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    • 1. 发明授权
    • Electron beam addressed liquid crystal light valve with input sheet
conductor
    • 电子束寻址液晶光阀,带输入片导体
    • US4826293A
    • 1989-05-02
    • US21381
    • 1987-03-03
    • Jan GrinbergNubuo J. KodaPhilip G. ReifWilliam P. BlehaMurray S. WelkowskyArno G. Ledebuhr
    • Jan GrinbergNubuo J. KodaPhilip G. ReifWilliam P. BlehaMurray S. WelkowskyArno G. Ledebuhr
    • G02F1/135G02F1/13G02F1/133G02F1/1333
    • G02F1/133348
    • An electron beam addressed liquid crystal light valve (LCLV) produces an AC voltage across a liquid crystal layer from a single polarity electron beam, and exhibits very high resolution. A thin layer of partially conductive material is deposited on a support membrane on the electron beam side of the liquid crystal. A conductive, electron beam permeable sheet is formed on the back of the partially conductive layer. Electrons from the beam are absorbed by the partially conductive layer, and then flow back out to the conductive sheet to produce an AC voltage prior to the next electron beam scan. The conductive sheet is connected in circuit with a transparent electrode which provides a voltage reference on the readout side of the liquid crystal. The device is designed with electrical parameters that produce a discharge rate from the partially conductive layer fast enough to complete an AC cycle between successive electron beam scans, but slow enough for the liquid crystal to respond and produce an image. A separate mirror can be provided to reflect the readout beam back through the liquid crystal, or the conductive sheet can itself serve as a mirror.
    • 电子束寻址液晶光阀(LCLV)从单极性电子束产生跨液晶层的交流电压,表现出非常高的分辨率。 部分导电材料的薄层沉积在液晶的电子束侧的支撑膜上。 在部分导电层的背面形成导电的电子束透过片。 来自光束的电子被部分导电层吸收,然后在下一个电子束扫描之前流回导电片以产生交流电压。 导电片与在液晶的读出侧提供电压基准的透明电极连接。 该器件设计有电参数,其从部分导电层产生放电速率足够快以在连续的电子束扫描之间完成AC循环,但是足够慢以使液晶响应并产生图像。 可以提供单独的反射镜以将读出的光束反射回液晶,或者导电片本身可以用作反射镜。
    • 4. 发明授权
    • Method of producing optically flat surfaces on processed silicon wafers
    • 在加工硅膜上生产光学平面的方法
    • US5160560A
    • 1992-11-03
    • US201809
    • 1988-06-02
    • Murray S. WelkowskyP. K. VasudevPhilip G. ReifNorman W. Goodwin
    • Murray S. WelkowskyP. K. VasudevPhilip G. ReifNorman W. Goodwin
    • B23Q3/15H01L21/302H01L21/304H01L21/306H01L21/683
    • H01L21/6833H01L21/302Y10S148/012Y10S148/135
    • A method for producing optically flat thin semiconductor wafers (12) bonded to a substrate (16). The wafer (12) is bonded without touching the top surface of the wafer (12). Also, the bond is created without the use of pressure. Electrostatic bonding, or contact bonding or both may be employed. After the wafer (12) is bonded, it is then polished to a desired thickness and flatness. After contact bonding and polishing the wafer (12) may then be removed for further processing. The wafer may then be contact bonded to a final substrate (b 34) or electrostatically bonded to a final substrate (42). The contact bonding technique may also be employed as a means for holding the wafer (12) during precise photolithography. The optical flatness achieved permits improved yields over conventional means for securing wafers during photolithography. The electrostatic bonding technique permits extremely thin optically flat silicon wafers to be produced.
    • 一种用于制造结合到基板(16)的光学平坦的薄的半导体晶片(12)的方法。 接合晶片(12)而不接触晶片(12)的顶表面。 此外,债券是在不使用压力的情况下创建的。 可以使用静电粘合或接触粘合或两者。 在晶片(12)接合之后,然后将其抛光至期望的厚度和平坦度。 接触结合和抛光之后,可以移除晶片(12)以便进一步处理。 然后可以将晶片与最终的基板(b 34)接触或静电地结合到最终的基板(42)上。 接触接合技术也可以用作在精确光刻期间保持晶片(12)的手段。 所获得的光学平整度允许相对于用于在光刻期间固定晶片的常规手段提高的产量。 静电接合技术允许制造极薄的光学平坦硅晶片。
    • 5. 发明授权
    • Process of preparing a secondary electron emissive coating on the
interior walls of a microchannel plate
    • 在微通道板的内壁上制备二次电子发射涂层的方法
    • US3967001A
    • 1976-06-29
    • US507838
    • 1974-09-20
    • Bipin C. AlmaulaPhilip G. Reif
    • Bipin C. AlmaulaPhilip G. Reif
    • C23C16/04B05D5/12
    • C23C16/045
    • A process of preparing a nickel secondary electron emissive conductive cong along the interior channel walls of a microchannel plate or by continuing the process of preparing a solid nickel conductor channel to provide a conductive panel and the apparatuses resulting therefrom. The microchannel plate is positioned in a heated oven, or deposition chamber, such that heated inert gases are forced through the open channels to stabilize the channel temperature. The temperature is then lowered and a nickel compound gas is mixed with the inert gas. The gas mixture is forced through the channels to decompose the microchannel plate material and deposit a thin nickel coating on the interior channel walls. If a conductive panel is desired, the process is continued until the entire channel is completely filled with nickel.
    • 或者通过继续制备固体镍导体通道以提供导电面板和由此产生的装置的工艺来制备镍二次电子发射导电涂层的方法。 微通道板定位在加热的烘箱或沉积室中,使得加热的惰性气体被迫通过开放通道以稳定通道温度。 然后降低温度,并将镍化合物气体与惰性气体混合。 气体混合物被迫通过通道以分解微通道板材料并在内部通道壁上沉积薄镍涂层。 如果需要导电板,则继续该过程直到整个通道完全充满镍。