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1. 发明授权

US08969969B2 High threshold voltage NMOS transistors for low power IC technology 有权
公开(公告)号：US08969969B2
公开(公告)日：2015-03-03
申请号：US12727312
申请日：2010-03-19
申请人： Victor W. C. Chan , Narasimhulu Kanike , Huiling Shang , Varadarajan Vidya , Jun Yuan , Roger Allen Booth, Jr.
发明人： Victor W. C. Chan , Narasimhulu Kanike , Huiling Shang , Varadarajan Vidya , Jun Yuan , Roger Allen Booth, Jr.
IPC分类号： H01L27/092 , H01L21/8234 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823412
摘要： Transistors exhibiting different electrical characteristics such as different switching threshold voltage or different leakage characteristics are formed on the same chip or wafer by selectively removing a film or layer which can serve as an out-diffusion sink for an impurity region such as a halo implant and out-diffusing an impurity such as boron into the out-diffusion sink, leaving the impurity region substantially intact where the out-diffusion sink has been removed. In forming CMOS integrated circuits, such a process allows substantially optimal design for both low-leakage and low threshold transistors and allows a mask and additional associated processes to be eliminated, particularly where a tensile film is employed to increase electron mobility since the tensile film can be removed from selected NMOS transistors concurrently with removal of the tensile film from PMOS transistors.

2. 发明授权

US08053352B2 Method and mesh reference structures for implementing Z-axis cross-talk reduction through copper sputtering onto mesh reference planes 有权
标题翻译：用于通过铜溅射实现Z轴串扰减少的网格参考平面的方法和网格参考结构
公开(公告)号：US08053352B2
公开(公告)日：2011-11-08
申请号：US11250043
申请日：2005-10-13
申请人： Roger Allen Booth, Jr. , Matthew Stephen Doyle
发明人： Roger Allen Booth, Jr. , Matthew Stephen Doyle
IPC分类号： H01L21/4763
CPC分类号： H05K1/0224 , H05K1/0253 , H05K3/16 , H05K2201/09681 , H05K2201/09736
摘要： A method and mesh reference applications are provided for implementing Z-axis cross-talk reduction. A mesh reference plane including a grid of mesh traces is formed with the mesh traces having selected thickness and width dimensions effective for reference current-flow distribution. An electrically conductive coating is deposited to fill the mesh electrical holes in the mesh reference plane to reduce cross-talk, substantially without affecting mechanical flexibility.
摘要翻译：提供了一种实现Z轴串扰降低的方法和网格参考应用。包括网格轨迹的网格的网格参考平面形成为具有选定的厚度和宽度尺寸的网格轨迹对于参考电流分布有效。沉积导电涂层以填充网格参考平面中的网格电孔，以减少串扰，基本上不影响机械灵活性。

3. 发明授权

US07785979B2 Integrated circuits comprising resistors having different sheet resistances and methods of fabricating the same 有权
标题翻译：包括具有不同薄片电阻的电阻器的集成电路及其制造方法
公开(公告)号：US07785979B2
公开(公告)日：2010-08-31
申请号：US12173407
申请日：2008-07-15
申请人： Roger Allen Booth, Jr. , Kangguo Cheng , Terence B. Hook
发明人： Roger Allen Booth, Jr. , Kangguo Cheng , Terence B. Hook
IPC分类号： H01L21/324 , H01L21/8238
CPC分类号： H01L27/0629 , H01L28/20
摘要： The fabrication of integrated circuits comprising resistors having the same structure but different sheet resistances is disclosed herein. In one embodiment, a method of fabricating an integrated circuit comprises: concurrently forming a first resistor laterally spaced from a second resistor above or within a semiconductor substrate, the first and second resistors comprising a doped semiconductive material; depositing a dopant receiving material across the first and second resistors and the semiconductor substrate; removing the dopant receiving material from upon the first resistor while retaining the dopant receiving material upon the second resistor; and annealing the first and second resistors to cause a first sheet resistance of the first resistor to be different from a second sheet resistance of the second resistor.
摘要翻译：本文公开了包括具有相同结构但具有不同薄层电阻的电阻器的集成电路的制造。在一个实施例中，一种制造集成电路的方法包括：与半导体衬底之上或之内的第二电阻器横向隔开的第一电阻器同时形成，所述第一和第二电阻器包括掺杂的半导体材料; 在第一和第二电阻器和半导体衬底上沉积掺杂剂接收材料; 在所述第一电阻器上移除所述掺杂剂接收材料，同时将所述掺杂剂接收材料保持在所述第二电阻器上; 以及使所述第一和第二电阻器退火以使所述第一电阻器的第一薄层电阻与所述第二电阻器的第二薄层电阻不同。

