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    • 1. 发明授权
    • Method of fabricating a polysilicon layer
    • 制造多晶硅层的方法
    • US06391395B1
    • 2002-05-21
    • US09695438
    • 2000-10-23
    • Tzu-Feng TsengYi-Ming ChenWen-Rei Guo
    • Tzu-Feng TsengYi-Ming ChenWen-Rei Guo
    • H05H102
    • H01L21/02675H01L21/02532H01L21/02686H01L21/2026H01L29/6675H01L29/78633
    • The present invention is directed to a method of forming a polysilicon layer. A light shield layer having a super-resolution near-field structure is arranged on an amorphous silicon layer. The super-resolution near-field structure includes a first dielectric layer, a second dielectric layer, and an active layer between the first dielectric layer and the second dielectric layer. The light shield layer is irradiated by a laser beam having a first intensity to generate a transmitted laser beam having a second intensity. The second intensity is greater than the first intensity. An annealing process is performed to irradiate the amorphous silicon layer with the transmitted laser beam having a second intensity thereby converting the amorphous silicon layer into a polysilicon layer.
    • 本发明涉及一种形成多晶硅层的方法。 具有超分辨率近场结构的遮光层布置在非晶硅层上。 超分辨率近场结构包括第一电介质层,第二电介质层和在第一介电层和第二介电层之间的有源层。 光屏蔽层被具有第一强度的激光束照射以产生具有第二强度的透射激光束。 第二强度大于第一强度。 执行退火处理以用具有第二强度的透射激光束照射非晶硅层,从而将非晶硅层转化为多晶硅层。
    • 2. 发明授权
    • Method of photolithography using super-resolution near-field structure
    • 使用超分辨率近场结构的光刻方法
    • US06506543B1
    • 2003-01-14
    • US09693080
    • 2000-10-20
    • Tzu-Feng TsengWen-Rei GuoKuei-Yen Wu
    • Tzu-Feng TsengWen-Rei GuoKuei-Yen Wu
    • G03C500
    • G03F7/70216G03F7/094Y10S430/146
    • A method of photolithography using super-resolution near-field structure. A super-resolution near-field structure is formed on a semiconductor chip comprising a substrate and a photoresist layer thereon. An incident light beam penetrates through the super-resolution near-field structure to expose the photoresist layer. While penetrating through the super-resolution near field structure, the intensity of the incident light beam is increased, and the aperture of the light beam is reduced. As a result, the line width of the pattern formed on the photoresist layer is narrowed. The super-resolution near-field structure has a first dielectric layer, a second dielectric layer and an active layer sandwiched between the first and the second dielectric layers. The active layer is formed of one of gallium (Ga), germanium (Ge), arsenic (As), selenium (Se), indium (In), tin (Sn), antimony (Sb), tellurium (Te), and silver (Ag). Or alternatively, the active layer can be formed of one of the materials of gallium oxide, germanium oxide, arsenic oxide, selenium oxide, indium oxide, tin oxide, antimony oxide, tellurium oxide and silver oxide.
    • 使用超分辨率近场结构的光刻方法。 在其上包括基板和光致抗蚀剂层的半导体芯片上形成超分辨率近场结构。 入射光束穿过超分辨率近场结构以暴露光致抗蚀剂层。 当穿透超分辨率近场结构时,入射光束的强度增加,光束的孔径减小。 结果,形成在光致抗蚀剂层上的图案的线宽变窄。 超分辨率近场结构具有第一介电层,第二介电层和夹在第一和第二介电层之间的有源层。 有源层由镓(Ga),锗(Ge),砷(As),硒(Se),铟(In),锡(Sn),锑(Sb),碲(Te)和银 (Ag)。 或者,有源层可以由氧化镓,氧化锗,氧化砷,氧化硒,氧化铟,氧化锡,氧化锑,氧化碲和氧化银等材料之一构成。
    • 3. 发明授权
    • Method of increasing recording density and capacity of a compact disc
    • 提高光盘记录密度和容量的方法
    • US06404722B1
    • 2002-06-11
    • US09706262
    • 2000-11-03
    • Tzu-Feng TsengWen-Rei GuoKuei-Yen Wu
    • Tzu-Feng TsengWen-Rei GuoKuei-Yen Wu
    • G11B700
    • B82Y10/00G11B7/1365G11B7/1381G11B7/1387
    • A method of increasing recording density and capacity of a compact disc. The compact disc has a transparent substrate and a data-recording region on the transparent substrate. To perform data access, a laser light beam emitting from a light source transmits through the transparent substrate and is incident on the data recording region. By inserting a optical plate with a super-resolution near-field structure between the light source and the compact disc, the light intensity of the laser light beam is increased and the aperture of the laser light beam is reduced. Therefore, the recording dimension of data recording region on the compact disc is reduced, and the recording density and capacity of the compact disc is increased. The super-resolution near-field structure is formed of a first dielectric layer, a second dielectric layer and an active layer sandwiched between the first and second dielectric layers. The material of the active layer is selected from one of gallium, germanium, arsenic, selenium, indium, antimony (stibium), tellurium and silver or gallium oxide, germanium oxide, arsenic oxide, selenium oxide, indium oxide, antimony oxide, tellurium oxide and silver oxide.
