopants within the memristive device to alter the circuit characteristic. A method for increasing a switching speed of a memristive device includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions and then switching the memristive device to a conductive state by applying a programming voltage which rapidly merges the two conductive regions to form a conductive pathway between a source electrode and a drain electrode.
摘要翻译：忆阻路由设备包括忆阻矩阵，响应于编程电场而与忆阻矩阵一起移动的移动掺杂物，并且在没有编程电场的情况下在忆阻矩阵内保持稳定; 以及围绕忆阻矩阵的至少三个电极。一种用忆阻器件调谐电路的方法包括测量电路特性并将编程电压施加到忆阻器件，其使得忆阻器件内的掺杂剂的运动改变电路特性。用于增加忆阻器件的切换速度的方法包括将来自两个几何分离位置的掺杂剂绘制成紧密接近形成两个导电区域，然后通过施加快速合并两个导电区域的编程电压将忆阻器件切换到导通状态在源电极和漏电极之间形成导电路径。

3. 发明申请

US20110303890A1 Electrically Actuated Device 有权
标题翻译：电动执行装置
公开(公告)号：US20110303890A1
公开(公告)日：2011-12-15
申请号：US13142504
申请日：2011-06-28
申请人： Matthew D. Pickett , Hans S. Cho , Julien Borghetti , Duncan Stewart
发明人： Matthew D. Pickett , Hans S. Cho , Julien Borghetti , Duncan Stewart
IPC分类号： H01L45/00 , H01L21/62
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/165
摘要： An electrically actuated device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle, thereby forming a junction therebetween. A material is established on the first electrode and at the junction. At least a portion of the material is a matrix region. A current conduction channel extends substantially vertically between the first and second electrodes, and is defined in at least a portion of the material positioned at the junction. The current conduction channel has a controlled profile of dopants therein.
摘要翻译：电驱动装置包括第一电极和第二电极，其以非零角度与第一电极交叉，从而在它们之间形成接合部。在第一电极和接合处建立材料。材料的至少一部分是矩阵区域。电流传导通道在第一和第二电极之间基本垂直地延伸，并且限定在位于结处的材料的至少一部分中。电流传导通道在其中具有受控的掺杂剂分布。

4. 发明授权

US08502188B2 Electrically actuated device 有权
标题翻译：电动装置
公开(公告)号：US08502188B2
公开(公告)日：2013-08-06
申请号：US13142504
申请日：2011-06-28
申请人： Matthew D. Pickett , Hans S. Cho , Julien Borghetti , Duncan Stewart
发明人： Matthew D. Pickett , Hans S. Cho , Julien Borghetti , Duncan Stewart
IPC分类号： H01L29/02
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/165
摘要： An electrically actuated device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle, thereby forming a junction therebetween. A material is established on the first electrode and at the junction. At least a portion of the material is a matrix region. A current conduction channel extends substantially vertically between the first and second electrodes, and is defined in at least a portion of the material positioned at the junction. The current conduction channel has a controlled profile of dopants therein.
摘要翻译：电驱动装置包括第一电极和第二电极，其以非零角度与第一电极交叉，从而在它们之间形成接合部。在第一电极和接合处建立材料。材料的至少一部分是矩阵区域。电流传导通道在第一和第二电极之间基本垂直地延伸，并且限定在位于结处的材料的至少一部分中。电流传导通道在其中具有受控的掺杂剂分布。

5. 发明授权

US08451644B2 Non-volatile sampler 有权
标题翻译：非易失性采样器
公开(公告)号：US08451644B2
公开(公告)日：2013-05-28
申请号：US12825607
申请日：2010-06-29
申请人： Julien Borghetti , David A. Fattal , John Paul Strachan
发明人： Julien Borghetti , David A. Fattal , John Paul Strachan
IPC分类号： G11C11/00 , H01L21/82
CPC分类号： H01L27/101 , G11C5/063 , G11C13/0007 , G11C27/02
摘要： A non-volatile sampler including a row line for receiving an input signal to be sampled, the row line intersecting a number of column lines, non-volatile storage elements being disposed at intersections between the row line and the column lines; a bias voltage source connected to the column lines, the bias voltage source for selectively applying a bias voltage to at least one of the non-volatile storage elements to cause the at least one of the storage elements to store a sample of the input signal at the instance the bias voltage is applied.
摘要翻译：一种非易失性采样器，包括用于接收待采样的输入信号的行线，与多条列线相交的行线，非易失性存储元件设置在行线和列线之间的交点处; 连接到列线的偏置电压源，偏置电压源，用于选择性地将偏置电压施加到至少一个非易失性存储元件，以使存储元件中的至少一个将输入信号的采样存储在施加偏置电压的情况。

6. 发明申请

US20120146184A1 TWO TERMINAL MEMCAPACITOR DEVICE 有权
标题翻译：两端终端设备
公开(公告)号：US20120146184A1
公开(公告)日：2012-06-14
申请号：US13383981
申请日：2009-08-28
申请人： Matthew Pickett , Julien Borghetti , Jianhua Yang
发明人： Matthew Pickett , Julien Borghetti , Jianhua Yang
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： G11C11/24 , H01G7/06 , H01L27/101 , H01L28/40 , H01L29/167 , H01L29/93
摘要： A memcapacitor device includes a memcapacitive matrix interposed between a first electrode and a second electrode. The memcapacitive matrix includes deep level dopants having a first decay time constant and shallow level dopants having a second decay time constant. The second decay time constant is substantially shorter than the first decay time constant. The capacitance of the memcapacitor device depends upon an initial voltage applied across the memcapacitive matrix and a time dependent change in capacitance of the memcapacitor device depends upon the first decay time constant. A method for forming a memcapacitive device is also provided.
摘要翻译：电容器装置包括插入在第一电极和第二电极之间的存储电容矩阵。电容矩阵包括具有第一衰减时间常数的深层掺杂剂和具有第二衰减时间常数的浅层掺杂剂。第二衰减时间常数明显短于第一衰减时间常数。存储器件器件的电容取决于施加在存储电容矩阵上的初始电压，并且存储器件器件的时间相关的电容变化取决于第一衰减时间常数。还提供了一种用于形成电容器件的方法。

