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1. 发明申请

US20130256841A1 VIA PLUGS 有权
标题翻译：威盛系列
公开(公告)号：US20130256841A1
公开(公告)日：2013-10-03
申请号：US13431583
申请日：2012-03-27
申请人： Van Mieczkowski , Helmut Hagleitner , William T. Pulz
发明人： Van Mieczkowski , Helmut Hagleitner , William T. Pulz
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/481 , H01L24/05 , H01L24/29 , H01L24/32 , H01L2224/04026 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684 , H01L2224/29144 , H01L2924/0132 , H01L2924/10158 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/13064 , H01L2924/00 , H01L2924/0105 , H01L2924/01079 , H01L2924/01032 , H01L2924/01014
摘要： The present disclosure relates to providing via plugs in vias of a semiconductor material. The via plugs may be formed of a polymer, such as a polyimide, that can withstand subsequent soldering and operating temperatures. The via plugs effectively fill the vias to prevent the vias from being filled substantially with solder during a subsequent soldering processes.
摘要翻译：本公开涉及在半导体材料的通孔中提供通孔塞。通孔插塞可以由可以承受随后的焊接和操作温度的聚合物（例如聚酰亚胺）形成。通孔塞有效地填充通孔，以防止在随后的焊接过程中通孔基本上被焊料填充。

2. 发明授权

US10020244B2 Polymer via plugs with high thermal integrity 有权
公开(公告)号：US10020244B2
公开(公告)日：2018-07-10
申请号：US13431583
申请日：2012-03-27
申请人： Van Mieczkowski , Helmut Hagleitner , William T. Pulz
发明人： Van Mieczkowski , Helmut Hagleitner , William T. Pulz
IPC分类号： H01L23/48 , H01L23/00
CPC分类号： H01L23/481 , H01L24/05 , H01L24/29 , H01L24/32 , H01L2224/04026 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684 , H01L2224/29144 , H01L2924/0132 , H01L2924/10158 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/13064 , H01L2924/00 , H01L2924/0105 , H01L2924/01079 , H01L2924/01032 , H01L2924/01014
摘要： The present disclosure relates to providing via plugs in vias of a semiconductor material. The via plugs may be formed of a polymer, such as a polyimide, that can withstand subsequent soldering and operating temperatures. The via plugs effectively fill the vias to prevent the vias from being filled substantially with solder during a subsequent soldering processes.

3. 发明授权

US08907350B2 Semiconductor devices having improved adhesion and methods of fabricating the same 有权
标题翻译：具有改进的附着力的半导体器件及其制造方法
公开(公告)号：US08907350B2
公开(公告)日：2014-12-09
申请号：US12769307
申请日：2010-04-28
申请人： Van Mieczkowski , Helmut Hagleitner
发明人： Van Mieczkowski , Helmut Hagleitner
IPC分类号： H01L29/15 , H01L29/778 , H01L29/423 , H01L29/66 , H01L29/06 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/0649 , H01L29/2003 , H01L29/42316 , H01L29/66462
摘要： Wide bandgap semiconductor devices are fabricated by providing a wide bandgap semiconductor layer, providing a plurality of recesses in the wide bandgap semiconductor layer, and providing a metal gate contact in the plurality of recesses. A protective layer may be provided on the wide bandgap semiconductor layer, the protective layer having a first opening extending therethrough, a dielectric layer may be provided on the protective layer, the dielectric layer having a second opening extending therethrough that is narrower than the first opening, and a gate contact may be provided in the first and second openings. The metal gate contact may be provided to include a barrier metal layer in the plurality of recesses, and a current spreading layer on the barrier metal layer remote from the wide bandgap semiconductor layer. Related devices and fabrication methods are also discussed.
摘要翻译：宽带隙半导体器件通过提供宽带隙半导体层制造，在宽带隙半导体层中提供多个凹槽，并在多个凹槽中提供金属栅极接触。可以在宽带隙半导体层上设置保护层，保护层具有延伸穿过其的第一开口，电介质层可以设置在保护层上，电介质层具有延伸穿过的第二开口，该第二开口窄于第一开口并且可以在第一和第二开口中设置栅极接触。可以提供金属栅极接触以在多个凹部中包括阻挡金属层，以及在远离宽带隙半导体层的阻挡金属层上的电流扩散层。还讨论了相关设备和制造方法。

4. 发明授权

US08896122B2 Semiconductor devices having gates including oxidized nickel 有权
标题翻译：具有包括氧化镍的栅极的半导体器件
公开(公告)号：US08896122B2
公开(公告)日：2014-11-25
申请号：US12778334
申请日：2010-05-12
申请人： Van Mieczkowski , Helmut Hagleitner , Kevin Haberern
发明人： Van Mieczkowski , Helmut Hagleitner , Kevin Haberern
IPC分类号： H01L21/335 , H01L29/778 , H01L29/24 , H01L29/80 , H01L29/66 , H01L29/47 , H01L29/812 , H01L29/872 , H01L29/16 , H01L29/20
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/2003 , H01L29/47 , H01L29/475 , H01L29/66871 , H01L29/7786 , H01L29/812 , H01L29/872
摘要： Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide bandgap semiconductor layer including a nickel oxide (NiO) layer. Related methods of fabricating devices are also provided herein.
摘要翻译：提供肖特基势垒半导体器件，其包括宽带隙半导体层和宽带隙半导体层上的栅极。栅极包括在包括氧化镍（NiO）层的宽带隙半导体层上的金属层。本文还提供了相关制造装置的方法。

