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    • 8. 发明授权
    • pFET nonvolatile memory
    • pFET非易失性存储器
    • US07221596B2
    • 2007-05-22
    • US10839985
    • 2004-05-05
    • Alberto PesaventoFrédéric J. BernardJohn D. Hyde
    • Alberto PesaventoFrédéric J. BernardJohn D. Hyde
    • G11C16/06
    • G11C16/0441G11C16/28G11C2216/10H01L27/115H01L29/7883
    • A nonvolatile memory cell is constructed using a floating-gate (FG) pFET Readout Transistor (RT) having its source tied to a power source (Vdd) and its drain providing a current which can be sensed to determine a cell state. The gate of the RT provides for charge/information storage. A control capacitor structure (CCS) having terminals coupled to a first voltage source and the FG and a tunneling capacitor structure (TCS) having terminals coupled to a second voltage source and the FG are utilized in each embodiment. The CCS has much more capacitance than the TCS. Manipulation of the voltages applied to the first voltage source and second voltage source (and Vdd) controls an electric field across the CCS and pFET dielectrics and thus Fowler-Nordheim tunneling of electrons onto and off of the FG, thus controlling the charge on the FG and the information stored thereon.
    • 使用其源极连接到电源(Vdd)的浮栅(FG)pFET读出晶体管(RT)构成非易失性存储单元,其漏极提供可被感测以确定单元状态的电流。 RT的门提供充电/信息存储。 具有耦合到第一电压源的端子和具有耦合到第二电压源和FG的端子的隧道电容器结构(TCS)的控制电容器结构(CCS)在每个实施例中被使用。 CCS具有比TCS多得多的电容。 对施加到第一电压源和第二电压源(和Vdd)的电压的操纵控制跨越CCS和pFET电介质的电场,并且因此Fowler-Nordheim隧道电子进入FG和FG,从而控制FG上的电荷 以及存储在其上的信息。
    • 9. 发明授权
    • Method and apparatus for controlled persistent ID flag for RFID applications
    • 用于RFID应用的受控持续ID标志的方法和装置
    • US07116240B2
    • 2006-10-03
    • US10921758
    • 2004-08-18
    • John D. Hyde
    • John D. Hyde
    • G08B21/00
    • G06K19/0723
    • A Radio-Frequency Identification (RFID) transponder is provided. The RFID transponder may include a basic ID flag circuit having a VDD voltage node, an output voltage node, and a capacitor coupled to the VDD voltage node and the output voltage node to store an ID flag. The persistence duration of the state of the ID flag is controlled by maintaining a charge and leakage circuit. The charge and leakage circuit includes an NMOS device having a source, a drain and a gate, the source node of the NMOS device being coupled to the capacitor and the drain node of the NMOS device being coupled to a first CMOS inverter. The first CMOS inverter is powered by a regulated supply voltage such that the voltage on the capacitor is not dependent on the forward voltage drop of the NMOS device.
    • 提供射频识别(RFID)应答器。 RFID应答器可以包括具有VDD电压节点的基本ID标志电路,输出电压节点和耦合到VDD电压节点的电容器和输出电压节点以存储ID标志。 通过维持充电和泄漏电路来控制ID标志的状态的持续持续时间。 充电和泄漏电路包括具有源极,漏极和栅极的NMOS器件,NMOS器件的源极耦合到电容器,NMOS器件的漏极节点耦合到第一CMOS反相器。 第一个CMOS反相器由稳压电源供电,使得电容上的电压不依赖于NMOS器件的正向压降。