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1. 发明授权

US5942952A VCO with multiple negative differential resistance devices 失效
标题翻译： VCO具有多个负差分电阻器件
公开(公告)号：US5942952A
公开(公告)日：1999-08-24
申请号：US903081
申请日：1997-07-30
申请人： Vijay K. Nair , Nada El-Zein , Kumar Shiralagi , George N. Maracas , Herbert Goronkin
发明人： Vijay K. Nair , Nada El-Zein , Kumar Shiralagi , George N. Maracas , Herbert Goronkin
IPC分类号： H01L27/06 , H01L29/88 , H03B1/00 , H03B7/06 , H03B7/14
CPC分类号： H03B7/06 , H01L27/0605 , H01L29/882 , H03B2200/0062 , H03B2201/02 , H03B7/143
摘要： A VCO includes a transistor having a plurality of negative differential resistance devices coupled in series to the source terminal of the transistor, with each of the devices having a negative differential resistance operating region. Biasing circuits are coupled to the drain and gate terminals along with operating voltages which set the oscillator to operating in a negative differential resistance region of at least one of the negative differential resistance devices so that oscillations of a selected frequency are produced at an output terminal. The transistor, the plurality of N devices, the DC biasing circuits, and the operating voltages are connected so that the oscillator negative differential resistance operating region is greater than N times as wide as each of the device negative differential operating regions individually.
摘要翻译： VCO包括具有与晶体管的源极端子串联耦合的多个负差分电阻器件的晶体管，其中每个器件具有负的差分电阻工作区域。偏置电路耦合到漏极和栅极端子以及操作电压，其工作电压将振荡器设置为在负差分电阻器件中的至少一个的负差分电阻区域中工作，使得在输出端子处产生选定频率的振荡。连接晶体管，多个N器件，DC偏置电路和工作电压，使得振荡器负差分电阻工作区域分别大于每个器件负差分工作区域的N倍。

2. 发明授权

US5939941A High efficiency power amplifier using HITFET driver circuit 失效
标题翻译：高效率功率放大器采用HITFET驱动电路
公开(公告)号：US5939941A
公开(公告)日：1999-08-17
申请号：US937775
申请日：1997-09-25
申请人： Vijay K. Nair , George N. Maracas , Herbert Goronkin
发明人： Vijay K. Nair , George N. Maracas , Herbert Goronkin
IPC分类号： H01L27/06 , H01L29/778 , H01L29/88 , H03F3/193 , H03F3/217 , H03F3/16
CPC分类号： H03F3/193 , H01L27/0605 , H01L29/7783 , H01L29/882
摘要： A high efficiency power amplifier includes an integrated circuit with a heterojunction interband tunneling field effect transistor (HITFET) amplifier coupled to receive high frequency (into the GHz) RF signals. The HITFET amplifier is constructed to receive the RF signal with a given frequency at the input terminal and to produce a substantially square wave signal at the given frequency at an output terminal in response to the RF signal applied to the input terminal. The gate of a switching FET connected as a class E amplifier is coupled to the output of the HITFET for receiving the square wave signal and an impedance matching output circuit is coupled to the drain of the switching FET.
摘要翻译：高效率功率放大器包括具有耦合以接收高频（GHz）RF信号的异质结带间隧道场效应晶体管（HITFET）放大器的集成电路。 HITFET放大器被构造为响应于施加到输入端子的RF信号，在输入端子处以给定的频率在输入端子处接收RF信号并且在输出端子处以给定频率产生基本上方波的信号。作为E级放大器连接的开关FET的栅极耦合到HITFET的输出端，用于接收方波信号，阻抗匹配输出电路耦合到开关FET的漏极。

