专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130203239A1 METHODS FOR SCRIBING OF SEMICONDUCTOR DEVICES WITH IMPROVED SIDEWALL PASSIVATION 有权
标题翻译：用于筛选具有改进的边界钝化的半导体器件的方法
公开(公告)号：US20130203239A1
公开(公告)日：2013-08-08
申请号：US13879971
申请日：2011-10-21
申请人： Vitaliy Fadeyev , Hartmut F.W. Sadrozinski , Marc Christophersen , Bernard F. Phlips
发明人： Vitaliy Fadeyev , Hartmut F.W. Sadrozinski , Marc Christophersen , Bernard F. Phlips
IPC分类号： H01L21/78
CPC分类号： B23K26/40 , B23K26/0006 , B23K26/354 , B23K26/359 , B23K26/364 , B23K26/53 , B23K2103/50 , B23K2103/56 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of singulating semi-conductor devices in the close proximity to active structures by controlling interface charge of semiconductor device sidewalls is provided that includes forming a scribe on a surface of a semi-conductor devices, where the scribe is within 5 degrees of a crystal lattice direction of the semi-conductor device, cleaving the semiconductor device along the scribe, where the devices are separated, using a coating process to coat the sidewalls of the cleaved semiconductor device with a passivation material, where the passivation material is disposed to provide a fixed charge density at a semiconductor interface of the sidewalls, and where the fixed charge density interacts with charge carriers in the bulk of the material.
摘要翻译：提供了一种通过控制半导体器件侧壁的界面电荷来紧密接近有源结构来分离半导体器件的方法，其包括在半导体器件的表面上形成刻划，其中划线在晶体的5度内半导体器件的晶格方向，使用涂覆工艺沿着划线切割半导体器件，其中器件被分离，其中钝化材料被设置成提供钝化材料，涂覆工艺用钝化材料涂覆劈开的半导体器件的侧壁，在侧壁的半导体界面处固定的电荷密度，并且其中固定的电荷密度与材料的主体中的电荷载体相互作用。

2. 发明授权

US08841170B2 Methods for scribing of semiconductor devices with improved sidewall passivation 有权
标题翻译：具有改进侧壁钝化的半导体器件划线方法
公开(公告)号：US08841170B2
公开(公告)日：2014-09-23
申请号：US13879971
申请日：2011-10-21
申请人： Vitaliy Fadeyev , Hartmut F. W. Sadrozinski , Marc Christophersen , Bernard F. Phlips
发明人： Vitaliy Fadeyev , Hartmut F. W. Sadrozinski , Marc Christophersen , Bernard F. Phlips
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50 , B23K26/00 , H01L21/78 , H01L31/18 , B23K26/40 , B23K26/36
CPC分类号： B23K26/40 , B23K26/0006 , B23K26/354 , B23K26/359 , B23K26/364 , B23K26/53 , B23K2103/50 , B23K2103/56 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of singulating semiconductor devices in the close proximity to active structures by controlling interface charge of semiconductor device sidewalls is provided that includes forming a scribe on a surface of a semiconductor devices, where the scribe is within 5 degrees of a crystal lattice direction of the semiconductor device, cleaving the semiconductor device along the scribe, where the devices are separated, using a coating process to coat the sidewalls of the cleaved semiconductor device with a passivation material, where the passivation material is disposed to provide a fixed charge density at a semiconductor interface of the sidewalls, and where the fixed charge density interacts with charge carriers in the bulk of the material.
摘要翻译：提供了一种通过控制半导体器件侧壁的界面电荷来分离紧邻有源结构的半导体器件的方法，其包括在半导体器件的表面上形成划线，其中划线在该半导体器件的晶格方向的5度内半导体器件，其中器件被分离地切割半导体器件，其中器件被分离，使用涂覆工艺用钝化材料涂覆切割的半导体器件的侧壁，其中钝化材料被设置以在半导体处提供固定的电荷密度侧壁的界面，并且其中固定的电荷密度与大部分材料中的电荷载体相互作用。

