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1. 发明授权

US06433314B1 Direct temperature control for a component of a substrate processing chamber 有权
标题翻译：用于基板处理室的部件的直接温度控制
公开(公告)号：US06433314B1
公开(公告)日：2002-08-13
申请号：US09632721
申请日：2000-08-04
申请人： Tushar Mandrekar , Anish Tolia , Nitin Khurana
发明人： Tushar Mandrekar , Anish Tolia , Nitin Khurana
IPC分类号： F27B514
CPC分类号： H01L21/67132 , G05D23/19 , H01J37/3244 , H01J37/32522 , H01L21/67028 , H01L21/67092
摘要： An apparatus and a method of regulating temperature of a component of a processing chamber is provided. The apparatus comprises a first thermal conductor thermally connected to the component, wherein the first thermal conductor is a resistive heating element disposed adjacent the component, a second thermal conductor thermally connected to the component, wherein the second thermal conductor is a fluid channel disposed adjacent the component, the fluid channel having a fluid inlet and a fluid outlet, a controller connected to the first and second thermal conductors, providing at least one temperature sensor connected to the component to supply temperature readings to the controller. Radiative heaters in thermal communication with the component may be used in place of a resistive heating element.
摘要翻译：提供了一种调节处理室的部件温度的装置和方法。该装置包括热连接到部件的第一热导体，其中第一热导体是邻近部件设置的电阻加热元件，热连接到部件的第二热导体，其中第二热导体是邻近该部件设置的流体通道流体通道具有流体入口和流体出口，连接到第一和第二热导体的控制器，提供连接到部件的至少一个温度传感器以向控制器提供温度读数。可以使用与部件热连通的辐射加热器来代替电阻加热元件。

2. 发明授权

US06345642B1 Method and apparatus for removing processing liquid from a processing liquid path 有权
标题翻译：从处理液路径去除处理液的方法和装置
公开(公告)号：US06345642B1
公开(公告)日：2002-02-12
申请号：US09252716
申请日：1999-02-19
申请人： Ted G. Yoshidome , Tushar Mandrekar , Nitin Khurana , Anish Tolia
发明人： Ted G. Yoshidome , Tushar Mandrekar , Nitin Khurana , Anish Tolia
IPC分类号： B08B304
CPC分类号： F16K27/003 , Y10T137/0419 , Y10T137/4259 , Y10T137/86131 , Y10T137/87249 , Y10T137/87885
摘要： A valve arrangement is provided that more effectively purges processing liquid from a processing liquid delivery system. With the valve arrangement only a small portion of the processing liquid path having a small wetting perimeter must be purged to affect replacement of a dysfunctional injection valve or any other component within the processing liquid delivery system. The valve arrangement comprises a first and a second isolation valve, a pump valve and purge valve configured to reduce the wetting perimeter defined by the four valves. The valve arrangement allows a dysfunctional injection valve or any other component to be replaced without health risk to humans or damage risk to a processing liquid delivery system employing the valve arrangement. During component replacement, the first and the second isolation valves are closed and the pump and the purge valves are opened so as to purge processing liquid from the isolated volume defined by the four valves. Pump/purge cycles preferably are performed, and the purging process may be performed automatically or manually. Once the isolated volume is purged, one of the isolation valves and the component are removed and replaced as a unit.
摘要翻译：提供了一种更有效地从处理液体输送系统清洗处理液体的阀装置。利用阀装置，必须清洗具有小润湿周长的处理液路径的一小部分，以影响功能失调的喷射阀或处理液体输送系统内的任何其它部件的更换。阀装置包括第一和第二隔离阀，泵阀和净化阀，其构造成减少由四个阀限定的润湿周长。阀装置允许更换功能失调的注射阀或任何其它部件，而不会对人体造成健康危害，或损害使用阀装置的处理液体输送系统的风险。在组件更换期间，关闭第一和第二隔离阀，并打开泵和清洗阀，以便从由四个阀限定的隔离容积中清除处理液。优选执行泵/清洗循环，并且清洗过程可以自动或手动进行。一旦隔离的容积被清除，隔离阀和组件中的一个被去除并且被替换为一个单元。

