专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050035380A1 Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer 失效
标题翻译：大尺寸的单原子和单晶层，金刚石型碳，以及制造该层的方法
公开(公告)号：US20050035380A1
公开(公告)日：2005-02-17
申请号：US10947706
申请日：2004-09-23
申请人： Vincent Derycke , Gerald Dujardin , Andrew Mayne , Patrick Soukiassian
发明人： Vincent Derycke , Gerald Dujardin , Andrew Mayne , Patrick Soukiassian
IPC分类号： C30B29/04 , C30B1/00 , C30B1/10 , C30B33/00 , H01L29/16 , H01L31/0312
CPC分类号： H01L29/1602 , C30B1/00 , C30B29/04 , C30B29/36 , C30B33/00 , H01L29/16 , Y10S117/902
摘要： Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2x2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C≡C (4) of sp configuration, into a plane of dimers C-C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.
摘要翻译：大尺寸的单原子和单晶层，金刚石型碳，以及制造该层的方法。根据本发明，根据重建c（2x2），由碳原子平面终止的SiC中形成单晶衬底（2），并且进行至少一个退火，能够将该原子面转变为平面的sp构型的二聚体C = C（4）进入sp 3的二聚体CC（8）的平面。应用于微电子，光学，光电子学，微机电和生物材料。

2. 发明授权

US06924509B2 Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer 失效
标题翻译：大尺寸的单原子和单晶层，金刚石型碳，以及制造该层的方法
公开(公告)号：US06924509B2
公开(公告)日：2005-08-02
申请号：US10947706
申请日：2004-09-23
申请人： Vincent Derycke , Gérald Dujardin , Andrew Mayne , Patrick Soukiassian
发明人： Vincent Derycke , Gérald Dujardin , Andrew Mayne , Patrick Soukiassian
IPC分类号： C30B29/04 , C30B1/00 , C30B1/10 , C30B33/00 , H01L29/16 , H01L31/0312
CPC分类号： H01L29/1602 , C30B1/00 , C30B29/04 , C30B29/36 , C30B33/00 , H01L29/16 , Y10S117/902
摘要： Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer.According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2×2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C≡C (4) of sp configuration, into a plane of dimers C—C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.
摘要翻译：大尺寸的单原子和单晶层，金刚石型碳，以及制造该层的方法。根据本发明，根据重建c（2x2），由碳原子平面终止的SiC中形成单晶衬底（2），并且进行至少一个退火，能够将该原子面转变为平面的sp构型的二聚体C≡C（4）进入sp 3+配置的二聚体CC（8）的平面。应用于微电子，光学，光电子学，微机电和生物材料。

3. 发明授权

US06667102B1 Silicon layer highly sensitive to oxygen and method for obtaining same 失效
标题翻译：对氧气敏感的硅层及其制备方法
公开(公告)号：US06667102B1
公开(公告)日：2003-12-23
申请号：US10130269
申请日：2002-05-24
申请人： Fabrice Amy , Christian Brylinski , Gérald Dujardin , Hanna Enriquez , Andrew Mayne , Patrick Soukiassian
发明人： Fabrice Amy , Christian Brylinski , Gérald Dujardin , Hanna Enriquez , Andrew Mayne , Patrick Soukiassian
IPC分类号： H01L2120
CPC分类号： H01L21/02532 , H01L21/02378 , H01L21/02381 , H01L21/02433 , H01L21/02609 , H01L21/049 , H01L29/045
摘要： A highly oxygen-sensitive silicon layer (2) is formed on a substrate (4) of, for example, SiC. The layer (2) has a 4×3 surface structure. The silicon layer (2) is deposited on a surface of the substrate (4) in a substantially uniform manner. The highly oxygen-sensitive silicon layer of the present invention may be used, for example in microelectronics.
摘要翻译：在例如SiC的基板（4）上形成高氧敏感性的硅层（2）。层（2）具有4×3的表面结构。以基本均匀的方式将硅层（2）沉积在基板（4）的表面上。本发明的高氧敏感性硅层可以用于例如微电子学中。

4. 发明授权

US06274234B1 Very long and highly stable atomic wires, method for making these wires, application in nano-electronics 有权
标题翻译：非常长，高稳定的原子线，制造这些线的方法，应用于纳米电子学
公开(公告)号：US06274234B1
公开(公告)日：2001-08-14
申请号：US09319977
申请日：1999-06-14
申请人： Gérald Dujardin , Andrew Mayne , Fabrice Semond , Patrick Soukiassian
发明人： Gérald Dujardin , Andrew Mayne , Fabrice Semond , Patrick Soukiassian
IPC分类号： H01L2104
CPC分类号： H01L21/02 , B82Y10/00 , C30B29/36 , C30B29/605 , C30B33/00 , H01L51/0595 , Y10S977/712 , Y10S977/762 , Y10T428/24917 , Y10T428/265
摘要： Atomic wires of great length and great stability are formed on the surface of a SiC substrate as straight chains of dimers of an element chosen from amongst SiC and C. In order to produce same, layers of the element are formed on the surface and the assembly is constructed by means of annealings of the surface provided with the layers. The resulting wires have application to nanoelectronics.
摘要翻译：在SiC衬底的表面上形成长度大且稳定性好的原子线，作为从SiC和C中选择的元素的二聚体的直链。为了制造相同的元件，在表面上形成元件层通过提供有层的表面的退火构成。所得到的电线应用于纳米电子学。

