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1. 发明授权

US06969866B1 Electrically programmable memory element with improved contacts 有权
标题翻译：具有改进触点的电可编程存储元件
公开(公告)号：US06969866B1
公开(公告)日：2005-11-29
申请号：US09276273
申请日：1999-03-25
申请人： Tyler Lowrey , Stanford R. Ovshinsky , Guy C. Wicker , Patrick J. Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey A. Kostylev
发明人： Tyler Lowrey , Stanford R. Ovshinsky , Guy C. Wicker , Patrick J. Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey A. Kostylev
IPC分类号： G11C11/56 , H01L27/24 , H01L45/00 , H01L47/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A memory element comprising a volume of phase change memory material; and first and second contact for supplying an electrical signal to the memory material, wherein the first contact comprises a conductive sidewall spacer. Alternately, the first contact may comprise a contact layer having an edge adjacent to the memory material.
摘要翻译：一种存储器元件，包括一定量的相变存储器材料; 以及用于向存储器材料提供电信号的第一和第二触点，其中第一触点包括导电侧壁间隔物。或者，第一接触可以包括具有与存储材料相邻的边缘的接触层。

2. 发明授权

US07407829B2 Electrically programmable memory element with improved contacts 有权
标题翻译：具有改进触点的电可编程存储元件
公开(公告)号：US07407829B2
公开(公告)日：2008-08-05
申请号：US10799265
申请日：2004-03-12
申请人： Tyler Lowrey , Stanford R. Ovshinsky , Guy C. Wicker , Patrick J. Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey A. Kostylev
发明人： Tyler Lowrey , Stanford R. Ovshinsky , Guy C. Wicker , Patrick J. Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey A. Kostylev
IPC分类号： H01L21/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A method of making an electrically programmable memory element, comprising: providing a first dielectric layer; forming a conductive material over the first dielectric layer; forming a second dielectric layer over the conductive material; and forming a programmable resistance material in electrical contact with a peripheral surface of the conductive material.
摘要翻译：一种制造电可编程存储元件的方法，包括：提供第一介电层; 在所述第一介电层上形成导电材料; 在所述导电材料上形成第二电介质层; 以及形成与导电材料的外围表面电接触的可编程电阻材料。

3. 发明授权

US6075719A Method of programming phase-change memory element 有权
标题翻译：编程相变存储元件的方法
公开(公告)号：US6075719A
公开(公告)日：2000-06-13
申请号：US337778
申请日：1999-06-22
申请人： Tyler Lowrey , Guy C. Wicker , Boil Pashmakov , Patrick J. Klersy , Sergey A. Kostylev , Wolodymyr Czubatyj
发明人： Tyler Lowrey , Guy C. Wicker , Boil Pashmakov , Patrick J. Klersy , Sergey A. Kostylev , Wolodymyr Czubatyj
IPC分类号： G11C13/00 , G11C11/00 , G11C11/34 , G11C16/02 , G11C16/34 , H01L45/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0064
摘要： A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second pulse of energy sufficient to transform the device from the high to low resistance states is applied following the first pulse. In another programming method, the present and desired device states are compared, and programming pulses are applied only if the state of the device needs to be changed.
摘要翻译：一种将电可编程相变存储元件编程为低电阻状态的方法。施加足以将器件从低电阻状态转换为高电阻状态的能量的第一脉冲，并且在第一脉冲之后施加足以将器件从高电阻状态转换为低电阻状态的第二能量脉冲。在另一种编程方法中，比较当前和期望的器件状态，并且只有当需要改变器件的状态时才施加编程脉冲。

4. 发明授权

US6087674A Memory element with memory material comprising phase-change material and dielectric material 失效
标题翻译：具有记忆材料的存储元件包括相变材料和电介质材料
公开(公告)号：US6087674A
公开(公告)日：2000-07-11
申请号：US63174
申请日：1998-04-20
申请人： Standford R. Ovshinsky , Wolodymyr Czubatyj , David A. Strand , Patrick J. Klersy , Sergey Kostylev , Boil Pashmakov
发明人： Standford R. Ovshinsky , Wolodymyr Czubatyj , David A. Strand , Patrick J. Klersy , Sergey Kostylev , Boil Pashmakov
IPC分类号： H01L27/10 , G11C16/02 , H01L27/105 , H01L45/00 , H01L47/00
CPC分类号： G11C13/0004 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/144 , G11C2213/35 , G11C2213/51 , G11C2213/52 , G11C2213/72
摘要： An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a portion of the volume of memory material. An electrically operated, single-cell memory element comprising: a volume of memory material defining the single-cell memory element, the memory material comprising a phase-change material and a dielectric material where the phase-change material has a plurality of detectable resistivity values and can be set directly to one of the resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of the material, in response to an electrical signal; and means for delivering the electrical signal to at least a portion of the volume of memory material.
摘要翻译：一种电操作的单个单元存储器元件，包括：一定量单个存储单元的存储器材料的体积，所述存储器材料包括相变材料和电介质材料的不均匀混合物; 以及用于将电信号传送到所述存储器材料的体积的至少一部分的装置。一种电操作的单电池存储元件，包括：限定单个单元存储元件的存储器材料的量，所述存储器材料包括相变材料和介电材料，其中所述相变材料具有多个可检测的电阻率值并且可以直接设置为电阻率值之一，而不需要根据材料的电阻率值将电阻值设定为特定的起始或擦除电阻率值; 以及用于将电信号传送到存储材料体积的至少一部分的装置。