3. 发明授权

US6117245A Method and apparatus for controlling cooling and heating fluids for a gas distribution plate 失效
标题翻译：用于控制气体分配板的冷却和加热流体的方法和装置
公开(公告)号：US6117245A
公开(公告)日：2000-09-12
申请号：US57254
申请日：1998-04-08
申请人： Tushar Mandrekar , Anish Tolia , Nitin Khurana
发明人： Tushar Mandrekar , Anish Tolia , Nitin Khurana
IPC分类号： C23C16/42 , H01J37/32 , H01L21/205 , C23C16/00 , C23C8/00
CPC分类号： H01J37/3244 , H01J37/32522
摘要： The invention provides an apparatus and a method of regulating temperature of a component of a processing chamber comprising providing a thermal conductor thermally connected to the component, providing a controller connected to the thermal conductor, providing at least one temperature sensor connected to the component to supply temperature readings to the controller and regulating heat transfer between the component and the thermal conductor by changing the temperature of the thermal conductor. The invention also provides an apparatus and a method for providing a thermal gradient in a chamber component comprising providing a first thermal conductor at a first temperature attached to the component and providing a second thermal conductor at a second temperature attached to the component.
摘要翻译：本发明提供了一种调节处理室的部件的温度的装置和方法，包括提供热连接到部件的热导体，提供连接到热导体的控制器，提供连接到部件的至少一个温度传感器以供应温度读数到控制器，并通过改变热导体的温度来调节部件和热导体之间的热传递。本发明还提供了一种用于在腔室部件中提供热梯度的装置和方法，该装置和方法包括提供连接到部件上的第一温度的第一热导体，并在连接到部件的第二温度下提供第二热导体。

4. 发明授权

US06305392B1 Method and apparatus for removing processing liquid from a processing liquid delivery line 失效
标题翻译：从处理液体输送管线去除处理液体的方法和装置
公开(公告)号：US06305392B1
公开(公告)日：2001-10-23
申请号：US09252717
申请日：1999-02-19
申请人： Anish Tolia , Tushar Mandrekar , Michael Jackson
发明人： Anish Tolia , Tushar Mandrekar , Michael Jackson
IPC分类号： B08B9027
CPC分类号： C23C16/4408 , B01J4/008 , B01J19/10 , B01J19/12 , B01J2219/0877 , B08B9/032 , B08B2209/005 , B65G53/521 , C23C16/4407 , Y10T137/4245 , Y10T137/4259 , Y10T137/4273
摘要： A method and apparatus for desorbing processing liquid from a processing liquid delivery line is provided. Non-thermal energy, such as ultrasonic energy or electromagnetic energy, is applied to a processing liquid delivery line. The non-thermal energy may be applied directly to the processing liquid delivery line, or may be applied indirectly via a conducting medium which distributes the energy along the length of the processing liquid delivery line. When non-thermal energy in the form of electromagnetic energy is employed, the frequency of the electromagnetic energy is adjusted to match the vibrational frequency of the absorbed molecules of processing liquid.
摘要翻译：提供了一种从处理液体输送管线解吸处理液体的方法和装置。将非热能，例如超声能量或电磁能量施加到处理液体输送管线。非热能可以直接施加到处理液体输送管线，或者可以通过沿着处理液体输送管线的长度分配能量的导电介质间接地施加。当采用电磁能形式的非热能时，电磁能的频率被调节以匹配被吸收的处理液分子的振动频率。

5. 发明授权

US06375753B1 Method and apparatus for removing processing liquid from a processing liquid delivery line 失效
标题翻译：从处理液体输送管线去除处理液体的方法和装置
公开(公告)号：US06375753B1
公开(公告)日：2002-04-23
申请号：US09908132
申请日：2001-07-18
申请人： Anish Tolia , Tushar Mandrekar , Michael Jackson
发明人： Anish Tolia , Tushar Mandrekar , Michael Jackson
IPC分类号： B08B9027
CPC分类号： C23C16/4408 , B01J4/008 , B01J19/10 , B01J19/12 , B01J2219/0877 , B08B9/032 , B08B2209/005 , B65G53/521 , C23C16/4407 , Y10T137/4245 , Y10T137/4259 , Y10T137/4273
摘要： A method and apparatus for desorbing processing liquid from a processing liquid delivery line is provided. Non-thermal energy, such as ultrasonic energy or electromagnetic energy, is applied to a processing liquid delivery line. The non-thermal energy may be applied directly to the processing liquid delivery line, or may be applied indirectly via a conducting medium which distributes the energy along the length of the processing liquid delivery line. When non-thermal energy in the form of electromagnetic energy is employed, the frequency of the electromagnetic energy is adjusted to match the vibrational frequency of the absorbed molecules of processing liquid.
摘要翻译：提供了一种从处理液体输送管线解吸处理液体的方法和装置。将非热能，例如超声能量或电磁能量施加到处理液体输送管线。非热能可以直接施加到处理液体输送管线，或者可以通过沿着处理液体输送管线的长度分配能量的导电介质间接地施加。当采用电磁能形式的非热能时，电磁能的频率被调节以匹配被吸收的处理液分子的振动频率。

