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1. 发明授权

US5427625A Method for cleaning heat treatment processing apparatus 失效
标题翻译：清洗热处理装置的方法
公开(公告)号：US5427625A
公开(公告)日：1995-06-27
申请号：US163799
申请日：1993-12-09
申请人： Wataru Okase , Masaaki Hasei
发明人： Wataru Okase , Masaaki Hasei
IPC分类号： C23C16/44 , B08B5/04
CPC分类号： C23C16/4408 , C23C16/4401 , C23C16/4412
摘要： While the interior of a reaction vessel is being deaerated by a first vacuum pump, an inert gas is supplied from an upstream side (reaction gas bottle side) of a flow rate control unit (MFC) to a reaction gas supply pipe. Thus, a reaction gas is substituted with the inert gas. A passageway downstream of the MFC is closed and the interior of the pipe is deaerated from the upstream side through a bypass pipe so that a predetermined degree of vacuum is obtained. Thus, the gas substituting efficiency can be improved. The interior of the reaction vessel and the interior of the reaction gas supply pipe are quickly deaerated without an influence of resistance of the MFC. The inert gas substitution process and the deaerating process are repeated for 10 cycles or more.
摘要翻译：当反应容器的内部被第一真空泵脱气时，从流量控制单元（MFC）的上游侧（反应气瓶侧）向反应气体供给管供给惰性气体。因此，反应气体被惰性气体代替。 MFC下游的通道封闭，并且管道内部从上游侧通过旁通管脱气，从而获得预定的真空度。因此，可以提高气体替代效率。反应容器的内部和反应气体供给管的内部不受MFC的电阻的影响而快速脱气。惰性气体置换过程和脱气过程重复10个循环或更多次。

2. 发明授权

US06228173B1 Single-substrate-heat-treating apparatus for semiconductor process system 失效
标题翻译：用于半导体工艺系统的单基板热处理装置
公开(公告)号：US06228173B1
公开(公告)日：2001-05-08
申请号：US09410024
申请日：1999-10-01
申请人： Wataru Okase , Masaaki Hasei
发明人： Wataru Okase , Masaaki Hasei
IPC分类号： C23C16455
CPC分类号： C23C14/083 , C23C16/56
摘要： A heat-treating apparatus is arranged to perform a reforming process and a crystallizing process for tantalum oxide deposited on a semiconductor wafer. The apparatus includes a worktable with a heater incorporated therein. Under the worktable, there is a heat-compensating member formed of a thin plate and having a counter surface facing the bottom surface of the worktable along the periphery. The counter surface is formed of a mirror surface having a surface roughness of Rmax=25 &mgr;m or less. Heat rays and radiant heat are reflected by the counter surface and applied to the periphery of the worktable, thereby compensating the periphery for heat loss.
摘要翻译：热处理装置被布置成对沉积在半导体晶片上的氧化钽进行重整处理和结晶处理。该装置包括其中结合有加热器的工作台。在工作台下方有一个由薄板形成的热补偿部件，其沿着周边具有面向工作台的底面的相对表面。反面由Rmax =25μm或更小的表面粗糙度的镜面形成。热射线和辐射热被相对表面反射并施加到工作台的周边，从而补偿周边的热损失。

3. 发明授权

US06399922B2 Single-substrate-heat-treating apparatus for semiconductor process system 失效
标题翻译：用于半导体工艺系统的单基板热处理装置
公开(公告)号：US06399922B2
公开(公告)日：2002-06-04
申请号：US09777875
申请日：2001-02-07
申请人： Wataru Okase , Masaaki Hasei
发明人： Wataru Okase , Masaaki Hasei
IPC分类号： F27D1102
CPC分类号： C23C14/083 , C23C16/56
摘要： A heat-treating apparatus is arranged to perform a reforming process and a crystallizing process for tantalum oxide deposited on a semiconductor wafer. The apparatus includes a worktable with a heater incorporated therein. Under the worktable, there is a heat-compensating member formed of a thin plate and having a counter surface facing the bottom surface of the worktable along the periphery. The counter surface is formed of a mirror surface having a surface roughness of Rmax=25 &mgr;m or less. Heat rays and radiant heat are reflected by the counter surface and applied to the periphery of the worktable, thereby compensating the periphery for heat loss.
摘要翻译：热处理装置被布置成对沉积在半导体晶片上的氧化钽进行重整处理和结晶处理。该装置包括其中结合有加热器的工作台。在工作台下方有一个由薄板形成的热补偿部件，其沿着周边具有面向工作台的底面的相对表面。反面由Rmax =25μm或更小的表面粗糙度的镜面形成。热射线和辐射热被相对表面反射并施加到工作台的周边，从而补偿周边的热损失。

