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    • 3. 发明授权
    • Method of producing optically flat surfaces on processed silicon wafers
    • 在加工硅膜上生产光学平面的方法
    • US5160560A
    • 1992-11-03
    • US201809
    • 1988-06-02
    • Murray S. WelkowskyP. K. VasudevPhilip G. ReifNorman W. Goodwin
    • Murray S. WelkowskyP. K. VasudevPhilip G. ReifNorman W. Goodwin
    • B23Q3/15H01L21/302H01L21/304H01L21/306H01L21/683
    • H01L21/6833H01L21/302Y10S148/012Y10S148/135
    • A method for producing optically flat thin semiconductor wafers (12) bonded to a substrate (16). The wafer (12) is bonded without touching the top surface of the wafer (12). Also, the bond is created without the use of pressure. Electrostatic bonding, or contact bonding or both may be employed. After the wafer (12) is bonded, it is then polished to a desired thickness and flatness. After contact bonding and polishing the wafer (12) may then be removed for further processing. The wafer may then be contact bonded to a final substrate (b 34) or electrostatically bonded to a final substrate (42). The contact bonding technique may also be employed as a means for holding the wafer (12) during precise photolithography. The optical flatness achieved permits improved yields over conventional means for securing wafers during photolithography. The electrostatic bonding technique permits extremely thin optically flat silicon wafers to be produced.
    • 一种用于制造结合到基板(16)的光学平坦的薄的半导体晶片(12)的方法。 接合晶片(12)而不接触晶片(12)的顶表面。 此外,债券是在不使用压力的情况下创建的。 可以使用静电粘合或接触粘合或两者。 在晶片(12)接合之后,然后将其抛光至期望的厚度和平坦度。 接触结合和抛光之后,可以移除晶片(12)以便进一步处理。 然后可以将晶片与最终的基板(b 34)接触或静电地结合到最终的基板(42)上。 接触接合技术也可以用作在精确光刻期间保持晶片(12)的手段。 所获得的光学平整度允许相对于用于在光刻期间固定晶片的常规手段提高的产量。 静电接合技术允许制造极薄的光学平坦硅晶片。
    • 4. 发明授权
    • Liquid crystal adaptive optics system
    • 液晶自适应光学系统
    • US4943709A
    • 1990-07-24
    • US350353
    • 1989-05-11
    • Jan GrinbergThomas R. O'Meara, Jr.Murray S. Welkowsky
    • Jan GrinbergThomas R. O'Meara, Jr.Murray S. Welkowsky
    • G01J9/02
    • G01J9/02
    • An adaptive optics system is disclosed which has a phase detector to detect phase distortions acquired by an input beam, and a separate phase adjustor which predistorts a transmission beam so that it is restored to its proper phase during transmission back through the same medium travelled by the input beam. The phase adjustor consists of a liquid crystal mechanism with an area substantially greater than that of the phase detector, thereby permitting high power operation. Liquid crystal pixels in the phase adjustor have dual transistor signal storage circuits which apply operating signals to the pixels without significant decay or flicker. The phase adjustor can be constructed in either a reflective or transmissive mode. Two phase adjustors may be placed in series to enhance response time and/or process an unpolarized beam. A data processor interfaces between the phase detector and phase adjustor. The data processor may include a capability for providing phase adjustment information for a plurality of transmission wavelengths based upon the detected distortion of an input beam at only one of the wavelengths.
