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1. 发明申请

US20110033958A1 METHOD FOR FORMING OXIDE FILM ON SILICON WAFER 有权
标题翻译：硅氧烷膜上形成氧化膜的方法
公开(公告)号：US20110033958A1
公开(公告)日：2011-02-10
申请号：US12921492
申请日：2009-03-24
申请人： Tsuyoshi Ohtsuki , Satoshi Tobe , Yasushi Mizusawa
发明人： Tsuyoshi Ohtsuki , Satoshi Tobe , Yasushi Mizusawa
IPC分类号： H01L21/66
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method for forming an oxide film on a silicon wafer, comprising: measuring surface roughness of the silicon wafer and/or crystallinity in a surface layer portion of the silicon wafer in advance; adjusting oxidizing conditions for the silicon wafer based on the measurement value; and forming the oxide film on the silicon wafer under the adjusted oxidizing conditions. As a result, there can be provided the method for forming an oxide film by which the oxidizing conditions can be adjusted based on a state of the surface and/or the surface layer of the silicon wafer before forming the oxide film and even an ultrathin oxide film can be thereby accurately formed.
摘要翻译：本发明提供一种在硅晶片上形成氧化膜的方法，包括：预先测量硅晶片的表面层部分中的硅晶片的表面粗糙度和/或结晶度; 基于测量值调整硅晶片的氧化条件; 以及在调整好的氧化条件下在硅晶片上形成氧化膜。结果，可以提供形成氧化膜的方法，其可以在形成氧化膜之前甚至基于硅晶片的表面和/或表面层的状态以及甚至超薄氧化物来调节氧化条件因此可以精确地形成膜。

2. 发明授权

US08043871B2 Method for forming oxide film on silicon wafer 有权
标题翻译：在硅晶片上形成氧化膜的方法
公开(公告)号：US08043871B2
公开(公告)日：2011-10-25
申请号：US12921492
申请日：2009-03-24
申请人： Tsuyoshi Ohtsuki , Satoshi Tobe , Yasushi Mizusawa
发明人： Tsuyoshi Ohtsuki , Satoshi Tobe , Yasushi Mizusawa
IPC分类号： H01L21/66
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method for forming an oxide film on a silicon wafer, comprising: measuring surface roughness of the silicon wafer and/or crystallinity in a surface layer portion of the silicon wafer in advance; adjusting oxidizing conditions for the silicon wafer based on the measurement value; and forming the oxide film on the silicon wafer under the adjusted oxidizing conditions. As a result, there can be provided the method for forming an oxide film by which the oxidizing conditions can be adjusted based on a state of the surface and/or the surface layer of the silicon wafer before forming the oxide film and even an ultrathin oxide film can be thereby accurately formed.
摘要翻译：本发明提供一种在硅晶片上形成氧化膜的方法，包括：预先测量硅晶片的表面层部分中的硅晶片的表面粗糙度和/或结晶度; 基于测量值调整硅晶片的氧化条件; 以及在调整好的氧化条件下在硅晶片上形成氧化膜。结果，可以提供形成氧化膜的方法，其可以在形成氧化膜之前甚至基于硅晶片的表面和/或表面层的状态以及甚至超薄氧化物来调节氧化条件因此可以精确地形成膜。

3. 发明授权

US08859422B2 Method of forming copper wiring and method and system for forming copper film 有权
标题翻译：形成铜线的方法及铜膜形成方法及系统
公开(公告)号：US08859422B2
公开(公告)日：2014-10-14
申请号：US13359138
申请日：2012-01-26
申请人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara , Kenzi Suzuki
发明人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara , Kenzi Suzuki
IPC分类号： H01L21/44
CPC分类号： H01L21/02104 , C23C14/025 , C23C14/046 , C23C14/345 , C23C14/541 , C23C14/5806 , C23C16/16 , H01J37/32899 , H01J37/34
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.
摘要翻译：提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得发生铜进入沟槽或孔的迁移。

4. 发明申请

US20140186977A1 METHOD FOR CALCULATING WARPAGE OF BONDED SOI WAFER AND METHOD FOR MANUFACTURING BONDED SOI WAFER 有权
标题翻译：用于计算粘结SOI波形的波纹的方法和制造粘合SOI波形的方法
公开(公告)号：US20140186977A1
公开(公告)日：2014-07-03
申请号：US14240432
申请日：2012-08-21
申请人： Isao Yokokawa , Hiroji Aga , Yasushi Mizusawa
发明人： Isao Yokokawa , Hiroji Aga , Yasushi Mizusawa
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , G01B11/306 , G01B21/20 , H01L21/76254 , H01L21/76256 , H01L22/20
摘要： A method for calculating a warpage of a bonded SOI wafer includes: assuming that the epitaxial growth SOI wafer is a silicon single crystal wafer having the same dopant concentration as dopant concentration of the bond wafer; calculating a warpage A that occurs at the time of performing the epitaxial growth relative to the assumed silicon single crystal wafer; calculating a warpage B caused due to a thickness of the BOX layer of the epitaxial growth SOI wafer; determining a measured value of a warpage of the base wafer before bonding as a warpage C; and calculating a sum of the warpages (A+B+C) as the warpage of the bonded SOI wafer.
摘要翻译：用于计算接合SOI晶片的翘曲的方法包括：假设外延生长SOI晶片是具有与接合晶片的掺杂剂浓度相同的掺杂剂浓度的硅单晶晶片; 计算在相对于假定的硅单晶晶片进行外延生长时发生的翘曲A; 计算由外延生长SOI晶片的BOX层的厚度引起的翘曲B. 在接合之前确定基底晶片的翘曲的测量值作为翘曲C; 并计算翘曲（A + B + C）的和作为接合的SOI晶片的翘曲。

