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1. 发明申请

US20110122717A1 REPLACING DEFECTIVE COLUMNS OF MEMORY CELLS IN RESPONSE TO EXTERNAL ADDRESSES 有权
标题翻译：在外部地址响应中更换记忆细胞的有缺陷的位点
公开(公告)号：US20110122717A1
公开(公告)日：2011-05-26
申请号：US13017168
申请日：2011-01-31
申请人： Vishal Sarin , William H. Radke , Dzung H. Nguyen
发明人： Vishal Sarin , William H. Radke , Dzung H. Nguyen
IPC分类号： G11C29/04
CPC分类号： G11C29/848
摘要： Controllers and memory devices are provided. In an embodiment, a controller is configured to address a non-defective column of memory cells of a memory device in place of a defective column of memory cells of the memory device in response to receiving an address of the defective column of memory cells from the memory device. In another embodiment, a memory device has columns of memory cells and is configured to receive an external address that addresses a non-defective column of memory cells of a sequence of columns of memory cells of the memory device in place of a defective column of memory cells of the sequence of columns of memory cells such that the non-defective column replaces the defective column. The non-defective column is a proximate non-defective column following the defective column in the sequence of columns that is available to replace the defective column.
摘要翻译：提供控制器和存储器件。在一个实施例中，控制器被配置为响应于接收来自存储器单元的存储器单元的缺陷列的地址，来代替存储器件的存储器单元的无缺陷列来代替存储器件的存储器单元的缺陷列存储设备。在另一个实施例中，存储器设备具有存储单元的列，并且被配置为接收寻址存储器件的存储器单元列序列的无缺陷列的存储器单元的外部地址，而不是缺陷存储器列存储单元列的序列的单元，使得无缺陷列替代缺陷列。无缺陷列是可用于替换缺陷列的列序列中的缺陷列之后的邻近无缺陷列。

2. 发明授权

US07881134B2 Replacing defective columns of memory cells in response to external addresses 有权
标题翻译：根据外部地址更换存储单元的有缺陷的列
公开(公告)号：US07881134B2
公开(公告)日：2011-02-01
申请号：US12272138
申请日：2008-11-17
申请人： Vishal Sarin , William H. Radke , Dzung H. Nguyen
发明人： Vishal Sarin , William H. Radke , Dzung H. Nguyen
IPC分类号： G11C29/00
CPC分类号： G11C29/848
摘要： Electronic systems and methods of operating memory devices are provided. In one such embodiment, a memory device receives an external address that addresses a non-defective column of memory cells of a sequence of columns of memory cells of the memory device in place of a defective column of memory cells of the sequence of columns of memory cells such that the non-defective memory column replaces the defective memory column. The non-defective column of memory cells is proximate non-defective column of memory cells following the defective column of memory cells in the sequence of columns of memory cells that is available to replace the defective column of memory cells.
摘要翻译：提供了操作存储器件的电子系统和方法。在一个这样的实施例中，存储器装置接收外部地址，其代替存储器装置的存储器单元列的序列的不存在列的存储器单元的代替存储器列序列的存储器单元的缺陷列使得无缺陷存储器列替换缺陷存储器列。存储器单元的无缺陷列位于存储器单元列中的有缺陷列之后的存储器单元的缺陷列之后的非缺陷列，该存储器单元的列可用于替换存储单元的有缺陷的列。

3. 发明申请

US20100124132A1 REPLACING DEFECTIVE COLUMNS OF MEMORY CELLS IN RESPONSE TO EXTERNAL ADDRESSES 有权
标题翻译：在外部地址响应中更换记忆细胞的有缺陷的位点
公开(公告)号：US20100124132A1
公开(公告)日：2010-05-20
申请号：US12272138
申请日：2008-11-17
申请人： Vishal Sarin , William H. Radke , Dzung H. Nguyen
发明人： Vishal Sarin , William H. Radke , Dzung H. Nguyen
IPC分类号： G11C29/00 , G11C8/00
CPC分类号： G11C29/848
摘要： Electronic systems and methods of operating memory devices are provided. In one such embodiment, a memory device receives an external address that addresses a non-defective column of memory cells of a sequence of columns of memory cells of the memory device in place of a defective column of memory cells of the sequence of columns of memory cells such that the non-defective memory column replaces the defective memory column. The non-defective column of memory cells is proximate non-defective column of memory cells following the defective column of memory cells in the sequence of columns of memory cells that is available to replace the defective column of memory cells.
摘要翻译：提供了操作存储器件的电子系统和方法。在一个这样的实施例中，存储器装置接收外部地址，其代替存储器装置的存储器单元列的序列的不存在列的存储器单元的代替存储器列序列的存储器单元的缺陷列使得无缺陷存储器列替换缺陷存储器列。存储器单元的无缺陷列位于存储器单元列中的有缺陷列之后的存储器单元的缺陷列之后的非缺陷列，该存储器单元的列可用于替换存储单元的缺陷列。