3. 发明申请

US20100096674A1 METHODS AND SYSTEMS OF THICK SEMICONDUCTOR DRIFT DETECTOR FABRICATION 失效
标题翻译：厚度半导体检测器制造方法与系统
公开(公告)号：US20100096674A1
公开(公告)日：2010-04-22
申请号：US12581710
申请日：2009-10-19
申请人： Marc Christophersen , Bernard F. Phlips
发明人： Marc Christophersen , Bernard F. Phlips
IPC分类号： H01L31/08 , H01L31/18 , H01L21/3065
CPC分类号： H01L31/1804 , H01L31/022408 , H01L31/115 , Y02E10/547 , Y02P70/521
摘要： Gray-tone lithography technology is used in combination with a reactive plasma etching operation in the fabrication method and system of a thick semiconductor drift detector. The thick semiconductor drift detector is based on a trench array, where the trenches in the trench array penetrate the bulk with different depths. These trenches form an electrode. By applying different electric potentials to the trenches in the trench array, the silicon between neighboring trenches fully depletes. Furthermore, the applied potentials cause a drifting field for generated charge carriers, which are directed towards a collecting electrode.
摘要翻译：灰色光刻技术与厚半导体漂移检测器的制造方法和系统中的反应等离子体蚀刻操作结合使用。厚半导体漂移检测器基于沟槽阵列，其中沟槽阵列中的沟槽以不同的深度穿透大块。这些沟槽形成电极。通过对沟槽阵列中的沟槽施加不同的电位，相邻沟槽之间的硅完全耗尽。此外，所施加的电位导致产生的电荷载流子的漂移场，其指向集电极。

4. 发明授权

US10473692B2 Method of calibrating a nanometrology instrument 有权
公开(公告)号：US10473692B2
公开(公告)日：2019-11-12
申请号：US14860947
申请日：2015-09-22
申请人： Marc Christophersen , Bernard F. Phlips , Andrew J. Boudreau , Michael K. Yetzbacher
发明人： Marc Christophersen , Bernard F. Phlips , Andrew J. Boudreau , Michael K. Yetzbacher
IPC分类号： G01Q40/02
摘要： A method of calibrating a topography metrology instrument using a calibration reference, which includes a substrate and a plurality of bi-layer stacks. Each bi-layer stack includes a plurality of bi-layer steps. At least one bi-layer step of the plurality of bi-layer steps includes two materials. The at least one bi-layer step of the plurality of bi-layer steps includes an etch stop layer and a bulk layer. The calibration reference includes a calibration reference step profile includes a plurality of predetermined bi-layer stack heights. The calibration reference step profile and the predetermined bi-layer stack heights are measured using a topography metrology instrument. The topography metrology instrument is calibrated based on the measured calibration reference step profile and the measured bi-layer stack heights.

5. 发明授权

US09128192B2 Apparatus systems and methods of sensing chemical bio-chemical and radiological agents using electrophoretic displays 有权
标题翻译：使用电泳显示器感测化学生物化学和放射性物质的装置系统和方法
公开(公告)号：US09128192B2
公开(公告)日：2015-09-08
申请号：US13019675
申请日：2011-02-02
申请人： Marc Christophersen , Bernard F. Phlips
发明人： Marc Christophersen , Bernard F. Phlips
IPC分类号： G01T1/02 , H01J3/14 , G02F1/167
CPC分类号： G01T1/02 , G02F1/167 , H01J3/14
摘要： Caesium-137 irradiates electronic paper. An incoming gamma-ray from the Cs-137 interacts with a particle inside a micro-container by generating a recoil electron and/or a hole. Because the recoil electron physically leaves the particle, the particle is charged depending on the dose from the radiation source. And, the charge of the particles change, which results in a movement of the particles within the micro-container. After refreshing the electronic paper, a visible difference in the gray-scale can be seen. Thus, the visible difference in the gray-scale is an effect caused by the irradiation of the electronic paper, showing sensitivity to high energy radiation—thus, non-optimized electronic paper is sensitive to high energy radiation and can be used as a radiation dosimeter. In addition, electronic paper can be used for sensing chemical and bio-chemical agents, as well as detecting high energy radiation.
摘要翻译：铯-133辐射电子纸。来自Cs-137的进入的γ射线通过产生反冲电子和/或孔而与微容器内的颗粒相互作用。因为反冲电子物理地离开颗粒，所以根据辐射源的剂量对颗粒进行充电。并且，颗粒的电荷改变，这导致微粒在微型容器内的移动。刷新电子纸后，可以看出灰度的明显差异。因此，灰度的可见差异是由电子纸的照射引起的影响，显示出对高能量辐射的敏感性，因此，未优化的电子纸对高能辐射敏感，并且可以用作辐射剂量计。此外，电子纸可用于感测化学和生物化学试剂，以及检测高能量辐射。