5. 发明授权

US5177567A Thin-film structure for chalcogenide electrical switching devices and process therefor 失效
标题翻译：混合电气开关器件的薄膜结构及其工艺
公开(公告)号：US5177567A
公开(公告)日：1993-01-05
申请号：US732544
申请日：1991-07-19
申请人： Patrick J. Klersy , David C. Jablonski , Stanford R. Ovshinsky
发明人： Patrick J. Klersy , David C. Jablonski , Stanford R. Ovshinsky
IPC分类号： H01L45/00
CPC分类号： H01L45/1675 , H01L45/04 , H01L45/06 , H01L45/126 , H01L45/141 , H01L45/1625
摘要： Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching devices fabricated of chalcogenide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the instant invention employs a thin layer of insulating material beneath the body of chalcogenide material so as to carefully define the filament location. Since the filament location has been fixed, switching, due to edge conduction pathways has been substantially eliminated. At the same time, the use of a thin insulating layer precludes step coverage faults of the prior art. The requirement for the thin layer of insulator material to withstand the switching voltage is addressed through the use of a second thicker layer of insulator material which is deposited only after the chalcogenide material has been formed. This improved structure demonstrates the advantages of higher fabrication yields and more repeatable electrical switching characteristics.
摘要翻译：本文公开了一种用于克服现有技术中存在的许多设计缺点的由硫族化物材料制成的固态薄膜电开关器件的新型薄膜结构。本发明的新颖结构在硫族化物材料的主体下方采用绝缘材料薄层，以便仔细地确定丝条的位置。由于灯丝位置已被固定，所以由于边缘传导路径的切换已被基本消除。同时，使用薄的绝缘层可防止现有技术的步骤覆盖故障。绝缘材料薄层承受开关电压的要求是通过使用仅在形成硫族化物材料之后沉积的绝缘体材料的第二较厚层来解决的。这种改进的结构表现出更高的制造成本和更可重复的电开关特性的优点。

6. 发明授权

US5330630A Switch with improved threshold voltage 失效
标题翻译：切换具有提高的阈值电压
公开(公告)号：US5330630A
公开(公告)日：1994-07-19
申请号：US636815
申请日：1991-01-02
申请人： Patrick J. Klersy , Stanford R. Ovshinsky
发明人： Patrick J. Klersy , Stanford R. Ovshinsky
IPC分类号： H01L45/00 , H03K17/30 , C23C14/34 , B05D3/06
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/141 , H01L45/1625 , H01L45/1641 , H03K17/30
摘要： The first fire voltage of chalcogenide-based switching devices is lowered to a value approximately equal to the threshold voltage by treatment of the chalcogenide material with fluorine either during or after deposition.
摘要翻译：通过在沉积期间或之后用氟处理硫属化物材料，将基于硫属元素化物的开关器件的第一次火电降低到大约等于阈值电压的值。

7. 发明授权

US06617192B1 Electrically programmable memory element with multi-regioned contact 有权
标题翻译：具有多区域接触的电可编程存储元件
公开(公告)号：US06617192B1
公开(公告)日：2003-09-09
申请号：US09677957
申请日：2000-10-03
申请人： Tyler Lowrey , Stephen J. Hudgens , Patrick J. Klersy
发明人： Tyler Lowrey , Stephen J. Hudgens , Patrick J. Klersy
IPC分类号： H01L2100
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.
摘要翻译：一种电操作的存储元件，其具有与可编程为至少第一电阻状态和第二电阻状态的存储器材料电连通的触点。优选地，触点至少包括具有第一电阻率的第一区域和具有大于第一电阻率的第二电阻率的第二区域，其中较大电阻区域与存储材料相邻。

8. 发明授权

US07576350B2 Programmable resistance memory element with multi-regioned contact 有权
标题翻译：具有多区域接触的可编程电阻存储元件
公开(公告)号：US07576350B2
公开(公告)日：2009-08-18
申请号：US10891970
申请日：2004-07-15
申请人： Tyler Lowrey , Stephen J. Hudgens , Patrick J. Klersy
发明人： Tyler Lowrey , Stephen J. Hudgens , Patrick J. Klersy
IPC分类号： H01L29/02
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： An electrically programmable memory element comprising a programmable resistance material and an electrical contact. The electrical contact having at least two portion wherein the first portion has a higher resistivity than the second portion.
摘要翻译：一种电可编程存储元件，包括可编程电阻材料和电触点。所述电触点具有至少两部分，其中所述第一部分具有比所述第二部分更高的电阻率。

9. 发明授权

US06764897B2 Method of making programmable resistance memory element 有权
公开(公告)号：US06764897B2
公开(公告)日：2004-07-20
申请号：US10649562
申请日：2003-08-26
申请人： Tyler Lowrey , Stephen J. Hudgens , Patrick J. Klersy
发明人： Tyler Lowrey , Stephen J. Hudgens , Patrick J. Klersy
IPC分类号： H01L218246
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A method of making an electrically operated memory element. The memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.

10. 发明授权

US06507061B1 Multiple layer phase-change memory 有权
公开(公告)号：US06507061B1
公开(公告)日：2003-01-14
申请号：US09945331
申请日：2001-08-31
申请人： Stephen J. Hudgens , Tyler A. Lowrey , Patrick J. Klersy
发明人： Stephen J. Hudgens , Tyler A. Lowrey , Patrick J. Klersy
IPC分类号： H01L2976
CPC分类号： H01L45/06 , H01L29/8615 , H01L45/1233 , H01L45/128 , H01L45/144
摘要： A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.

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