    • 公开了一种自适应光学系统,其具有用于检测由输入光束获取的相位失真的相位检测器,以及单独的相位调节器,其预发射发射光束,使得在透射期间通过相同介质返回到其适当的相位 输入光束。 相位调节器由具有比相位检测器的面积大得多的面积的液晶机构构成,由此允许高功率运转。 相位调节器中的液晶像素具有双晶体管信号存储电路,其对像素施加操作信号而没有显着的衰减或闪烁。 相位调节器可以以反射或透射模式构成。 两个相位调节器可以串联放置以增强响应时间和/或处理非偏振光束。 相位检测器和相位调节器之间的数据处理器接口。 数据处理器可以包括基于在仅一个波长处的检测到的输入波束的失真来提供多个发射波长的相位调整信息的能力。
    • 6. 发明授权
    • Electron beam addressed liquid crystal light valve with input sheet
conductor
    • 电子束寻址液晶光阀,带输入片导体
    • US4826293A
    • 1989-05-02
    • US21381
    • 1987-03-03
    • Jan GrinbergNubuo J. KodaPhilip G. ReifWilliam P. BlehaMurray S. WelkowskyArno G. Ledebuhr
    • Jan GrinbergNubuo J. KodaPhilip G. ReifWilliam P. BlehaMurray S. WelkowskyArno G. Ledebuhr
    • G02F1/135G02F1/13G02F1/133G02F1/1333
    • G02F1/133348
    • An electron beam addressed liquid crystal light valve (LCLV) produces an AC voltage across a liquid crystal layer from a single polarity electron beam, and exhibits very high resolution. A thin layer of partially conductive material is deposited on a support membrane on the electron beam side of the liquid crystal. A conductive, electron beam permeable sheet is formed on the back of the partially conductive layer. Electrons from the beam are absorbed by the partially conductive layer, and then flow back out to the conductive sheet to produce an AC voltage prior to the next electron beam scan. The conductive sheet is connected in circuit with a transparent electrode which provides a voltage reference on the readout side of the liquid crystal. The device is designed with electrical parameters that produce a discharge rate from the partially conductive layer fast enough to complete an AC cycle between successive electron beam scans, but slow enough for the liquid crystal to respond and produce an image. A separate mirror can be provided to reflect the readout beam back through the liquid crystal, or the conductive sheet can itself serve as a mirror.
    • 电子束寻址液晶光阀(LCLV)从单极性电子束产生跨液晶层的交流电压,表现出非常高的分辨率。 部分导电材料的薄层沉积在液晶的电子束侧的支撑膜上。 在部分导电层的背面形成导电的电子束透过片。 来自光束的电子被部分导电层吸收,然后在下一个电子束扫描之前流回导电片以产生交流电压。 导电片与在液晶的读出侧提供电压基准的透明电极连接。 该器件设计有电参数,其从部分导电层产生放电速率足够快以在连续的电子束扫描之间完成AC循环,但是足够慢以使液晶响应并产生图像。 可以提供单独的反射镜以将读出的光束反射回液晶,或者导电片本身可以用作反射镜。
    • 8. 发明授权
    • Flicker free infrared simulator with resistor bridges
    • 具有电阻桥的无闪烁红外线模拟器
    • US4922116A
    • 1990-05-01
    • US370109
    • 1989-06-21
    • Jan GrinbergMurray S. Welkowsky
    • Jan GrinbergMurray S. Welkowsky
    • G01J1/02G01J5/02G01J5/10G01J5/12G01J5/20G01J5/22G01J5/28G01J5/52H01L27/14H01L27/146H01L31/10H01L31/16H01L33/00H01L35/28
    • G01J5/10G01J5/20G01J5/22G01J5/522H01L27/1465
    • An infrared (IR) simulator is disclosed in which an array of pixels is defined on an insulative substrate by resistor bridges which contact the substrate at spaced locations and are separated from the substrate, and thereby thermally insulated therefrom, between the contact locations. Semiconductor drive circuits on the substrate enable desired current flows through the resistor bridges in response to input control signals, thereby establishing the appropriate IR radiation from each of the pixels. The drive circuits and also at least some of the electrical lead lines are preferably located under the resistor bridges. A thermal reflector below each bridge shields the drive circuit and reflects radiation to enhance the IR output. The drive circuits employ sample and hold circuits which produce a substantially flicker-free operation, with the resistor bridges being impedance matched with their respective drive circuits. The resistor bridges may be formed by coating insulative base bridges with a resistive layer having the desired properties, and overcoating the resistive layers with a thermally emissive material. The array is preferably formed on a silicon-on-sapphire (SOS) wafer. Arrays of electromagnetic radiation bridge detectors may also be formed, with the bridges having either resistor, thermocouple or Schottky junction constructions.