4. 发明授权

US5554226A Heat treatment processing apparatus and cleaning method thereof 失效
标题翻译：热处理装置及其清洗方法
公开(公告)号：US5554226A
公开(公告)日：1996-09-10
申请号：US411899
申请日：1995-03-28
申请人： Wataru Okase , Masaaki Hasei
发明人： Wataru Okase , Masaaki Hasei
IPC分类号： C23C16/44 , C23C16/00
CPC分类号： C23C16/4408 , C23C16/4401 , C23C16/4412
摘要： While the interior of a reaction vessel is being deaerated by a first vacuum pump, an inert gas is supplied from an upstream side (reaction gas bottle side) of a flow rate control unit (MFC) to a reaction gas supply pipe. Thus, a reaction gas is substituted with the inert gas. A passageway downstream of the MFC is closed and the interior of the pipe is deaerated from the upstream side through a bypass pipe so that a predetermined degree of vacuum is obtained. Thus, the gas substituting efficiency can be improved. The interior of the reaction vessel and the interior of the reaction gas supply pipe are quickly deaerated without an influence of resistance of the MFC. The inert gas substitution process and the deaerating process are repeated for 10 cycles or more.
摘要翻译：当反应容器的内部被第一真空泵脱气时，从流量控制单元（MFC）的上游侧（反应气瓶侧）向反应气体供给管供给惰性气体。因此，反应气体被惰性气体代替。 MFC下游的通道封闭，并且管道内部从上游侧通过旁通管脱气，从而获得预定的真空度。因此，可以提高气体替代效率。反应容器的内部和反应气体供给管的内部不受MFC的电阻的影响而快速脱气。惰性气体置换过程和脱气过程重复10个循环或更多次。

5. 发明授权

US08210022B2 Pressure type flow rate control reference and corrosion resistant pressure type flow rate controller used for the same 有权
标题翻译：压力式流量控制参考和耐腐蚀压力式流量控制器用于相同
公开(公告)号：US08210022B2
公开(公告)日：2012-07-03
申请号：US12332897
申请日：2008-12-11
申请人： Shuji Moriya , Wataru Okase , Tsutomu Shinohara , Nobukazu Ikeda , Michio Yamaji , Yasutaka Hayashi , Toshihide Yoshida , Yasuyuki Omata
发明人： Shuji Moriya , Wataru Okase , Tsutomu Shinohara , Nobukazu Ikeda , Michio Yamaji , Yasutaka Hayashi , Toshihide Yoshida , Yasuyuki Omata
IPC分类号： G01F25/00 , G05D7/06
CPC分类号： G05D7/0635 , Y10T137/2708 , Y10T137/776 , Y10T137/7761 , Y10T137/7793
摘要： A pressure type flow rate control reference allows the performance of flow rate calibrations of a flow rate controller on all types of gases, including corrosive gases, at low costs, and also has excellent flow rate control accuracy. The pressure type flow rate control reference includes a pressure controller for adjusting the pressure of a calibration gas from a calibration gas supply source, a first volume provided on the downstream side of a pressure controller, a first connection mouth of an uncalibrated flow rate controller provided on the downstream side of the first volume, a reference pressure type flow rate controller connected to a second connection mouth on the downstream side of the uncalibrated flow rate controller, a second volume provided on the downstream side of a reference pressure type flow rate controller, and an evacuation device provided on the downstream side of the second volume.
摘要翻译：压力式流量控制参考允许以低成本执行流量控制器对所有类型气体（包括腐蚀性气体）的流量校准，并且还具有优异的流量控制精度。压力型流量控制基准包括用于调节来自校准气体供给源的校准气体的压力的压力控制器，设置在压力控制器的下游侧的第一容积，未校准的流量控制器的第一连接口，在第一容积的下游侧具有与未校准流量控制器的下游侧的第二连接口连接的基准压力型流量控制器，设置在基准压力型流量控制器的下游侧的第二容积，以及设置在第二容积的下游侧的抽空装置。

