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    • 5. 发明授权
    • Simple means for measuring the offset induced by photo-conductive FETs in a solid state X-ray detector
    • 用于测量由固态X射线检测器中的导电FET引起的偏移的简单方法
    • US06400798B1
    • 2002-06-04
    • US09629694
    • 2000-08-01
    • Richard LeparmentierScott PetrickJohn Boudry
    • Richard LeparmentierScott PetrickJohn Boudry
    • H05G164
    • G01T1/20G01T1/2018
    • A preferred embodiment of the present invention provides a method and apparatus for correcting the offset induced by Field Effect Transistor (FET) photo-conductive effects in a solid state X-ray detector. The method and apparatus include reading out twice as many rows (scan lines) as actually exist in the X-ray detector. The additional rows may be read out between the actuation of “real” scan lines on the X-ray detector. The additional row times may be used to measure the “signal” induced by FET photo-conductivity. In a preferred embodiment, the “real” rows may be actuated during odd lines, and even lines will be used to measure the signal induced by FET photo-conductivity. To correct for the offset induced by photo-conductive FETs, an even row signal may be subtracted from the preceding odd row signal. The correction for the offset induced by photo-conductive FETs may occur in addition to normal offset correction.
    • 本发明的优选实施例提供了一种用于校正由固态X射线检测器中的场效应晶体管(FET)光导效应引起的偏移的方法和装置。 该方法和装置包括读出实际存在于X射线检测器中的行(扫描线)的两倍。 可以在X射线检测器上的“实际”扫描线的致动之间读出附加行。 附加行时间可以用于测量由FET光电导率引起的“信号”。 在优选实施例中,可以在奇数行期间激活“实际”行,并且甚至行将用于测量由FET光电导率引起的信号。 为了校正由导电FET引起的偏移,偶数行信号可以从前一个奇数行信号中减去。 除了正常偏移校正之外,可能发生由导电FET引起的偏移的校正。