6. 发明授权

US06398929B1 Plasma reactor and shields generating self-ionized plasma for sputtering 失效
标题翻译：等离子体反应器和屏蔽产生用于溅射的自离子等离子体
公开(公告)号：US06398929B1
公开(公告)日：2002-06-04
申请号：US09414614
申请日：1999-10-08
申请人： Tony P. Chiang , Yu D. Cong , Peijun Ding , Jianming Fu , Howard H. Tang , Anish Tolia
发明人： Tony P. Chiang , Yu D. Cong , Peijun Ding , Jianming Fu , Howard H. Tang , Anish Tolia
IPC分类号： C23C1434
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. The target power for a 200 mm wafer is preferably at least 10 kW; more preferably, at least 18 kW; and most preferably, at least 24 kW. Hole filling with SIP is improved by long-throw sputtering in which the target-to-substrate spacing is at least 50% of substrate diameter, more preferably at least 80%, most preferably at least 140%. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes, a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole. Preferably, the plasma is ignited in a cool process in which low power is applied to the target in the presence of a higher pressure of argon working gas. After ignition, the pressure is reduced, and target power is ramped up to a relatively high operational level to sputter deposit the film.
摘要翻译：用于溅射铜的直流磁控溅射反应器，其使用方法，以及促进自离子等离子体（SIP）溅射的屏蔽和其它部件，优选在低于5毫托的压力，优选低于1毫托的压力下。另外，使用SIP将第一铜层涂覆在窄的和深的通孔或沟槽中的方法。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 200mm晶片的目标功率优选为至少10kW; 更优选至少18kW; 最优选至少24kW。通过长投射溅射改善了填充SIP的孔，其中目标 - 衬底间距至少为衬底直径的50％，更优选至少80％，最优选至少140％。 SIP铜层可以作为用常规溅射（PVD）或电化学电镀（ECP）进行孔填充的晶种和成核层。对于非常高的纵横比孔，通过化学气相沉积（CVD）在SIP铜成核层上沉积铜籽晶层，并且PVD或ECP完成孔填充。可以通过SIP和高密度等离子体溅射的组合来沉积铜籽晶层。对于非常窄的孔，CVD铜层可以填充孔。优选地，在存在较高压力的氩气工作气体的冷却过程中点燃等离子体，其中低功率被施加到目标物上。点火后，压力降低，目标功率上升到相对较高的操作水平以溅射沉积薄膜。

7. 发明授权

US06297147B1 Plasma treatment for ex-situ contact fill 失效
标题翻译：等离子体处理用于非原位接触填充
公开(公告)号：US06297147B1
公开(公告)日：2001-10-02
申请号：US09092811
申请日：1998-06-05
申请人： Lisa Yang , Anish Tolia , Roderick Craig Mosely
发明人： Lisa Yang , Anish Tolia , Roderick Craig Mosely
IPC分类号： H01L214763
CPC分类号： H01L21/76856 , C23C14/024 , C23C16/0272 , H01L21/76843 , H01L21/76862 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： The present invention provides a method and apparatus for filling contacts, vias, trenches, and other patterns, in a substrate surface, particularly patterns having high aspect ratios. Generally, the present invention provides a method for removing oxygen from the surface of an oxidized metal layer prior to deposition of a subsequent metal. The oxidized metal is treated with a plasma consisting of nitrogen, hydrogen, or a mixture thereof. In one aspect of the invention, the metal layer is Ti, TiN, Ta, TaN, Ni, NiV, or V, and a subsequent wetting layer is deposited using either CVD techniques or electroplating, such as CVD aluminum (Al) or electroplating of copper (Cu). The metal layer can be exposed to oxygen or the atmosphere and then treated with a plasma of nitrogen and/or hydrogen in two or more cycles to remove or reduce oxidation of the surface of the metal layer and nucleate the growth of a subsequent metal layer thereon.
摘要翻译：本发明提供一种用于在衬底表面中填充触点，通孔，沟槽和其它图案的方法和装置，特别是具有高纵横比的图案。通常，本发明提供了在沉积后续金属之前从氧化金属层的表面除去氧的方法。用由氮，氢或其混合物组成的等离子体处理氧化金属。在本发明的一个方面，金属层是Ti，TiN，Ta，TaN，Ni，NiV或V，并且随后的润湿层使用CVD技术或电镀，例如CVD铝（Al）或电镀铜（Cu）。金属层可以暴露于氧气或大气中，然后在两个或更多个循环中用氮和/或氢气等离子体处理以去除或减少金属层表面的氧化并使其后续金属层的生长成核。

