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1. 发明授权

US07153783B2 Materials with enhanced properties for shallow trench isolation/premetal dielectric applications 失效
公开(公告)号：US07153783B2
公开(公告)日：2006-12-26
申请号：US10886247
申请日：2004-07-07
申请人： Victor Lu , Lei Jin , Arlene J. Suedmeyer , Denis H. Endisch , Paul G. Apen , Brian J. Daniels , Deling Zhou , Ananth Naman
发明人： Victor Lu , Lei Jin , Arlene J. Suedmeyer , Denis H. Endisch , Paul G. Apen , Brian J. Daniels , Deling Zhou , Ananth Naman
IPC分类号： H01L21/31
CPC分类号： H01L21/02118 , H01L21/02318 , H01L21/3105 , H01L21/316
摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.

2. 发明授权

US08475666B2 Method for making toughening agent materials 有权
标题翻译：制造增韧剂材料的方法
公开(公告)号：US08475666B2
公开(公告)日：2013-07-02
申请号：US10940686
申请日：2004-09-15
申请人： Teresa A. Ramos , Robert R. Roth , Anil S. Bhanap , Paul G. Apen , Denis H. Endisch , Brian J. Daniels , Ananth Naman , Nancy Iwamoto , Roger Y. Leung
发明人： Teresa A. Ramos , Robert R. Roth , Anil S. Bhanap , Paul G. Apen , Denis H. Endisch , Brian J. Daniels , Ananth Naman , Nancy Iwamoto , Roger Y. Leung
IPC分类号： H01L21/30
CPC分类号： H01L21/02216 , H01L21/02126 , H01L21/316 , H01L21/31695 , H01L21/76814 , H01L21/76826
摘要： A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.
摘要翻译：一种增韧剂组合物，用于在施加到所述膜时增加有机硅酸盐玻璃介电膜的疏水性。它包括能够通过甲硅烷基化将有机硅酸盐玻璃介电膜的硅烷醇部分烷基化或芳基化的组分和选自胺，鎓化合物和碱金属氢氧化物的活化剂。

3. 发明授权

US07678712B2 Vapor phase treatment of dielectric materials 失效
标题翻译：介电材料的气相处理
公开(公告)号：US07678712B2
公开(公告)日：2010-03-16
申请号：US11086010
申请日：2005-03-22
申请人： Anil S. Bhanap , Robert R. Roth , Kikue S. Burnham , Brian J. Daniels , Denis H. Endisch , Ilan Golecki
发明人： Anil S. Bhanap , Robert R. Roth , Kikue S. Burnham , Brian J. Daniels , Denis H. Endisch , Ilan Golecki
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/56 , H01L21/02203 , H01L21/02216 , H01L21/02219 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/02359 , H01L21/3105 , H01L21/76814
摘要： The invention concerns a method for applying a surface modification agent composition for organosilicate glass dielectric films. More particularly, the invention pertains to a method for treating a silicate or organosilicate dielectric film on a substrate, which film either comprises silanol moieties or has had at least some previously present carbon containing moieties removed therefrom. The treatment adds carbon containing moieties to the film and/or seals surface pores of the film, when the film is porous.
摘要翻译：本发明涉及一种用于涂覆有机硅酸盐玻璃介电薄膜的表面改性剂组合物的方法。更具体地说，本发明涉及一种在底物上处理硅酸盐或有机硅酸盐电介质膜的方法，该膜包含硅烷醇部分或已从其中除去至少一些先前存在的含碳部分。当膜是多孔的时，该处理向膜中加入含碳部分并且/或密封膜的表面孔。

4. 发明授权

US06565920B1 Edge bead removal for spin-on materials containing low volatility solvents fusing carbon dioxide cleaning 失效
标题翻译：包含低挥发性溶剂的旋涂材料的边缘珠粒去除融合二氧化碳清洗
公开(公告)号：US06565920B1
公开(公告)日：2003-05-20
申请号：US09591181
申请日：2000-06-08
申请人： Denis H. Endisch
发明人： Denis H. Endisch
IPC分类号： B05D312
CPC分类号： H01L21/02096 , B08B7/0092 , H01L21/02087 , H01L21/02164 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31105 , Y10S134/902
摘要： Methods are provided for removing edge beads from spin-on films. A spin-on film is removed from a region of a surface of a spin-coated substrate adjacent to an edge of the surface by spinning the spin-coated substrate, expanding a fluid through a nozzle to form a cryogenic aerosol stream, and directing the cryogenic aerosol stream against the spin-on film in the region as the substrate spins. In another aspect of the invention, a film is formed on a surface of a substrate by dispensing a liquid composition onto the surface, spinning the substrate to distribute the liquid composition to form a substantially uniform film on the surface, expanding a fluid through a nozzle to form a cryogenic aerosol stream, and directing the cryogenic aerosol stream against the film in a region of the surface adjacent to an edge of the surface as the substrate spins. The film may include an alkoxysilane and a low volatility solvent. The fluid may consists essentially of liquid carbon dioxide. A spin-on film containing low volatility solvents does not grow back into the region from which the film was removed, the edge bead removal process time can be reduced to less than about 10 seconds, and the volume of waste solvent is reduced.
摘要翻译：提供了用于从旋涂膜上去除边缘珠的方法。通过纺丝旋涂底物，通过纺丝旋涂底物，使旋转涂布的基材表面的邻近表面的边缘的区域从旋涂膜的表面上移除，从而使流体膨胀以形成低温气溶胶流，并引导当底物旋转时，该区域中的旋涂膜的低温气溶胶流。在本发明的另一方面，通过将液体组合物分配到表面上，在基材的表面上形成膜，纺丝基材以分散液体组合物以在表面上形成基本均匀的膜，通过喷嘴膨胀流体以形成低温气溶胶流，并且当衬底旋转时，将低温气溶胶流引向邻近表面边缘的表面的区域中的膜。该膜可以包括烷氧基硅烷和低挥发性溶剂。流体可以基本上由液体二氧化碳组成。含有低挥发性溶剂的旋涂膜不会生长回去除膜的区域，边缘珠去除处理时间可以减少到小于约10秒，并且废溶剂的体积减少。

