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1. 发明申请

US20070120147A1 Gallium nitride material transistors and methods associated with the same 有权
标题翻译：氮化镓材料晶体管和与之相关的方法
公开(公告)号：US20070120147A1
公开(公告)日：2007-05-31
申请号：US11598551
申请日：2006-11-13
申请人： Walter Nagy , Ricardo Borges , Jeffrey Brown , Apurva Chaudhari , James Cook , Allen Hanson , Jerry Johnson , Kevin Linthicum , Edwin Piner , Pradeep Rajagopal , John Roberts , Sameer Singhal , Robert Therrien , Andrei Vescan
发明人： Walter Nagy , Ricardo Borges , Jeffrey Brown , Apurva Chaudhari , James Cook , Allen Hanson , Jerry Johnson , Kevin Linthicum , Edwin Piner , Pradeep Rajagopal , John Roberts , Sameer Singhal , Robert Therrien , Andrei Vescan
IPC分类号： H01L31/00
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

2. 发明申请

US20050285155A1 Semiconductor device-based sensors and methods associated with the same 有权
标题翻译：基于半导体器件的传感器和与之相关的方法
公开(公告)号：US20050285155A1
公开(公告)日：2005-12-29
申请号：US10879704
申请日：2004-06-28
申请人： Jerry Johnson , Edwin Piner , Kevin Linthicum
发明人： Jerry Johnson , Edwin Piner , Kevin Linthicum
IPC分类号： G01N27/414 , H01L21/00 , H01L23/58
CPC分类号： G01N27/129 , G01N27/4148 , H01L2224/48091 , H01L2924/00014
摘要： Semiconductor device-based chemical sensors and methods associated with the same are provided. The sensors include regions that can interact with chemical species being detected. The chemical species may, for example, be a component of a fluid (e.g., gas or liquid). The interaction between the chemical species and a region of the sensor causes a change in a measurable property (e.g., an electrical property) of the device. These changes may be related to the concentration of the chemical species in the medium being characterized.
摘要翻译：提供了基于半导体器件的化学传感器和与之相关的方法。这些传感器包括可以与被检测的化学物质相互作用的区域。化学物质可以例如是流体（例如气体或液体）的组分。化学物质和传感器的区域之间的相互作用导致装置的可测量性质（例如，电气性能）的改变。这些变化可能与所述介质中化学物质的浓度有关。

3. 发明申请

US20050009304A1 Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches 有权
标题翻译：通过横向生长形成沟槽来制造氮化镓半导体层的方法
公开(公告)号：US20050009304A1
公开(公告)日：2005-01-13
申请号：US10915665
申请日：2004-08-10
申请人： Tsvetanka Zheleva , Darren Thomson , Scott Smith , Kevin Linthicum , Thomas Gehrke , Robert Davis
发明人： Tsvetanka Zheleva , Darren Thomson , Scott Smith , Kevin Linthicum , Thomas Gehrke , Robert Davis
IPC分类号： C30B29/38 , H01L21/20 , H01L21/205 , H01S5/02 , H01L21/00 , C30B1/00 , H01L21/36
CPC分类号： H01L21/0265 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/021 , H01S2304/12
摘要： A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.
摘要翻译：氮化镓层横向生长成氮化镓层中的沟槽，从而形成横向氮化镓半导体层。然后可以在横向氮化镓半导体层中形成至少一个微电子器件。位错缺陷不会横向显着传播到横向氮化镓半导体层中，使得侧向氮化镓半导体层相对无缺陷。

4. 发明申请

US20080116456A1 GALLIUM NITRIDE MATERIAL STRUCTURES INCLUDING SUBSTRATES AND METHODS ASSOCIATED WITH THE SAME 有权
标题翻译：氮化钛材料结构包括基材和与之相关的方法
公开(公告)号：US20080116456A1
公开(公告)日：2008-05-22
申请号：US12024313
申请日：2008-02-01
申请人： Edwin Piner , Pradeep Rajagopal , John Roberts , Kevin Linthicum
发明人： Edwin Piner , Pradeep Rajagopal , John Roberts , Kevin Linthicum
IPC分类号： H01L29/04
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02513 , H01L29/2003 , H01L29/267 , H01L29/66462 , H01L29/7783
摘要： Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.
摘要翻译：提供了氮化镓材料基半导体结构。在一些实施例中，结构包括复合衬底，氮化镓材料区域形成在复合衬底上。氮化镓材料结构可以包括另外的特征，例如应变吸收层和/或过渡层，其也促进有利的应力条件。应力的降低可以减少氮化镓材料区域中的缺陷形成和开裂，同时减少整个结构的翘曲。氮化镓材料基半导体结构可用于诸如晶体管（例如FET）肖特基二极管，发光二极管，激光二极管，SAW器件和传感器等各种应用中。

