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1. 发明申请

US20090130824A1 ARSENIC AND PHOSPHORUS DOPED SILICON WAFER SUBSTRATES HAVING INTRINSIC GETTERING 有权
标题翻译：具有内部入口的亚光和磷光体硅基底片
公开(公告)号：US20090130824A1
公开(公告)日：2009-05-21
申请号：US12347336
申请日：2008-12-31
申请人： Robert J. Falster , Vladimir V. Voronkov , Gabriella Borionetti
发明人： Robert J. Falster , Vladimir V. Voronkov , Gabriella Borionetti
IPC分类号： H01L21/322
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/02
摘要： A process for the preparation of low resistivity arsenic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, reliably form oxygen precipitates.
摘要翻译：一种用于制备低电阻率砷或磷掺杂（N + / N ++）硅晶片的方法，其在基本上任意的电子器件制造工艺的热处理循环期间可靠地形成氧沉淀物。

2. 发明授权

US08026145B2 Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering 有权
标题翻译：具有固有吸气性的砷和磷掺杂硅晶片衬底
公开(公告)号：US08026145B2
公开(公告)日：2011-09-27
申请号：US12347336
申请日：2008-12-31
申请人： Robert J. Falster , Vladimir Voronkov , Gabriella Borionetti
发明人： Robert J. Falster , Vladimir Voronkov , Gabriella Borionetti
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/02
摘要： A process for the preparation of low resistivity arsenic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, reliably form oxygen precipitates.
摘要翻译：一种用于制备低电阻率砷或磷掺杂（N + / N ++）硅晶片的方法，其在基本上任意的电子器件制造工艺的热处理循环期间可靠地形成氧沉淀物。

3. 发明授权

US07485928B2 Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering 有权
标题翻译：具有固有吸气性的砷和磷掺杂硅晶片衬底
公开(公告)号：US07485928B2
公开(公告)日：2009-02-03
申请号：US11270790
申请日：2005-11-09
申请人： Robert J. Falster , Vladimir Voronkov , Gabriella Borionetti
发明人： Robert J. Falster , Vladimir Voronkov , Gabriella Borionetti
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/02
摘要： A process for the preparation of low resistivity arsensic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, reliably form oxygen precipitates.
摘要翻译：用于制备低电阻率砷或磷掺杂（N + / N ++）硅晶片的方法，其在基本上任意的电子器件制造工艺的热处理循环期间可靠地形成氧沉淀物。

4. 发明申请

US20070105279A1 Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering 有权
标题翻译：具有固有吸气性的砷和磷掺杂硅晶片衬底
公开(公告)号：US20070105279A1
公开(公告)日：2007-05-10
申请号：US11270790
申请日：2005-11-09
申请人： Robert Falster , Vladimir Voronkov , Gabriella Borionetti
发明人： Robert Falster , Vladimir Voronkov , Gabriella Borionetti
IPC分类号： H01L21/00
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/02
摘要： A process for the preparation of low resistivity arsensic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, reliably form oxygen precipitates.
摘要翻译：一种用于制备低电阻率砷或磷掺杂（N + / N ++）硅晶片的方法，其在基本上任意的电子器件制造工艺的热处理循环期间可靠地形成氧沉淀物。

5. 发明授权

US5418172A Method for detecting sources of contamination in silicon using a contamination monitor wafer 失效
标题翻译：使用污染监测器晶片检测硅污染源的方法
公开(公告)号：US5418172A
公开(公告)日：1995-05-23
申请号：US84405
申请日：1993-06-29
申请人： Robert Falster , Gabriella Borionetti , Robert A. Craven
发明人： Robert Falster , Gabriella Borionetti , Robert A. Craven
IPC分类号： H01L23/544 , H01L21/66
CPC分类号： H01L22/34
摘要： A method for detecting transition metal contamination in or on equipment and fluids used or being evaluated for use in the manufacture, handling, or shipping of silicon wafers and electronic devices manufactured on silicon wafers. A contamination monitor wafer having an average minority carrier lifetime greater than about 250 microseconds is processed using one or more pieces of equipment or fluids. As part of, or subsequent to the processing step, the contamination monitor wafer is exposed to a temperature of at least 600.degree. C. and the minority carrier lifetime values of the contamination monitor wafer is thereafter determined. To insure that the recombination process is dot dominated by the effects of oxygen precipitates, the contamination monitor wafer should have an oxygen precipitate density of less than 10.sup.8 oxygen precipitates per cubic centimeter before and after being exposed to said temperature of at least 600.degree. C.
摘要翻译：用于检测在硅晶片和硅晶片上制造的硅晶片和电子器件的制造，处理或运输中使用或被评估的设备和流体中的过渡金属污染的方法。使用一件或多件设备或流体处理具有大于约250微秒的平均少数载流子寿命的污染监测器晶片。作为处理步骤的一部分或之后，污染监测晶片暴露于至少600℃的温度，此后确定污染监测晶片的少数载流子寿命值。为了确保重组过程被氧沉淀物的影响所主导，污染监测晶片在暴露于至少600℃的温度之前和之后，应具有每立方厘米少于108个氧沉淀物的氧沉淀物密度。

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