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1. 发明授权

US07336516B2 Unified multilevel memory systems and methods 有权
标题翻译：统一的多级内存系统和方法
公开(公告)号：US07336516B2
公开(公告)日：2008-02-26
申请号：US11229191
申请日：2005-09-15
申请人： Hieu Van Tran , Hung Q. Nguyen , Vishal Sarin , Loc B. Hoang , Isao Nojima
发明人： Hieu Van Tran , Hung Q. Nguyen , Vishal Sarin , Loc B. Hoang , Isao Nojima
IPC分类号： G11C15/00
CPC分类号： G11C16/22 , G11C11/5642 , G11C15/00 , G11C15/04 , G11C15/046 , G11C16/26 , G11C2211/5641
摘要： A Unified Memory may store multiple types of content such as data or fast code or slow code. The data or code may be stored in separate arrays or in a common array. In an array, a tag bit may indicate the type of content such as data or fast code or slow code or single level or multilevel content. Tag bit may indicate communication interface or IO driver type. Sense amplifiers may be configurable based on the type of data being read. A Flash Security Measure is used to protect a protected memory area. A Flash Security Key is used for authentication and authorization a particular memory area. A XCAM (e.g., CAM) array is included in the Unified Memory. Unified Memory Concurrency is included.
摘要翻译：统一存储器可以存储多种类型的内容，例如数据或快速代码或慢速代码。数据或代码可以存储在单独的数组或公共数组中。在阵列中，标签位可以指示诸如数据或快速代码或慢代码或单级或多级内容的内容的类型。标记位可能表示通信接口或IO驱动程序类型。感测放大器可以基于正在读取的数据的类型来配置。 Flash安全措施用于保护受保护的内存区域。 Flash安全密钥用于对特定内存区域进行身份验证和授权。统一存储器中包含XCAM（例如，CAM）阵列。包括统一内存并发。

2. 发明申请

US20080278986A1 High-Speed and Low-Power Differential Non-Volatile Content Addressable Memory Cell and Array 有权
标题翻译：高速和低功耗差分非易失性内容可寻址存储器单元和阵列
公开(公告)号：US20080278986A1
公开(公告)日：2008-11-13
申请号：US12176281
申请日：2008-07-18
申请人： Vishal Sarin , Hieu Van Tran , Isao Nojima
发明人： Vishal Sarin , Hieu Van Tran , Isao Nojima
IPC分类号： G11C15/04
CPC分类号： G11C14/00 , G11C15/046
摘要： A differential non-volatile content addressable memory array has a differential non-volatile content addressable memory cell which uses a pair of non-volatile storage elements. Each of the non-volatile storage elements can be a split-gate floating gate transistor or a stack gate floating gate transistor having a first terminal, a second terminal, a channel therebetween and a floating gate over at least a portion of the channel to control the conduction of electrons in the channel, and a control gate. The floating gate storage transistor can be in one of two states: a first state, such as erase, in which current can flow between the first terminal and the second terminal, and a second state, such as programmed, in which substantially no current flows between the first terminal and the second terminal. A pair of differential compare data lines connects to the control gate of each of the pair of non-volatile floating gate transistors. A match line connects to the first terminal of each of the pair of non-volatile floating gate transistors to a first voltage. Finally, the second terminals of each storage element is connected to a second voltage, different from the first voltage. A current passing through the memory cell is indicative of a mis-match between the contents of the compare data lines and the contents of the storage elements.
摘要翻译：差分非易失性内容可寻址存储器阵列具有使用一对非易失性存储元件的差分非易失性内容可寻址存储器单元。每个非易失性存储元件可以是分离栅极浮栅晶体管或堆叠栅极浮栅晶体管，其具有第一端子，第二端子，其间的沟道以及通道的至少一部分上的浮置栅极以控制通道中的电子传导，以及控制栅极。浮置栅极存储晶体管可以处于以下两种状态之一：电流可以在第一端子和第二端子之间流动的第一状态，例如擦除，以及第二状态，诸如编程的，其中基本上没有电流流动在第一端子和第二端子之间。一对差分比较数据线连接到该对非易失性浮栅晶体管中的每一个的控制栅极。匹配线将一对非易失性浮栅晶体管的每一个的第一端连接到第一电压。最后，每个存储元件的第二端子被连接到与第一电压不同的第二电压。通过存储单元的电流表示比较数据线的内容与存储元件的内容之间的错误匹配。

