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1. 发明申请

US20070120147A1 Gallium nitride material transistors and methods associated with the same 有权
标题翻译：氮化镓材料晶体管和与之相关的方法
公开(公告)号：US20070120147A1
公开(公告)日：2007-05-31
申请号：US11598551
申请日：2006-11-13
申请人： Walter Nagy , Ricardo Borges , Jeffrey Brown , Apurva Chaudhari , James Cook , Allen Hanson , Jerry Johnson , Kevin Linthicum , Edwin Piner , Pradeep Rajagopal , John Roberts , Sameer Singhal , Robert Therrien , Andrei Vescan
发明人： Walter Nagy , Ricardo Borges , Jeffrey Brown , Apurva Chaudhari , James Cook , Allen Hanson , Jerry Johnson , Kevin Linthicum , Edwin Piner , Pradeep Rajagopal , John Roberts , Sameer Singhal , Robert Therrien , Andrei Vescan
IPC分类号： H01L31/00
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

2. 发明申请

US20050167775A1 Gallium nitride material transistors and methods associated with the same 有权
标题翻译：氮化镓材料晶体管和与之相关的方法
公开(公告)号：US20050167775A1
公开(公告)日：2005-08-04
申请号：US10913297
申请日：2004-08-05
申请人： Walter Nagy , Ricardo Borges , Jeffrey Brown , Apurva Chaudhari , James Cook , Allen Hanson , Jerry Johnson , Kevin Linthicum , Edwin Piner , Pradeep Rajagopal , John Roberts , Sameer Singhal , Robert Therrien , Andrei Vescan
发明人： Walter Nagy , Ricardo Borges , Jeffrey Brown , Apurva Chaudhari , James Cook , Allen Hanson , Jerry Johnson , Kevin Linthicum , Edwin Piner , Pradeep Rajagopal , John Roberts , Sameer Singhal , Robert Therrien , Andrei Vescan
IPC分类号： H01L29/15 , H01L29/20 , H01L29/778 , H01L29/812
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

3. 发明申请

US20050145851A1 Gallium nitride material structures including isolation regions and methods 审中-公开
标题翻译：氮化镓材料结构包括隔离区和方法
公开(公告)号：US20050145851A1
公开(公告)日：2005-07-07
申请号：US10879695
申请日：2004-06-28
申请人： Jerry Johnson , Ricardo Borges , Jeffrey Brown , James Cook , Allen Hanson , Edwin Piner , Pradeep Rajagopal , John Roberts , Sameer Singhal , Robert Therrien , Andrei Vescan
发明人： Jerry Johnson , Ricardo Borges , Jeffrey Brown , James Cook , Allen Hanson , Edwin Piner , Pradeep Rajagopal , John Roberts , Sameer Singhal , Robert Therrien , Andrei Vescan
IPC分类号： H01L21/285 , H01L21/329 , H01L21/335 , H01L29/20 , H01L29/872 , H01L29/15
CPC分类号： H01L29/7787 , H01L21/28587 , H01L21/7605 , H01L29/2003 , H01L29/66212 , H01L29/66462 , H01L29/872
摘要： Gallium nitride material structures, including devices, and methods associated with the same are provided. In some embodiments, the structures include one or more isolation regions which electrically isolate adjacent devices. One aspect of the invention is the discovery that the isolation regions also can significantly reduce the leakage current of devices (e.g., transistors) made from the structures, particularly devices that also include a passivating layer formed on a surface of the gallium nitride material. Lower leakage currents can result in increased power densities and operating voltages, amongst other advantages.
摘要翻译：提供了氮化镓材料结构，包括器件和与其相关的方法。在一些实施例中，结构包括一个或多个隔离相邻器件的隔离区域。本发明的一个方面是发现隔离区域还可以显着地减少由结构制成的器件（例如，晶体管）的泄漏电流，特别是还包括形成在氮化镓材料表面上的钝化层的器件。较低的漏电流可以导致增加的功率密度和工作电压以及其它优点。

4. 发明申请

US20050133818A1 Gallium nitride material devices including an electrode-defining layer and methods of forming the same 有权
标题翻译：包括电极限定层的氮化镓材料器件及其形成方法
公开(公告)号：US20050133818A1
公开(公告)日：2005-06-23
申请号：US10740376
申请日：2003-12-17
申请人： Jerry Johnson , Robert Therrien , Andrei Vescan , Jeffrey Brown
发明人： Jerry Johnson , Robert Therrien , Andrei Vescan , Jeffrey Brown
IPC分类号： H01L21/285 , H01L21/329 , H01L21/335 , H01L29/20 , H01L29/872 , H01L31/0328
CPC分类号： H01L29/66212 , H01L21/28587 , H01L29/2003 , H01L29/66462 , H01L29/872
摘要： Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines (at least in part) dimensions of the electrode. In some cases, the electrode-defining layer is a passivating layer that is formed on a gallium nitride material region.
摘要翻译：提供了氮化镓材料器件及其形成方法。这些装置包括电极限定层。电极限定层通常形成有在其中形成电极（至少部分）的通孔。因此，通孔限定（至少部分地）电极的尺寸。在一些情况下，电极限定层是形成在氮化镓材料区域上的钝化层。