3. 发明授权

US06623945B1 System and method for microwave cell lysing of small samples 有权
标题翻译：小样品微波裂解系统及方法
公开(公告)号：US06623945B1
公开(公告)日：2003-09-23
申请号：US09397691
申请日：1999-09-16
申请人： Vijay K. Nair , Herbert Goronkin
发明人： Vijay K. Nair , Herbert Goronkin
IPC分类号： C12N1300
CPC分类号： H05B6/806 , C12N1/066 , C12N13/00
摘要： Efficient cell lysis in small samples, i.e., samples less than one milliliter, is achieved by exposing the sample to microwave radiation in the frequency range of 18 to 26 GHz. The sample containing cells is supported in a wave-guide cavity, and a microwave source provides microwave radiation to the input port of the wave-guide cavity. A computer controls the frequency and source power level of the microwave radiation produced by the microwave source. The computer also monitors the input power level of the microwave radiation at the input port by means of an input power measuring instrument, the output power level at the output port by means of an output power measuring instrument, and the temperature of the sample by means of a thermocouple. In this way, the computer can control the operating parameters to achieve efficient cell lysis.
摘要翻译：通过将样品暴露于18至26GHz的频率范围内的微波辐射，可以实现小样品（即样品小于1毫升）的高效细胞裂解。含有电池的样品被支撑在波导腔中，并且微波源向波导腔的输入端口提供微波辐射。计算机控制由微波源产生的微波辐射的频率和源功率电平。计算机还通过输入功率测量仪器监视输入端口处的微波辐射的输入功率电平，通过输出功率测量仪器输出端口处的输出功率电平，以及样品的温度的热电偶。以这种方式，计算机可以控制操作参数以实现有效的细胞裂解。

4. 发明授权

US5482875A Method for forming a linear heterojunction field effect transistor 失效
标题翻译：用于形成线性异质结场效应晶体管的方法
公开(公告)号：US5482875A
公开(公告)日：1996-01-09
申请号：US229266
申请日：1994-04-18
申请人： Rimantas L. Vaitkus , Saied N. Tehrani , Vijay K. Nair , Herbert Goronkin
发明人： Rimantas L. Vaitkus , Saied N. Tehrani , Vijay K. Nair , Herbert Goronkin
IPC分类号： H01L29/812 , H01L21/338 , H01L29/08 , H01L29/10 , H01L29/778 , H01L29/80 , H01L21/335
CPC分类号： H01L29/7783 , H01L29/0891 , H01L29/1029 , Y10S148/072
摘要： A low power heterojunction field effect transistor (10, 30, 50, 60) capable of operating at low drain currents while having a low intermodulation distortion. A channel restriction region (9, 38, 51) is formed between the gate electrodes (24, 41, 69) and the drain electrodes (25, 46, 65). The channel restriction region (9, 38, 51) depletes the channel layer (13, 33) thereby constricting a channel and lowering a drain saturation current. The channel restriction region (9, 38, 51) may be used to set a desired drain saturation current such that a second derivative of the transconductance with respect to the gate-source voltage is approximately zero and a first derivative of the transconductance with respect to the gate-source voltage is, approximately, a relative maximum at the desired operating point.
摘要翻译：低功率异质结场效应晶体管（10,30,50,60）能够以低漏电流工作，同时具有低的互调失真。在栅极（24,41,69）和漏极（25,46,65）之间形成沟道限制区（9,38,51）。信道限制区域（9,38,51）耗尽信道层（13,33），从而限制信道并降低漏极饱和电流。通道限制区域（9,38,51）可以用于设置所需的漏极饱和电流，使得相对于栅极 - 源极电压的跨导的二次导数近似为零，并且跨导的第一导数相对于栅极源极电压大约在所需工作点处的相对最大值。

5. 发明授权

US5304825A Linear heterojunction field effect transistor 失效
标题翻译：线性异质结场效应晶体管
公开(公告)号：US5304825A
公开(公告)日：1994-04-19
申请号：US932526
申请日：1992-08-20
申请人： Rimantas L. Vaitkus , Saied N. Tehrani , Vijay K. Nair , Herbert Goronkin
发明人： Rimantas L. Vaitkus , Saied N. Tehrani , Vijay K. Nair , Herbert Goronkin
IPC分类号： H01L29/812 , H01L21/338 , H01L29/08 , H01L29/10 , H01L29/778 , H01L29/80 , H01L31/072 , H01L31/0328 , H01L31/0336 , H01L31/109
CPC分类号： H01L29/7783 , H01L29/0891 , H01L29/1029 , Y10S148/072
摘要： A low power heterojunction field effect transistor (10, 30, 50, 60) capable of operating at low drain currents while having a low intermodulation distortion. A channel restriction region (9, 38, 51) is formed between the gate electrodes (24, 41, 69) and the drain electrodes (25, 46, 65). The channel restriction region (9, 38, 51) depletes the channel layer (13, 33) thereby constricting a channel and lowering a drain saturation current. The channel restriction region (9, 38, 51) may be used to set a desired drain saturation current such that a second derivative of the transconductance with respect to the gate-source voltage is approximately zero and a first derivative of the transconductance with respect to the gate-source voltage is, approximately, a relative maximum at the desired operating point.
摘要翻译：低功率异质结场效应晶体管（10,30,50,60）能够以低漏电流工作，同时具有低的互调失真。在栅极（24,41,69）和漏极（25,46,65）之间形成沟道限制区（9,38,51）。信道限制区域（9,38,51）耗尽信道层（13,33），从而限制信道并降低漏极饱和电流。通道限制区域（9,38,51）可以用于设置所需的漏极饱和电流，使得相对于栅极 - 源极电压的跨导的二次导数近似为零，并且跨导的第一导数相对于栅极源极电压大约在所需工作点处的相对最大值。