5. 发明授权

US06815371B2 Edge bead removal for spin-on materials containing low volatility solvents using carbon dioxide cleaning 失效
标题翻译：使用二氧化碳清洗的包含低挥发性溶剂的旋涂材料的边缘珠粒去除
公开(公告)号：US06815371B2
公开(公告)日：2004-11-09
申请号：US10376569
申请日：2003-02-26
申请人： Denis H. Endisch
发明人： Denis H. Endisch
IPC分类号： H01L2131
CPC分类号： H01L21/6708 , B08B7/0092 , G03F7/168 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3105 , H01L21/31111 , H01L21/3122 , H01L21/316
摘要： Methods are provided for removing edge beads from spin-on films. A spin-on film is removed from a region of a surface of a spin-coated substrate adjacent to an edge of the surface by spinning the spin-coated substrate, expanding a fluid through a nozzle to form a cryogenic aerosol stream, and directing the cryogenic aerosol stream against the spin-on film in the region as the substrate spins. In another aspect of the invention, a film is formed on a surface of a substrate by dispensing a liquid composition onto the surface, spinning the substrate to distribute the liquid composition to form a substantially uniform film on the surface, expanding a fluid through a nozzle to form a cryogenic aerosol stream, and directing the cryogenic aerosol stream against the film in a region of the surface adjacent to an edge of the surface as the substrate spins. The film may include an alkoxysilane and a low volatility solvent. The fluid may consists essentially of liquid carbon dioxide. A spin-on film containing low volatility solvents does not grow back into the region from which the film was removed, the edge bead removal process time can be reduced to less than about 10 seconds, and the volume of waste solvent is reduced.

6. 发明授权

US6140254A Edge bead removal for nanoporous dielectric silica coatings 失效
标题翻译：纳米多孔电介质二氧化硅涂层的边缘珠去除
公开(公告)号：US6140254A
公开(公告)日：2000-10-31
申请号：US156220
申请日：1998-09-18
申请人： Denis H. Endisch , Hui-Jung Wu , Teresa Ramos
发明人： Denis H. Endisch , Hui-Jung Wu , Teresa Ramos
IPC分类号： H01L21/316 , H01L21/469
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02307 , H01L21/02337 , H01L21/02343 , H01L21/31695
摘要： A process for forming a nanoporous dielectric silica coating on a surface of a substrate. The process includes spin-depositing alkoxysilane composition onto a surface of a substrate; spin depositing a surface hydrophobizing agent or a solvent onto an edge portion of the substrate to thereby remove the alkoxysilane composition from that area; and then curing the alkoxysilane composition to form a nanoporous dielectric silica coating. In another embodiment, an alkoxysilane composition layer is deposited onto a surface of a substrate. Then a solvent for the alkoxysilane substantially removes a portion of the alkoxysilane layer on the edge portion of the surface. This results in a transfer or cascading of a quantity of the alkoxysilane from a region adjacent to the edge portion to form a relatively thinner layer of the alkoxysilane onto the edge portion of the substrate surface. Then the relatively thinner alkoxysilane layer is removed prior to curing the alkoxysilane.
摘要翻译：一种在衬底的表面上形成纳米多孔介电二氧化硅涂层的方法。该方法包括将烷氧基硅烷组合物旋涂到基材的表面上; 将表面疏水化剂或溶剂旋转沉积到基材的边缘部分上，从而从该区域除去烷氧基硅烷组合物; 然后固化该烷氧基硅烷组合物以形成纳米多孔电介质二氧化硅涂层。在另一个实施方案中，烷氧基硅烷组合物层沉积在基材的表面上。然后，用于烷氧基硅烷的溶剂基本上除去了表面的边缘部分上的烷氧基硅烷层的一部分。这导致一定数量的烷氧基硅烷从与边缘部分相邻的区域转移或层叠，以在衬底表面的边缘部分上形成相对较薄的烷氧基硅烷层。然后在固化烷氧基硅烷之前除去相对较薄的烷氧基硅烷层。