6. 发明授权

US06641709B2 Mist trap mechanism and method for plating apparatus 失效
标题翻译：电镀设备的雾化捕集机理及方法
公开(公告)号：US06641709B2
公开(公告)日：2003-11-04
申请号：US10290293
申请日：2002-11-08
申请人： Wataru Okase , Koichiro Kimura , Takenobu Matsuo
发明人： Wataru Okase , Koichiro Kimura , Takenobu Matsuo
IPC分类号： C25D1700
CPC分类号： C25D21/04 , C25D17/001
摘要： A mist trap mechanism and method for a plating apparatus, which can provide an improved mist removing effect by a simple structure, are provided. A gas discharge passage is formed to connect the space in a plating chamber and space outside of the plating chamber and provided with a liquid spouting portion and a solid wall. The discharge gas collides with the liquid spouted from the liquid spouting portion, and the discharge gas collides with the solid wall which has its surface wetted with the liquid spouted from the liquid spouting portion. Such a two-staged collision of the discharge gas effectively takes the mist contained in the discharge gas into the liquid. A liquid recovery portion is disposed in connection with the gas discharge passage to collectively catch the mist in a state captured by the liquid.
摘要翻译：提供一种能够通过简单的结构提供改善的除雾效果的电镀装置的雾滴捕获机构和方法。形成气体排出通道，以连接电镀室中的空间和电镀室外的空间，并设置有液体喷射部分和固体壁。排出气体与从液体喷出部喷出的液体相撞，排出气体与表面被从液体喷出部喷出的液体润湿的固体壁碰撞。这种放电气体的两阶段碰撞有效地将放出气体中所含的雾气引入液体。液体回收部分与气体排出通道相连配置，以在由液体俘获的状态下集中地吸收雾气。

7. 发明授权

US06634370B2 Liquid treatment system and liquid treatment method 失效
标题翻译：液体处理系统和液体处理方法
公开(公告)号：US06634370B2
公开(公告)日：2003-10-21
申请号：US09849276
申请日：2001-05-07
申请人： Satoshi Nakashima , Wataru Okase , Takenobu Matsuo , Tameyasu Hyakuzuka , Yasushi Yagi , Yoshiyuki Harima , Jun Yamauchi , Hiroki Taniyama , Kyungho Park , Yoshitsugu Tanaka , Yoshinori Kato , Hiroshi Sato
发明人： Satoshi Nakashima , Wataru Okase , Takenobu Matsuo , Tameyasu Hyakuzuka , Yasushi Yagi , Yoshiyuki Harima , Jun Yamauchi , Hiroki Taniyama , Kyungho Park , Yoshitsugu Tanaka , Yoshinori Kato , Hiroshi Sato
IPC分类号： B08B300
CPC分类号： H01L21/67167 , C25D7/123 , C25D17/001 , H01L21/67178 , H01L21/6723 , H01L21/68707
摘要： Liquid treatment units are disposed in multi-tiers surrounding a main-arm 35. Among liquid treatment units, plating units M1 through M4 are disposed on a lower tier side, and a unit for post-treatment process such as a cleaning unit 70 where a cleaner atmosphere is necessary is disposed on an upper tier side. Thereby, an improvement in an area efficiency and the formation and maintenance of a clean atmosphere can be simultaneously obtained.
摘要翻译：液体处理单元设置在主臂35周围的多层中。在液体处理单元中，电镀单元M1至M4设置在下层侧，以及用于后处理处理的单元，例如清洁单元70，其中更清洁的气氛被设置在上层侧。由此，可以同时获得面积效率的提高，清洁气氛的形成和维护。

8. 发明授权

US5662469A Heat treatment method 失效
标题翻译：热处理方法
公开(公告)号：US5662469A
公开(公告)日：1997-09-02
申请号：US410538
申请日：1995-03-24
申请人： Wataru Okase , Yasushi Yagi , Satoshi Kawachi
发明人： Wataru Okase , Yasushi Yagi , Satoshi Kawachi
IPC分类号： C23C16/458 , C23C16/46 , C23C16/48 , C30B25/10 , C30B25/12 , C30B31/12 , C30B31/14 , H01L21/00 , H01L21/205 , H01L21/314 , F27D5/00 , F27D3/12
CPC分类号： C23C16/463 , C23C16/4583 , C23C16/46 , C23C16/481 , C30B25/10 , C30B25/12 , C30B31/12 , C30B31/14 , H01L21/67109
摘要： The present invention relates to a thermal processing method wherein a cylindrical process tube that has at one end an entrance/exit is provided at the other end thereof with a heat source, and thermal processing is performed on a workpiece which has been brought in from the entrance/exit of the process tube to a prescribed position therein. This thermal processing method and an apparatus therefor is characterized in that, when the workpiece is moved to the prescribed position, it is first moved to a proximity position that is closer to the heat source than the prescribed position, then it is returned therefrom to the prescribed position. The invention is further characterized in that, if the actual processing temperature at the prescribed position changes while the workpiece is undergoing thermal processing, the workpiece is moved such that the position of the workpiece with respect to the heat generation source is changed in order to return the processing temperature at the prescribed position, to the prescribed processing temperature. This ensures that the temperature of the workpiece can be rapidly raised to the prescribed processing temperature and also that, if the temperature of the workpiece should change, it can be rapidly returned to the prescribed processing temperature.
摘要翻译：本发明涉及一种热处理方法，其中在一端具有入口/出口的圆柱形处理管在其另一端设置有热源，并且对从已经从处理管的入口/出口到其中的规定位置。该热处理方法及其装置的特征在于，当工件移动到规定位置时，首先将其移动到比规定位置更靠近热源的接近位置，然后从其返回到规定的位置。本发明的特征还在于，如果在工件进行热加工时在规定位置处的实际加工温度变化，则工件被移动，使得工件相对于发热源的位置改变以返回处理温度在规定的位置，达到规定的加工温度。这样可以确保工件的温度快速提高到规定的加工温度，而且如果工件的温度变化，则可以迅速地恢复到规定的加工温度。

