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1. 发明申请

US20100252903A1 PHOTOELECTRIC TRANSDUCER AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：光电转换器及其制造方法
公开(公告)号：US20100252903A1
公开(公告)日：2010-10-07
申请号：US12742319
申请日：2008-10-30
申请人： Tsutomu Yamazaki , Satoshi Okamoto , Jumpei Imoto
发明人： Tsutomu Yamazaki , Satoshi Okamoto , Jumpei Imoto
IPC分类号： H01L31/02 , H01L31/18
CPC分类号： H01L31/022433 , H01L31/02245 , Y02E10/50
摘要： The surrounding length of a junction separation portion can be shortened to improve an insulating resistance in order to provide a solar cell with highly efficiency.In a photoelectric transducer of the type where a light-receiving surface electrode is wired to another electrode on a back surface via a through electrode passing through a semiconductor substrate of a first conductive type, the photoelectric transducer comprises: a junction separation portion made around the through electrode on a back surface of the semiconductor substrate; a dielectric layer formed for covering the junction separation portion, the through electrode penetrating the dielectric layer; and a back electrode provided on the dielectric layer and coupled to the through electrode which is connected to the light-receiving surface electrode.
摘要翻译：为了提供高效率的太阳能电池，可以缩短结分离部分的周长，提高绝缘电阻。在光接收表面电极通过穿过第一导电类型的半导体衬底的贯穿电极而被连接到背面上的另一电极的类型的光电变换器中，光电变换器包括：接合分离部分在所述半导体基板的背面上的贯通电极; 形成用于覆盖结分离部分的电介质层，穿透电介质层的通孔; 以及背面电极，设置在电介质层上并与连接到受光面电极的通电极耦合。

2. 发明授权

US08338903B2 Photoelectric transducer and manufacturing method therefor 有权
标题翻译：光电传感器及其制造方法
公开(公告)号：US08338903B2
公开(公告)日：2012-12-25
申请号：US12742319
申请日：2008-10-30
申请人： Tsutomu Yamazaki , Satoshi Okamoto , Jumpei Imoto
发明人： Tsutomu Yamazaki , Satoshi Okamoto , Jumpei Imoto
IPC分类号： H01L29/72
CPC分类号： H01L31/022433 , H01L31/02245 , Y02E10/50
摘要： The surrounding length of a junction separation portion can be shortened to improve an insulating resistance in order to provide a solar cell with highly efficiency.In a photoelectric transducer of the type where a light-receiving surface electrode is wired to another electrode on a back surface via a through electrode passing through a semiconductor substrate of a first conductive type, the photoelectric transducer comprises: a junction separation portion made around the through electrode on a back surface of the semiconductor substrate; a dielectric layer formed for covering the junction separation portion, the through electrode penetrating the dielectric layer; and a back electrode provided on the dielectric layer and coupled to the through electrode which is connected to the light-receiving surface electrode.
摘要翻译：为了提供高效率的太阳能电池，可以缩短结分离部分的周长，提高绝缘电阻。在光接收表面电极通过穿过第一导电类型的半导体衬底的贯通电极与背面上的另一电极布线的类型的光电换能器中，光电变换器包括：接合分离部分在所述半导体基板的背面上的贯通电极; 形成用于覆盖结分离部分的电介质层，穿透电介质层的通孔; 以及背面电极，设置在电介质层上并与连接到受光面电极的通电极耦合。

