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    • 1. 发明申请
    • APPARATUS AND METHOD FOR MASS ANALYZED ION BEAM
    • 大分析离子束的装置和方法
    • US20150357167A1
    • 2015-12-10
    • US14299681
    • 2014-06-09
    • Varian Semiconductor Equipment Associates, Inc.
    • W. Davis LeeSvetlana RadovanovPeter F. Kurunczi
    • H01J37/32
    • H01J37/32678H01J37/3056H01J37/321H01J37/32192H01J37/32412H01J37/32422
    • In one embodiment, a processing apparatus includes a plasma chamber configured to house a plasma comprising first ions and second ions. The apparatus may further include a resonance RF power supply to generate a drive signal that is coupled to the plasma chamber, the drive signal having a drive frequency. The apparatus may also include a magnet assembly to generate a magnetic field in the plasma chamber, wherein the magnet assembly is configured to generate a first magnetic field strength that imparts a first cyclotron frequency for the first ions that matches the drive frequency of the drive signal, wherein the first magnetic field strength imparts a second cyclotron frequency for the second ions that does not match the drive frequency of the drive signal, and wherein the first ions are selectively driven into a chamber wall of the plasma chamber.
    • 在一个实施例中,处理设备包括等离子体室,其被配置为容纳包含第一离子和第二离子的等离子体。 该装置还可以包括谐振RF电源以产生耦合到等离子体室的驱动信号,该驱动信号具有驱动频率。 该装置还可以包括磁体组件以在等离子体室中产生磁场,其中磁体组件被配置为产生第一磁场强度,该第一磁场强度赋予与驱动信号的驱动频率匹配的第一离子的第一回旋加速器频率 ,其中所述第一磁场强度对于与所述驱动信号的驱动频率不匹配的所述第二离子施加第二回旋加速器频率,并且其中所述第一离子被选择性地驱动到所述等离子体室的室壁中。
    • 4. 发明申请
    • APPARATUS AND METHOD TO CONTROL AN ION BEAM
    • 装置和控制离子束的方法
    • US20160172159A1
    • 2016-06-16
    • US14572016
    • 2014-12-16
    • Varian Semiconductor Equipment Associates, Inc.
    • James S. BuffEdward W. BellW. Davis Lee
    • H01J37/317H01J37/147
    • H01J37/3171H01J37/04H01J37/304
    • An apparatus to control a ribbon ion beam. The apparatus may include a coil assembly comprising a plurality of electromagnetic coils configured to generate a magnetic field proximate the ribbon beam, the magnetic field extending in a first direction that forms a non-zero angle with respect to a direction of propagation of the ribbon ion beam; a current source assembly configured to supply current to the coil assembly; and a controller configured to control the current source assembly to send at least one dithering current signal to the coil assembly responsive to a beam current measurement of the ribbon ion beam, wherein the at least one dithering current signal generates a fluctuation in magnetic field strength of the magnetic field.
    • 一种控制带状离子束的装置。 该装置可以包括线圈组件,该线圈组件包括多个电磁线圈,其被配置为在带状束附近产生磁场,该磁场沿相对于带状离子的传播方向形成非零角度的第一方向延伸 光束; 电流源组件,被配置为向所述线圈组件提供电流; 以及控制器,其被配置为响应于所述带状离子束的束电流测量来控制所述电流源组件向所述线圈组件发送至少一个抖动电流信号,其中所述至少一个抖动电流信号产生磁场强度的波动 磁场。
    • 9. 发明授权
    • Apparatus and method for mass analyzed ion beam
    • 用于质量分析离子束的装置和方法
    • US09536712B2
    • 2017-01-03
    • US14299681
    • 2014-06-09
    • Varian Semiconductor Equipment Associates, Inc.
    • W. Davis LeeSvetlana RadovanovPeter F. Kurunczi
    • H01J37/32H01J37/305
    • H01J37/32678H01J37/3056H01J37/321H01J37/32192H01J37/32412H01J37/32422
    • In one embodiment, a processing apparatus includes a plasma chamber configured to house a plasma comprising first ions and second ions. The apparatus may further include a resonance RF power supply to generate a drive signal that is coupled to the plasma chamber, the drive signal having a drive frequency. The apparatus may also include a magnet assembly to generate a magnetic field in the plasma chamber, wherein the magnet assembly is configured to generate a first magnetic field strength that imparts a first cyclotron frequency for the first ions that matches the drive frequency of the drive signal, wherein the first magnetic field strength imparts a second cyclotron frequency for the second ions that does not match the drive frequency of the drive signal, and wherein the first ions are selectively driven into a chamber wall of the plasma chamber.
    • 在一个实施例中,处理设备包括等离子体室,其被配置为容纳包含第一离子和第二离子的等离子体。 该装置还可以包括谐振RF电源以产生耦合到等离子体室的驱动信号,该驱动信号具有驱动频率。 该装置还可以包括磁体组件以在等离子体室中产生磁场,其中磁体组件被配置为产生第一磁场强度,该第一磁场强度赋予与驱动信号的驱动频率匹配的第一离子的第一回旋加速器频率 ,其中所述第一磁场强度对于与所述驱动信号的驱动频率不匹配的所述第二离子施加第二回旋加速器频率,并且其中所述第一离子被选择性地驱动到所述等离子体室的室壁中。