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1. 发明授权

US08982611B2 Magnetic memory element and magnetic memory apparatus 有权
标题翻译：磁存储元件和磁存储装置
公开(公告)号：US08982611B2
公开(公告)日：2015-03-17
申请号：US13526961
申请日：2012-06-19
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Junichi Akiyama
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Junichi Akiyama
IPC分类号： G11C11/00 , G11C11/16
CPC分类号： G11C11/1673 , G11C11/161 , Y10S977/933 , Y10S977/935
摘要： A magnetic memory element includes a first magnetic layer, a second magnetic layer, a first intermediate layer, a first magnetic wire, a first input unit, and a first detection unit. The first magnetic layer has magnetization fixed. The second magnetic layer has magnetization which is variable. The first intermediate layer is between the first magnetic layer and the second magnetic layer. The first magnetic wire extends in a first direction perpendicular to a direction connecting from the first magnetic layer to the second magnetic layer and is adjacent to the second magnetic layer. In addition, write-in is performed by propagating a first spin wave through the first magnetic wire and by passing a first current from the first magnetic layer toward the second magnetic layer. Read-out is performed by passing a second current from the first magnetic layer toward the second magnetic layer.
摘要翻译：磁存储元件包括第一磁性层，第二磁性层，第一中间层，第一磁性线，第一输入单元和第一检测单元。第一磁性层具有固定的磁化。第二磁性层具有可变的磁化。第一中间层位于第一磁性层和第二磁性层之间。第一磁性线沿垂直于从第一磁性层连接到第二磁性层的方向的第一方向延伸并与第二磁性层相邻。此外，通过将第一自旋波传播通过第一磁线并通过使第一电流从第一磁性层向第二磁性层传递来执行写入。通过将第二电流从第一磁性层传递到第二磁性层来进行读出。

2. 发明申请

US20130077396A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY APPARATUS 有权
标题翻译：磁记忆元件和磁记忆装置
公开(公告)号：US20130077396A1
公开(公告)日：2013-03-28
申请号：US13526961
申请日：2012-06-19
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Junichi Akiyama
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Junichi Akiyama
IPC分类号： G11C11/15
CPC分类号： G11C11/1673 , G11C11/161 , Y10S977/933 , Y10S977/935
摘要： A magnetic memory element includes a first magnetic layer, a second magnetic layer, a first intermediate layer, a first magnetic wire, a first input unit, and a first detection unit. The first magnetic layer has magnetization fixed. The second magnetic layer has magnetization which is variable. The first intermediate layer is between the first magnetic layer and the second magnetic layer. The first magnetic wire extends in a first direction perpendicular to a direction connecting from the first magnetic layer to the second magnetic layer and is adjacent to the second magnetic layer. In addition, write-in is performed by propagating a first spin wave through the first magnetic wire and by passing a first current from the first magnetic layer toward the second magnetic layer. Read-out is performed by passing a second current from the first magnetic layer toward the second magnetic layer.
摘要翻译：磁存储元件包括第一磁性层，第二磁性层，第一中间层，第一磁性线，第一输入单元和第一检测单元。第一磁性层具有固定的磁化。第二磁性层具有可变的磁化。第一中间层位于第一磁性层和第二磁性层之间。第一磁性线沿垂直于从第一磁性层连接到第二磁性层的方向的第一方向延伸并与第二磁性层相邻。另外，通过将第一自旋波传播通过第一磁线并且通过使第一电流从第一磁性层向第二磁性层传递来执行写入。通过将第二电流从第一磁性层传递到第二磁性层来执行读出。

3. 发明授权

US09190168B2 Magnetic memory and manufacturing method thereof 有权
标题翻译：磁记忆及其制造方法
公开(公告)号：US09190168B2
公开(公告)日：2015-11-17
申请号：US13425471
申请日：2012-03-21
申请人： Shiho Nakamura , Tsuyoshi Kondo , Hirofumi Morise , Junichi Akiyama
发明人： Shiho Nakamura , Tsuyoshi Kondo , Hirofumi Morise , Junichi Akiyama
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1675
摘要： A magnetic memory includes a first magnetic line, an electrode, a write-in portion, a second magnetic line, and a spin-wave generator. The first magnetic line has a plurality of magnetic domains and domain walls, the domain wall separating the magnetic domain. The electrode is provided to both ends of the first magnetic line. The write-in portion is provided adjacent to the first magnetic line. The second magnetic line is provided so that the second magnetic line intersects with the first magnetic line. The spin-wave generator provided to one end of the second magnetic line. The spin-wave detector provided to the other end of the second magnetic line.
摘要翻译：磁存储器包括第一磁线，电极，写入部分，第二磁线和自旋波发生器。第一磁线具有多个磁畴和畴壁，畴壁分离磁畴。电极设置在第一磁力线的两端。写入部分设置成与第一磁线相邻。第二磁线被设置成使得第二磁线与第一磁线相交。提供给第二磁线的一端的自旋波发生器。旋转波检测器设置在第二磁线的另一端。