6. 发明申请

US20140293529A1 Method Apparatus and Material for Radio Frequency Passives and Antennas 有权
标题翻译：射频无源和天线的方法装置和材料
公开(公告)号：US20140293529A1
公开(公告)日：2014-10-02
申请号：US13853977
申请日：2013-03-29
申请人： Vijay K. Nair , Chuan Hu , Shawna M. Liff , Larry E. Mosley
发明人： Vijay K. Nair , Chuan Hu , Shawna M. Liff , Larry E. Mosley
IPC分类号： H01Q1/22 , H01L23/04 , G06F1/16
CPC分类号： H01Q7/06 , G06F1/16 , H01F1/0054 , H01L21/565 , H01L21/568 , H01L23/295 , H01L23/3121 , H01L23/3128 , H01L23/66 , H01L24/17 , H01L24/19 , H01L24/96 , H01L2223/6672 , H01L2223/6677 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/16227 , H01L2224/24137 , H01L2224/24195 , H01L2924/01029 , H01L2924/05442 , H01L2924/12042 , H01L2924/1421 , H01L2924/15311 , H01L2924/15321 , H01L2924/181 , H01L2924/186 , H01L2924/19011 , H01L2924/19042 , H01L2924/19102 , H01L2924/19105 , H01Q1/2283 , H01Q1/2291 , H01Q23/00 , H01L2924/00
摘要： A method apparatus and material are described for radio frequency passives and antennas. In one example, an electronic component has a synthesized magnetic nanocomposite material with aligned magnetic domains, a conductor embedded within the nanocomposite material, and contact pads extending through the nanocomposite material to connect to the conductor.
摘要翻译：无线电频率无源和天线描述了一种方法装置和材料。在一个示例中，电子部件具有具有对准磁畴的合成磁性纳米复合材料，嵌入在纳米复合材料内的导体以及延伸穿过纳米复合材料以连接到导体的接触垫。

7. 发明申请

US20080238804A1 MULTI-BAND HIGHLY ISOLATED PLANAR ANTENNAS INTEGRATED WITH FRONT-END MODULES FOR MOBILE APPLICATIONS 有权
标题翻译：与移动应用的前端模块集成的多带高分离平面天线
公开(公告)号：US20080238804A1
公开(公告)日：2008-10-02
申请号：US11693013
申请日：2007-03-29
申请人： Seong-youp Suh , Vijay K. Nair , Debabani Choudhury
发明人： Seong-youp Suh , Vijay K. Nair , Debabani Choudhury
IPC分类号： H01Q1/50 , H01Q13/10 , H01Q9/16
CPC分类号： H01Q13/10 , H01Q1/243 , H01Q1/50 , H01Q9/16 , H01Q23/00
摘要： An embodiment of the present invention provides an apparatus, comprising a multi-band highly isolated planar antenna directly integrated with a front-end module (FEM).
摘要翻译：本发明的实施例提供一种装置，包括与前端模块（FEM）直接集成的多频带高度隔离的平面天线。