    • 提高光盘的记录密度和容量的方法。 光盘在透明基板上具有透明基板和数据记录区域。 为了进行数据访问,从光源发射的激光束透过透明基板并入射到数据记录区域。 通过在光源和光盘之间插入具有超分辨率近场结构的光学板,激光束的光强度增加,激光光束的孔径减小。 因此,光盘上的数据记录区域的记录尺寸减小,并且光盘的记录密度和容量增加。 超分辨率近场结构由夹在第一和第二介电层之间的第一电介质层,第二电介质层和有源层形成。 活性层的材料选自镓,锗,砷,硒,铟,锑(锑),碲和银或氧化镓之一,氧化锗,氧化砷,氧化硒,氧化铟,氧化锑,氧化碲 和氧化银。
    • 7. 发明授权
    • Fan-out wire structure for a display panel
    • 用于显示面板的扇出线结构
    • US07723728B2
    • 2010-05-25
    • US11438382
    • 2006-05-22
    • Kun-Hong ChenWen-Rei Guo
    • Kun-Hong ChenWen-Rei Guo
    • H01L27/12
    • G02F1/1345
    • A fan-out wire structure is used to connect a driver and a display region of a display panel and has a plurality of first single-layer wires and at least one second single-layer wire. The first ends of the first single-layer wires are connected to the driver, and the second ends of the first single-layer wires are connected to the display area. The first end of the second single-layer wire is connected to the driver, and the second end of the second single-layer wire is connected to the display area. A metal layer of the first single-layer wires is different from a metal layer of the second single-layer wire.
    • 使用扇形线结构来连接显示面板的驱动器和显示区域,并且具有多个第一单层电线和至少一个第二单层电线。 第一单层电线的第一端连接到驱动器,第一单层电线的第二端连接到显示区域。 第二单线的第一端连接到驱动器,第二单线的第二端连接到显示区。 第一单层布线的金属层与第二单层布线的金属层不同。
    • 8. 发明申请
    • Fan-out wire structure for a display panel
    • 用于显示面板的扇出线结构
    • US20070039706A1
    • 2007-02-22
    • US11438382
    • 2006-05-22
    • Kun-Hong ChenWen-Rei Guo
    • Kun-Hong ChenWen-Rei Guo
    • D21F1/00
    • G02F1/1345
    • A fan-out wire structure is used to connect a driver and a display region of a display panel and has a plurality of first single-layer wires and at least one second single-layer wire. The first ends of the first single-layer wires are connected to the driver, and the second ends of the first single-layer wires are connected to the display area. The first end of the second single-layer wire is connected to the driver, and the second end of the second single-layer wire is connected to the display area. A metal layer of the first single-layer wires is different from a metal layer of the second single-layer wire.
    • 使用扇形线结构来连接显示面板的驱动器和显示区域,并且具有多个第一单层电线和至少一个第二单层电线。 第一单层电线的第一端连接到驱动器,第一单层电线的第二端连接到显示区域。 第二单线的第一端连接到驱动器,第二单线的第二端连接到显示区。 第一单层布线的金属层与第二单层布线的金属层不同。