7. 发明申请

US20110317469A1 NON-VOLATILE SAMPLER 有权
标题翻译：非挥发性取样器
公开(公告)号：US20110317469A1
公开(公告)日：2011-12-29
申请号：US12825607
申请日：2010-06-29
申请人： Julien Borghetti , David A. Fattal , John Paul Strachan
发明人： Julien Borghetti , David A. Fattal , John Paul Strachan
IPC分类号： G11C11/00 , H01L21/82
CPC分类号： H01L27/101 , G11C5/063 , G11C13/0007 , G11C27/02
摘要： A non-volatile sampler including a row line for receiving an input signal to be sampled, the row line intersecting a number of column lines, non-volatile storage elements being disposed at intersections between the row line and the column lines; a bias voltage source connected to the column lines, the bias voltage source for selectively applying a bias voltage to at least one of the non-volatile storage elements to cause the at least one of the storage elements to store a sample of the input signal at the instance the bias voltage is applied.
摘要翻译：一种非易失性采样器，包括用于接收待采样的输入信号的行线，与多条列线相交的行线，非易失性存储元件设置在行线和列线之间的交点处; 连接到列线的偏置电压源，偏置电压源，用于选择性地将偏置电压施加到至少一个非易失性存储元件，以使存储元件中的至少一个将输入信号的采样存储在施加偏置电压的情况。

8. 发明申请

US20110279135A1 MEMRISTOR ADJUSTMENT USING STORED CHARGE 审中-公开
标题翻译：使用存储充电器进行调整
公开(公告)号：US20110279135A1
公开(公告)日：2011-11-17
申请号：US12781441
申请日：2010-05-17
申请人： Julien Borghetti , Bilberto Medeiros Ribeiro , Dmitri Borisovich Strukov
发明人： Julien Borghetti , Bilberto Medeiros Ribeiro , Dmitri Borisovich Strukov
IPC分类号： G01R27/08
CPC分类号： G01R31/2637 , G11C13/0002 , G11C13/0007 , G11C13/0038 , G11C13/0064 , G11C13/0069 , G11C2013/0066
摘要： Methods and apparatus pertaining to memory resistors are provided. Electronic circuitry determines energy for changing a non-volatile resistance of a memristor from a present value to a target value. An electric charge corresponding to the energy is stored. An electric pulse is applied to the memristor using the stored charge. The newly adjusted resistance of the memristor is sensed and compared to the target value. Additional electric pulses can be applied in accordance with the comparison. Memristor adjustment by way of feedback control is thus contemplated by the present teachings.
摘要翻译：提供了与存储电阻有关的方法和装置。电子电路确定用于将忆阻器的非易失性电阻从当前值改变为目标值的能量。存储对应于能量的电荷。使用存储的电荷将电脉冲施加到忆阻器。忆阻器的新调节电阻被感测并与目标值进行比较。根据比较可以应用额外的电脉冲。因此通过反馈控制进行的忆阻器调节由本教导设想。

9. 发明授权

US09793275B2 Multilayer circuit 有权
公开(公告)号：US09793275B2
公开(公告)日：2017-10-17
申请号：US13259177
申请日：2009-08-14
申请人： Dmitri Borisovich Strukov , Julien Borghetti
发明人： Dmitri Borisovich Strukov , Julien Borghetti
IPC分类号： H01L23/48 , H01L29/792 , H01L23/52 , H01L21/44 , H01L27/105 , H01L27/06 , H01L27/10 , H01L27/112 , H01L27/24
CPC分类号： H01L27/105 , H01L27/0688 , H01L27/101 , H01L27/112 , H01L27/11286 , H01L27/24
摘要： A multilayer circuit (400) includes a base layer (205) which has a number of base vias (247, 415), a first overlying layer (215) formed on the base layer (205) and having a first routing section (210) and a second overlying layer (220) formed on the first overlying layer (215). The second overlying layer (220) has a second routing section (210) and is formed using the same set of masks. The first routing section (210) and the second routing section (210) form a unique electrical pathway (248) between a base via (247) and an element in an overlying layer. A method for forming a multilayer circuit is also provided.

10. 发明授权

US08431921B2 Memristor having a triangular shaped electrode 有权
标题翻译：忆阻器具有三角形电极
公开(公告)号：US08431921B2
公开(公告)日：2013-04-30
申请号：US13130827
申请日：2009-01-13
申请人： Matthew D. Pickett , Julien Borghetti
发明人： Matthew D. Pickett , Julien Borghetti
IPC分类号： H01L29/02
CPC分类号： H01L45/08 , H01L27/2472 , H01L45/1233 , H01L45/1273 , H01L45/146
摘要： A memristor includes a first electrode having a triangular cross section, in which the first electrode has a tip and a base, a switching material positioned upon the first electrode, and a second electrode positioned upon the switching material. The tip of the first electrode faces the second electrode and an active region in the switching material is formed between the tip of the first electrode and the second electrode.
摘要翻译：忆阻器包括具有三角形横截面的第一电极，其中第一电极具有尖端和基部，位于第一电极上的开关材料和位于开关材料上的第二电极。第一电极的尖端面对第二电极，并且开关材料中的有源区形成在第一电极的尖端和第二电极之间。

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