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1. 发明申请

US20070086718A1 Optical element and manufacturing method thereof 审中-公开
标题翻译：光学元件及其制造方法
公开(公告)号：US20070086718A1
公开(公告)日：2007-04-19
申请号：US11343232
申请日：2006-01-31
申请人： Tsuyoshi Aoki , Masao Kondo , Kazuaki Kurihara , Makoto Kuwabara
发明人： Tsuyoshi Aoki , Masao Kondo , Kazuaki Kurihara , Makoto Kuwabara
IPC分类号： G02B6/10
CPC分类号： G02B6/132 , B82Y20/00 , G02B6/1225
摘要： An optical element is constituted by providing an optical waveguide formed with a piezoelectric material, a photonic crystal structure provided within the optical waveguide, a pair of control electrodes, which are provided so as to sandwich the upper and lower surfaces of the optical waveguide, for applying a voltage to the optical waveguide and supporting parts formed at the both ends of the lower control electrode.
摘要翻译：光学元件通过提供形成有压电材料的光波导，设置在光波导内的光子晶体结构，设置成将光波导的上表面和下表面夹持的一对控制电极，向光波导施加电压，在下部控制电极的两端形成支撑部。

2. 发明授权

US07317860B2 Optical device having photonic crystal structure 失效
标题翻译：具有光子晶体结构的光学器件
公开(公告)号：US07317860B2
公开(公告)日：2008-01-08
申请号：US11365820
申请日：2006-03-02
申请人： Tsuyoshi Aoki , Masao Kondo , Kazuaki Kurihara
发明人： Tsuyoshi Aoki , Masao Kondo , Kazuaki Kurihara
IPC分类号： G02B6/10 , G02B6/02
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/2937 , G02F1/011 , G02F1/0126 , G02F1/0147 , G02F1/0338 , G02F1/035 , G02F1/0541 , G02F1/0558 , G02F1/065 , G02F1/3515 , G02F1/3553 , G02F2202/32 , G02F2203/01
摘要： A photonic crystal structural body has a structure that a second mediums whose refractive index changes with an external field is periodically distributed in a first medium whose refractive index changes with the external field. An external field generator applies the external field to the photonic crystal structural body. It is possible to increase a change amount of a photonic band gap.
摘要翻译：光子晶体结构体具有折射率随外部场变化的第二介质周期性地分布在其折射率随外部场变化的第一介质中的结构。外部场发生器将外部场域应用于光子晶体结构体。可以增加光子带隙的变化量。

3. 发明申请

US20070077015A1 Optical device having photonic crystal structure 失效
标题翻译：具有光子晶体结构的光学器件
公开(公告)号：US20070077015A1
公开(公告)日：2007-04-05
申请号：US11365820
申请日：2006-03-02
申请人： Tsuyoshi Aoki , Masao Kondo , Kazuaki Kurihara
发明人： Tsuyoshi Aoki , Masao Kondo , Kazuaki Kurihara
IPC分类号： G02B6/02 , G02B6/032
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/2937 , G02F1/011 , G02F1/0126 , G02F1/0147 , G02F1/0338 , G02F1/035 , G02F1/0541 , G02F1/0558 , G02F1/065 , G02F1/3515 , G02F1/3553 , G02F2202/32 , G02F2203/01
摘要： A photonic crystal structural body has a structure that a second mediums whose refractive index changes with an external field is periodically distributed in a first medium whose refractive index changes with the external field. An external field generator applies the external field to the photonic crystal structural body. It is possible to increase a change amount of a photonic band gap.
摘要翻译：光子晶体结构体具有折射率随外部场变化的第二介质周期性地分布在其折射率随外部场变化的第一介质中的结构。外部场发生器将外部场域应用于光子晶体结构体。可以增加光子带隙的变化量。

4. 发明授权

US07218798B2 Optical deflection element and optical switch 失效
标题翻译：光学偏转元件和光学开关
公开(公告)号：US07218798B2
公开(公告)日：2007-05-15
申请号：US11071209
申请日：2005-03-04
申请人： Tsuyoshi Aoki , Masao Kondo , Kazuaki Kurihara
发明人： Tsuyoshi Aoki , Masao Kondo , Kazuaki Kurihara
IPC分类号： G02F1/295
CPC分类号： G02F1/313 , B82Y20/00 , G02B6/1225 , G02B6/3546 , G02F2202/32
摘要： An optical deflection element is configured to include a prism electrode provided on an optical waveguide, a first photonic crystal structure provided forward of the prism electrode in a light traveling direction being a position after a light passes through the prism electrode, a control electrode provided to confront a counter electrode layer via the optical waveguide on the first photonic crystal structure, and a second photonic crystal structure provided in the lateral direction of the prism electrode in parallel with the light traveling direction.
摘要翻译：光学偏转元件被配置为包括设置在光波导上的棱镜电极，在光行进方向上设置在棱镜电极的前方的第一光子晶体结构是光通过棱镜电极之后的位置，控制电极设置于通过第一光子晶体结构上的光波导面对对电极层，以及在与光行进方向平行的棱镜电极的横向方向上设置的第二光子晶体结构。