5. 发明申请

US20070202360A1 Gallium nitride material transistors and methods for wideband applications 审中-公开
标题翻译：氮化镓材料晶体管和宽带应用的方法
公开(公告)号：US20070202360A1
公开(公告)日：2007-08-30
申请号：US11543010
申请日：2006-10-04
申请人： Apurva Chaudhari , Jeffrey Marquart , Walter Nagy , Kevin Linthicum
发明人： Apurva Chaudhari , Jeffrey Marquart , Walter Nagy , Kevin Linthicum
IPC分类号： B32B9/00
CPC分类号： H01L29/41758 , H01L29/2003 , H01L29/42316 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. Such properties enable the transistors to be used in RF power applications including wideband power applications (e.g., WiMAX, WiBRO, and others) based on OFDM modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。这样的特性使得晶体管能够用于包括基于OFDM调制的宽带功率应用（例如，WiMAX，WiBRO等）的RF功率应用中。

6. 发明申请

US20060249748A1 Gallium nitride material structures including substrates and methods associated with the same 有权
标题翻译：氮化镓材料结构，包括与其相关的衬底和方法
公开(公告)号：US20060249748A1
公开(公告)日：2006-11-09
申请号：US11121793
申请日：2005-05-03
申请人： Edwin Piner , Pradeep Rajagopal , John Roberts , Kevin Linthicum
发明人： Edwin Piner , Pradeep Rajagopal , John Roberts , Kevin Linthicum
IPC分类号： H01L29/732
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02513 , H01L29/2003 , H01L29/267 , H01L29/66462 , H01L29/7783
摘要： Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.
摘要翻译：提供了氮化镓材料基半导体结构。在一些实施例中，结构包括复合衬底，氮化镓材料区域形成在复合衬底上。氮化镓材料结构可以包括另外的特征，例如应变吸收层和/或过渡层，其也促进有利的应力条件。应力的降低可以减少氮化镓材料区域中的缺陷形成和开裂，同时减少整个结构的翘曲。氮化镓材料基半导体结构可用于诸如晶体管（例如FET）肖特基二极管，发光二极管，激光二极管，SAW器件和传感器等各种应用中。

7. 发明申请

US20050167775A1 Gallium nitride material transistors and methods associated with the same 有权
标题翻译：氮化镓材料晶体管和与之相关的方法
公开(公告)号：US20050167775A1
公开(公告)日：2005-08-04
申请号：US10913297
申请日：2004-08-05
申请人： Walter Nagy , Ricardo Borges , Jeffrey Brown , Apurva Chaudhari , James Cook , Allen Hanson , Jerry Johnson , Kevin Linthicum , Edwin Piner , Pradeep Rajagopal , John Roberts , Sameer Singhal , Robert Therrien , Andrei Vescan
发明人： Walter Nagy , Ricardo Borges , Jeffrey Brown , Apurva Chaudhari , James Cook , Allen Hanson , Jerry Johnson , Kevin Linthicum , Edwin Piner , Pradeep Rajagopal , John Roberts , Sameer Singhal , Robert Therrien , Andrei Vescan
IPC分类号： H01L29/15 , H01L29/20 , H01L29/778 , H01L29/812
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

