会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same
    • 极化掺杂场效应晶体管(POLFETS)及其制作方法
    • US07525130B2
    • 2009-04-28
    • US11241804
    • 2005-09-29
    • Umesh K. MishraHuili XingDebdeep JenaSiddharth Rajan
    • Umesh K. MishraHuili XingDebdeep JenaSiddharth Rajan
    • H01L31/00
    • H01L29/812H01L29/1029H01L29/2003H01L29/7783H01L29/7787
    • Novel GaN/AlGaN metal-semiconductor field-effect transistor (MESFET) structures grown without any impurity doping in the channel. A high-mobility polarization-induced bulk channel charge is created by grading the channel region linearly from GaN to Al0.3Ga0.7N over a distance, e.g., 1000 Å. A polarization-doped field effect transistor (PolFET) was fabricated and tested under DC and RF conditions. A current density of 850 mA/mm and transconductance of 93 mS/mm was observed under DC conditions. Small-signal characterization of 0.7 μm gate length devices had a cutoff frequency, fτ=19 GHz, and a maximum oscillation of fmax=46 GHz. The PolFETs perform better than comparable MESFETs with impurity-doped channels, and are suitable for high microwave power applications. An important advantage of these devices over AlGaN/GaN HEMTs is that the transconductance vs. gate voltage profile can be tailored by compositional grading for better large-signal linearity.
    • 新型GaN / AlGaN金属半导体场效应晶体管(MESFET)结构在通道中没有任何杂质掺杂生长。 通过在一定距离(例如)1000处将通道区域从GaN线性地分级至Al 0.3 Ga 0.7 N来产生高迁移率极化诱导的体沟道电荷。 在DC和RF条件下制造和测试偏振掺杂场效应晶体管(PolFET)。 在直流条件下观察到电流密度为850mA / mm,跨导为93mS / mm。 0.7mm门极长度器件的小信号表征具有截止频率ftau = 19GHz,fmax = 46GHz的最大振荡。 PolFET比具有杂质掺杂通道的可比MESFET性能更好,适用于高微波功率应用。 这些器件对AlGaN / GaN HEMT的一个重要优点是跨导与栅极电压分布可以通过组合分级来定制,以获得更好的大信号线性度。