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1. 发明授权

US07569871B2 Gallium nitride material transistors and methods associated with the same 有权
标题翻译：氮化镓材料晶体管和与之相关的方法
公开(公告)号：US07569871B2
公开(公告)日：2009-08-04
申请号：US12059182
申请日：2008-03-31
申请人： Walter H. Nagy , Jerry Wayne Johnson , Edwin Lanier Piner , Pradeep Rajagopal , John Claassen Roberts , Sameer Singhal , Robert Joseph Therrien , Andrei Vescan , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Kevin J. Linthicum
发明人： Walter H. Nagy , Jerry Wayne Johnson , Edwin Lanier Piner , Pradeep Rajagopal , John Claassen Roberts , Sameer Singhal , Robert Joseph Therrien , Andrei Vescan , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Kevin J. Linthicum
IPC分类号： H01L31/072
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

2. 发明授权

US07352016B2 Gallium nitride material transistors and methods associated with the same 有权
标题翻译：氮化镓材料晶体管和与之相关的方法
公开(公告)号：US07352016B2
公开(公告)日：2008-04-01
申请号：US11598551
申请日：2006-11-13
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Jerry Wayne Johnson , Kevin J. Linthicum , Edwin Lanier Piner , Pradeep Rajagopal , John Claassen Roberts , Sameer Singhal , Robert Joseph Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Jerry Wayne Johnson , Kevin J. Linthicum , Edwin Lanier Piner , Pradeep Rajagopal , John Claassen Roberts , Sameer Singhal , Robert Joseph Therrien , Andrei Vescan
IPC分类号： H01L31/00
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

3. 发明授权

US07135720B2 Gallium nitride material transistors and methods associated with the same 有权
公开(公告)号：US07135720B2
公开(公告)日：2006-11-14
申请号：US10913297
申请日：2004-08-05
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
IPC分类号： H01L31/072
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

4. 发明申请

US20080246058A1 GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH THE SAME 有权
标题翻译：氮化镓材料晶体管及其相关方法
公开(公告)号：US20080246058A1
公开(公告)日：2008-10-09
申请号：US12059182
申请日：2008-03-31
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
IPC分类号： H01L29/00
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

5. 发明授权

US07994540B2 Gallium nitride material transistors and methods associated with the same 有权
标题翻译：氮化镓材料晶体管和与之相关的方法
公开(公告)号：US07994540B2
公开(公告)日：2011-08-09
申请号：US12508871
申请日：2009-07-24
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
IPC分类号： H01L31/0328
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

6. 发明申请

US20100019850A1 GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH THE SAME 有权
标题翻译：氮化镓材料晶体管及其相关方法
公开(公告)号：US20100019850A1
公开(公告)日：2010-01-28
申请号：US12508871
申请日：2009-07-24
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, JR. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, JR. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
IPC分类号： H03F3/16 , H01L29/20
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

7. 发明授权

US09608102B2 Gallium nitride material devices and associated methods 有权
公开(公告)号：US09608102B2
公开(公告)日：2017-03-28
申请号：US11607129
申请日：2006-11-30
申请人： Jerry Wayne Johnson , Sameer Singhal , Allen W. Hanson , Robert Joseph Therrien
发明人： Jerry Wayne Johnson , Sameer Singhal , Allen W. Hanson , Robert Joseph Therrien
IPC分类号： H01L29/66 , H01L29/778 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/41725 , H01L29/42316 , H01L29/66462
摘要： Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure connected to a source electrode. The conductive structure may form a source field plate which can be formed over a dielectric material and can extend in the direction of the gate electrode of the transistor. The source field plate may reduce the electrical field (e.g., peak electrical field and/or integrated electrical field) in the region of the device between the gate electrode and the drain electrode which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability. These advantages enable the gallium nitride material transistors to operate at high drain efficiencies and/or high output powers. The devices can be used in RF power applications, amongst others.