5. 发明申请

US20060088240A1 Optical deflection element and optical switch 失效
标题翻译：光学偏转元件和光学开关
公开(公告)号：US20060088240A1
公开(公告)日：2006-04-27
申请号：US11071209
申请日：2005-03-04
申请人： Tsuyoshi Aoki , Masao Kondo , Kazuaki Kurihara
发明人： Tsuyoshi Aoki , Masao Kondo , Kazuaki Kurihara
IPC分类号： G02B6/26
CPC分类号： G02F1/313 , B82Y20/00 , G02B6/1225 , G02B6/3546 , G02F2202/32
摘要： An optical deflection element is configured to include a prism electrode provided on an optical waveguide, a first photonic crystal structure provided forward of the prism electrode in a light traveling direction being a position after a light passes through the prism electrode, a control electrode provided to confront a counter electrode layer via the optical waveguide on the first photonic crystal structure, and a second photonic crystal structure provided in the lateral direction of the prism electrode in parallel with the light traveling direction.
摘要翻译：光学偏转元件被配置为包括设置在光波导上的棱镜电极，在光行进方向上设置在棱镜电极的前方的第一光子晶体结构是光通过棱镜电极之后的位置，控制电极设置于通过第一光子晶体结构上的光波导面对对电极层，以及在与光行进方向平行的棱镜电极的横向方向上设置的第二光子晶体结构。

6. 发明授权

US07427515B2 Electronic element including ferroelectric substance film and method of manufacturing the same 有权
标题翻译：电子元件包括铁电体膜及其制造方法
公开(公告)号：US07427515B2
公开(公告)日：2008-09-23
申请号：US11093202
申请日：2005-03-30
申请人： Masao Kondo , Kazuaki Kurihara
发明人： Masao Kondo , Kazuaki Kurihara
IPC分类号： H01L29/72
CPC分类号： G02F1/0553 , H01L21/28291 , H01L29/516 , H01L29/78391
摘要： A laminated film structure, method of manufacturing, and a preferable electronic element using the structure. The effective polarization into the electric field can be realized in the direction of crystal axis by enhancing the crystal property and alignment property of the ferroelectric substance film formed through epitaxial growth with reference to the plane alignment of semiconductor substrate. After the yttrium stabilized zirconium film and a film of the rock salt structure are sequentially formed with epitaxial growth on a semiconductor substrate, the ferroelectric substance film of simple Perovskite structure is also formed with epitaxial growth. The ferroelectric substance film can improve the crystal property and alignment property thereof by rotating the plane for 45 degrees within the plane for the crystal axis of the yttrium stabilized zirconium.
摘要翻译：叠层膜结构，制造方法以及使用该结构的优选的电子元件。参照半导体衬底的平面取向，通过增强通过外延生长形成的铁电体物质膜的晶体特性和取向性能，可以在晶轴的方向上实现电场的有效极化。在半导体衬底上依次形成钇稳定的锆膜和岩盐结构的薄膜外延生长后，外延生长也形成简单的钙钛矿结构的铁电物质膜。铁素体膜可以通过在钇稳定化锆的晶轴的平面内旋转45度的平面来提高其结晶性和取向性。

7. 发明申请

US20050218456A1 Electronic element including ferroelectric substance film and method of manufacturing the same 有权
标题翻译：电子元件包括铁电体膜及其制造方法
公开(公告)号：US20050218456A1
公开(公告)日：2005-10-06
申请号：US11093202
申请日：2005-03-30
申请人： Masao Kondo , Kazuaki Kurihara
发明人： Masao Kondo , Kazuaki Kurihara
IPC分类号： G02F1/035 , G02F1/295 , H01L21/28 , H01L21/8246 , H01L27/105 , H01L29/51 , H01L29/76 , H01L29/78 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/29 , H01L41/316 , H01L41/317 , H01L41/318 , H03H3/08 , H03H9/145
CPC分类号： G02F1/0553 , H01L21/28291 , H01L29/516 , H01L29/78391
摘要： A laminated film structure, method of manufacturing, and a preferable electronic element using the structure. The effective polarization into the electric field can be realized in the direction of crystal axis by enhancing the crystal property and alignment property of the ferroelectric substance film formed through epitaxial growth with reference to the plane alignment of semiconductor substrate. After the yttrium stabilized zirconium film and a film of the rock salt structure are sequentially formed with epitaxial growth on a semiconductor substrate, the ferroelectric substance film of simple Perovskite structure is also formed with epitaxial growth. The ferroelectric substance film can improve the crystal property and alignment property thereof by rotating the plane for 45 degrees within the plane for the crystal axis of the yttrium stabilized zirconium.
摘要翻译：叠层膜结构，制造方法以及使用该结构的优选的电子元件。参照半导体衬底的平面取向，通过增强通过外延生长形成的铁电体物质膜的晶体特性和取向性能，可以在晶轴的方向上实现电场的有效极化。在半导体衬底上依次形成钇稳定的锆膜和岩盐结构的薄膜外延生长后，外延生长也形成简单的钙钛矿结构的铁电物质膜。铁素体膜可以通过在钇稳定化锆的晶轴的平面内旋转45度的平面来提高其结晶性和取向性。