4. 发明授权

US08446787B2 Replacing defective memory blocks in response to external addresses 有权
标题翻译：更换有缺陷的内存块以响应外部地址
公开(公告)号：US08446787B2
公开(公告)日：2013-05-21
申请号：US12274426
申请日：2008-11-20
申请人： Vishal Sarin , Dzung H. Nguyen , William H. Radke
发明人： Vishal Sarin , Dzung H. Nguyen , William H. Radke
IPC分类号： G11C29/08
CPC分类号： G11C29/04 , G11C29/808 , G11C29/82 , G11C29/848
摘要： Electronic systems and methods of operating memory devices are provided. In one such embodiment, a memory device receives an external address that addresses a non-defective memory block of a sequence of memory blocks of the memory device in place of a defective memory block of the sequence of memory blocks such that the non-defective memory block replaces the defective memory block. The non-defective memory block is proximate non-defective memory block following the defective memory block in the sequence of memory blocks that is available to replace the defective memory block.
摘要翻译：提供了操作存储器件的电子系统和方法。在一个这样的实施例中，存储器设备接收外部地址，其代替存储器块序列的缺陷存储器块来寻址存储器件的一系列存储器块的无缺陷存储器块，使得无缺陷存储器块代替有缺陷的内存块。在缺陷存储器块之后的无缺陷存储器块是可用于替换有缺陷的存储器块的存储器块序列中的缺陷存储器块之后的非缺陷存储块。

5. 发明授权

US08295109B2 Replacing defective columns of memory cells in response to external addresses 有权
标题翻译：根据外部地址更换存储单元的有缺陷的列
公开(公告)号：US08295109B2
公开(公告)日：2012-10-23
申请号：US13017168
申请日：2011-01-31
申请人： Vishal Sarin , William H. Radke , Dzung H. Nguyen
发明人： Vishal Sarin , William H. Radke , Dzung H. Nguyen
IPC分类号： G11C29/00
CPC分类号： G11C29/848
摘要： Controllers and memory devices are provided. In an embodiment, a controller is configured to address a non-defective column of memory cells of a memory device in place of a defective column of memory cells of the memory device in response to receiving an address of the defective column of memory cells from the memory device. In another embodiment, a memory device has columns of memory cells and is configured to receive an external address that addresses a non-defective column of memory cells of a sequence of columns of memory cells of the memory device in place of a defective column of memory cells of the sequence of columns of memory cells such that the non-defective column replaces the defective column. The non-defective column is a proximate non-defective column following the defective column in the sequence of columns that is available to replace the defective column.
摘要翻译：提供控制器和存储器件。在一个实施例中，控制器被配置为响应于接收来自存储器单元的存储器单元的缺陷列的地址，来代替存储器件的存储器单元的无缺陷列来代替存储器件的存储器单元的缺陷列存储设备。在另一个实施例中，存储器设备具有存储单元的列，并且被配置为接收寻址存储器件的存储器单元列序列的无缺陷列的存储器单元的外部地址，而不是缺陷存储器列存储单元列的序列的单元，使得无缺陷列替代缺陷列。无缺陷列是可用于替换缺陷列的列序列中的缺陷列之后的邻近无缺陷列。

6. 发明申请

US20100124133A1 REPLACING DEFECTIVE MEMORY BLOCKS IN RESPONSE TO EXTERNAL ADDRESSES 有权
标题翻译：对外部地址更换有缺陷的记忆块
公开(公告)号：US20100124133A1
公开(公告)日：2010-05-20
申请号：US12274426
申请日：2008-11-20
申请人： Vishal Sarin , Dzung H. Nguyen , William H. Radke
发明人： Vishal Sarin , Dzung H. Nguyen , William H. Radke
IPC分类号： G11C29/00 , G11C8/00
CPC分类号： G11C29/04 , G11C29/808 , G11C29/82 , G11C29/848
摘要： Electronic systems and methods of operating memory devices are provided. In one such embodiment, a memory device receives an external address that addresses a non-defective memory block of a sequence of memory blocks of the memory device in place of a defective memory block of the sequence of memory blocks such that the non-defective memory block replaces the defective memory block. The non-defective memory block is proximate non-defective memory block following the defective memory block in the sequence of memory blocks that is available to replace the defective memory block.
摘要翻译：提供了操作存储器件的电子系统和方法。在一个这样的实施例中，存储器设备接收外部地址，其代替存储器块序列的缺陷存储器块来寻址存储器件的一系列存储器块的无缺陷存储器块，使得无缺陷存储器块代替有缺陷的内存块。在缺陷存储器块之后的无缺陷存储器块是可用于替换有缺陷的存储器块的存储器块序列中的缺陷存储器块之后的非缺陷存储块。

