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1. 发明授权

US08320166B2 Magnetic random access memory and method of reading data from the same 有权
标题翻译：磁性随机存取存储器和从其读取数据的方法
公开(公告)号：US08320166B2
公开(公告)日：2012-11-27
申请号：US12230855
申请日：2008-09-05
申请人： Wan-jun Park , Tae-wan Kim , Sang-jin Park , Dae-jeong Kim , Seung-jun Lee , Hyung-soon Shin
发明人： Wan-jun Park , Tae-wan Kim , Sang-jin Park , Dae-jeong Kim , Seung-jun Lee , Hyung-soon Shin
IPC分类号： G11C11/14 , G11C11/15 , G11C7/14
CPC分类号： G11C7/14 , G11C7/062 , G11C11/1659 , G11C11/1673
摘要： A magnetic random access memory (MRAM) includes a memory cell having a first transistor and a first magnetic tunneling junction (MTJ) layer, and a reference cell operable as a basis when reading data stored in the memory cell, the reference cell including second and third MTJ layers arranged in parallel to each other, and a second transistor connected in series to each of the second and third MTJ layers, the second transistor having a driving capability corresponding to twice a driving capability of the first transistor of the memory cell.
摘要翻译：磁性随机存取存储器（MRAM）包括具有第一晶体管和第一磁性隧道结（MTJ）层的存储单元，以及参考单元，可以在读取存储在存储单元中的数据时作为基础，参考单元包括第二和第三MTJ层彼此平行排列，以及与第二和第三MTJ层中的每一个串联连接的第二晶体管，第二晶体管具有对应于存储单元的第一晶体管的驱动能力的两倍的驱动能力。

2. 发明申请

US20090067233A1 Magnetic random access memory and method of reading data from the same 有权
标题翻译：磁性随机存取存储器和从其读取数据的方法
公开(公告)号：US20090067233A1
公开(公告)日：2009-03-12
申请号：US12230855
申请日：2008-09-05
申请人： Wan-jun Park , Tae-wan Kim , Sang-jin Park , Dae-jeong Kim , Seung-jun Lee , Hyung-soon Shin
发明人： Wan-jun Park , Tae-wan Kim , Sang-jin Park , Dae-jeong Kim , Seung-jun Lee , Hyung-soon Shin
IPC分类号： G11C11/14 , G11C7/14 , G11C11/409
CPC分类号： G11C7/14 , G11C7/062 , G11C11/1659 , G11C11/1673
摘要： A magnetic random access memory (MRAM) includes a memory cell having a first transistor and a first magnetic tunneling junction (MTJ) layer, and a reference cell operable as a basis when reading data stored in the memory cell, the reference cell including second and third MTJ layers arranged in parallel to each other, and a second transistor connected in series to each of the second and third MTJ layers, the second transistor having a driving capability corresponding to twice a driving capability of the first transistor of the memory cell.
摘要翻译：磁性随机存取存储器（MRAM）包括具有第一晶体管和第一磁性隧道结（MTJ）层的存储单元，以及参考单元，可以在读取存储在存储单元中的数据时作为基础，参考单元包括第二和第三MTJ层彼此平行排列，以及与第二和第三MTJ层中的每一个串联连接的第二晶体管，第二晶体管具有对应于存储单元的第一晶体管的驱动能力的两倍的驱动能力。

3. 发明申请

US20050180205A1 Magnetic random access memory and method of reading data from the same 审中-公开
标题翻译：磁性随机存取存储器和从其读取数据的方法
公开(公告)号：US20050180205A1
公开(公告)日：2005-08-18
申请号：US11025841
申请日：2004-12-30
申请人： Wan-jun Park , Tae-wan Kim , Sang-jin Park , Dae-jeong Kim , Seung-jun Lee , Hyung-soon Shin
发明人： Wan-jun Park , Tae-wan Kim , Sang-jin Park , Dae-jeong Kim , Seung-jun Lee , Hyung-soon Shin
IPC分类号： G11C11/15 , G11C7/06 , G11C7/14 , G11C11/16 , G11C11/14
CPC分类号： G11C7/14 , G11C7/062 , G11C11/1659 , G11C11/1673
摘要： In a magnetic random access memory (MRAM), and a method of reading data from the same, the MRAM includes a memory cell having one transistor and one magnetic tunneling junction (MTJ) layer, and a reference cell that is operable for use as a basis when reading data stored in the memory cell, wherein the reference cell includes first and second MTJ layers provided in parallel to each other, and first and second transistors provided in parallel to each other, the first and second transistors being respectively connected in series to the first and second MTJ layers. Alternatively, one transistor having a driving capability corresponding to twice a driving capability of the transistor of the memory cell may be substituted for the first and second transistors of the reference cell.
摘要翻译：在磁性随机存取存储器（MRAM）中，以及从其读取数据的方法，MRAM包括具有一个晶体管和一个磁性隧道结（MTJ）层的存储单元，以及可操作用作读取存储在存储单元中的数据的基础，其中参考单元包括彼此并联设置的第一和第二MTJ层，以及彼此并联设置的第一和第二晶体管，第一和第二晶体管分别串联连接到第一和第二MTJ层。或者，具有对应于存储器单元的晶体管的驱动能力的两倍的驱动能力的一个晶体管可以代替参考单元的第一和第二晶体管。