6. 发明申请

US20100264502A1 METHODS AND SYSTEMS OF CURVED RADIATION DETECTOR FABRICATION 有权
标题翻译：弯曲辐射检测器制造方法与系统
公开(公告)号：US20100264502A1
公开(公告)日：2010-10-21
申请号：US12581469
申请日：2009-10-19
申请人： Marc Christophersen , Bernard F. Phlips
发明人： Marc Christophersen , Bernard F. Phlips
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/022408 , H01L31/115 , Y02E10/547 , Y02P70/521
摘要： Gray tone lithography is used to form curved silicon topographies for semiconductor based solid-state imaging devices. The imagers are curved to a specific curvature and shaped directly for the specific application; such as curved focal planes. The curvature of the backside is independent from the front surface, which allows thinning of the detector using standard semiconductor processing.
摘要翻译：灰色光刻用于形成半导体固态成像装置的弯曲硅形貌。成像器弯曲成特定曲率并直接针对特定应用形成; 例如弯曲焦平面。背面的曲率独立于前表面，这允许使用标准半导体处理使检测器变薄。

7. 发明申请

US20160091703A1 Method of Calibrating a Nanometrology Instrument 审中-公开
标题翻译：校准纳米仪器的方法
公开(公告)号：US20160091703A1
公开(公告)日：2016-03-31
申请号：US14860947
申请日：2015-09-22
申请人： Marc Christophersen , Bernard F. Phlips , Andrew J. Boudreau , Michael K. Yetzbacher
发明人： Marc Christophersen , Bernard F. Phlips , Andrew J. Boudreau , Michael K. Yetzbacher
IPC分类号： G02B21/30
摘要： A method of calibrating a topography metrology instrument using a calibration reference, which includes a substrate and a plurality of bi-layer stacks. Each bi-layer stack includes a plurality of bi-layer steps. At least one bi-layer step of the plurality of bi-layer steps includes two materials. The at least one bi-layer step of the plurality of bi-layer steps includes an etch stop layer and a bulk layer. The calibration reference includes a calibration reference step profile includes a plurality of predetermined bi-layer stack heights. The calibration reference step profile and the predetermined bi-layer stack heights are measured using a topography metrology instrument. The topography metrology instrument is calibrated based on the measured calibration reference step profile and the measured bi-layer stack heights.
摘要翻译：使用包括衬底和多个双层堆叠的校准参考来校准地形计量仪器的方法。每个双层堆叠包括多个双层步骤。多个双层步骤中的至少一个双层步骤包括两种材料。多个双层步骤的至少一个双层步骤包括蚀刻停止层和体层。校准参考包括校准参考步骤轮廓，其包括多个预定的双层堆叠高度。使用地形计量仪器测量校准参考步骤轮廓和预定的双层堆叠高度。基于测量的校准参考步长轮廓和测量的双层堆叠高度校准地形计量仪器。