3. 发明授权

US07212459B2 Unified multilevel cell memory 有权
标题翻译：统一的多层单元格内存
公开(公告)号：US07212459B2
公开(公告)日：2007-05-01
申请号：US11126495
申请日：2005-05-10
申请人： Hieu Van Tran , Hung Q. Nguyen , Vishal Sarin , Loc B. Hoang , Isao Nojima
发明人： Hieu Van Tran , Hung Q. Nguyen , Vishal Sarin , Loc B. Hoang , Isao Nojima
IPC分类号： G11C7/02
CPC分类号： G11C16/22 , G11C11/5642 , G11C15/00 , G11C15/04 , G11C15/046 , G11C16/26 , G11C2211/5641
摘要： A Unified Memory may store multiple types of content such as data or fast code or slow code. The data or code may be stored in separate arrays or in a common array. In an array, a tag bit may indicate the type of content such as data or fast code or slow code or single level or multilevel content. Tag bit may indicate communication interface or IO driver type. Sense amplifiers may be configurable based on the type of data being read. A Flash Security Measure is used to protect a protected memory area. A Flash Security Key is used for authentication and authorization a particular memory area. A XCAM (e.g., CAM) array is included in the Unified Memory. Unified Memory Concurrency is included.
摘要翻译：统一存储器可以存储多种类型的内容，例如数据或快速代码或慢速代码。数据或代码可以存储在单独的数组或公共数组中。在阵列中，标签位可以指示诸如数据或快速代码或慢代码或单级或多级内容的内容的类型。标记位可能表示通信接口或IO驱动程序类型。感测放大器可以基于正在读取的数据的类型来配置。 Flash安全措施用于保护受保护的内存区域。 Flash安全密钥用于对特定内存区域进行身份验证和授权。统一存储器中包含XCAM（例如，CAM）阵列。包括统一内存并发。

4. 发明授权

US07019998B2 Unified multilevel cell memory 有权
标题翻译：统一的多层单元格内存
公开(公告)号：US07019998B2
公开(公告)日：2006-03-28
申请号：US10659226
申请日：2003-09-09
申请人： Hieu Van Tran , Hung Q. Nguyen , Vishal Sarin , Loc B. Hoang , Isao Nojima
发明人： Hieu Van Tran , Hung Q. Nguyen , Vishal Sarin , Loc B. Hoang , Isao Nojima
IPC分类号： G11C15/00
CPC分类号： G11C16/22 , G11C11/5642 , G11C15/00 , G11C15/04 , G11C15/046 , G11C16/26 , G11C2211/5641
摘要： A Unified Memory may store multiple types of content such as data or fast code or slow code. The data or code may be stored in separate arrays or in a common array. In an array, a tag bit may indicate the type of content such as data or fast code or slow code or single level or multilevel content. Tag bit may indicate communication interface or IO driver type. Sense amplifiers may be configurable based on the type of data being read. A Flash Security Measure is used to protect a protected memory area. A Flash Security Key is used for authentication and authorization a particular memory area. A XCAM (e.g., CAM) array is included in the Unified Memory. Unified Memory Concurrency is included.
摘要翻译：统一存储器可以存储多种类型的内容，例如数据或快速代码或慢速代码。数据或代码可以存储在单独的数组或公共数组中。在阵列中，标签位可以指示诸如数据或快速代码或慢代码或单级或多级内容的内容的类型。标记位可能表示通信接口或IO驱动程序类型。感测放大器可以基于正在读取的数据的类型来配置。 Flash安全措施用于保护受保护的内存区域。 Flash安全密钥用于对特定内存区域进行身份验证和授权。统一存储器中包含XCAM（例如，CAM）阵列。包括统一内存并发。

