专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130234072A1 WET-CHEMICAL SYSTEMS AND METHODS FOR PRODUCING BLACK SILICON SUBSTRATES 有权
标题翻译：用于生产黑色硅衬底的湿化学系统和方法
公开(公告)号：US20130234072A1
公开(公告)日：2013-09-12
申请号：US13825541
申请日：2010-11-11
申请人： Vernon Yost , Hao-Chih Yuan , Matthew Page
发明人： Vernon Yost , Hao-Chih Yuan , Matthew Page
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , H01B1/00 , H01L21/67086 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.
摘要翻译：制造黑色硅衬底的湿法化学方法。该方法包括将单晶硅晶片浸泡在预定体积的稀无机化合物溶液中。衬底与蚀刻剂溶液组合，其形成均匀的贵金属纳米颗粒诱导硅晶片的黑蚀刻，导致动力学稳定的纳米颗粒。该方法包括与具有等体积乙腈/乙酸：氢氟酸：过氧化氢的蚀刻剂溶液组合。

2. 发明授权

US09034216B2 Wet-chemical systems and methods for producing black silicon substrates 有权
标题翻译：湿化学系统和生产黑硅衬底的方法
公开(公告)号：US09034216B2
公开(公告)日：2015-05-19
申请号：US13825541
申请日：2010-11-11
申请人： Vernon Yost , Hao-Chih Yuan , Matthew Page
发明人： Vernon Yost , Hao-Chih Yuan , Matthew Page
IPC分类号： H01B1/02 , H01B1/22 , H01L21/306 , H01L21/67 , H01L31/18 , H01B1/00
CPC分类号： H01L21/30604 , H01B1/00 , H01L21/67086 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.
摘要翻译：制造黑色硅衬底的湿法化学方法。该方法包括将单晶硅晶片浸泡在预定体积的稀无机化合物溶液中。衬底与蚀刻剂溶液组合，其形成均匀的贵金属纳米颗粒诱导硅晶片的黑蚀刻，导致动力学稳定的纳米颗粒。该方法包括与具有等体积乙腈/乙酸：氢氟酸：过氧化氢的蚀刻剂溶液组合。

3. 发明授权

US08075792B1 Nanoparticle-based etching of silicon surfaces 有权
标题翻译：硅表面的纳米粒子蚀刻
公开(公告)号：US08075792B1
公开(公告)日：2011-12-13
申请号：US12053372
申请日：2008-03-21
申请人： Howard Branz , Anna Duda , David S. Ginley , Vernon Yost , Daniel Meier , James S. Ward
发明人： Howard Branz , Anna Duda , David S. Ginley , Vernon Yost , Daniel Meier , James S. Ward
IPC分类号： C03C15/00
CPC分类号： H01L31/02363 , Y02E10/50 , Y10T428/24917
摘要： A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.
摘要翻译：一种使硅表面（116）纹理化以减少用于太阳能电池的硅晶片（110）的反射率的方法（300）。方法（300）包括用一定体积的蚀刻溶液（124）填充（330,340）容器（122）以覆盖晶片或衬底（112）的硅表面116）。蚀刻溶液（124）由催化纳米材料（140）和氧化剂 - 蚀刻剂溶液（146）组成。催化纳米材料（140）可以包括金或银纳米颗粒或贵金属纳米颗粒，其各自可以是胶体溶液。氧化剂 - 蚀刻剂溶液（146）包括诸如氢氟酸的蚀刻剂（142）和氧化剂（144），例如过氧化氢。进行蚀刻（350）一段时间，包括搅拌或搅拌蚀刻液（124）。可以选择蚀刻时间，使得蚀刻的硅表面（116）具有小于约15％的反射率，例如在350至1000纳米波长范围内的1至10％。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式