5. 发明申请

US20130203250A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20130203250A1
公开(公告)日：2013-08-08
申请号：US13566515
申请日：2012-08-03
申请人： Tadahiro Ishizaka , Atsushi Gomi , Kenzi Suzuki , Tatsuo Hatano , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Atsushi Gomi , Kenzi Suzuki , Tatsuo Hatano , Yasushi Mizusawa
IPC分类号： H01L21/768
CPC分类号： H01L21/76841 , C23C14/02 , C23C14/046 , C23C16/02 , C23C16/045 , H01L21/02063 , H01L21/02126 , H01L21/28556 , H01L21/3105 , H01L21/67207 , H01L21/76814 , H01L21/76826 , H01L21/76843
摘要： A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.
摘要翻译：半导体器件制造方法包括：通过供给含有H离子和H基团的等离子体或包含NH x（x）的等离子体，将其表面是疏水性的并且形成在电介质膜中的掩埋凹槽的表面改性为亲水状态是1,2或3）离子和NH x自由基，形成在衬底上并含有硅，碳，氢和氧的电介质膜，埋入凹部的底部用下导电层暴露; 并且在凹部的亲水性表面上直接形成由Ru膜形成的粘合膜。该方法还包括在凹槽中形成导电路径的铜。

6. 发明申请

US20120064717A1 METHOD FOR FORMING CVD-RU FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES 审中-公开
标题翻译：形成CVD-RU膜的方法和制造半导体器件的方法
公开(公告)号：US20120064717A1
公开(公告)日：2012-03-15
申请号：US13230351
申请日：2011-09-12
申请人： Takara KATO , Yasushi Mizusawa , Tatsuo Hatano , Atsushi Gomi , Chiaki Yasumuro , Osamu Yokoyama
发明人： Takara KATO , Yasushi Mizusawa , Tatsuo Hatano , Atsushi Gomi , Chiaki Yasumuro , Osamu Yokoyama
IPC分类号： H01L21/768 , C23C16/16 , C23C16/56 , G06F19/00
CPC分类号： H01L23/53238 , C23C16/16 , C23C16/56 , H01L21/28556 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L2924/0002 , H01L2924/00
摘要： In a CVD-Ru film forming method, an Ru-film is formed on a substrate by means of CVD using a ruthenium carbonyl as a film-forming material before forming a Cu film. Then the substrate on which the aforementioned Ru film is formed is annealed in a hydrogen containing atmosphere.
摘要翻译：在CVD-Ru膜形成方法中，在形成Cu膜之前，通过使用羰基钌作为成膜材料的CVD在基板上形成Ru膜。然后将其上形成上述Ru膜的基板在含氢气氛中退火。

7. 发明授权

US08034406B2 Integrated substrate processing in a vacuum processing tool 有权
标题翻译：在真空加工工具中集成基板加工
公开(公告)号：US08034406B2
公开(公告)日：2011-10-11
申请号：US11526767
申请日：2006-09-26
申请人： Tadahiro Ishizaka , Masamichi Hara , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Masamichi Hara , Yasushi Mizusawa
IPC分类号： C23C16/00 , C23C14/00
CPC分类号： C23C16/54 , C23C14/566
摘要： A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer system configured to transfer the substrate under vacuum conditions between the plurality of processing systems, and performing an integrated deposition process on the substrate. The plurality of processing systems and the substrate transfer system maintain a base pressure of background gases at 6.8×10−8 Ton or lower, preferably 5×10−8 Torr or lower, during the integrated deposition process. According to one embodiment, the integrated process includes depositing a barrier metal layer on the substrate, and depositing a Cu layer on the barrier metal layer. According to another embodiment, the integrated process further includes depositing a Ru layer on the barrier metal layer, and depositing a Cu layer on the Ru layer.
摘要翻译：提供了用于Cu金属化中的集成基板处理的方法和系统。该方法包括在真空处理工具中提供衬底，该真空处理工具包含配置成处理衬底的多个处理系统和被配置为在多个处理系统之间的真空条件下传送衬底的衬底传送系统，以及对基质。在整个沉积过程中，多个处理系统和基板传送系统将背景气体的基础压力保持在6.8×10-8吨或更低，优选5×10-8托或更低。根据一个实施例，集成工艺包括在衬底上沉积阻挡金属层，以及在阻挡金属层上沉积Cu层。根据另一实施例，集成工艺还包括在阻挡金属层上沉积Ru层，以及在Ru层上沉积Cu层。