7. 发明授权

US08762629B2 Data conditioning to improve flash memory reliability 有权
标题翻译：数据调理提高闪存的可靠性
公开(公告)号：US08762629B2
公开(公告)日：2014-06-24
申请号：US13616486
申请日：2012-09-14
申请人： William H. Radke , Vishal Sarin , Jung-Sheng Hoei
发明人： William H. Radke , Vishal Sarin , Jung-Sheng Hoei
IPC分类号： G06F13/00 , G06F13/28
CPC分类号： G06F11/1072 , G06F12/0246 , G06F2212/7205 , G06F2212/7208 , G11C11/5628 , G11C29/52 , G11C2211/5641
摘要： Methods and apparatus for managing data storage in memory devices utilizing memory arrays of varying density memory cells. Data can be initially stored in lower density memory. Data can be further read, compacted, conditioned and written to higher density memory as background operations. Methods of data conditioning to improve data reliability during storage to higher density memory and methods for managing data across multiple memory arrays are also disclosed.
摘要翻译：用于利用不同密度存储单元的存储器阵列来管理存储器件中的数据存储的方法和装置。数据最初可以存储在较低密度的存储器中。可以将数据进一步读取，压缩，调节并写入高密度存储器作为后台操作。还公开了用于在存储到更高密度存储器期间提高数据可靠性的数据调节方法以及用于跨多个存储器阵列管理数据的方法。

8. 发明申请

US20130010542A1 PROGRAMMING METHODS AND MEMORIES 有权
标题翻译：编程方法和记忆
公开(公告)号：US20130010542A1
公开(公告)日：2013-01-10
申请号：US13176886
申请日：2011-07-06
申请人： Vishal Sarin , William H. Radke , Frankie F. Roohparvar
发明人： Vishal Sarin , William H. Radke , Frankie F. Roohparvar
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3418 , G11C16/3427 , G11C16/3454
摘要： Methods of programming a memory and memories are disclosed. In at least one embodiment, a memory is programmed by determining a pretarget threshold voltage for a selected cell, wherein the pretarget threshold voltage is determined using pretarget threshold voltage values for at least one neighbor cell of the selected cell.
摘要翻译：公开了对存储器和存储器进行编程的方法。在至少一个实施例中，通过确定所选择的单元的预定阈值电压来对存储器进行编程，其中使用所选单元的至少一个相邻单元的预定阈值电压值来确定预定阈值电压。

9. 发明授权

US08281061B2 Data conditioning to improve flash memory reliability 有权
标题翻译：数据调理提高闪存的可靠性
公开(公告)号：US08281061B2
公开(公告)日：2012-10-02
申请号：US12059831
申请日：2008-03-31
申请人： William H. Radke , Vishal Sarin , Jung-Sheng Hoei
发明人： William H. Radke , Vishal Sarin , Jung-Sheng Hoei
IPC分类号： G06F13/00 , G06F13/28 , G06F11/00
CPC分类号： G06F11/1072 , G06F12/0246 , G06F2212/7205 , G06F2212/7208 , G11C11/5628 , G11C29/52 , G11C2211/5641
摘要： Methods and apparatus for managing data storage in memory devices utilizing memory arrays of varying density memory cells. Data can be initially stored in lower density memory. Data can be further read, compacted, conditioned and written to higher density memory as background operations. Methods of data conditioning to improve data reliability during storage to higher density memory and methods for managing data across multiple memory arrays are also disclosed.
摘要翻译：用于利用不同密度存储单元的存储器阵列来管理存储器件中的数据存储的方法和装置。数据最初可以存储在较低密度的存储器中。可以将数据进一步读取，压缩，调节并写入高密度存储器作为后台操作。还公开了用于在存储到更高密度存储器期间提高数据可靠性的数据调节方法以及用于跨多个存储器阵列管理数据的方法。

10. 发明申请

US20120008399A1 METHODS OF OPERATING MEMORIES INCLUDING CHARACTERIZING MEMORY CELL SIGNAL LINES 有权
标题翻译：包括表征记忆细胞信号线的记忆的操作方法
公开(公告)号：US20120008399A1
公开(公告)日：2012-01-12
申请号：US13235995
申请日：2011-09-19
申请人： Jung-Sheng Hoei , Jonathan Pabustan , Vishal Sarin , William H. Radke , Frankie F. Roohparvar
发明人： Jung-Sheng Hoei , Jonathan Pabustan , Vishal Sarin , William H. Radke , Frankie F. Roohparvar
IPC分类号： G11C16/04
CPC分类号： G11C16/26 , G11C5/063 , G11C11/5628 , G11C11/5642 , G11C16/10
摘要： Methods of operating memories facilitate compensating for memory cell signal line propagation delays, such as to increase the overall threshold voltage range and non-volatile memory cell states available. Methods include selecting a memory cell signal line of a memory and characterizing the memory cell signal line by determining an RC time constant of the memory cell signal line.
摘要翻译：操作存储器的方法有助于补偿存储器单元信号线传播延迟，例如增加总体阈值电压范围和可用的非易失性存储器单元状态。方法包括通过确定存储单元信号线的RC时间常数来选择存储器的存储单元信号线并表征存储单元信号线。

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