7. 发明申请

US20130124116A1 SYSTEMS AND METHODS FOR PREDICTING THE LIFETIME OF AN ELECTROMECHANICAL DEVICE 审中-公开
标题翻译：用于预测电气设备寿命的系统和方法
公开(公告)号：US20130124116A1
公开(公告)日：2013-05-16
申请号：US13296988
申请日：2011-11-15
申请人： Yan Du , Kostadin D. Djordjev , Denis H. Endisch , Wilhelmus A. de Groot , Daniel Felnhofer
发明人： Yan Du , Kostadin D. Djordjev , Denis H. Endisch , Wilhelmus A. de Groot , Daniel Felnhofer
IPC分类号： G06F19/00
CPC分类号： G09G3/3466 , G05B23/0283 , G09G3/006 , G09G2320/048 , G09G2320/0693
摘要： This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for estimating the lifetime or remaining lifetime of an electromechanical systems (EMS) device. In one aspect, a parameter of the device, such as a release or actuation voltage, is measured. The parameter measurement is used in conjunction with a model of the aging of the device according to the measured parameter to determine an estimated remaining lifetime of the device.
摘要翻译：本公开提供了系统，方法和装置，包括在计算机存储介质上编码的计算机程序，用于估计机电系统（EMS）设备的寿命或剩余寿命。在一个方面，测量设备的参数，例如释放或致动电压。参数测量与设备的老化模型结合使用，根据测量参数确定设备的估计剩余寿命。

8. 发明授权

US06797607B2 Contact planarization using nanoporous silica materials 失效
标题翻译：使用纳米多孔二氧化硅材料的接触平面化
公开(公告)号：US06797607B2
公开(公告)日：2004-09-28
申请号：US10146007
申请日：2001-10-26
申请人： Denis H. Endisch , James S. Drage
发明人： Denis H. Endisch , James S. Drage
IPC分类号： H01L214763
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/31051
摘要： A process for forming a substantially planarized nanoporous dielectric silica coating on a substrate suitable for preparing a semiconductor device, and semiconductor devices produced by the methods of the invention. The process includes the steps of applying a composition that includes at least one silicon-based dielectric precursor to a substrate, and then, (a) gelling or aging the applied coating, (b) contacting the coating with a planarization object with sufficient pressure to transfer a planar impression to the coating without substantially impairing formation of desired nanometer-scale pore structure, (c) separating the planarized coating from the planarization object, (d) curing said planarized coating; wherein steps (a)-(d) are conducted in any one of the following sequences: (a), (b), (c) and (d); (a), (d), (b) and (c); (b), (a), (d) and (c); and (b), (c), (a) and (d).
摘要翻译：在适于制备半导体器件的衬底上形成基本上平坦化的纳米多孔介电二氧化硅涂层的方法，以及通过本发明的方法制造的半导体器件。该方法包括以下步骤：将包含至少一种硅基电介质前体的组合物施加到基底上，然后（a）使所涂覆的涂层凝胶化或老化，（b）使涂层与平坦化物体接触足够的压力，将平面印模转移到涂层，而不会基本上损害所需的纳米尺度孔结构的形成，（c）将平坦化涂层与平坦化物体分离，（d）固化所述平坦化涂层;其中步骤（a） - （d）（a），（d），（b）和（c）;（b），（a），（d））和（c）; 和（b），（c），（a）和（d）。

9. 发明授权

US06589889B2 Contact planarization using nanoporous silica materials 失效
标题翻译：使用纳米多孔二氧化硅材料的接触平面化
公开(公告)号：US06589889B2
公开(公告)日：2003-07-08
申请号：US09392413
申请日：1999-09-09
申请人： Denis H. Endisch , James S. Drage
发明人： Denis H. Endisch , James S. Drage
IPC分类号： H01L2131
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/31051
摘要： A process for forming a substantially planarized nanoporous dielectric silica coating on a substrate suitable for preparing a semiconductor device, and semiconductor devices produced by the methods of the invention. The process includes the steps of applying a composition that includes at least one silicon-based dielectric precursor to a substrate, and then, (a) gelling or aging the applied coating, (b) contacting the coating with a planarization object with sufficient pressure to transfer a planar impression to the coating without substantially impairing formation of desired nanometer-scale pore structure, (c) separating the planarized coating from the planarization object, (d) curing said planarized coating; wherein steps (a)-(d) are conducted in any one of the following sequences: (a), (b), (c) and (d); (a), (d), (b) and (c); (b), (a), (d) and (c); and (b), (c), (a) and (d).
摘要翻译：在适于制备半导体器件的衬底上形成基本上平坦化的纳米多孔介电二氧化硅涂层的方法，以及通过本发明的方法制造的半导体器件。该方法包括以下步骤：将包含至少一种硅基电介质前体的组合物施加到基底上，然后（a）使所涂覆的涂层凝胶化或老化，（b）使涂层与平坦化物体接触足够的压力，将平面印模转移到涂层，而不会基本上损害所需的纳米尺度孔结构的形成，（c）将平面化涂层与平坦化物体分离，（d）固化所述平坦化涂层;其中步骤（a） - （d）（a），（d），（b）和（c）;（b），（a），（d））和（c）; 和（b），（c），（a）和（d）。

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