8. 发明申请

US20120161266A1 METHODS AND SYSTEMS OF ISOLATING SEGMENTED RADIATION DETECTORS USING ALUMINA 有权
标题翻译：使用氧化铝分离分离的辐射检测器的方法和系统
公开(公告)号：US20120161266A1
公开(公告)日：2012-06-28
申请号：US13408852
申请日：2012-02-29
申请人： Marc Christophersen , Bernard F. Phlips
发明人： Marc Christophersen , Bernard F. Phlips
IPC分类号： H01L31/115 , H01L21/02 , H01L29/36 , H01L31/18
CPC分类号： G03F7/70283 , H01L27/14643 , H01L31/117
摘要： Radiation detectors can be made of n-type or p-type silicon. All segmented detectors on p-type silicon and double-sided detectors on n-type silicon require an “inter-segment isolation” to separate the n-type strips from each other; an alumina layer for isolating the strip detectors is applied, and forms negative charges at the silicon interface with appropriate densities. When alumina dielectric is deposited on silicon, the negative interface charge acts like an effective p-stop or p-spray barrier because electrons are “pushed” away from the interface due to the negative interface charge.
摘要翻译：辐射检测器可以由n型或p型硅制成。 n型硅上的p型硅和双面检测器上的所有分段检测器需要“间隔隔离”以将n型条彼此分离; 施加用于隔离带状检测器的氧化铝层，并在适当密度的硅界面处形成负电荷。当氧化铝介质沉积在硅上时，负界面电荷像一个有效的p-停止或p-喷射势垒一样起作用，因为由于负界面电荷，电子被“推”离开界面。

9. 发明授权

US08932894B2 Methods and systems of curved radiation detector fabrication 有权
标题翻译：弯曲辐射探测器制造的方法和系统
公开(公告)号：US08932894B2
公开(公告)日：2015-01-13
申请号：US12581469
申请日：2009-10-19
申请人： Marc Christophersen , Bernard F. Phlips
发明人： Marc Christophersen , Bernard F. Phlips
IPC分类号： H01L21/00 , H01L31/115 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/022408 , H01L31/115 , Y02E10/547 , Y02P70/521
摘要： Gray tone lithography is used to form curved silicon topographies for semiconductor based solid-state imaging devices. The imagers are curved to a specific curvature and shaped directly for the specific application; such as curved focal planes. The curvature of the backside is independent from the front surface, which allows thinning of the detector using standard semiconductor processing.
摘要翻译：灰色光刻用于形成半导体固态成像装置的弯曲硅形貌。成像器弯曲成特定曲率并直接针对特定应用形成; 例如弯曲焦平面。背面的曲率独立于前表面，这允许使用标准半导体处理使检测器变薄。

10. 发明申请

US20140327099A1 NANOMETER-SCALE LEVEL STRUCTURES AND FABRICATION METHOD FOR DIGITAL ETCHING OF NANOMETER-SCALE LEVEL STRUCTURES 有权
标题翻译：纳米尺度水平结构数字蚀刻的纳米级尺度结构与制造方法
公开(公告)号：US20140327099A1
公开(公告)日：2014-11-06
申请号：US14269292
申请日：2014-05-05
申请人： Andrew J. Boudreau , Michael K. Yetzbacher , Marc Christophersen , Bernard F. Phlips
发明人： Andrew J. Boudreau , Michael K. Yetzbacher , Marc Christophersen , Bernard F. Phlips
IPC分类号： H01L27/146
CPC分类号： H01L27/14629 , G01J3/26 , G02B6/136 , G02B6/29358 , H01L21/31144 , H01L27/14601 , H01L27/14625 , H01L27/14683 , H01L27/14685
摘要： A ramped etalon cavity structure and a method of fabricating same. A bi-layer stack is deposited on a substrate. The bi-layer stack includes a plurality of bi-layers. Each bi-layer of the plurality of bi-layers includes an etch stop layer and a bulk layer. A three dimensional photoresist structure is formed by using gray-tone lithography. The three dimensional photoresist is plasma etched into the bi-layer stack, thereby generating an etched bi-layer stack. The etched bi-layer stack is chemically etched with a first chemical etchant to generate a multiple-step structure on the substrate, wherein the first chemical etchant stops at the etch stop layer.
摘要翻译：斜坡标准孔结构及其制造方法。双层堆叠沉积在基板上。双层堆叠包括多个双层。多个双层的每个双层包括蚀刻停止层和体层。通过使用灰度光刻法形成三维光致抗蚀剂结构。将三维光致抗蚀剂等离子体蚀刻到双层堆叠中，从而产生蚀刻的双层堆叠。蚀刻的双层堆叠用第一化学蚀刻剂化学蚀刻，以在衬底上产生多步结构，其中第一化学蚀刻剂在蚀刻停止层处停止。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式