4. 发明授权

US07195929B2 MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJs) and method for fabricating the same 有权
标题翻译：包括由一个晶体管和两个磁性隧道结（MTJ）形成的晶胞的MRAM及其制造方法
公开(公告)号：US07195929B2
公开(公告)日：2007-03-27
申请号：US11152346
申请日：2005-06-15
申请人： Wan-jun Park , Hyung-soon Shin , Seung-jun Lee
发明人： Wan-jun Park , Hyung-soon Shin , Seung-jun Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , G11C15/02
摘要： In an MRAM and method for fabricating the same, the MRAM includes a semiconductor substrate, a transistor formed on the semiconductor substrate, an interlayer dielectric formed on the semiconductor substrate to cover the transistor, and first and second MTJ cells formed in the interlayer dielectric to be coupled in parallel with a drain region of the transistor, wherein the first MTJ cell is coupled to a first bit line formed in the interlayer dielectric and the second MTJ cell is coupled to a second bit line formed in the interlayer dielectric, and wherein a data line is formed between the first MTJ cell and a gate electrode of the transistor to be perpendicular to the first bit line and the second bit line. The MRAM provides high integration density, sufficient sensing margin, high-speed operation and reduced noise, requires reduced current for recording data and eliminates a voltage offset.
摘要翻译：在MRAM及其制造方法中，MRAM包括半导体衬底，形成在半导体衬底上的晶体管，形成在半导体衬底上以覆盖晶体管的层间电介质，以及形成在层间电介质中的第一和第二MTJ单元，与晶体管的漏极区域并联耦合，其中第一MTJ单元耦合到形成在层间电介质中的第一位线，并且第二MTJ单元耦合到形成在层间电介质中的第二位线，并且其中在第一MTJ单元和晶体管的栅电极之间形成垂直于第一位线和第二位线的数据线。 MRAM提供高集成密度，足够的感测余量，高速操作和降低噪声，需要减少记录数据的电流并消除电压偏移。

5. 发明授权

US06924520B2 MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJS) and method for fabricating the same 有权
标题翻译： MRAM包括由一个晶体管和两个磁性隧道结（MTJS）形成的晶胞及其制造方法
公开(公告)号：US06924520B2
公开(公告)日：2005-08-02
申请号：US10759544
申请日：2004-01-20
申请人： Wan-jun Park , Hyung-soon Shin , Seung-jun Lee
发明人： Wan-jun Park , Hyung-soon Shin , Seung-jun Lee
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08 , H01L29/76
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , G11C15/02
摘要： In an MRAM and method for fabricating the same, the MRAM includes a semiconductor substrate, a transistor formed on the semiconductor substrate, an interlayer dielectric formed on the semiconductor substrate to cover the transistor, and first and second MTJ cells formed in the interlayer dielectric to be coupled in parallel with a drain region of the transistor, wherein the first MTJ cell is coupled to a first bit line formed in the interlayer dielectric and the second MTJ cell is coupled to a second bit line formed in the interlayer dielectric, and wherein a data line is formed between the first MTJ cell and a gate electrode of the transistor to be perpendicular to the first bit line and the second bit line. The MRAM provides high integration density, sufficient sensing margin, high-speed operation and reduced noise, requires reduced current for recording data and eliminates a voltage offset.
摘要翻译：在MRAM及其制造方法中，MRAM包括半导体衬底，形成在半导体衬底上的晶体管，形成在半导体衬底上以覆盖晶体管的层间电介质，以及形成在层间电介质中的第一和第二MTJ单元，与晶体管的漏极区域并联耦合，其中第一MTJ单元耦合到形成在层间电介质中的第一位线，并且第二MTJ单元耦合到形成在层间电介质中的第二位线，并且其中在第一MTJ单元和晶体管的栅电极之间形成垂直于第一位线和第二位线的数据线。 MRAM提供高集成密度，足够的感测余量，高速操作和降低噪声，需要减少记录数据的电流并消除电压偏移。