4. 发明授权

US07566629B2 Patterned silicon-on-insulator layers and methods for forming the same 失效
标题翻译：图案化的绝缘体上硅层及其形成方法
公开(公告)号：US07566629B2
公开(公告)日：2009-07-28
申请号：US11155029
申请日：2005-06-16
申请人： Roger Allen Booth, Jr. , Louis Lu-Chen Hsu , Jack A. Mandelman , William R. Tonti
发明人： Roger Allen Booth, Jr. , Louis Lu-Chen Hsu , Jack A. Mandelman , William R. Tonti
IPC分类号： H01L21/76
CPC分类号： H01L21/76243
摘要： In an aspect, a method is provided for forming a silicon-on-insulator (SOI) layer. The method includes the steps of (1) providing a silicon substrate; (2) selectively implanting the silicon substrate with oxygen using a low implant energy to form an ultra-thin patterned seed layer; and (3) employing the ultra-thin patterned seed layer to form a patterned SOI layer on the silicon substrate. Numerous other aspects are provided.
摘要翻译：在一方面，提供了一种用于形成绝缘体上硅（SOI）层的方法。该方法包括以下步骤：（1）提供硅衬底; （2）使用低注入能量用氧选择性地注入硅衬底以形成超薄图案种子层; 和（3）使用超薄图案种子层在硅衬底上形成图案化SOI层。提供了许多其他方面。

5. 发明授权

US07299144B2 Method and apparatus for implementing automatic-calibration of TDR probing system 失效
标题翻译：实现TDR探测系统自动校准的方法和装置
公开(公告)号：US07299144B2
公开(公告)日：2007-11-20
申请号：US11304141
申请日：2005-12-15
申请人： Roger Allen Booth, Jr. , Matthew Stephen Doyle , Lynn Robert Landin , Thomas W. Liang , Ankur Kanu Patel
发明人： Roger Allen Booth, Jr. , Matthew Stephen Doyle , Lynn Robert Landin , Thomas W. Liang , Ankur Kanu Patel
IPC分类号： G01D18/00
CPC分类号： G01R35/00
摘要： A method and apparatus are provided for implementing automatic-calibration of a Time Domain Reflectometer (TDR) probing apparatus. A calibration procedure is performed automatically each time a TDR probe is moved from a device under test (DUT). A current calibration TDR waveform is obtained and compared with a reference calibration TDR waveform, checking for deviations between the current and reference measurements. If a deviation is detected, then the user is notified and calibration is failed.
摘要翻译：提供了一种用于实现时域反射计（TDR）探测装置的自动校准的方法和装置。每次TDR探针从被测设备（DUT）移动时，都会自动执行校准程序。获得当前的校准TDR波形并与参考校准TDR波形进行比较，检查电流和参考测量之间的偏差。如果检测到偏差，则通知用户并校准失败。

6. 发明授权

US07659599B2 Patterned silicon-on-insulator layers and methods for forming the same 有权
标题翻译：图案化的绝缘体上硅层及其形成方法
公开(公告)号：US07659599B2
公开(公告)日：2010-02-09
申请号：US12049258
申请日：2008-03-14
申请人： Roger Allen Booth, Jr. , Louis Lu-Chen Hsu , Jack A. Mandelman , William R. Tonti
发明人： Roger Allen Booth, Jr. , Louis Lu-Chen Hsu , Jack A. Mandelman , William R. Tonti
IPC分类号： H01L29/00
CPC分类号： H01L21/76243
摘要： In an aspect, a method is provided for forming a silicon-on-insulator (SOI) layer. The method includes the steps of (1) providing a silicon substrate; (2) selectively implanting the silicon substrate with oxygen using a low implant energy to form an ultra-thin patterned seed layer; and (3) employing the ultra-thin patterned seed layer to form a patterned SOI layer on the silicon substrate. Numerous other aspects are provided.
摘要翻译：在一方面，提供了一种用于形成绝缘体上硅（SOI）层的方法。该方法包括以下步骤：（1）提供硅衬底; （2）使用低注入能量用氧选择性地注入硅衬底以形成超薄图案种子层; 和（3）使用超薄图案种子层在硅衬底上形成图案化SOI层。提供了许多其他方面。

7. 发明授权

US07517764B2 Bulk FinFET device 有权
标题翻译：散装FinFET器件
公开(公告)号：US07517764B2
公开(公告)日：2009-04-14
申请号：US11427486
申请日：2006-06-29
申请人： Roger Allen Booth, Jr. , William Paul Hovis , Jack Allan Mandelman
发明人： Roger Allen Booth, Jr. , William Paul Hovis , Jack Allan Mandelman
IPC分类号： H01L21/336
CPC分类号： H01L29/7851 , H01L29/66795
摘要： A finFET structure and a method of fabricating the finFET structure. The method includes: forming a silicon fin on a top surface of a silicon substrate; forming a gate dielectric on opposite sidewalls of the fin; forming a gate electrode over a channel region of the fin, the gate electrode in direct physical contact with the gate dielectric layer on the opposite sidewalls of the fin; forming a first source/drain in the fin on a first side of the channel region and forming a second source/drain in the fin on a second side of the channel region; removing a portion of the substrate from under at least a portion of the first and second source/drains to create a void; and filling the void with a dielectric material. The structure includes a body contact between the silicon body of the finFET and the substrate.
摘要翻译： finFET结构和finFET结构的制造方法。该方法包括：在硅衬底的顶表面上形成硅翅片; 在翅片的相对侧壁上形成栅电介质; 在鳍片的沟道区域上形成栅电极，栅电极与翅片的相对侧壁上的栅介电层直接物理接触; 在所述通道区域的第一侧上在所述翅片中形成第一源极/漏极，并且在所述沟道区域的第二侧上在所述鳍片中形成第二源极/漏极; 从第一和第二源/排水沟的至少一部分下方去除衬底的一部分以产生空隙; 并用介电材料填充空隙。该结构包括在finFET的硅体和衬底之间的体接触。