8. 发明授权

US07790626B2 Plasma sputtering film deposition method and equipment 有权
标题翻译：等离子体溅射膜沉积方法和设备
公开(公告)号：US07790626B2
公开(公告)日：2010-09-07
申请号：US11577505
申请日：2005-10-18
申请人： Taro Ikeda , Kenji Suzuki , Tatsuo Hatano , Yasushi Mizusawa
发明人： Taro Ikeda , Kenji Suzuki , Tatsuo Hatano , Yasushi Mizusawa
IPC分类号： H01L21/00
CPC分类号： H01L21/2855 , C23C14/046 , C23C14/3471 , H01J37/34 , H01J2237/3327 , H01L21/76844 , H01L21/76865 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： The present invention relates to a technology for depositing a thin metal film by using a plasma sputtering technique on a top surface of a target object, e.g., a semiconductor wafer or the like, and on a surface of a recess opened at the top surface. The film deposition method is characterized in that a film deposition process to deposit a metal film on a sidewall of the recess by generating metal ions by way of making a metal target sputter with a plasma generated from a discharge gas in the processing container and by applying to the mounting table a bias power to cause a metal film deposition based on a metal ion attraction and a sputter etching based on the plasma generated from the discharge gas simultaneously on the top surface of the target object.
摘要翻译：本发明涉及通过使用等离子体溅射技术在目标物体（例如半导体晶片等）的顶面上以及在顶面开口的凹部的表面上沉积金属薄膜的技术。膜沉积方法的特征在于，通过使金属靶溅射在处理容器中由放电气体产生的等离子体溅射金属离子，并且通过应用在安装台上施加基于金属离子吸引的金属膜沉积和基于从放电气体产生的等离子体在目标物体的顶面上产生的溅射蚀刻的偏置功率。

9. 发明授权

US09062374B2 Method for film formation, apparatus for film formation, and computer-readable recording medium 有权
标题翻译：成膜方法，成膜装置和计算机可读记录介质
公开(公告)号：US09062374B2
公开(公告)日：2015-06-23
申请号：US12933979
申请日：2009-01-23
申请人： Masamichi Hara , Yasushi Mizusawa , Satoshi Taga , Atsushi Gomi , Tatsuo Hatano
发明人： Masamichi Hara , Yasushi Mizusawa , Satoshi Taga , Atsushi Gomi , Tatsuo Hatano
IPC分类号： C23C16/16 , C23C16/455 , H01L21/285
CPC分类号： C23C16/45559 , C23C16/16 , H01L21/28562
摘要： Disclosed is a method for film formation, comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate.
摘要翻译：公开了一种成膜方法，包括使含有含羰基金属的处理气体和含一氧化碳的载气的处理气流流入待处理的基板的外周的上侧的区域衬底的直径方向，同时避免衬底的表面并将金属羰基从处理气流扩散到衬底的表面中，以在衬底的表面上形成金属膜。

10. 发明授权

US08408025B2 Raw material recovery method and trapping mechanism for recovering raw material 有权
标题翻译：原料回收方法及原料回收机制
公开(公告)号：US08408025B2
公开(公告)日：2013-04-02
申请号：US13057372
申请日：2009-08-04
申请人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Kaoru Yamamoto , Chiaki Yasumuro
发明人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Kaoru Yamamoto , Chiaki Yasumuro
IPC分类号： F25J1/00 , F25J1/02 , C23C16/00 , B01D47/00 , B01J19/00
CPC分类号： C23C16/4412 , B01D53/002 , B01D53/62 , B01D53/75 , B01D2257/706 , B01D2258/0216 , B01D2259/416 , C23C16/16 , Y02C20/30
摘要： A raw material recovery method for recovering a raw material of an organic metallic compound, which has the property of being stable toward a specific refrigerant without being decomposed thereby, from exhaust gas discharged from a treatment container in which a metallic thin film is formed on the surface of an object to be treated by using source gas obtained by vaporizing the raw material is characterized by being provided with a solidification step for solidifying the unreacted source gas by cooling the exhaust gas by bringing the exhaust gas into contact with the refrigerant and reprecipitating the raw material, and a recovery step for separating and recovering the raw material reprecipitated in the solidification step from the refrigerant. To provide a method for controlling an exhaust gas flow rate so that flow of gas in a processing chamber becomes uniform.
摘要翻译：一种原料回收方法，用于从其中形成有金属薄膜的处理容器排出的废气中回收具有对特定制冷剂稳定的特性的有机金属化合物的原料，通过使用通过蒸发原料获得的源气体处理的物体的表面的特征在于具有固化步骤，用于通过使废气与制冷剂接触而冷却排气来固化未反应的源气体，并再次沉淀原料和用于分离和回收在固化步骤中从制冷剂中再沉淀的原料的回收步骤。提供一种用于控制废气流量使得处理室中的气体流变得均匀的方法。

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