6. 发明申请

US20050232003A1 MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJs) and method for fabricating the same 有权
标题翻译：包括由一个晶体管和两个磁性隧道结（MTJ）形成的晶胞的MRAM及其制造方法
公开(公告)号：US20050232003A1
公开(公告)日：2005-10-20
申请号：US11152346
申请日：2005-06-15
申请人： Wan-jun Park , Hyung-soon Shin , Seung-jun Lee
发明人： Wan-jun Park , Hyung-soon Shin , Seung-jun Lee
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08 , G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , G11C15/02
摘要： In an MRAM and method for fabricating the same, the MRAM includes a semiconductor substrate, a transistor formed on the semiconductor substrate, an interlayer dielectric formed on the semiconductor substrate to cover the transistor, and first and second MTJ cells formed in the interlayer dielectric to be coupled in parallel with a drain region of the transistor, wherein the first MTJ cell is coupled to a first bit line formed in the interlayer dielectric and the second MTJ cell is coupled to a second bit line formed in the interlayer dielectric, and wherein a data line is formed between the first MTJ cell and a gate electrode of the transistor to be perpendicular to the first bit line and the second bit line. The MRAM provides high integration density, sufficient sensing margin, high-speed operation and reduced noise, requires reduced current for recording data and eliminates a voltage offset.
摘要翻译：在MRAM及其制造方法中，MRAM包括半导体衬底，形成在半导体衬底上的晶体管，形成在半导体衬底上以覆盖晶体管的层间电介质，以及形成在层间电介质中的第一和第二MTJ单元，与晶体管的漏极区域并联耦合，其中第一MTJ单元耦合到形成在层间电介质中的第一位线，并且第二MTJ单元耦合到形成在层间电介质中的第二位线，并且其中在第一MTJ单元和晶体管的栅电极之间形成垂直于第一位线和第二位线的数据线。 MRAM提供高集成密度，足够的感测余量，高速操作和降低噪声，需要减少记录数据的电流并消除电压偏移。

7. 发明授权

US07317219B2 Magnetic random access memory (MRAM) and method of manufacturing the same 有权
标题翻译：磁性随机存取存储器（MRAM）及其制造方法
公开(公告)号：US07317219B2
公开(公告)日：2008-01-08
申请号：US10971704
申请日：2004-10-25
申请人： Sang-jin Park , Tae-wan Kim , Wan-jun Park , Jang-eun Lee
发明人： Sang-jin Park , Tae-wan Kim , Wan-jun Park , Jang-eun Lee
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00 , G11C11/00
CPC分类号： H01L43/08 , G11C11/15 , H01L43/12
摘要： A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.
摘要翻译：磁性随机存取存储器（MRAM）及其制造方法包括连接到开关器件的开关器件和磁性隧道结（MTJ）单元，其中MTJ单元包括具有金属膜和磁膜，磁膜封闭金属膜。

8. 发明申请

US20050146967A1 Magnetic random access memory (MRAM) and method of manufacturing the same 有权
标题翻译：磁性随机存取存储器（MRAM）及其制造方法
公开(公告)号：US20050146967A1
公开(公告)日：2005-07-07
申请号：US10971704
申请日：2004-10-25
申请人： Sang-jin Park , Tae-wan Kim , Wan-jun Park , Jang-eun Lee
发明人： Sang-jin Park , Tae-wan Kim , Wan-jun Park , Jang-eun Lee
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L27/115 , H01L43/08
CPC分类号： H01L43/08 , G11C11/15 , H01L43/12
摘要： A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.
摘要翻译：磁性随机存取存储器（MRAM）及其制造方法包括连接到开关器件的开关器件和磁性隧道结（MTJ）单元，其中MTJ单元包括具有金属膜和磁膜，磁膜封闭金属膜。

9. 发明申请

US20100329001A1 Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween 有权
标题翻译：包括其间具有电化学电位差的磁性膜的半导体存储器件的操作方法
公开(公告)号：US20100329001A1
公开(公告)日：2010-12-30
申请号：US12923013
申请日：2010-08-30
申请人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
发明人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
摘要翻译：提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜当上下磁性膜具有相反的磁化方向时。

10. 发明授权

US07811833B2 Method of manufacturing a multi-purpose magnetic film structure 有权
标题翻译：制造多用途磁性膜结构的方法
公开(公告)号：US07811833B2
公开(公告)日：2010-10-12
申请号：US11898762
申请日：2007-09-14
申请人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
发明人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
IPC分类号： H01L21/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
摘要翻译：提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜当上下磁性膜具有相反的磁化方向时。

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