3. 发明申请

US20100276772A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换装置及制造光电转换装置的方法
公开(公告)号：US20100276772A1
公开(公告)日：2010-11-04
申请号：US12810205
申请日：2008-11-27
申请人： Ryo Ozaki , Akiko Tsunemi , Tsutomu Yamazaki , Satoshi Okamoto
发明人： Ryo Ozaki , Akiko Tsunemi , Tsutomu Yamazaki , Satoshi Okamoto
IPC分类号： H01L27/14 , H01L31/18
CPC分类号： H01L31/035281 , H01L31/022433 , H01L31/02245 , Y02E10/50
摘要： Provided are a photoelectric conversion device (10) having a first conductivity type semiconductor (1), a first main surface (1a) of the first conductivity type semiconductor (1) being provided with a concave portion (26, 27) formed therein, the photoelectric conversion device (10) including: a second conductivity type semiconductor (3) formed in the first main surface (1a) of the first conductivity type semiconductor (1), an inner wall surface of a through-hole (19), and a second main surface (1a) of the first conductivity type semiconductor (1); a light-receiving surface electrode (5a, 5c) formed to fill the concave portion (26, 27) in the first main surface (1a) of the first conductivity type semiconductor (1); a first electrode (2) formed on the second main surface (1c) of the first conductivity type semiconductor (1); a through-hole electrode portion (9) formed inside the through-hole (19) to be in contact with the second conductivity type semiconductor (3) in the inner wall surface of the through-hole (19); and a second electrode (7) formed on the second conductivity type semiconductor (3) in the second main surface (1a) of the first conductivity type semiconductor (1) to be in contact with the through-hole electrode portion (9), the light-receiving surface electrode (5a, 5c) and the second electrode (7) being electrically connected by the through-hole electrode portion (9); and a method of manufacturing the photoelectric conversion device (10).
摘要翻译：提供了具有第一导电型半导体（1）的光电转换装置（10），第一导电型半导体（1）的第一主表面（1a）在其中形成有凹部（26,27），光电转换装置（10）包括：形成在第一导电类型半导体（1）的第一主表面（1a）中的第二导电类型半导体（3），通孔（19）的内壁表面，以及第一导电型半导体（1）的第二主表面（1a）; 形成为填充第一导电型半导体（1）的第一主表面（1a）中的凹部（26,27）的光接收表面电极（5a，5c）形成在第一导电型半导体（1）的第二主表面（1c）上的第一电极（2）; 在所述通孔（19）的内壁面内形成有与所述第二导电型半导体（3）接触的通孔电极部（9）。以及形成在与所述通孔电极部（9）接触的所述第一导电型半导体（1）的所述第二主面（1a）中的所述第二导电型半导体（3）上的第二电极（7）光接收表面电极（5a，5c）和第二电极（7）通过通孔电极部分（9）电连接; 以及制造光电转换装置（10）的方法。

4. 发明授权

US09130101B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US09130101B2
公开(公告)日：2015-09-08
申请号：US13699397
申请日：2011-05-13
申请人： Kenji Fujita , Yasushi Funakoshi , Hiroyuki Oka , Satoshi Okamoto
发明人： Kenji Fujita , Yasushi Funakoshi , Hiroyuki Oka , Satoshi Okamoto
IPC分类号： H01L21/22 , H01L31/068 , B24B27/06 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/0682 , B24B27/0633 , H01L31/022441 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A semiconductor device and a method for manufacturing the semiconductor device are provided. A semiconductor substrate has a surface on which an abrasion trace is formed, and a dopant diffusion region includes a portion extending in the direction at an angle within the range of −5° to +5° with respect to the direction in which the abrasion trace extends.
摘要翻译：提供半导体器件和制造半导体器件的方法。半导体基板具有形成磨损痕迹的表面，掺杂剂扩散区域包括相对于磨损痕迹的方向在-5°至+ 5°的范围内沿该方向延伸的部分延伸。