5. 发明授权

US08906784B2 Graphene epitaxied on SiC, with an open band gap and mobility comparable to standard graphene with zero band gap 有权
标题翻译：石墨烯在SiC上表现，开放带隙和迁移率与具有零带隙的标准石墨烯相当
公开(公告)号：US08906784B2
公开(公告)日：2014-12-09
申请号：US13508343
申请日：2010-11-09
申请人： Shirley Chiang , Hanna Enriquez , Hamid Oughaddou , Patrick Soukiassian , Antonio Tejeda Gala , Sébastien Vizzini
发明人： Shirley Chiang , Hanna Enriquez , Hamid Oughaddou , Patrick Soukiassian , Antonio Tejeda Gala , Sébastien Vizzini
IPC分类号： H01L21/335 , H01L21/66 , H01L21/02 , B82Y40/00
CPC分类号： H01L22/12 , B82Y40/00 , H01L21/02378 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/02516 , H01L21/02527 , H01L21/02664 , H01L22/00
摘要： A method of manufacturing a modified structure comprising a semiconducting modified graphene layer on a substrate, comprising the subsequent following steps: supply of an initial structure comprising at least one substrate, formation of a graphene layer on the substrate, hydrogenation of the initial structure by exposure to atomic hydrogen, characterized in that the hydrogenation step of the graphene layer is done with an exposure dose between 100 and 4000 Langmuirs, and forms a modified graphene layer.
摘要翻译：一种在衬底上制造包含半导体改性石墨烯层的改性结构的方法，包括随后的以下步骤：提供包括至少一个衬底的初始结构，在衬底上形成石墨烯层，通过曝光氢化初始结构其特征在于石墨烯层的氢化步骤以100至4000兰缪尔之间的曝光剂量进行，并形成改性的石墨烯层。

6. 发明申请

US20080193635A1 Anti-Reflecting Coatings for Solar Batteries and Method for the Production Thereof 审中-公开
标题翻译：太阳能电池防反射涂料及其制造方法
公开(公告)号：US20080193635A1
公开(公告)日：2008-08-14
申请号：US11628471
申请日：2005-06-01
申请人： Vladimir Aroutiounian , Khachatur Martirosyan Avan-Arindj , Patrick Soukiassian
发明人： Vladimir Aroutiounian , Khachatur Martirosyan Avan-Arindj , Patrick Soukiassian
IPC分类号： B05D5/12 , G02B5/20
CPC分类号： H01L31/02168 , G02B1/113 , Y02E10/50
摘要： The invention relates to an anti-reflecting coating (20) comprising a combined inner coating (21), made of anti-reflecting silicon, and outer coating (22) made of carbon in the form of an amorphous diamond which is essentially non-porous and essentially devoid of foreign species. The invention also relates to a method for the production of an anti-reflecting coating and to the use thereof as a coating for a solar batter (10). The coating is less likely to deteriorate with time and can improve the spectral domain of efficient conversion of radiation.
摘要翻译：本发明涉及一种防反射涂层（20），其包括由抗反射硅制成的组合内涂层（21）和由非晶金刚石形式的碳制成的外涂层（22），其基本上是无孔的基本上没有外来物种。本发明还涉及制备抗反射涂层的方法及其作为太阳能糊料（10）的涂层的用途。涂层不太可能随时间劣化，并且可以改善辐射的有效转化的光谱域。

7. 发明授权

US4900710A Process of depositing an alkali metal layer onto the surface of an oxide superconductor 失效
标题翻译：在氧化物超导体的表面上沉积碱金属层的工艺
公开(公告)号：US4900710A
公开(公告)日：1990-02-13
申请号：US266553
申请日：1988-11-03
申请人： Patrick Soukiassian , Robert V. Kasowski
发明人： Patrick Soukiassian , Robert V. Kasowski
IPC分类号： C23C14/08 , C23C14/18 , H01L39/24
CPC分类号： H01L39/247 , C23C14/087 , C23C14/18
摘要： This invention relates to a process for improving the properties of metal oxide superconductors said process comprising deposition an alkali metal layer having a thickness of less than about three monolayers onto the surface of an oxide superconductor by evaporation.
摘要翻译：本发明涉及一种改善金属氧化物超导体的性能的方法，所述方法包括通过蒸发将厚度小于约三个单层的碱金属层沉积到氧化物超导体的表面上。