5. 发明授权

US07729150B2 High-speed and low-power differential non-volatile content addressable memory cell and array 有权
标题翻译：高速和低功耗差分非易失性内容可寻址存储单元和阵列
公开(公告)号：US07729150B2
公开(公告)日：2010-06-01
申请号：US12176281
申请日：2008-07-18
申请人： Vishal Sarin , Hieu Van Tran , Isao Nojima
发明人： Vishal Sarin , Hieu Van Tran , Isao Nojima
IPC分类号： G11C15/00
CPC分类号： G11C14/00 , G11C15/046
摘要： A differential non-volatile content addressable memory array has a differential non-volatile content addressable memory cell which uses a pair of non-volatile storage elements. Each of the non-volatile storage elements can be a split-gate floating gate transistor or a stack gate floating gate transistor having a first terminal, a second terminal, a channel therebetween and a floating gate over at least a portion of the channel to control the conduction of electrons in the channel, and a control gate. The floating gate storage transistor can be in one of two states: a first state, such as erase, in which current can flow between the first terminal and the second terminal, and a second state, such as programmed, in which substantially no current flows between the first terminal and the second terminal. A pair of differential compare data lines connects to the control gate of each of the pair of non-volatile floating gate transistors. A match line connects to the first terminal of each of the pair of non-volatile floating gate transistors to a first voltage. Finally, the second terminals of each storage element is connected to a second voltage, different from the first voltage. A current passing through the memory cell is indicative of a mis-match between the contents of the compare data lines and the contents of the storage elements.
摘要翻译：差分非易失性内容可寻址存储器阵列具有使用一对非易失性存储元件的差分非易失性内容可寻址存储器单元。每个非易失性存储元件可以是分离栅极浮栅晶体管或堆叠栅极浮栅晶体管，其具有第一端子，第二端子，其间的沟道以及通道的至少一部分上的浮置栅极以控制通道中的电子传导，以及控制栅极。浮置栅极存储晶体管可以处于以下两种状态之一：电流可以在第一端子和第二端子之间流动的第一状态，例如擦除，以及第二状态，诸如编程的，其中基本上没有电流流动在第一端子和第二端子之间。一对差分比较数据线连接到该对非易失性浮栅晶体管中的每一个的控制栅极。匹配线将一对非易失性浮栅晶体管的每一个的第一端连接到第一电压。最后，每个存储元件的第二端子被连接到与第一电压不同的第二电压。通过存储单元的电流表示比较数据线的内容与存储元件的内容之间的错误匹配。

6. 发明授权

US07423895B2 High-speed and low-power differential non-volatile content addressable memory cell and array 有权
标题翻译：高速和低功耗差分非易失性内容可寻址存储单元和阵列
公开(公告)号：US07423895B2
公开(公告)日：2008-09-09
申请号：US11717922
申请日：2007-03-13
申请人： Vishal Sarin , Hieu Van Tran , Isao Nojima
发明人： Vishal Sarin , Hieu Van Tran , Isao Nojima
IPC分类号： G11C15/00
CPC分类号： G11C14/00 , G11C15/046
摘要： A differential non-volatile content addressable memory array has a differential non-volatile content addressable memory cell which uses a pair of non-volatile storage elements. Each of the non-volatile storage elements can be a split-gate floating gate transistor or a stack gate floating gate transistor having a first terminal, a second terminal, a channel therebetween and a floating gate over at least a portion of the channel to control the conduction of electrons in the channel, and a control gate. The floating gate storage transistor can be in one of two states: a first state, such as erase, in which current can flow between the first terminal and the second terminal, and a second state, such as programmed, in which substantially no current flows between the first terminal and the second terminal. A pair of differential compare data lines connects to the control gate of each of the pair of non-volatile floating gate transistors. A match line connects to the first terminal of each of the pair of non-volatile floating gate transistors to a first voltage. Finally, the second terminals of each storage element is connected to a second voltage, different from the first voltage. A current passing through the memory cell is indicative of a mis-match between the contents of the compare data lines and the contents of the storage elements.
摘要翻译：差分非易失性内容可寻址存储器阵列具有使用一对非易失性存储元件的差分非易失性内容可寻址存储器单元。每个非易失性存储元件可以是分离栅极浮栅晶体管或堆叠栅极浮栅晶体管，其具有第一端子，第二端子，其间的沟道以及通道的至少一部分上的浮置栅极以控制通道中的电子传导，以及控制栅极。浮置栅极存储晶体管可以处于以下两种状态之一：电流可以在第一端子和第二端子之间流动的第一状态，例如擦除，以及第二状态，诸如编程的，其中基本上没有电流流动在第一端子和第二端子之间。一对差分比较数据线连接到该对非易失性浮栅晶体管中的每一个的控制栅极。匹配线将一对非易失性浮栅晶体管的每一个的第一端连接到第一电压。最后，每个存储元件的第二端子被连接到与第一电压不同的第二电压。通过存储单元的电流表示比较数据线的内容与存储元件的内容之间的错误匹配。

