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1. 发明授权

US08283199B2 Solar cell patterning and metallization 失效
标题翻译：太阳能电池图案化和金属化
公开(公告)号：US08283199B2
公开(公告)日：2012-10-09
申请号：US12624668
申请日：2009-11-24
申请人： Virendra V. S. Rana , Chris Eberspacher , Karl J. Armstrong , Nety M. Krishna
发明人： Virendra V. S. Rana , Chris Eberspacher , Karl J. Armstrong , Nety M. Krishna
IPC分类号： H01L21/28 , H01L21/312 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/0682 , H01L31/0747 , Y02E10/547
摘要： Embodiments of the present invention generally provide methods for forming conductive structures on the surfaces of a solar cell. In one embodiment, conductive structures are formed on the front surface of a solar cell by depositing a sacrificial polymer layer, forming patterned lines in the sacrificial polymer via a fluid jet, depositing metal layers over the front surface of the solar cell, and performing lift off of the metal layers deposited over the sacrificial polymer by dissolving the sacrificial polymer with a water based solvent. In another embodiment, conductive structures are formed on the back surface of a solar cell by depositing a sacrificial polymer layer, forming patterned lines in the sacrificial polymer via a fluid jet, depositing a metal layer over the back surface of the solar cell, and performing lift off of the metal layer deposited over the sacrificial polymer by dissolving the sacrificial polymer with a water based solvent, and completing selective metallization of the remaining metal lines.
摘要翻译：本发明的实施例通常提供在太阳能电池的表面上形成导电结构的方法。在一个实施例中，通过沉积牺牲聚合物层在导电结构的前表面上形成导电结构，通过流体射流在牺牲聚合物中形成图案线，在太阳能电池的前表面上沉积金属层，并执行电梯通过用水基溶剂溶解牺牲聚合物来沉积在牺牲聚合物上的金属层。在另一个实施例中，通过沉积牺牲聚合物层，在牺牲聚合物中形成图案化线，经由流体射流，在太阳能电池的背面上沉积金属层，并在通过用水基溶剂溶解牺牲聚合物，从而沉积在牺牲聚合物上沉积的金属层，并完成其余金属线的选择性金属化。

2. 发明授权

US08258426B2 Laser material removal methods and apparatus 失效
标题翻译：激光材料去除方法和装置
公开(公告)号：US08258426B2
公开(公告)日：2012-09-04
申请号：US12545488
申请日：2009-08-21
申请人： Zhenhua Zhang , Virendra V. S. Rana , Vinay K. Shah , Chris Eberspacher
发明人： Zhenhua Zhang , Virendra V. S. Rana , Vinay K. Shah , Chris Eberspacher
IPC分类号： B23K26/00 , B23K26/02
CPC分类号： B23K26/03 , B23K26/06 , B23K26/0624 , B23K26/082 , B23K26/0853 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L31/022441 , H01L31/0682 , H01L31/18 , Y02E10/547
摘要： Embodiments of the present invention generally provide methods and apparatus for material removal using lasers in the fabrication of solar cells. In one embodiment, an apparatus is provided that precisely removes portions of a dielectric layer deposited on a solar cell substrate according to a desired pattern and deposits a conductive layer over the patterned dielectric layer. In one embodiment, the apparatus also removes portions of the conductive layer in a desired pattern. In certain embodiments, methods for removing a portion of a material via a laser without damaging the underlying substrate are provided. In one embodiment, the intensity profile of the beam is adjusted so that the difference between the maximum and minimum intensity within a spot formed on a substrate surface is reduced to an optimum range. In one example, the substrate is positioned such that the peak intensity at the center versus the periphery of the substrate is lowered. In one embodiment, the pulse energy is improved to provide thermal stress and physical lift-off of a desired portion of a dielectric layer.
摘要翻译：本发明的实施例一般提供了在制造太阳能电池中使用激光去除材料的方法和装置。在一个实施例中，提供了一种装置，其根据期望的图案精确地去除沉积在太阳能电池基板上的电介质层的部分，并且在图案化的电介质层上沉积导电层。在一个实施例中，该装置还以期望的图案去除导电层的部分。在某些实施例中，提供了用于通过激光去除材料的一部分而不损坏下面的衬底的方法。在一个实施例中，调整光束的强度分布，使得在衬底表面上形成的斑点内的最大和最小强度之间的差减小到最佳范围。在一个示例中，衬底被定位成使得在中心处的衬底的峰值强度相对于衬底的周边被降低。在一个实施例中，改善脉冲能量以提供电介质层的期望部分的热应力和物理剥离。