8. 发明申请

US20100012949A1 SUBSTRATE, IN PARTICULAR MADE OF SILICON CARBIDE, COATED WITH A THIN STOICHIOMETRIC FILM OF SILICON NITRIDE, FOR MAKING ELECTRONIC COMPONENTS, AND METHOD FOR OBTAINING SUCH A FILM 审中-公开
标题翻译：用于制备电子元件的硅氮化硅薄膜包覆硅碳化物的衬底以及用于获得这种薄膜的方法
公开(公告)号：US20100012949A1
公开(公告)日：2010-01-21
申请号：US11988284
申请日：2006-07-04
申请人： Patrick Soukiassian
发明人： Patrick Soukiassian
IPC分类号： H01L29/24 , H01L21/31
CPC分类号： H01L21/049 , H01L29/1608 , H01L29/518
摘要： Substrate, in particular in silicon carbide, covered by a thin film of stoichiometric silicon nitride, for the manufacture of electronic components and method for obtaining said film.To obtain the film on the substrate (1) in the presence of at least one nitrogen gas, the substrate is covered with a film (2) of a material that is permeable to said gas and the film of silicon nitride is capable of forming at the interface between the substrate and the film of the material. The invention applies for example to microelectronics.
摘要翻译：基板，特别是碳化硅，由化学计量的氮化硅薄膜覆盖，用于制造电子部件和获得所述膜的方法。为了在存在至少一种氮气的情况下在基板（1）上获得薄膜，用可渗透所述气体的材料的膜（2）覆盖基板，并且氮化硅膜能够形成在衬底和材料膜之间的界面。本发明例如适用于微电子学。

9. 发明申请

US20050211970A1 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects 审中-公开
标题翻译：在半导体表面上形成的金属纳米物体，以及制造所述纳米物体的方法
公开(公告)号：US20050211970A1
公开(公告)日：2005-09-29
申请号：US10520647
申请日：2003-07-04
申请人： Marie D'Angelo , Victor Aristov , Patrick Soukiassian
发明人： Marie D'Angelo , Victor Aristov , Patrick Soukiassian
IPC分类号： B82B1/00 , B82B3/00 , C23C14/04 , C30B23/00 , C30B33/00 , H01L21/04 , H01L29/04 , H01L29/06 , H01L29/15 , H01L29/24 , H01L31/072 , H01L31/0328
CPC分类号： C23C14/04 , B82Y10/00 , B82Y30/00 , C30B23/00 , C30B29/02 , C30B29/605 , C30B33/00 , H01L21/0445 , H01L29/045 , H01L29/1608
摘要： Metallic nano-objects, formed on surfaces of semiconductors, and a process for manufacturing these nano-objects. The invention is applicable in nano-electronics and for example provides a means of obtaining nano-objects (4) by depositing a metal on a prepared surface (2) of cubic SiC.
摘要翻译：在半导体表面上形成的金属纳米物体，以及制造这些纳米物体的方法。本发明可应用于纳米电子学中，并且例如提供了通过在准备好的立方体SiC表面（2）上沉积金属来获得纳米物体（4）的方法。

10. 发明授权

US4735921A Nitridation of silicon and other semiconductors using alkali metal catalysts 失效
标题翻译：使用碱金属催化剂对硅和其他半导体进行氮化
公开(公告)号：US4735921A
公开(公告)日：1988-04-05
申请号：US55738
申请日：1987-05-29
申请人： Patrick Soukiassian
发明人： Patrick Soukiassian
IPC分类号： H01L21/318 , H01L21/363
CPC分类号： H01L21/3185 , Y10S148/016 , Y10S438/903
摘要： Nitride layers are formed on semiconductor substrates utilizing alkali metals as catalysts. The surface of the semiconductor substrate first has a thin layer of an alkali metal deposited thereon and then is exposed to nitrogen from a nitrogen source at temperatures and pressures sufficient to grow a nitride layer, which will generally occur at lower temperatures than required for nitride formation by conventional processes. The surface is then annealed and the catalyst removed by heating at moderate temperatures, desorbing the catalyst and leaving a nitride layer on the surface of the substrate which is uncontaminated by the alkali metal catalyst. The process is particularly suited to the formation of nitride layers on silicon utilizing essentially a monolayer of the alkali metal such as sodium. After formation of the nitride, heating of the substrate drives off essentially all of the catalyst at temperatures sufficiently low that the silicon substrate is not impaired for further processing steps, such as the formation of microelectronic devices.
摘要翻译：使用碱金属作为催化剂在半导体基板上形成氮化物层。半导体衬底的表面首先具有沉积在其上的碱金属薄层，然后在足以生长氮化物层的温度和压力下从氮源暴露于氮气，氮化物层通常发生在低于氮化物形成所需的温度通过常规方法。然后将表面退火，并通过在中等温度下加热除去催化剂，解吸催化剂并在碱性金属催化剂未被污染的基材表面上留下氮化物层。该方法特别适用于在硅上形成氮化物层，其基本上使用碱金属如钠的单层。在形成氮化物之后，在足够低的温度下，基板的加热基本上驱除了所有催化剂，使得硅衬底不受损用于诸如形成微电子器件的进一步的处理步骤。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式