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1. 发明授权

US07345975B2 Metrological digital audio reconstruction 有权
标题翻译：计量数字音频重建
公开(公告)号：US07345975B2
公开(公告)日：2008-03-18
申请号：US10783231
申请日：2004-02-19
申请人： Vitaliy Fadeyev , Carl Haber
发明人： Vitaliy Fadeyev , Carl Haber
IPC分类号： G11B7/28
CPC分类号： G11B3/70
摘要： Audio information stored in the undulations of grooves in a medium such as a phonograph record may be reconstructed, with little or no contact, by measuring the groove shape using precision metrology methods coupled with digital image processing and numerical analysis. The effects of damage, wear, and contamination may be compensated, in many cases, through image processing and analysis methods. The speed and data handling capacity of available computing hardware make this approach practical. Two examples used a general purpose optical metrology system to study a 50 year old 78 r.p.m. phonograph record and a commercial confocal scanning probe to study a 1920's celluloid Edison cylinder. Comparisons are presented with stylus playback of the samples and with a digitally re-mastered version of an original magnetic recording. There is also a more extensive implementation of this approach, with dedicated hardware and software.
摘要翻译：通过使用与数字图像处理和数值分析相结合的精密计量方法测量凹槽形状，可以很少或不接触地重建存储在诸如留声机记录介质中的凹槽波形的音频信息。在许多情况下，通过图像处理和分析方法可以补偿损伤，磨损和污染的影响。可用计算硬件的速度和数据处理能力使此方法实用。两个例子使用通用光学测量系统来研究50岁的78 r.p.m。留声机记录和商业共聚焦扫描探针，研究1920年的赛璐id爱迪生气瓶。与样品的手写笔回放和原始磁记录的数字重新编辑版本相比较。这种方法还有更广泛的实现，具有专门的硬件和软件。

2. 发明申请

US20050002319A1 Metrological digital audio reconstruction 有权
标题翻译：计量数字音频重建
公开(公告)号：US20050002319A1
公开(公告)日：2005-01-06
申请号：US10783231
申请日：2004-02-19
申请人： Vitaliy Fadeyev , Carl Haber
发明人： Vitaliy Fadeyev , Carl Haber
IPC分类号： G11B3/70
CPC分类号： G11B3/70
摘要： Audio information stored in the undulations of grooves in a medium such as a phonograph record may be reconstructed, with little or no contact, by measuring the groove shape using precision metrology methods coupled with digital image processing and numerical analysis. The effects of damage, wear, and contamination may be compensated, in many cases, through image processing and analysis methods. The speed and data handling capacity of available computing hardware make this approach practical. Two examples used a general purpose optical metrology system to study a 50 year old 78 r.p.m. phonograph record and a commercial confocal scanning probe to study a 1920's celluloid Edison cylinder. Comparisons are presented with stylus playback of the samples and with a digitally re-mastered version of an original magnetic recording. There is also a more extensive implementation of this approach, with dedicated hardware and software.
摘要翻译：通过使用与数字图像处理和数值分析相结合的精密计量方法测量凹槽形状，可以很少或不接触地重建存储在诸如留声机记录介质中的凹槽波形的音频信息。在许多情况下，通过图像处理和分析方法可以补偿损伤，磨损和污染的影响。可用计算硬件的速度和数据处理能力使此方法实用。两个例子使用通用光学测量系统来研究50岁的78 r.p.m。留声机记录和商业共聚焦扫描探针，研究1920年的赛璐id爱迪生气瓶。与样品的手写笔回放和原始磁记录的数字重新编辑版本相比较。这种方法还有更广泛的实现，具有专门的硬件和软件。

3. 发明授权

US08841170B2 Methods for scribing of semiconductor devices with improved sidewall passivation 有权
标题翻译：具有改进侧壁钝化的半导体器件划线方法
公开(公告)号：US08841170B2
公开(公告)日：2014-09-23
申请号：US13879971
申请日：2011-10-21
申请人： Vitaliy Fadeyev , Hartmut F. W. Sadrozinski , Marc Christophersen , Bernard F. Phlips
发明人： Vitaliy Fadeyev , Hartmut F. W. Sadrozinski , Marc Christophersen , Bernard F. Phlips
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50 , B23K26/00 , H01L21/78 , H01L31/18 , B23K26/40 , B23K26/36
CPC分类号： B23K26/40 , B23K26/0006 , B23K26/354 , B23K26/359 , B23K26/364 , B23K26/53 , B23K2103/50 , B23K2103/56 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of singulating semiconductor devices in the close proximity to active structures by controlling interface charge of semiconductor device sidewalls is provided that includes forming a scribe on a surface of a semiconductor devices, where the scribe is within 5 degrees of a crystal lattice direction of the semiconductor device, cleaving the semiconductor device along the scribe, where the devices are separated, using a coating process to coat the sidewalls of the cleaved semiconductor device with a passivation material, where the passivation material is disposed to provide a fixed charge density at a semiconductor interface of the sidewalls, and where the fixed charge density interacts with charge carriers in the bulk of the material.
摘要翻译：提供了一种通过控制半导体器件侧壁的界面电荷来分离紧邻有源结构的半导体器件的方法，其包括在半导体器件的表面上形成划线，其中划线在该半导体器件的晶格方向的5度内半导体器件，其中器件被分离地切割半导体器件，其中器件被分离，使用涂覆工艺用钝化材料涂覆切割的半导体器件的侧壁，其中钝化材料被设置以在半导体处提供固定的电荷密度侧壁的界面，并且其中固定的电荷密度与大部分材料中的电荷载体相互作用。

4. 发明申请

US20130203239A1 METHODS FOR SCRIBING OF SEMICONDUCTOR DEVICES WITH IMPROVED SIDEWALL PASSIVATION 有权
标题翻译：用于筛选具有改进的边界钝化的半导体器件的方法
公开(公告)号：US20130203239A1
公开(公告)日：2013-08-08
申请号：US13879971
申请日：2011-10-21
申请人： Vitaliy Fadeyev , Hartmut F.W. Sadrozinski , Marc Christophersen , Bernard F. Phlips
发明人： Vitaliy Fadeyev , Hartmut F.W. Sadrozinski , Marc Christophersen , Bernard F. Phlips
IPC分类号： H01L21/78
CPC分类号： B23K26/40 , B23K26/0006 , B23K26/354 , B23K26/359 , B23K26/364 , B23K26/53 , B23K2103/50 , B23K2103/56 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of singulating semi-conductor devices in the close proximity to active structures by controlling interface charge of semiconductor device sidewalls is provided that includes forming a scribe on a surface of a semi-conductor devices, where the scribe is within 5 degrees of a crystal lattice direction of the semi-conductor device, cleaving the semiconductor device along the scribe, where the devices are separated, using a coating process to coat the sidewalls of the cleaved semiconductor device with a passivation material, where the passivation material is disposed to provide a fixed charge density at a semiconductor interface of the sidewalls, and where the fixed charge density interacts with charge carriers in the bulk of the material.
摘要翻译：提供了一种通过控制半导体器件侧壁的界面电荷来紧密接近有源结构来分离半导体器件的方法，其包括在半导体器件的表面上形成刻划，其中划线在晶体的5度内半导体器件的晶格方向，使用涂覆工艺沿着划线切割半导体器件，其中器件被分离，其中钝化材料被设置成提供钝化材料，涂覆工艺用钝化材料涂覆劈开的半导体器件的侧壁，在侧壁的半导体界面处固定的电荷密度，并且其中固定的电荷密度与材料的主体中的电荷载体相互作用。

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