3. 发明授权

US08569650B2 Laser material removal methods and apparatus 失效
标题翻译：激光材料去除方法和装置
公开(公告)号：US08569650B2
公开(公告)日：2013-10-29
申请号：US13565455
申请日：2012-08-02
申请人： Zhenhua Zhang , Virendra V. S. Rana , Vinay K. Shah , Chris Eberspacher
发明人： Zhenhua Zhang , Virendra V. S. Rana , Vinay K. Shah , Chris Eberspacher
IPC分类号： H01L21/44 , B23K26/03
CPC分类号： B23K26/03 , B23K26/06 , B23K26/0624 , B23K26/082 , B23K26/0853 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L31/022441 , H01L31/0682 , H01L31/18 , Y02E10/547
摘要： Embodiments of the present invention generally provide methods and apparatus for material removal using lasers in the fabrication of solar cells. In one embodiment, an apparatus is provided that removes portions of a dielectric layer deposited on a solar cell substrate according to a desired pattern. In certain embodiments, methods for removing a portion of a material via a laser without damaging the underlying substrate are provided. In one embodiment, the intensity profile of the beam is adjusted so that the difference between the maximum and minimum intensity within a spot formed on a substrate surface is reduced to an optimum range. In one example, the substrate is positioned such that the peak intensity at the center versus the periphery of the substrate is lowered. In one embodiment, the pulse energy is improved to provide thermal stress and physical lift-off of a desired portion of a dielectric layer.
摘要翻译：本发明的实施例一般提供了在制造太阳能电池中使用激光去除材料的方法和装置。在一个实施例中，提供了根据期望的图案去除沉积在太阳能电池基板上的电介质层的部分的装置。在某些实施例中，提供了用于通过激光去除材料的一部分而不损坏下面的衬底的方法。在一个实施例中，调整光束的强度分布，使得在衬底表面上形成的斑点内的最大和最小强度之间的差减小到最佳范围。在一个示例中，衬底被定位成使得在中心处的衬底的峰值强度相对于衬底的周边被降低。在一个实施例中，改善脉冲能量以提供电介质层的期望部分的热应力和物理剥离。

4. 发明授权

US06191026B1 Method for submicron gap filling on a semiconductor substrate 失效
标题翻译：在半导体衬底上的亚微米间隙填充的方法
公开(公告)号：US06191026B1
公开(公告)日：2001-02-20
申请号：US08584042
申请日：1996-01-09
申请人： Virendra V. S. Rana , Andrew Conners , Anand Gupta , Xin Guo , Soonil Hong
发明人： Virendra V. S. Rana , Andrew Conners , Anand Gupta , Xin Guo , Soonil Hong
IPC分类号： H01L214763
CPC分类号： H01L21/02131 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31116 , H01L21/31629 , H01L21/76801 , H01L21/76837
摘要： A semiconductor manufacturing process with improved gap fill capabilities is provided by a three step process of FSG deposition/etchback/FSG deposition. A first layer of FSG is partially deposited over a metal layer. An argon sputter etchback step is then carried out to etch out excess deposition material. Finally, a second layer of FSG is deposited to complete the gap fill process.
摘要翻译：通过FSG沉积/回蚀/ FSG沉积的三步工艺提供具有改进的间隙填充能力的半导体制造工艺。 FSG的第一层部分沉积在金属层上。然后进行氩溅射回蚀步骤以蚀刻掉多余的沉积材料。最后，存放第二层FSG以完成间隙填充过程。

5. 发明授权

US06121163A Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface 失效
标题翻译：用于改善界面处等离子体增强CVD膜的膜质量的方法和装置
公开(公告)号：US06121163A
公开(公告)日：2000-09-19
申请号：US599270
申请日：1996-02-09
申请人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
发明人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
IPC分类号： C30B29/18 , C23C16/40 , C23C16/50 , H01L21/205 , H01L21/316 , H05H1/24
CPC分类号： H01J37/32082 , C23C16/401 , H01L21/02131 , H01L21/02274 , H01L21/31629
摘要： A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.
摘要翻译：一种用于在界面处沉积具有改进的膜质量的层的方法和装置。该方法包括以下步骤：将惰性气体引入处理室并通过以选定的增加的速率向腔室施加RF功率从惰性气体形成等离子体。在RF功率达到全功率之后，引入包括反应气体的处理气体以沉积该层。在优选的实施方案中，反应气体是四乙氧基硅烷。在另一优选实施方案中，工艺气体还包括氟。

6. 发明授权

US5084415A Metallization processing 失效
标题翻译：金属加工
公开(公告)号：US5084415A
公开(公告)日：1992-01-28
申请号：US425642
申请日：1989-10-23
申请人： Ajit S. Manocha , Virendra V. S. Rana
发明人： Ajit S. Manocha , Virendra V. S. Rana
IPC分类号： H01L21/3205 , H01L23/52 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78
CPC分类号： H01L21/32051
摘要： When forming a metallization layer in integrated-circuit semiconductor device fabrication, metal such as tungsten, for example, adheres poorly to dielectrics such as, e.g., silicon oxide, and tends to flake off from wafer areas not covered by a glue layer- such areas typically including the backside and the edge of the wafer, and clip marks on the face of the wafer. The invention prevents flaking by processing including: forming an adhesive or glue layer on the dielectric, forming a metal layer, forming a protective layer on metal on the glue layer, and etching to remove metal not covered by the protective layer.