8. 发明申请

US20080150830A1 Multi-band tunable frequency reconfigurable antennas using higher order resonances 有权
标题翻译：使用更高阶谐振的多频带可调谐频率可重构天线
公开(公告)号：US20080150830A1
公开(公告)日：2008-06-26
申请号：US11644741
申请日：2006-12-22
申请人： Helen K. Pan , Songnan Yang , Debabani Choudhury , Vijay K. Nair
发明人： Helen K. Pan , Songnan Yang , Debabani Choudhury , Vijay K. Nair
IPC分类号： H01Q3/24
CPC分类号： H01Q9/145 , H01Q5/00 , H01Q5/357
摘要： A wireless device using natural higher order harmonics on multi-band reconfigurable antenna designs where the antenna higher order resonance is used to build a multi-band to multi-band frequency reconfigurable antenna.
摘要翻译：在多频带可重构天线设计中使用自然高阶谐波的无线设备，其中天线高阶谐振用于构建多频带到多频带可重新配置的天线。

9. 发明授权

US5506544A Bias circuit for depletion mode field effect transistors 失效
标题翻译：用于耗尽型场效应晶体管的偏置电路
公开(公告)号：US5506544A
公开(公告)日：1996-04-09
申请号：US419500
申请日：1995-04-10
申请人： Joseph Staudinger , Joel D. Birkeland , Vijay K. Nair
发明人： Joseph Staudinger , Joel D. Birkeland , Vijay K. Nair
IPC分类号： H03F1/30 , H03F3/16
CPC分类号： H03F1/301
摘要： An amplifier (10) receives a bias voltage to the gate of a depletion mode field effect transistor (12). In one embodiment, a bias circuit (20) offsets (22) the bias voltage from a power supply potential (26) to maintain substantially constant drain current over a range of threshold voltages (34,36,38) caused by process and temperature variation. In an alternate embodiment, a transistor (58) in the bias circuit (50) provides an incremental current flow to compensate the bias voltage of the MESFET for variation in threshold voltages. The bias circuit is applicable to other depletion mode field effect transistor circuits having a negative threshold voltage.
摘要翻译：放大器（10）将偏置电压接收到耗尽型场效应晶体管（12）的栅极。在一个实施例中，偏置电路（20）偏置来自电源电位（26）的偏置电压，以在由过程和温度变化引起的阈值电压（34,36,38）的范围内维持基本上恒定的漏极电流。在替代实施例中，偏置电路（50）中的晶体管（58）提供增量电流以补偿MESFET的偏置电压以用于阈值电压的变化。偏置电路可应用于具有负阈值电压的其它耗尽型场效应晶体管电路。

10. 发明授权

US09461355B2 Method apparatus and material for radio frequency passives and antennas 有权
标题翻译：用于射频无源和天线的方法装置和材料
公开(公告)号：US09461355B2
公开(公告)日：2016-10-04
申请号：US13853977
申请日：2013-03-29
申请人： Vijay K. Nair , Chuan Hu , Shawna M. Liff , Larry E. Mosley
发明人： Vijay K. Nair , Chuan Hu , Shawna M. Liff , Larry E. Mosley
IPC分类号： H01Q1/38 , H01Q1/22 , G06F1/16 , H01Q23/00 , H01L23/00 , H01L23/29 , H01L23/66 , H01L21/56 , H01L23/31
CPC分类号： H01Q7/06 , G06F1/16 , H01F1/0054 , H01L21/565 , H01L21/568 , H01L23/295 , H01L23/3121 , H01L23/3128 , H01L23/66 , H01L24/17 , H01L24/19 , H01L24/96 , H01L2223/6672 , H01L2223/6677 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/16227 , H01L2224/24137 , H01L2224/24195 , H01L2924/01029 , H01L2924/05442 , H01L2924/12042 , H01L2924/1421 , H01L2924/15311 , H01L2924/15321 , H01L2924/181 , H01L2924/186 , H01L2924/19011 , H01L2924/19042 , H01L2924/19102 , H01L2924/19105 , H01Q1/2283 , H01Q1/2291 , H01Q23/00 , H01L2924/00
摘要： A method apparatus and material are described for radio frequency passives and antennas. In one example, an electronic component has a synthesized magnetic nanocomposite material with aligned magnetic domains, a conductor embedded within the nanocomposite material, and contact pads extending through the nanocomposite material to connect to the conductor.
摘要翻译：无线电频率无源和天线描述了一种方法装置和材料。在一个示例中，电子部件具有具有对准磁畴的合成磁性纳米复合材料，嵌入在纳米复合材料内的导体以及延伸穿过纳米复合材料以连接到导体的接触垫。

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