4. 发明申请

US20130083595A1 MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：磁记忆及其制造方法
公开(公告)号：US20130083595A1
公开(公告)日：2013-04-04
申请号：US13425471
申请日：2012-03-21
申请人： Shiho Nakamura , Tsuyoshi Kondo , Hirofumi Morise , Junichi Akiyama
发明人： Shiho Nakamura , Tsuyoshi Kondo , Hirofumi Morise , Junichi Akiyama
IPC分类号： G11C11/14 , H01L21/8246
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1675
摘要： A magnetic memory includes a first magnetic line, an electrode, a write-in portion, a second magnetic line, and a spin-wave generator. The first magnetic line has a plurality of magnetic domains and domain walls, the domain wall separating the magnetic domain. The electrode is provided to both ends of the first magnetic line. The write-in portion is provided adjacent to the first magnetic line. The second magnetic line is provided so that the second magnetic line intersects with the first magnetic line. The spin-wave generator provided to one end of the second magnetic line. The spin-wave detector provided to the other end of the second magnetic line.
摘要翻译：磁存储器包括第一磁线，电极，写入部分，第二磁线和自旋波发生器。第一磁线具有多个磁畴和畴壁，畴壁分离磁畴。电极设置在第一磁力线的两端。写入部分设置成与第一磁线相邻。第二磁线被设置成使得第二磁线与第一磁线相交。提供给第二磁线的一端的自旋波发生器。旋转波检测器设置在第二磁线的另一端。

5. 发明申请

US20130077395A1 MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆装置
公开(公告)号：US20130077395A1
公开(公告)日：2013-03-28
申请号：US13422030
申请日：2012-03-16
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： G11C11/14 , G11C11/161 , G11C11/1675
摘要： A magnetic memory device comprises a magnetic wire extending in a first direction, a pair of first electrodes operable to pass a current through the magnetic wire in the first direction or in an opposite direction to the first direction, a first insulating layer provided on the magnetic wire in a second direction being substantially perpendicular to the first direction, a plurality of second electrodes provided on the first insulating layer and provided at specified interval in the second direction, and a third electrode electrically connected to the plurality of second electrodes.
摘要翻译：一种磁存储器件包括沿第一方向延伸的磁线，一对第一电极，可操作以使电流沿第一方向或与第一方向相反的方向通过磁线;第一绝缘层，设置在磁性在第二方向上的导线基本上垂直于第一方向;多个第二电极，设置在第一绝缘层上，并在第二方向上以规定的间隔设置，第三电极与多个第二电极电连接。

6. 发明授权

US08745120B2 Adder 失效
标题翻译：加法器
公开(公告)号：US08745120B2
公开(公告)日：2014-06-03
申请号：US13349871
申请日：2012-01-13
申请人： Hirofumi Morise , Shiho Nakamura , Daisuke Saida , Tsuyoshi Kondo
发明人： Hirofumi Morise , Shiho Nakamura , Daisuke Saida , Tsuyoshi Kondo
IPC分类号： G06F7/50
CPC分类号： G06F7/388
摘要： According to an embodiment, an adder includes first and second wave computing units and a threshold wave computing unit. Each of the first and second wave computing units includes a pair of first input sections, a first wave transmission medium having a continuous film including a magnetic body connected to the first input sections, and a first wave detector outputting a result of computation by spin waves induced in the first wave transmission medium by the signals corresponding to the two bit values. The threshold wave computing unit includes a plurality of third input sections, a third wave transmission medium having a continuous film including a magnetic body connected to the third input sections, and a third wave detector a result of computation by spin waves induced in the third wave transmission medium.
摘要翻译：根据实施例，加法器包括第一和第二波计算单元和阈值波计算单元。第一和第二波形计算单元中的每一个包括一对第一输入部分，具有包括连接到第一输入部分的磁体的连续膜的第一波传播介质和输出通过自旋波的计算结果的第一波检测器在第一波传输介质中通过对应于两位值的信号感应。阈值波计算单元包括多个第三输入部分，具有包括连接到第三输入部分的磁体的连续胶片的第三波传播介质，以及第三波检测器，由第三波中感应的自旋波的计算结果传输介质。