8. 发明授权

US06582569B1 Process for sputtering copper in a self ionized plasma 有权
标题翻译：在自离子等离子体中溅射铜的工艺
公开(公告)号：US06582569B1
公开(公告)日：2003-06-24
申请号：US09685978
申请日：2000-10-10
申请人： Tony P. Chiang , Yu D. Cong , Peijun Ding , Jianming Fu , Howard H. Tang , Anish Tolia
发明人： Tony P. Chiang , Yu D. Cong , Peijun Ding , Jianming Fu , Howard H. Tang , Anish Tolia
IPC分类号： C23C1434
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes, a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole.
摘要翻译：用于溅射铜的直流磁控溅射反应器，其使用方法，以及促进自离子等离子体（SIP）溅射的屏蔽和其它部件，优选在低于5毫托的压力，优选低于1毫托的压力下。另外，使用SIP将第一铜层涂覆在窄的和深的通孔或沟槽中的方法。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 SIP铜层可以作为用常规溅射（PVD）或电化学电镀（ECP）进行孔填充的晶种和成核层。对于非常高的纵横比孔，通过化学气相沉积（CVD）在SIP铜成核层上沉积铜籽晶层，并且PVD或ECP完成孔填充。可以通过SIP和高密度等离子体溅射的组合来沉积铜籽晶层。对于非常窄的孔，CVD铜层可以填充孔。

9. 发明授权

US06893541B2 Multi-step process for depositing copper seed layer in a via 失效
标题翻译：用于在通孔中沉积铜晶种层的多步法
公开(公告)号：US06893541B2
公开(公告)日：2005-05-17
申请号：US10326496
申请日：2002-12-20
申请人： Tony P. Chiang , Yu D. Cong , Peijun Ding , Jianming Fu , Howard H. Tang , Anish Tolia
发明人： Tony P. Chiang , Yu D. Cong , Peijun Ding , Jianming Fu , Howard H. Tang , Anish Tolia
IPC分类号： C23C14/34 , C23C14/04 , C23C14/35 , C23C14/56 , H01J37/32 , H01J37/34 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes, a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole.
摘要翻译：用于溅射铜的直流磁控溅射反应器，其使用方法，以及屏蔽和促进自离子等离子体（SIP）溅射的其它部件，优选在低于5毫托的压力，优选低于1毫托的压力下。另外，使用SIP将第一铜层涂覆在窄的和深的通孔或沟槽中的方法。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 SIP铜层可以作为用常规溅射（PVD）或电化学电镀（ECP）进行孔填充的晶种和成核层。对于非常高的纵横比孔，通过化学气相沉积（CVD）在SIP铜成核层上沉积铜籽晶层，并且PVD或ECP完成孔填充。可以通过SIP和高密度等离子体溅射的组合来沉积铜籽晶层。对于非常窄的孔，CVD铜层可以填充孔。

10. 发明授权

US06413383B1 Method for igniting a plasma in a sputter reactor 有权
标题翻译：在溅射反应器中点燃等离子体的方法
公开(公告)号：US06413383B1
公开(公告)日：2002-07-02
申请号：US09685988
申请日：2000-10-10
申请人： Tony P. Chiang , Yu D. Cong , Peijun Ding , Jianming Fu , Howard H. Tang , Anish Tolia
发明人： Tony P. Chiang , Yu D. Cong , Peijun Ding , Jianming Fu , Howard H. Tang , Anish Tolia
IPC分类号： C23C1434
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A DC magnetron sputter reactor for sputtering copper, its method of use, particularly the ignition sequence, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). Preferably, the plasma is ignited in a cool process in which low power is applied to the target in the presence of a higher pressure of argon working gas. After ignition, the pressure is reduced, and target power is ramped up to a relatively high operational level to sputter deposit the film.
摘要翻译：用于溅射铜的DC磁控溅射反应器，其使用方法，特别是点火顺序，以及促进自离子等离子体（SIP）溅射的屏蔽和其它部件，优选在低于5毫托的压力，优选低于1毫托的压力下。 SIP铜层可以作为用常规溅射（PVD）或电化学电镀（ECP）进行孔填充的晶种和成核层。优选地，在存在较高压力的氩气工作气体的冷却过程中点燃等离子体，其中低功率被施加到目标物上。点火后，压力降低，目标功率上升到相对较高的操作水平以溅射沉积薄膜。

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