8. 发明申请

US20050161702A1 Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby 有权
标题翻译：在包括非氮化镓柱的衬底上制造氮化镓半导体层的方法以及由此制造的氮化镓半导体结构
公开(公告)号：US20050161702A1
公开(公告)日：2005-07-28
申请号：US11074485
申请日：2005-03-08
申请人： Kevin Linthicum , Thomas Gehrke , Robert Davis
发明人： Kevin Linthicum , Thomas Gehrke , Robert Davis
IPC分类号： H01L21/20 , H01L29/15 , C30B1/00 , H01L31/0312
CPC分类号： H01L21/0237 , H01L21/0243 , H01L21/02433 , H01L21/02447 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000° C. or less and the second temperature preferably is about 1100° C. or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium nitride layer. Accordingly, gallium nitride may be grown without the need to form masks during the gallium nitride growth process. Moreover, the gallium nitride growth may be performed using the same processing conditions other than temperatures changes. Accordingly, uninterrupted gallium nitride growth may be performed.
摘要翻译：衬底包括在其间限定沟槽的非氮化镓柱，其中非氮化镓柱包括非氮化镓侧壁和非氮化镓顶部，并且沟槽包括非镓层。氮化镓在非氮化镓柱上生长，包括在非氮化镓顶上。优选地，在非氮化镓顶上生长氮化镓金字塔，然后在氮化镓金字塔上生长氮化镓。氮化镓金字塔优选在第一温度下生长，并且氮化镓优选在高于第一温度的第二温度下生长在锥体上。第一温度优选为约1000℃以下，第二温度优选为约1100℃以上。然而，除了温度之外，相同的加工条件优选用于两个生长步骤。金字塔上生长的氮化镓优选聚结形成连续的氮化镓层。因此，可以在氮化镓生长过程中不需要形成掩模来生长氮化镓。此外，可以使用与温度变化以外的相同的处理条件来进行氮化镓生长。因此，可以进行不间断的氮化镓生长。

9. 发明申请

US20070295985A1 GALLIUM NITRIDE MATERIAL DEVICES AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：氮化铝材料装置及其形成方法
公开(公告)号：US20070295985A1
公开(公告)日：2007-12-27
申请号：US11762985
申请日：2007-06-14
申请人： T. Weeks , Kevin Linthicum
发明人： T. Weeks , Kevin Linthicum
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L29/0657 , H01L29/2003 , H01L29/417 , H01L29/66204 , H01L29/66462 , H01L29/7786 , H01L29/802 , H01L29/861 , H01L31/03044 , H01L31/03048 , H01L31/1848 , H01L31/1856 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/382 , H01L47/026 , H01L2924/10155 , H01S5/0425 , Y02E10/544
摘要： The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), light detecting devices (such as detectors and sensors), power rectifier diodes and FETs (e.g., HFETs), amongst others.
摘要翻译：本发明提供氮化镓材料器件，其结构和形成方法。这些器件包括在诸如硅的衬底上形成的氮化镓材料。示例性设备包括发光器件（例如，LED，激光器），光检测器件（例如检测器和传感器），功率整流二极管和FET（例如，HFET）等。

10. 发明申请

US20050127397A1 Gallium nitride materials including thermally conductive regions 审中-公开
标题翻译：包括导热区域的氮化镓材料
公开(公告)号：US20050127397A1
公开(公告)日：2005-06-16
申请号：US11050598
申请日：2005-02-03
申请人： Ricardo Borges , Kevin Linthicum , T. Weeks , Thomas Gehrke
发明人： Ricardo Borges , Kevin Linthicum , T. Weeks , Thomas Gehrke
IPC分类号： H01L23/34 , H01L23/373 , H01L29/20 , H01L33/00 , H01L21/00 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L23/3735 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： The invention includes providing gallium nitride materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor devices. The thermally conductive regions may include heat spreading layers and heat sinks. Heat spreading layers distribute heat generated during device operation over relatively large areas to prevent excessive localized heating. Heat sinks typically are formed at either the backside or topside of the device and facilitate heat dissipation to the environment. It may be preferable for devices to include a heat spreading layer which is connected to a heat sink at the backside of the device. A variety of semiconductor devices may utilize features of the invention including devices on silicon substrates and devices which generate large amounts of heat such as power transistors.
摘要翻译：本发明包括提供包括导热区域的氮化镓材料和形成这种材料的方法。氮化镓材料可用于形成半导体器件。导热区域可以包括散热层和散热片。热扩散层在比较大的区域中分配在设备操作期间产生的热量，以防止过度的局部加热。散热器通常形成在设备的背面或顶部的两侧，并且便于对环境的散热。对于装置来说，优选地包括连接到装置背面的散热器的散热层。各种半导体器件可以利用本发明的特征，包括硅衬底上的器件和产生大量热量的器件，例如功率晶体管。

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