7. 发明授权

US07196921B2 High-speed and low-power differential non-volatile content addressable memory cell and array 有权
标题翻译：高速和低功耗差分非易失性内容可寻址存储单元和阵列
公开(公告)号：US07196921B2
公开(公告)日：2007-03-27
申请号：US10893811
申请日：2004-07-19
申请人： Vishal Sarin , Hieu Van Tran , Isao Nojima
发明人： Vishal Sarin , Hieu Van Tran , Isao Nojima
IPC分类号： G11C15/00
CPC分类号： G11C14/00 , G11C15/046
摘要： A differential non-volatile content addressable memory array has a differential non-volatile content addressable memory cell which uses a pair of non-volatile storage elements. Each of the non-volatile storage elements can be a split-gate floating gate transistor or a stack gate floating gate transistor having a first terminal, a second terminal, a channel therebetween and a floating gate over at least a portion of the channel to control the conduction of electrons in the channel, and a control gate. The floating gate storage transistor can be in one of two states: a first state, such as erase, in which current can flow between the first terminal and the second terminal, and a second state, such as programmed, in which substantially no current flows between the first terminal and the second terminal. A pair of differential compare data lines connects to the control gate of each of the pair of non-volatile floating gate transistors. A match line connects to the first terminal of each of the pair of non-volatile floating gate transistors to a first voltage. Finally, the second terminals of each storage element is connected to a second voltage, different from the first voltage. A current passing through the memory cell is indicative of a mis-match between the contents of the compare data lines and the contents of the storage elements.
摘要翻译：差分非易失性内容可寻址存储器阵列具有使用一对非易失性存储元件的差分非易失性内容可寻址存储器单元。每个非易失性存储元件可以是分离栅极浮栅晶体管或堆叠栅极浮栅晶体管，其具有第一端子，第二端子，其间的沟道以及通道的至少一部分上的浮置栅极以控制通道中的电子传导，以及控制栅极。浮置栅极存储晶体管可以处于以下两种状态之一：电流可以在第一端子和第二端子之间流动的第一状态，例如擦除，以及第二状态，诸如编程的，其中基本上没有电流流动在第一端子和第二端子之间。一对差分比较数据线连接到该对非易失性浮栅晶体管中的每一个的控制栅极。匹配线将一对非易失性浮栅晶体管的每一个的第一端连接到第一电压。最后，每个存储元件的第二端子被连接到与第一电压不同的第二电压。通过存储单元的电流表示比较数据线的内容与存储元件的内容之间的错误匹配。

8. 发明授权

US07149110B2 Seek window verify program system and method for a multilevel non-volatile memory integrated circuit system 有权
标题翻译：寻求窗口验证程序系统和方法，用于多级非易失性存储器集成电路系统
公开(公告)号：US07149110B2
公开(公告)日：2006-12-12
申请号：US10737689
申请日：2003-12-15
申请人： Hieu Van Tran , Hung Q. Nguyen , Amitay Levi , Isao Nojima
发明人： Hieu Van Tran , Hung Q. Nguyen , Amitay Levi , Isao Nojima
IPC分类号： G11C11/34
CPC分类号： G11C13/0064 , G11C11/5621 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C11/5678 , G11C13/0004 , G11C13/0026 , G11C13/0028 , G11C13/004 , G11C13/0069 , G11C16/08 , G11C16/10 , G11C16/24 , G11C16/28 , G11C27/005 , G11C2013/0054 , G11C2211/5634
摘要： A memory comprises a plurality of digital multilevel memory cells. A window of valid data voltages for accessing the said plurality of digital multilevel memory cells is detected. The window may be detected by incrementing a first programming voltage to program data in the plurality of memory cells and verifying whether the data in at least one of said plurality of memory cells is properly programmed. The incrementing and verifying may be repeated until data is verified to be properly programmed in one of said plurality of memory cells. The data in each memory cell of said plurality of memory cells is verified. The verification may be by incrementing a second programming voltage, and verifying whether data in each memory cell is properly programmed within a margin. The incrementing and verifying is repeated for each memory cell outside of the margin.
摘要翻译：存储器包括多个数字多电平存储器单元。检测用于访问所述多个数字多电平存储器单元的有效数据电压的窗口。可以通过将第一编程电压递增到多个存储器单元中的程序数据并且验证所述多个存储器单元中的至少一个中的数据是否被适当地编程来检测窗口。可以重复递增和验证直到数据被验证为在所述多个存储器单元之一中被适当地编程。验证所述多个存储单元的每个存储单元中的数据。验证可以通过增加第二编程电压，并验证每个存储器单元中的数据是否在一定的范围内被适当地编程。对边缘外的每个存储单元重复递增和验证。