7. 发明授权

US08644057B2 Magnetic memory and magnetic memory apparatus 有权
标题翻译：磁记忆体和磁记忆装置
公开(公告)号：US08644057B2
公开(公告)日：2014-02-04
申请号：US13235664
申请日：2011-09-19
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Yoshinari Kurosaki
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Yoshinari Kurosaki
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L29/82 , H01L43/08
摘要： A magnetic memory includes a first magnetic layer, a second magnetic layer, a third magnetic layer, a first intermediate layer, a second intermediate layer, an insulator film, and an electrode. The third magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction being perpendicular to the plane of both the first magnetic layer and the second magnetic layer. The insulator film is provided on the third magnetic layer in a second direction perpendicular to the first direction. The electrode is provided on the insulator film so that the insulator is sandwiched between the third magnetic layer and the electrode in the second direction. In addition, a positive voltage is applied to the electrode and a first current passes from the first magnetic layer to the second magnetic layer, thereby writing information to the second magnetic layer.
摘要翻译：磁存储器包括第一磁性层，第二磁性层，第三磁性层，第一中间层，第二中间层，绝缘膜和电极。第三磁性层在垂直于第一磁性层和第二磁性层的平面的第一方向上设置在第一磁性层和第二磁性层之间。绝缘体膜在与第一方向垂直的第二方向上设置在第三磁性层上。电极设置在绝缘膜上，使得绝缘体沿第二方向被夹在第三磁性层和电极之间。此外，向电极施加正电压，并且第一电流从第一磁性层流到第二磁性层，从而将信息写入第二磁性层。

8. 发明申请

US20120061782A1 SPIN WAVE DEVICE 失效
标题翻译：旋转波形装置
公开(公告)号：US20120061782A1
公开(公告)日：2012-03-15
申请号：US13229966
申请日：2011-09-12
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
IPC分类号： H01L43/02
CPC分类号： H01L43/08 , H01F10/3268 , H01F10/3286
摘要： A spin wave device comprises a metal layer, a pinned layer, a nonmagnetic layer, a free layer, an antiferromagnetic layer, a first electrode, a first insulator layer, and a second electrode. The pinned layer has a magnetization whose direction is fixed. The free layer has a magnetization whose direction is variable.
摘要翻译：自旋波装置包括金属层，钉扎层，非磁性层，自由层，反铁磁层，第一电极，第一绝缘体层和第二电极。钉扎层具有方向固定的磁化。自由层具有方向可变的磁化。

9. 发明申请

US20110234216A1 SPIN WAVE ELEMENT 有权
标题翻译：旋转波浪元件
公开(公告)号：US20110234216A1
公开(公告)日：2011-09-29
申请号：US12880606
申请日：2010-09-13
申请人： Shiho Nakamura , Daisuke Saida , Hirofumi Morise , Tsuyoshi Kondo
发明人： Shiho Nakamura , Daisuke Saida , Hirofumi Morise , Tsuyoshi Kondo
IPC分类号： G01R33/02
CPC分类号： G01R33/1284 , G11C11/14 , G11C11/161 , H01L27/222 , H01L27/226 , H01L29/66984
摘要： A spin wave element includes a substrate, a multilayer, a detecting portion, and two or more input portions. The multilayer having a lamination direction thereof is formed on the substrate and includes a first ferromagnetic layer. The first ferromagnetic layer has magnetization whose direction is in the lamination direction. The detecting portion and the input portions are formed on the multilayer and separated from each other by a first nonmagnetic layer. In addition, a portion of an outer edge of the multilayer viewed from the lamination direction makes a portion of one ellipsoid. The detecting portion and one of the input portions are located on the long axis of the one ellipsoid. The portion of the one ellipsoid is located on a side of one of the input portions.
摘要翻译：自旋波元件包括基板，多层，检测部分和两个或更多个输入部分。具有层压方向的多层形成在基板上，并且包括第一铁磁层。第一铁磁层具有方向在层叠方向上的磁化。检测部分和输入部分形成在多层上并且通过第一非磁性层彼此分离。此外，从层叠方向观察的多层的外边缘的一部分形成一个椭圆体的一部分。检测部分和输入部分之一位于一个椭圆体的长轴上。一个椭圆体的一部分位于一个输入部分的一侧。

10. 发明授权

US08634237B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US08634237B2
公开(公告)日：2014-01-21
申请号：US13422030
申请日：2012-03-16
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
IPC分类号： G11C11/14
CPC分类号： G11C11/14 , G11C11/161 , G11C11/1675
摘要： A magnetic memory device comprises a magnetic wire extending in a first direction, a pair of first electrodes operable to pass a current through the magnetic wire in the first direction or in an opposite direction to the first direction, a first insulating layer provided on the magnetic wire in a second direction being substantially perpendicular to the first direction, a plurality of second electrodes provided on the first insulating layer and provided at specified interval in the second direction, and a third electrode electrically connected to the plurality of second electrodes.
摘要翻译：一种磁存储器件包括沿第一方向延伸的磁线，一对第一电极，可操作以使电流沿第一方向或与第一方向相反的方向通过磁线;第一绝缘层，设置在磁性在第二方向上的导线基本上垂直于第一方向;多个第二电极，设置在第一绝缘层上，并在第二方向上以规定的间隔设置，第三电极与多个第二电极电连接。

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