7. 发明授权

US4544438A Liquid phase epitaxial growth of bismuth-containing garnet films 失效
标题翻译：含铋榴石薄膜的液相外延生长
公开(公告)号：US4544438A
公开(公告)日：1985-10-01
申请号：US615836
申请日：1984-05-31
申请人： Lars C. Luther , Virendra V. S. Rana
发明人： Lars C. Luther , Virendra V. S. Rana
IPC分类号： G11C11/14 , C30B19/02 , H01F41/28 , C30B19/04
CPC分类号： C30B19/02 , C30B29/28
摘要： Epitaxial layers of bismuth containing magnetic garnet materials are grown from a melt which comprises flux components lead oxide, bismuth oxide, and one or several additional oxides selected from vanadium oxide, tungsten oxide, and molybdenum oxide. The presence of such additional flux component results in increased magnetic anisotropy per degree of supercooling and thus enhances device properties and facilitates epitaxial layer deposition.
摘要翻译：包含磁性石榴石材料的含铋的外延层由熔融物生长，该熔体包含助焊剂组分氧化铅，氧化铋和选自氧化钒，氧化钨和氧化钼的一种或多种另外的氧化物。这种额外的通量组分的存在导致每个过冷却度的磁各向异性增加，从而增强器件特性并促进外延层沉积。

8. 发明授权

US6103601A Method and apparatus for improving film stability of halogen-doped silicon oxide films 有权
标题翻译：用于提高卤素掺杂氧化硅膜的膜稳定性的方法和装置
公开(公告)号：US6103601A
公开(公告)日：2000-08-15
申请号：US330247
申请日：1999-06-10
申请人： Peter W. Lee , Stuardo Robles , Anand Gupta , Virendra V. S. Rana , Amrita Verma
发明人： Peter W. Lee , Stuardo Robles , Anand Gupta , Virendra V. S. Rana , Amrita Verma
IPC分类号： H01L21/768 , C23C16/40 , C23C16/56 , H01L21/31 , H01L21/3105 , H01L21/316 , H01L23/522 , H01L21/425 , H01L21/469
CPC分类号： H01L21/02131 , C23C16/401 , C23C16/56 , H01L21/02274 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/31629
摘要： A fluorine-doped silicate glass (FSG) layer having a low dielectric constant and a method of forming such an insulating layer is described. The FSG layer is treated with a post-treatment step to make the layer resistant to moisture absorption and outgassing of fluorine atoms. In one embodiment, the post-treatment step includes forming a thin, undoped silicate glass layer on top of the FSG layer, and in another embodiment, the stability of the FSG film is increased by a post-treatment plasma step.
摘要翻译：描述了具有低介电常数的氟掺杂硅酸盐玻璃（FSG）层和形成这种绝缘层的方法。 FSG层通过后处理步骤进行处理，以使该层对氟原子的吸湿和除气有抵抗作用。在一个实施方案中，后处理步骤包括在FSG层的顶部上形成薄的未掺杂的硅酸盐玻璃层，在另一个实施方案中，通过后处理等离子体步骤来增加FSG膜的稳定性。

9. 发明授权

US5292554A Deposition apparatus using a perforated pumping plate 失效
标题翻译：使用穿孔泵板的沉积设备
公开(公告)号：US5292554A
公开(公告)日：1994-03-08
申请号：US975251
申请日：1992-11-12
申请人： Ashok K. Sinha , Steve G. Ghanayem , Virendra V. S. Rana
发明人： Ashok K. Sinha , Steve G. Ghanayem , Virendra V. S. Rana
IPC分类号： C30B25/12 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , C30B25/14 , H01L21/205 , H01L21/285 , H01L21/31 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/45591 , C23C16/54 , H01L21/68721
摘要： In a deposition apparatus, a barrier is used to separate a process gas section from the section of the chamber below the substrate on which a metal layer is deposited. The substrate is supported on a support. During an unloading stage, purge gas is introduced into the chamber below the substrate. To prevent the substrate from being moved on the support by the purge gas, the barrier is perforated so that the process gas can flow through the barrier and into a vacuum manifold system.
摘要翻译：在沉积设备中，使用阻挡层将工艺气体部分与沉积有金属层的衬底下面的腔室部分分开。基板支撑在支撑件上。在卸载阶段，吹扫气体被引入基板下面的室中。为了防止衬底通过吹扫气体在支撑体上移动，屏障被穿孔，使得工艺气体可以流过阻挡层并进入真空歧管系统。

10. 发明授权

US5227335A Tungsten metallization 失效
标题翻译：钨金属化
公开(公告)号：US5227335A
公开(公告)日：1993-07-13
申请号：US517973
申请日：1990-04-30
申请人： Lowell H. Holschwandner , Virendra V. S. Rana
发明人： Lowell H. Holschwandner , Virendra V. S. Rana
IPC分类号： H01L21/3205 , H01L21/768
CPC分类号： H01L21/76886 , H01L21/32051
摘要： The adhesion of tungsten to an underlying dielectric layer is improved by the use of a thin glue layer of either TiN or Al.
摘要翻译：通过使用TiN或Al的薄胶层来改善钨对下面的介电层的附着力。

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