9. 发明申请

US20050052934A1 Unified multilevel cell memory 有权
标题翻译：统一的多层单元格内存
公开(公告)号：US20050052934A1
公开(公告)日：2005-03-10
申请号：US10659226
申请日：2003-09-09
申请人： Hieu Tran , Hung Nguyen , Vishal Sarin , Loc Hoang , Isao Nojima
发明人： Hieu Tran , Hung Nguyen , Vishal Sarin , Loc Hoang , Isao Nojima
IPC分类号： G11C11/56 , G11C15/04 , G11C16/22 , G11C16/26 , G11C8/00
CPC分类号： G11C16/22 , G11C11/5642 , G11C15/00 , G11C15/04 , G11C15/046 , G11C16/26 , G11C2211/5641
摘要： A Unified Memory may store multiple types of content such as data or fast code or slow code. The data or code may be stored in separate arrays or in a common array. In an array, a tag bit may indicate the type of content such as data or fast code or slow code or single level or multilevel content. Tag bit may indicate communication interface or IO driver type. Sense amplifiers may be configurable based on the type of data being read. A Flash Security Measure is used to protect a protected memory area. A Flash Security Key is used for authentication and authorization a particular memory area. A XCAM (e.g., CAM) array is included in the Unified Memory. Unified Memory Concurrency is included.
摘要翻译：统一存储器可以存储多种类型的内容，例如数据或快速代码或慢速代码。数据或代码可以存储在单独的数组或公共数组中。在阵列中，标签位可以指示诸如数据或快速代码或慢代码或单级或多级内容的内容的类型。标记位可能表示通信接口或IO驱动程序类型。感测放大器可以基于正在读取的数据的类型来配置。 Flash安全措施用于保护受保护的内存区域。 Flash安全密钥用于对特定内存区域进行身份验证和授权。统一存储器中包含XCAM（例如，CAM）阵列。包括统一内存并发。

10. 发明申请

US20060013028A1 High-speed and low-power differential non-volatile content addressable memory cell and array 有权
标题翻译：高速和低功耗差分非易失性内容可寻址存储单元和阵列
公开(公告)号：US20060013028A1
公开(公告)日：2006-01-19
申请号：US10893811
申请日：2004-07-19
申请人： Vishal Sarin , Hieu Tran , Isao Nojima
发明人： Vishal Sarin , Hieu Tran , Isao Nojima
IPC分类号： G11C15/00
CPC分类号： G11C14/00 , G11C15/046
摘要： A differential non-volatile content addressable memory array has a differential non-volatile content addressable memory cell which uses a pair of non-volatile storage elements. Each of the non-volatile storage elements can be a split-gate floating gate transistor or a stack gate floating gate transistor having a first terminal, a second terminal, a channel therebetween and a floating gate over at least a portion of the channel to control the conduction of electrons in the channel, and a control gate. The floating gate storage transistor can be in one of two states: a first state, such as erase, in which current can flow between the first terminal and the second terminal, and a second state, such as programmed, in which substantially no current flows between the first terminal and the second terminal. A pair of differential compare data lines connects to the control gate of each of the pair of non-volatile floating gate transistors. A match line connects to the first terminal of each of the pair of non-volatile floating gate transistors to a first voltage. Finally, the second terminals of each storage element is connected to a second voltage, different from the first voltage. A current passing through the memory cell is indicative of a mis-match between the contents of the compare data lines and the contents of the storage elements.
摘要翻译：差分非易失性内容可寻址存储器阵列具有使用一对非易失性存储元件的差分非易失性内容可寻址存储器单元。每个非易失性存储元件可以是分离栅极浮栅晶体管或堆叠栅极浮栅晶体管，其具有第一端子，第二端子，其间的沟道以及通道的至少一部分上的浮置栅极以控制通道中的电子传导，以及控制栅极。浮置栅极存储晶体管可以处于以下两种状态之一：电流可以在第一端子和第二端子之间流动的第一状态，例如擦除，以及第二状态，诸如编程的，其中基本上没有电流流动在第一端子和第二端子之间。一对差分比较数据线连接到该对非易失性浮栅晶体管中的每一个的控制栅极。匹配线将一对非易失性浮栅晶体管的每一个的第一端连接到第一电压。最后，每个存储元件的第二端子被连接到与第一电压不同的第二电压。通过存储单元的电流表示比较数据线的内容与存储元件的内容之间的错误匹配。

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