5. 发明申请

US20120115319A1 CONTACT PAD 有权
标题翻译：接触垫
公开(公告)号：US20120115319A1
公开(公告)日：2012-05-10
申请号：US12943517
申请日：2010-11-10
申请人： Van Mieczkowski , Zoltan Ring , Jason Gurganus , Helmut Hagleitner
发明人： Van Mieczkowski , Zoltan Ring , Jason Gurganus , Helmut Hagleitner
IPC分类号： H01L21/329
CPC分类号： H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/02166 , H01L2224/04026 , H01L2224/04042 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05687 , H01L2224/48463 , H01L2924/00014 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01059 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/12032 , H01L2924/1301 , H01L2924/1306 , H01L2224/45099 , H01L2924/00
摘要： The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, which is formed over the device structure for the semiconductor device; a titanium nitride (TiN) barrier layer, which is formed over the adhesion layer; and an overlay layer, which is formed over the barrier layer. At least the titanium nitride (TiN) barrier layer is formed using an evaporation process.
摘要翻译：本公开涉及形成用于半导体器件的多层接触焊盘，其中使用一个或多个薄膜沉积工艺（诸如蒸发工艺）形成接触焊盘的各个层。每个接触焊盘包括形成在用于半导体器件的器件结构上的粘合层; 在粘合层上形成的氮化钛（TiN）阻挡层; 以及覆盖层，其形成在阻挡层上。至少使用蒸镀法形成氮化钛（TiN）阻挡层。

6. 发明申请

US20110278590A1 Semiconductor Devices Having Gates Including Oxidized Nickel and Related Methods of Fabricating the Same 有权
标题翻译：具有包含氧化镍的门的半导体器件及其制造方法
公开(公告)号：US20110278590A1
公开(公告)日：2011-11-17
申请号：US12778334
申请日：2010-05-12
申请人： Van Mieczkowski , Helmut Hagleitner , Kevin Haberern
发明人： Van Mieczkowski , Helmut Hagleitner , Kevin Haberern
IPC分类号： H01L29/778 , H01L29/80 , H01L21/335 , H01L21/338 , H01L29/24 , H01L29/20
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/2003 , H01L29/47 , H01L29/475 , H01L29/66871 , H01L29/7786 , H01L29/812 , H01L29/872
摘要： Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide bandgap semiconductor layer including a nickel oxide (NiO) layer. Related methods of fabricating devices are also provided herein.
摘要翻译：提供肖特基势垒半导体器件，其包括宽带隙半导体层和宽带隙半导体层上的栅极。栅极包括在包括氧化镍（NiO）层的宽带隙半导体层上的金属层。本文还提供了相关制造装置的方法。

7. 发明申请

US20110227089A1 MULTILAYER DIFFUSION BARRIERS FOR WIDE BANDGAP SCHOTTKY BARRIER DEVICES 有权
标题翻译：用于宽带贴片屏障设备的多层扩展障碍
公开(公告)号：US20110227089A1
公开(公告)日：2011-09-22
申请号：US12725812
申请日：2010-03-17
申请人： Van Mieczkowski , Helmut Hagleitner , Zoltan Ring
发明人： Van Mieczkowski , Helmut Hagleitner , Zoltan Ring
IPC分类号： H01L27/095
CPC分类号： H01L29/475 , H01L29/2003 , H01L29/42316 , H01L29/7787
摘要： Semiconductor Schottky barrier devices include a wide bandgap semiconductor layer, a Schottky barrier metal layer on the wide bandgap semiconductor layer and forming a Schottky junction, a current spreading layer on the Schottky barrier metal layer remote from the wide bandgap semiconductor layer and two or more diffusion barrier layers between the current spreading layer and the Schottky barrier metal layer. The first diffusion barrier layer reduces mixing of the current spreading layer and the second diffusion barrier layer at temperatures of the Schottky junction above about 300° C. and the second diffusion barrier layer reduces mixing of the first diffusion barrier layer and the Schottky barrier metal layer at the temperatures of the Schottky junction above about 300° C.
摘要翻译：半导体肖特基势垒器件包括宽带隙半导体层，宽带隙半导体层上的肖特基势垒金属层和形成肖特基结，在远离宽带隙半导体层的肖特基势垒金属层上的电流扩散层和两个或更多个扩散电流扩散层和肖特基势垒金属层之间的阻挡层。第一扩散阻挡层在约300℃以上的肖特基结温度下降低了电流扩散层和第二扩散阻挡层的混合，第二扩散阻挡层减少了第一扩散阻挡层和肖特基势垒金属层的混合在高于约300℃的肖特基结的温度下