9. 发明申请

US20100096031A1 FLUID CONTROL APPARATUS 有权
标题翻译：流体控制装置
公开(公告)号：US20100096031A1
公开(公告)日：2010-04-22
申请号：US12451649
申请日：2008-05-26
申请人： Wataru Okase , Shuji Moriya , Tomohiro Nakata , Tsutomu Shinohara , Michio Yamaji
发明人： Wataru Okase , Shuji Moriya , Tomohiro Nakata , Tsutomu Shinohara , Michio Yamaji
IPC分类号： G05D7/00 , F16K27/00 , F17D1/04
CPC分类号： F16K27/003 , Y10T137/598 , Y10T137/87885 , Y10T137/87917
摘要： There is provided a fluid control apparatus which can reduce the number of members and can improve the assembling operation efficiency.A pressure indication device 4 to be replaced with a relatively-higher frequency is coupled to a base block 5 existing thereunder through male screw members 17 from above. An on-off valve 6 to be replaced with a relatively-lower frequency has, at its lower portion, a block-shaped main body 6a formed integrally therewith. The main body 6a of the on-off valve 6 is coupled to the base block 5 through male screw members 18 in the forward and rearward directions.
摘要翻译：提供了一种流体控制装置，其可以减少构件的数量并且可以提高组装操作效率。用相对较高频率代替的压力指示装置4通过外螺纹构件17从上方联接到存在于其下的基座5。以相对较低频率代替的开关阀6在其下部具有与其一体形成的块状主体6a。开关阀6的主体6a通过阳螺纹构件18沿前后方向联接到基座5。

10. 发明授权

US06740164B2 Plating apparatus and method of manufacturing semiconductor device 失效
标题翻译：电镀装置及制造半导体装置的方法
公开(公告)号：US06740164B2
公开(公告)日：2004-05-25
申请号：US10058290
申请日：2002-01-30
申请人： Wataru Okase , Takenobu Matsuo
发明人： Wataru Okase , Takenobu Matsuo
IPC分类号： H01L2144
CPC分类号： H01L21/2885 , C25D7/12 , C25D17/001
摘要： Plating apparatus and plating method that can plate more uniformly on a processing surface of a workpiece are provided. The plating apparatus is comprised of a plating solution bathe which is provided with a first electrode held in a state soaked in a plating solution; a workpiece holding mechanism which holds a workpiece to contact its processing surface to the plating solution; and a contact member, disposed in the workpiece holding mechanism, that electrically contacts with the circumferential edge of the workpiece so to form a conductive layer on the workpiece surface as a second electrode. The contact member is divided along the circumferential direction of the workpiece with which they are electrically contacted. Thus, even if the contact resistance between each section of the contact member with the workpiece is variable, it is possible to adjust the plating electric current for each section of the contact member.
摘要翻译：提供了可以在工件的加工表面上更均匀地平板化的电镀装置和电镀方法。电镀装置由电镀液沐浴组成，电镀液包含浸渍在电镀液中的状态的第一电极; 工件保持机构，其保持工件以将其处理表面接触到电镀液; 以及设置在所述工件保持机构中的与所述工件的周向边缘电接触以在所述工件表面上形成作为第二电极的导电层的接触构件。接触构件沿着与它们电接触的工件的圆周方向分开。因此，即使接触构件与工件的每个部分之间的接触电阻是可变的，也可以调节接触构件的每个部分的电镀电流。

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