8. 发明授权

US07858959B2 Electronic element including ferroelectric substance film and method of manufacturing the same 有权
标题翻译：电子元件包括铁电体膜及其制造方法
公开(公告)号：US07858959B2
公开(公告)日：2010-12-28
申请号：US12149962
申请日：2008-05-12
申请人： Masao Kondo , Kazuaki Kurihara
发明人： Masao Kondo , Kazuaki Kurihara
IPC分类号： H01L29/72
CPC分类号： G02F1/0553 , H01L21/28291 , H01L29/516 , H01L29/78391
摘要： A laminated film structure, method of manufacturing, and a preferable electronic element using the structure. The effective polarization into the electric field can be realized in the direction of crystal axis by enhancing the crystal property and alignment property of the ferroelectric substance film formed through epitaxial growth with reference to the plane alignment of semiconductor substrate. After the yttrium stabilized zirconium film and a film of the rock salt structure are sequentially formed with epitaxial growth on a semiconductor substrate, the ferroelectric substance film of simple Perovskite structure is also formed with epitaxial growth. The ferroelectric substance film can improve the crystal property and alignment property thereof by rotating the plane for 45 degrees within the plane for the crystal axis of the yttrium stabilized zirconium.
摘要翻译：叠层膜结构，制造方法以及使用该结构的优选的电子元件。参照半导体衬底的平面取向，通过增强通过外延生长形成的铁电体物质膜的晶体特性和取向性能，可以在晶轴的方向上实现电场的有效极化。在半导体衬底上依次形成钇稳定的锆膜和岩盐结构的薄膜外延生长后，外延生长也形成简单的钙钛矿结构的铁电物质膜。铁素体膜可以通过在钇稳定化锆的晶轴的平面内旋转45度的平面来提高其结晶性和取向性。

9. 发明授权

US06943397B2 Device having capacitor and its manufacture 有权
标题翻译：具有电容器及其制造的装置
公开(公告)号：US06943397B2
公开(公告)日：2005-09-13
申请号：US10647246
申请日：2003-08-26
申请人： Masao Kondo , Hideki Yamawaki , Kenji Maruyama , Kazuaki Kurihara , Masaharu Hida , Shigeyoshi Umemiya , Masaki Kurasawa
发明人： Masao Kondo , Hideki Yamawaki , Kenji Maruyama , Kazuaki Kurihara , Masaharu Hida , Shigeyoshi Umemiya , Masaki Kurasawa
IPC分类号： H01L27/04 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8246 , H01L27/105 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/318 , H03H3/08 , H03H9/02 , H01L29/76
CPC分类号： H01L28/55 , H01L21/31691 , H01L28/60 , H03H9/02574
摘要： A device having a capacitor element includes: an underlying body having a non-orientated first surface; a lower electrode formed on the first surface of the underlying body, the lower electrode containing conductive metal oxide and not containing noble metal, such as LaNiO3, the conductive metal oxide having a (0 0 1) orientated ABO3 type pervskite structure; a ferroelectric layer formed on the lower electrode, having a rhombohedral ABO3 type pervskite structure, the ferroelectric layer being preferentially (0 0 1) orientated in conformity with the orientation of the lower electrode, and an upper electrode formed on the ferroelectric layer.
摘要翻译：具有电容器元件的器件包括：具有非取向第一表面的下体; 形成在下体的第一表面上的下电极，下电极包含导电金属氧化物，不含贵金属，例如LaNiO 3，导电金属氧化物具有（0 1）取向 ABO 3型钙钛矿结构; 形成在下电极上的具有菱形ABO 3型钙钛矿结构的铁电层，所述铁电层优选（0 1）与所述下电极的取向一致，所述上电极形成在铁电层上。

10. 发明授权

US06747317B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06747317B2
公开(公告)日：2004-06-08
申请号：US10093519
申请日：2002-03-11
申请人： Masao Kondo , Kazuaki Kurihara , Kenji Maruyama , Hideki Yamawaki
发明人： Masao Kondo , Kazuaki Kurihara , Kenji Maruyama , Hideki Yamawaki
IPC分类号： H01L2701
CPC分类号： H01L21/02266 , C23C14/28 , C30B23/02 , C30B25/18 , C30B29/32 , H01L21/02197 , H01L21/02293 , H01L21/02304 , H01L21/31691
摘要： The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.
摘要翻译：本发明提供一种包括单晶硅衬底的半导体器件; 以及在单晶硅衬底上通过外延生长形成具有钙钛矿结构的单晶氧化物薄膜。单晶氧化物薄膜直接与单晶硅衬底的表面接触，并且含有与硅反应的二价金属。

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