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1. 发明授权

US6004829A Method of increasing end point detection capability of reactive ion etching by adding pad area 失效
标题翻译：通过添加焊盘面积增加反应离子蚀刻终点检测能力的方法
公开(公告)号：US6004829A
公开(公告)日：1999-12-21
申请号：US928229
申请日：1997-09-12
申请人： Tzong-Sheng Chang , Yen-Shih Ho , Ruey-Hsin Liou , Yuan-Cheng Yu
发明人： Tzong-Sheng Chang , Yen-Shih Ho , Ruey-Hsin Liou , Yuan-Cheng Yu
IPC分类号： H01L21/311 , H01L21/66 , H01L21/8247 , H01L23/544 , H01L21/8238
CPC分类号： H01L27/11526 , H01L21/31116 , H01L22/26 , H01L22/34 , H01L27/11539 , H01L2924/0002
摘要： A method of forming a semiconductor device includes forming of layers of polysilicon and dielectric layers in manufacturing a semiconductor device and patterning the layers into devices using phototlithography and etching process steps. End point mode detection is used in the etching process in a way in which the area exposed during etching is increased to enhance the end point detection capacity, by adding a surplus pad area before pad formation. Specifically an EPROM device is formed with a first level of polysilicon above a gate oxide layer patterned into a floating gate electrode of an EPROM device. Then form an ONO layer above the floating gate electrode. Define array protection, grow a second gate oxide layer, deposit a second level of polysilicon, define peripheral gates from the second level of polysilicon, and define an EPROM transistor gate electrode from the second level of polysilicon.
摘要翻译：形成半导体器件的方法包括在制造半导体器件中形成多晶硅层和电介质层，并使用光刻和蚀刻工艺步骤将层图案化成器件。在蚀刻工艺中使用端点模式检测，其中通过在焊盘形成之前添加剩余焊盘区域，在蚀刻期间暴露的区域增加以增强端点检测能力的方式。具体地说，EPROM器件形成有图案化为EPROM器件的浮置栅电极的栅极氧化物层上方的第一级多晶硅。然后在浮栅电极上形成ONO层。定义阵列保护，生长第二栅极氧化层，沉积第二级多晶硅，从第二级多晶硅定义外围栅极，并从第二级多晶硅定义EPROM晶体管栅电极。

2. 发明授权

US06791666B2 Variable transmission focal mask for lens heating compensation 失效
标题翻译：用于透镜加热补偿的可变透射焦距掩模
公开(公告)号：US06791666B2
公开(公告)日：2004-09-14
申请号：US09996981
申请日：2001-11-19
申请人： Yuan-Cheng Yu , Chin-Chuan Hsieh
发明人： Yuan-Cheng Yu , Chin-Chuan Hsieh
IPC分类号： G03B2752
CPC分类号： G03F7/70191 , G03B27/52 , G03F7/70891
摘要： A variable transmission focal mask to compensate lens heating is disclosed. A semiconductor fabrication alignment and exposure equipment includes an exposure and alignment unit, a variable transmission mask, and a stage. The unit has a light source and a lens. The mask is under the lens, and at least indirectly measures focus. The mask further can adjust the focus in real time in response to determining that the focus is out of specification. A wafer is placed on the stage for exposure to the light source through a mask or a reticle. The variable transmission mask normally has a substantially high transmission of light rating that can be adjusted downward to adjust the focus. For example, the mask can be a liquid crystal display (LCD) that can be darkened to so reduce its transmission of light rating.
摘要翻译：公开了一种用于补偿透镜加热的可变透射聚焦掩模。半导体制造对准和曝光设备包括曝光和对准单元，可变透射掩模和台。该单元具有光源和透镜。面具在镜片下，至少间接测量焦点。响应于确定焦点超出规格，该掩模还可以实时调整焦点。将晶片放置在台架上，以通过掩模或掩模版曝光于光源。可变透射掩模通常具有基本上高的透光率，其可以向下调节以调节聚焦。例如，掩模可以是可以变暗以便降低其光分级传输的液晶显示器（LCD）。

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