8. 发明授权

US07247889B2 III-nitride material structures including silicon substrates 有权
标题翻译： III族氮化物材料结构，包括硅衬底
公开(公告)号：US07247889B2
公开(公告)日：2007-07-24
申请号：US11004628
申请日：2004-12-03
申请人： Allen W. Hanson , John Claassen Roberts , Edwin L. Piner , Pradeep Rajagopal
发明人： Allen W. Hanson , John Claassen Roberts , Edwin L. Piner , Pradeep Rajagopal
IPC分类号： H01L31/00 , H01L21/28
CPC分类号： H01L29/267 , H01L29/2003 , H01L29/7787
摘要： III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) formed of structures of the invention may have higher output power, power gain and efficiency, amongst other advantages.
摘要翻译：描述了包括硅衬底的III族氮化物材料结构以及与其相关的方法。结构中的寄生损失可能会显着降低，这反映在性能改进中。由本发明的结构形成的器件（例如RF器件）可以具有更高的输出功率，功率增益和效率等优点。

9. 发明授权

US08026581B2 Gallium nitride material devices including diamond regions and methods associated with the same 有权
标题翻译：包括金刚石区域的氮化镓材料器件和与之相关的方法
公开(公告)号：US08026581B2
公开(公告)日：2011-09-27
申请号：US12025976
申请日：2008-02-05
申请人： Allen W. Hanson , Edwin Lanier Piner
发明人： Allen W. Hanson , Edwin Lanier Piner
IPC分类号： H01L23/495 , H01L29/66
CPC分类号： H01L23/3732 , H01L21/02389 , H01L21/02488 , H01L21/02527 , H01L29/2003 , H01L29/4175 , H01L29/7787 , H01L29/812 , H01L2224/48091 , H01L2224/48472 , H01L2924/00014 , H01L2924/00
摘要： Gallium nitride material structures are provided, as well as devices and methods associated with such structures. The structures include a diamond region which may facilitate conduction and removal of heat generated within the gallium nitride material during device operation. The structures described herein may form the basis of a number of semiconductor devices and, in particular, transistors (e.g., FETs).
摘要翻译：提供了氮化镓材料结构，以及与这种结构相关联的装置和方法。这些结构包括金刚石区域，其可以在器件操作期间促进在氮化镓材料内产生的热的传导和去除。本文描述的结构可以形成多个半导体器件，特别是晶体管（例如，FET）的基础。

10. 发明授权

US08288253B1 InxGa1-xAsYP1-Y quaternary etch stop for improved chemical resistivity of gallium arsenide field effect transistors 有权
标题翻译： InxGa1-xAsYP1-Y四次蚀刻停止，用于提高砷化镓场效应晶体管的化学电阻率
公开(公告)号：US08288253B1
公开(公告)日：2012-10-16
申请号：US13173006
申请日：2011-06-30
申请人： Allen W. Hanson , Anthony Kaleta
发明人： Allen W. Hanson , Anthony Kaleta
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/30612 , H01L29/201 , H01L29/66462
摘要： A process for fabricating a semiconductor device. The process including (a) growing a channel layer on a buffer layer, (b) growing a barrier layer on the channel layer, (c) epitaxially growing a quaternary etch-stop layer on the barrier layer, (d) growing a first contact layer on the quaternary etch-stop layer, (e) growing a second contact layer on the first contact layer, (f) etching portions of the second contact layer to reveal a first recess surface, and (g) etching portions of the first contact layer to reveal a second recess surface. The second contact layer may be a highly doped contact layer. The second recess surface generally forms a gate region. The first and the second contact layers have a first etch rate and the quaternary etch-stop layer has a second etch rate in a chosen first etch chemistry.
摘要翻译：一种制造半导体器件的工艺。该方法包括（a）在缓冲层上生长通道层，（b）在沟道层上生长阻挡层，（c）在阻挡层上外延生长四分之一蚀刻停止层，（d）生长第一接触（e）在第一接触层上生长第二接触层，（f）蚀刻第二接触层的部分以露出第一凹部表面，以及（g）蚀刻第一接触部分层以露出第二凹槽表面。第二接触层可以是高度掺杂的接触层。第二凹面通常形成栅极区域。第一和第二接触层具有第一蚀刻速率，并且四次蚀刻停止层在所选择的第一蚀刻化学中具有第二蚀刻速率。

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