5. 发明申请

US20070272957A1 Gallium nitride material devices and associated methods 有权
标题翻译：氮化镓材料器件及相关方法
公开(公告)号：US20070272957A1
公开(公告)日：2007-11-29
申请号：US11607129
申请日：2006-11-30
申请人： Jerry Johnson , Sameer Singhal , Allen Hanson , Robert Therrien
发明人： Jerry Johnson , Sameer Singhal , Allen Hanson , Robert Therrien
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/41725 , H01L29/42316 , H01L29/66462
摘要： Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure connected to a source electrode. The conductive structure may form a source field plate which can be formed over a dielectric material and can extend in the direction of the gate electrode of the transistor. The source field plate may reduce the electrical field (e.g., peak electrical field and/or integrated electrical field) in the region of the device between the gate electrode and the drain electrode which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability. These advantages enable the gallium nitride material transistors to operate at high drain efficiencies and/or high output powers. The devices can be used in RF power applications, amongst others.
摘要翻译：氮化镓材料装置和方法相关。在一些实施例中，器件可以是包括连接到源电极的导电结构的晶体管。导电结构可以形成源极场板，其可以形成在介电材料上并且可以在晶体管的栅电极的方向上延伸。源场板可以减小栅电极和漏电极之间的器件区域中的电场（例如，峰电场和/或集成电场），这可导致许多优点，包括减少的栅 - 漏反馈电容，表面电子浓度降低，击穿电压升高，器件可靠性提高。这些优点使得氮化镓材料晶体管以高漏电效率和/或高输出功率工作。这些设备可以用于射频功率应用中。

6. 发明申请

US20060249750A1 Gallium nitride material devices including an electrode-defining layer and methods of forming the same 审中-公开
标题翻译：包括电极限定层的氮化镓材料器件及其形成方法
公开(公告)号：US20060249750A1
公开(公告)日：2006-11-09
申请号：US11477834
申请日：2006-06-29
申请人： Jerry Johnson , Robert Therrien , Andrei Vescan , Jeffrey Brown
发明人： Jerry Johnson , Robert Therrien , Andrei Vescan , Jeffrey Brown
IPC分类号： H01L31/00
CPC分类号： H01L29/66212 , H01L21/28587 , H01L29/2003 , H01L29/66462 , H01L29/872
摘要： Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines (at least in part) dimensions of the electrode. In some cases, the electrode-defining layer is a passivating layer that is formed on a gallium nitride material region.
摘要翻译：提供了氮化镓材料器件及其形成方法。这些装置包括电极限定层。电极限定层通常形成有在其中形成电极（至少部分）的通孔。因此，通孔限定（至少部分地）电极的尺寸。在一些情况下，电极限定层是形成在氮化镓材料区域上的钝化层。

7. 发明申请

US20050285155A1 Semiconductor device-based sensors and methods associated with the same 有权
标题翻译：基于半导体器件的传感器和与之相关的方法
公开(公告)号：US20050285155A1
公开(公告)日：2005-12-29
申请号：US10879704
申请日：2004-06-28
申请人： Jerry Johnson , Edwin Piner , Kevin Linthicum
发明人： Jerry Johnson , Edwin Piner , Kevin Linthicum
IPC分类号： G01N27/414 , H01L21/00 , H01L23/58
CPC分类号： G01N27/129 , G01N27/4148 , H01L2224/48091 , H01L2924/00014
摘要： Semiconductor device-based chemical sensors and methods associated with the same are provided. The sensors include regions that can interact with chemical species being detected. The chemical species may, for example, be a component of a fluid (e.g., gas or liquid). The interaction between the chemical species and a region of the sensor causes a change in a measurable property (e.g., an electrical property) of the device. These changes may be related to the concentration of the chemical species in the medium being characterized.
摘要翻译：提供了基于半导体器件的化学传感器和与之相关的方法。这些传感器包括可以与被检测的化学物质相互作用的区域。化学物质可以例如是流体（例如气体或液体）的组分。化学物质和传感器的区域之间的相互作用导致装置的可测量性质（例如，电气性能）的改变。这些变化可能与所述介质中化学物质的浓度有关。