8. 发明授权

US09607955B2 Contact pad 有权
公开(公告)号：US09607955B2
公开(公告)日：2017-03-28
申请号：US12943517
申请日：2010-11-10
申请人： Van Mieczkowski , Zoltan Ring , Jason Gurganus , Helmut Hagleitner
发明人： Van Mieczkowski , Zoltan Ring , Jason Gurganus , Helmut Hagleitner
IPC分类号： H01L21/329 , H01L23/00
CPC分类号： H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/02166 , H01L2224/04026 , H01L2224/04042 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05687 , H01L2224/48463 , H01L2924/00014 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01059 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/12032 , H01L2924/1301 , H01L2924/1306 , H01L2224/45099 , H01L2924/00
摘要： The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, which is formed over the device structure for the semiconductor device; a titanium nitride (TiN) barrier layer, which is formed over the adhesion layer; and an overlay layer, which is formed over the barrier layer. At least the titanium nitride (TiN) barrier layer is formed using an evaporation process.

9. 发明授权

US09142631B2 Multilayer diffusion barriers for wide bandgap Schottky barrier devices 有权
标题翻译：用于宽带隙肖特基势垒器件的多层扩散阻挡层
公开(公告)号：US09142631B2
公开(公告)日：2015-09-22
申请号：US12725812
申请日：2010-03-17
申请人： Van Mieczkowski , Helmut Hagleitner , Zoltan Ring
发明人： Van Mieczkowski , Helmut Hagleitner , Zoltan Ring
IPC分类号： H01L27/095 , H01L29/47 , H01L29/423 , H01L29/778 , H01L29/20
CPC分类号： H01L29/475 , H01L29/2003 , H01L29/42316 , H01L29/7787
摘要： Semiconductor Schottky barrier devices include a wide bandgap semiconductor layer, a Schottky barrier metal layer on the wide bandgap semiconductor layer and forming a Schottky junction, a current spreading layer on the Schottky barrier metal layer remote from the wide bandgap semiconductor layer and two or more diffusion barrier layers between the current spreading layer and the Schottky barrier metal layer. The first diffusion barrier layer reduces mixing of the current spreading layer and the second diffusion barrier layer at temperatures of the Schottky junction above about 300° C. and the second diffusion barrier layer reduces mixing of the first diffusion barrier layer and the Schottky barrier metal layer at the temperatures of the Schottky junction above about 300° C.
摘要翻译：半导体肖特基势垒器件包括宽带隙半导体层，宽带隙半导体层上的肖特基势垒金属层和形成肖特基结，在远离宽带隙半导体层的肖特基势垒金属层上的电流扩散层和两个或更多个扩散电流扩散层和肖特基势垒金属层之间的阻挡层。第一扩散阻挡层在约300℃以上的肖特基结温度下降低了电流扩散层和第二扩散阻挡层的混合，第二扩散阻挡层减少了第一扩散阻挡层和肖特基势垒金属层的混合在高于约300℃的肖特基结的温度下

10. 发明申请

US20110266557A1 Semiconductor Devices Having Improved Adhesion and Methods of Fabricating the Same 有权
标题翻译：具有改善粘合性的半导体器件及其制造方法
公开(公告)号：US20110266557A1
公开(公告)日：2011-11-03
申请号：US12769307
申请日：2010-04-28
申请人： Van Mieczkowski , Helmut Hagleitner
发明人： Van Mieczkowski , Helmut Hagleitner
IPC分类号： H01L29/12 , H01L21/335 , H01L21/04 , H01L29/772 , H01L29/24 , H01L29/812
CPC分类号： H01L29/7787 , H01L29/0649 , H01L29/2003 , H01L29/42316 , H01L29/66462
摘要： Wide bandgap semiconductor devices are fabricated by providing a wide bandgap semiconductor layer, providing a plurality of recesses in the wide bandgap semiconductor layer, and providing a metal gate contact in the plurality of recesses. A protective layer may be provided on the wide bandgap semiconductor layer, the protective layer having a first opening extending therethrough, a dielectric layer may be provided on the protective layer, the dielectric layer having a second opening extending therethrough that is narrower than the first opening, and a gate contact may be provided in the first and second openings. The metal gate contact may be provided to include a barrier metal layer in the plurality of recesses, and a current spreading layer on the barrier metal layer remote from the wide bandgap semiconductor layer. Related devices and fabrication methods are also discussed.
摘要翻译：宽带隙半导体器件通过提供宽带隙半导体层制造，在宽带隙半导体层中提供多个凹槽，并在多个凹槽中提供金属栅极接触。可以在宽带隙半导体层上设置保护层，保护层具有延伸穿过其的第一开口，电介质层可以设置在保护层上，电介质层具有延伸穿过的第二开口，该第二开口窄于第一开口并且可以在第一和第二开口中设置栅极接触。可以提供金属栅极接触以在多个凹部中包括阻挡金属层，以及在远离宽带隙半导体层的阻挡金属层上的电流扩散层。还讨论了相关设备和制造方法。

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