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    • 9. 发明申请
    • Solid fuel burner
    • US20190162403A1
    • 2019-05-30
    • US16306560
    • 2017-05-30
    • Dimitar Dimitrov
    • Dimitar Dimitrov
    • F23B30/04F23B60/02F23H15/00F24B13/04F23K3/08F23L9/02
    • Slag (28) is formed during the combustion of solid fuels with a lower ash fusion temperature and covers parts of the solid fuel, prevents complete combustion and blocks the air supply, thereby leading to an interruption of the combustion process. According to the invention, the embers and the fusing ashes are mixed by means of a cleaning comb (22) and are discharged from the burner. The burner consists of rotating grate bars (25) which are arranged parallel to one another within the inner walls (1). The cleaning comb (22) moves between the grate bars (25); upwards between the grate bars (25); in direction of the burner opening; downwards under the grate bars; and finally in the direction of the burner flange (7). When the slag (28) adheres to the rotating grate bars (25), it is scraped off by the cleaning comb (22). The fuel supplied to a funnel (8) slides downwards by the force of gravity, the funnel lid (9) opens, and the fuel is pushed onto the grate bars (25) by the plunger (11). The plunger (11) has at least one opening (15) for secondary air (5) which also provides cooling. A blower (13) blows the ashes fallen through the grate bars (25) through a cut-out section in the burner floor (30) opened by the floor trap (20).
    • 10. 发明授权
    • Non-volatile memory with stray magnetic field compensation
    • 具有杂散磁场补偿的非易失性存储器
    • US08098541B2
    • 2012-01-17
    • US13084774
    • 2011-04-12
    • Dimitar DimitrovOlle Gunnar HeinonenDexin WangHaiwen Xi
    • Dimitar DimitrovOlle Gunnar HeinonenDexin WangHaiwen Xi
    • G11C8/00
    • H01L43/02G11C11/16G11C11/161H01L43/08
    • A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.
    • 一种在非易失性存储单元中的杂散磁场补偿的方法和装置,例如自旋转矩传递随机存取存储器(STRAM)。 在一些实施例中,第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。 具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。 具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。 此外,通过向记录结构施加电流,可将存储单元编程为选定的电阻状态。