8. 发明申请

US20070200134A1 Gallium nitride material devices including conductive regions and methods associated with the same 有权
标题翻译：氮化镓材料器件包括导电区域和与之相关的方法
公开(公告)号：US20070200134A1
公开(公告)日：2007-08-30
申请号：US11634332
申请日：2006-12-04
申请人： Robert Therrien , Jerry Johnson , Allen Hanson
发明人： Robert Therrien , Jerry Johnson , Allen Hanson
IPC分类号： H01L33/00
CPC分类号： H01L29/2003 , H01L23/481 , H01L24/89 , H01L29/78 , H01L29/78681 , H01L29/872 , H01L33/32 , H01L33/382 , H01L2924/01322 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/351 , H01L2933/0016 , H01L2924/00
摘要： Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit, or prevent, undesirable reactions between the electrically conductive material and the other component(s) which can impair device performance. In certain embodiments, the electrically conductive material may be formed in a via. For example, the via can extend from a topside of the device to a backside so that the electrically conductive material connects a topside contact to a backside contact. The structures described herein may form the basis of a number of semiconductor devices including transistors (e.g., FET), Schottky diodes, light-emitting diodes and laser diodes, amongst others.
摘要翻译：提供包括III族氮化物（例如氮化镓）材料区域的半导体结构和与这种结构相关的方法。在一些实施例中，结构包括由阻挡材料与结构的某些其它区域（例如，硅衬底）分离的导电材料（例如，金），以便限制或防止不希望的反应导电材料和可能损害器件性能的其他部件。在某些实施例中，导电材料可以形成在通孔中。例如，通孔可以从装置的顶部延伸到背面，使得导电材料将顶侧触点连接到背侧触点。本文所述的结构可以形成包括晶体管（例如FET），肖特基二极管，发光二极管和激光二极管等的多个半导体器件的基础。

9. 发明申请

US20090174557A1 COMPACT FLEXIBLE HIGH GAIN ANTENNA FOR HANDHELD RFID READER 审中-公开
标题翻译：用于手持RFID读写器的紧凑灵活高增益天线
公开(公告)号：US20090174557A1
公开(公告)日：2009-07-09
申请号：US11968972
申请日：2008-01-03
申请人： Pavel Nikitin , KVS Rao , For S. Lam , Steven Schatz , Jerry Johnson
发明人： Pavel Nikitin , KVS Rao , For S. Lam , Steven Schatz , Jerry Johnson
IPC分类号： G08B13/14 , H01Q17/00
CPC分类号： G06K7/10346 , G06K7/10316 , H01Q1/2216 , H01Q1/38 , H01Q19/30 , H01Q21/24 , Y10T29/49018
摘要： A compact flexible high gain antenna is disclosed which includes a co-planar array of at least three substantially parallel main conducting antenna elements, a reflector, a driven element, and a director. Each of these elements may be terminated on the ends by a stub element, and the reflector and the director may include an intermediate meander element. Stub elements capacitively load the antenna, while meander elements inductively load the antenna, and the loading affects the resonant frequency of the antenna. The conducting antenna elements may be affixed to a flexible dielectric substrate and may be bent or curved into different compact shapes, suitable for fitting manufacturing form factors for a handheld RFID reader. The antenna has a high directional gain which results in a longer operating range.
摘要翻译：公开了一种紧凑型柔性高增益天线，其包括至少三个基本上平行的主导电天线元件，反射器，从动元件和导向器的共面阵列。这些元件中的每一个可以通过短截线元件在端部端接，并且反射器和引导件可以包括中间曲折元件。 Stub元件电容性地加载天线，而曲折元件感应地加载天线，并且负载影响天线的谐振频率。导电天线元件可以固定到柔性电介质基底上，并且可以被弯曲或弯曲成不同的紧凑形状，适合于适合用于手持RFID阅读器的制造形状因子。天线具有高的方向增益，这导致更长的操作范围。

10. 发明申请

US20070013515A1 Parental controls for a media console 有权
标题翻译：媒体控制台的家长控制
公开(公告)号：US20070013515A1
公开(公告)日：2007-01-18
申请号：US11182991
申请日：2005-07-15
申请人： Jerry Johnson , Daniel Caiafa , Jeffrey Allen
发明人： Jerry Johnson , Daniel Caiafa , Jeffrey Allen
IPC分类号： G08B13/14
CPC分类号： A63F13/71 , A63F13/10 , A63F13/12 , A63F13/73 , A63F13/75 , A63F2300/532 , A63F2300/5586 , A63F2300/572 , H04N21/4532 , H04N21/4755 , H04N21/4781 , H04N21/6543
摘要： Techniques to enable parental control for a media console are described. One such technique involves enabling user-specific security (or rights) settings. This technique includes first receiving a user identifier from a user interface of a media console. The technique includes next determining a first security profile for the media console based on the user identifier. In this technique, the first security profile defines a supervised operating configuration for the media console that is specific to the user identifier, and which is controlled by an authorized party, such as a parent. Finally, the technique includes enabling use of the first media console subject to the first security profile. In this technique, the first security profile thereby defines parental control choices regarding use of the first media console by the first user, e.g., a child.
摘要翻译：描述了为媒体控制台实现家长控制的技术。一种这样的技术涉及实现用户特定的安全（或权限）设置。该技术包括首先从媒体控制台的用户界面接收用户标识符。该技术包括基于用户标识符确定媒体控制台的第一安全简档。在该技术中，第一安全配置文件定义了媒体控制台的监督操作配置，该配置特定于用户标识符，并由被授权方（诸如父母）控制。最后，该技术包括允许使用受第一安全简档影响的第一媒体控制台。在该技术中，第一安全性配置文件由此定义了关于第一用户（例如，孩子）对第一媒体控制台的使用的父母控制选择。

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