    • 公开了一种红外(IR)模拟器,其中像素阵列通过电阻器桥限定在绝缘衬底上,电阻器桥在间隔开的位置处接触衬底,并且在接触位置之间与衬底分离,从而与衬底隔离。 衬底上的半导体驱动电路响应于输入控制信号使期望的电流流过电阻器桥,从而从每个像素建立适当的红外辐射。 驱动电路以及至少一些电引线优选位于电阻桥下。 每个桥下的热反射器屏蔽驱动电路并反射辐射以增强IR输出。 驱动电路采用产生基本上无闪烁操作的采样和保持电路,其中电阻器桥与它们各自的驱动电路阻抗匹配。 可以通过用具有期望特性的电阻层涂覆绝缘基桥来形成电阻器桥,并用热发射材料覆盖电阻层。 阵列优选形成在蓝宝石(SOS)硅晶片上。 也可以形成电磁辐射桥接检测器阵列,其中桥具有电阻器,热电偶或肖特基结结构。
    • 10. 发明授权
    • Radiation detector array using radiation sensitive bridges
    • 辐射检测器阵列使用辐射敏感桥
    • US5010251A
    • 1991-04-23
    • US463563
    • 1990-01-11
    • Jan GrinbergMurray S. WelkowskyChiung-Sheng WuPaul O. Braatz
    • Jan GrinbergMurray S. WelkowskyChiung-Sheng WuPaul O. Braatz
    • G01J5/10G01J5/20G01J5/22G01J5/52
    • G01J5/10G01J5/20G01J5/22G01J5/522
    • An infrared (IR) simulator is disclosed in which an array of pixels is defined on an insulative substrate by resistor bridges which contact the substrate at spaced locations and are separated from the substrate, and thereby thermally insulated therefrom, between the contact locations. Semiconductor drive circuits on the substrate enable desired current flows through the resistor bridges in response to input control signals, thereby establishing the appropriate IR radiation from each of the pixels. The drive circuits and also at least some of the electrical lead lines are preferably located under the resistor bridges. A thermal reflector below each bridge shields the drive circuit and reflects radiation to enhance the IR output. The drive circuits employ sample and hold circuits which produce a substantially flicker-free operation, with the resistor bridges being impedance matched with their respective drive circuits. The resistor bridges may be formed by coating insulative base bridges with a resistive layer having the desired properties, and overcoating the resistive layers with a thermally emissive material. The array is preferably formed on a silicon-on-sapphire (SOS) wafer. Arrays of electromagnetic radiation bridge detectors may also be formed, with the bridges having either resistor, thermocouple or Schottky junction constructions.
    • 公开了一种红外(IR)模拟器,其中像素阵列通过电阻器桥限定在绝缘衬底上,电阻器桥在间隔开的位置处接触衬底,并且在接触位置之间与衬底分离,从而与衬底隔离。 衬底上的半导体驱动电路响应于输入控制信号使期望的电流流过电阻器桥,从而从每个像素建立适当的红外辐射。 驱动电路以及至少一些电引线优选位于电阻桥下。 每个桥下的热反射器屏蔽驱动电路并反射辐射以增强IR输出。 驱动电路采用产生基本上无闪烁操作的采样和保持电路,其中电阻器桥与它们各自的驱动电路阻抗匹配。 可以通过用具有期望特性的电阻层涂覆绝缘基桥来形成电阻器桥,并用热发射材料覆盖电阻层。 阵列优选形成在蓝宝石(SOS)硅晶片上。 也可以形成电磁辐射桥接检测器阵列,其中桥具有电阻器,热电偶或肖特基结结构。