8. 发明授权

US07353130B2 Method and apparatus for implementing automatic-calibration of TDR probing system 有权
标题翻译：实现TDR探测系统自动校准的方法和装置
公开(公告)号：US07353130B2
公开(公告)日：2008-04-01
申请号：US11781372
申请日：2007-07-23
申请人： Roger Allen Booth, Jr. , Matthew Stephen Doyle , Lynn Robert Landin , Thomas W. Liang , Ankur Kanu Patel
发明人： Roger Allen Booth, Jr. , Matthew Stephen Doyle , Lynn Robert Landin , Thomas W. Liang , Ankur Kanu Patel
IPC分类号： G01R35/00
CPC分类号： G01R35/00
摘要： A method and apparatus are provided for implementing automatic-calibration of a Time Domain Reflectometer (TDR) probing apparatus. A calibration procedure is performed automatically each time a TDR probe is moved from a device under test (DUT). A current calibration TDR waveform is obtained and compared with a reference calibration TDR waveform, checking for deviations between the current and reference measurements. If a deviation is detected, then the user is notified and calibration is failed.
摘要翻译：提供了一种用于实现时域反射计（TDR）探测装置的自动校准的方法和装置。每次TDR探针从被测设备（DUT）移动时，都会自动执行校准程序。获得当前的校准TDR波形并与参考校准TDR波形进行比较，检查电流和参考测量之间的偏差。如果检测到偏差，则通知用户并校准失败。

9. 发明授权

US08642440B2 Capacitor with deep trench ion implantation 失效
标题翻译：具有深沟槽离子注入的电容器
公开(公告)号：US08642440B2
公开(公告)日：2014-02-04
申请号：US13279877
申请日：2011-10-24
申请人： Chengwen Pei , Roger Allen Booth, Jr. , Herbert Lei Ho , Naoyoshi Kusaba
发明人： Chengwen Pei , Roger Allen Booth, Jr. , Herbert Lei Ho , Naoyoshi Kusaba
IPC分类号： H01L21/20
CPC分类号： H01L29/945 , H01L29/66181
摘要： An improved semiconductor capacitor and method of fabrication is disclosed. Embodiments utilize a deep trench which is then processed by performing a pre-amorphous implant on the trench interior to transform the interior surface of the trench to amorphous silicon which eliminates the depletion region that can degrade capacitor performance.
摘要翻译：公开了一种改进的半导体电容器和制造方法。实施例利用深沟槽，然后通过在沟槽内部执行预非晶体植入来将沟槽的内表面转变为非晶硅来处理，以消除可能降低电容器性能的耗尽区。

10. 发明授权

US08384145B2 Non-volatile memory device using hot-carrier injection 有权
标题翻译：使用热载流子注入的非易失性存储器件
公开(公告)号：US08384145B2
公开(公告)日：2013-02-26
申请号：US12692923
申请日：2010-01-25
申请人： Roger Allen Booth, Jr. , Kangguo Cheng , Chandrasekharan Kothandaraman , Chengwen Pei
发明人： Roger Allen Booth, Jr. , Kangguo Cheng , Chandrasekharan Kothandaraman , Chengwen Pei
IPC分类号： H01L29/76
CPC分类号： H01L29/7923 , H01L29/66833
摘要： Each of a hot-carrier non-volatile memory device and a method for fabricating the hot carrier non-volatile memory device is predicated upon a semiconductor structure and related method that includes a metal oxide semiconductor field effect transistor structure. The semiconductor structure and related method include at least one of: (1) a spacer that comprises a dielectric material having a dielectric constant greater than 7 (for enhanced hot carrier derived charge capture and retention); and (2) a drain region that comprises a semiconductor material that has a narrower bandgap than a bandgap of a semiconductor material from which is comprised a channel region (for enhanced impact ionization and charged carrier generation).
摘要翻译：热载体非易失性存储器件和用于制造热载体非易失性存储器件的方法中的每一种都取决于包括金属氧化物半导体场效应晶体管结构的半导体结构和相关方法。半导体结构和相关方法包括以下中的至少一个：（1）包括介电常数大于7的介电材料的间隔物（用于增强热载体导电的电荷捕获和保留）; 和（2）包括半导体材料的漏极区，该半导体材料具有比半导体材料的带隙窄的带隙，其包括沟道区（用于增强的冲击电离和带电载流子的生成）。

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