5. 发明申请

US20120325291A1 METHOD FOR PRODUCING BACK ELECTRODE TYPE, SOLAR CELL, BACK ELECTRODE TYPE SOLAR CELL AND BACK ELECTRODE TYPE SOLAR CELL MODULE 审中-公开
标题翻译：背电极型，太阳能电池，背电极型太阳能电池和背电极型太阳能电池模块的制造方法
公开(公告)号：US20120325291A1
公开(公告)日：2012-12-27
申请号：US13576247
申请日：2011-01-27
申请人： Yuji Yokosawa , Yasushi Funakoshi , Satoshi Okamoto , Takahisa Kurahashi
发明人： Yuji Yokosawa , Yasushi Funakoshi , Satoshi Okamoto , Takahisa Kurahashi
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/048
CPC分类号： H01L31/02168 , H01L31/0288 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for producing a back electrode type solar cell including the steps of forming a light-receiving surface diffusion layer and an anti-reflection film by applying, to a light-receiving surface of a silicon substrate, a solution containing a compound containing an impurity identical in conductivity type to the silicon substrate, a titanium alkoxide, and an alcohol, followed by heat treatment, and forming a light-receiving surface passivation film on the light-receiving surface of the silicon substrate by heat treatment; a back electrode type solar cell including a light-receiving surface diffusion layer, and an anti-reflection film on the light-receiving surface diffusion layer, made of titanium oxide containing an impurity identical in conductivity type to a silicon substrate; and a back electrode type solar cell module including the back electrode type solar cells.
摘要翻译：一种背电极型太阳能电池的制造方法，其特征在于，具有以下工序：在所述硅基板的受光面上涂布含有杂质的溶液的溶液，形成受光面扩散层和防反射膜导电类型与硅衬底，钛醇盐和醇相同，随后热处理，并且通过热处理在硅衬底的光接收表面上形成光接收表面钝化膜; 背光电极型太阳能电池，其包含受光面扩散层和在受光面扩散层上的防反射膜，所述防反射膜由含有与硅衬底导电类型相同的杂质的钛氧化物构成; 以及包括背面电极型太阳能电池的背面电极型太阳能电池模块。

6. 发明申请

US20120263882A1 RESIN-IMPREGNATED BASE SUBSTRATE AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：树脂印刷基板及其制造方法
公开(公告)号：US20120263882A1
公开(公告)日：2012-10-18
申请号：US13531815
申请日：2012-06-25
申请人： Satoshi Okamoto , Shiro Katagiri , Jongchul Seo
发明人： Satoshi Okamoto , Shiro Katagiri , Jongchul Seo
IPC分类号： B05D7/24 , B05D7/02 , B05D7/00 , C03C17/32
CPC分类号： B32B38/08 , B32B2311/12 , B32B2457/08 , C08J7/047 , C08J2467/00 , H05K1/0326 , H05K1/0366 , H05K2201/0141 , H05K2201/0278 , Y10T428/24994 , Y10T428/31786
摘要： A resin-impregnated base substrate is provided by immersing a sheet in an aromatic liquid crystal polyester solution composition so that the polyester is impregnated into the sheet, and removing the solvent. The composition comprises 20 to 50 parts by weight of an aromatic liquid crystal polyester and 100 parts by weight of an aprotic solvent having no halogen atom, wherein the sheet comprises fiber selected from the group consisting of polyolefin resin fiber, fluorocarbon resin fiber, aramid resin fiber, glass fiber, ceramic fiber and carbon fiber.
摘要翻译：通过将片浸渍在芳族液晶聚酯溶液组合物中以使聚酯浸渍到片中并除去溶剂来提供树脂浸渍的基底基材。该组合物包含20至50重量份的芳族液晶聚酯和100重量份的不含卤素原子的非质子溶剂，其中该片材包含选自聚烯烃树脂纤维，氟碳树脂纤维，芳族聚酰胺树脂纤维，玻璃纤维，陶瓷纤维和碳纤维。

7. 发明授权

US08076012B2 Magnetic thin film and method for forming the film, and magnetic thin film-applied device 有权
标题翻译：磁性薄膜和薄膜形成方法以及磁性薄膜施加装置
公开(公告)号：US08076012B2
公开(公告)日：2011-12-13
申请号：US12510878
申请日：2009-07-28
申请人： Takehito Shimatsu , Hideo Sato , Osamu Kitakami , Satoshi Okamoto , Hajime Aoi , Hiroyasu Kataoka
发明人： Takehito Shimatsu , Hideo Sato , Osamu Kitakami , Satoshi Okamoto , Hajime Aoi , Hiroyasu Kataoka
IPC分类号： G11B5/65
CPC分类号： G11B5/656 , B82Y25/00 , G11B5/65 , G11B5/82 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F41/18 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/115 , Y10T428/32
摘要： Disclosed are a magnetic thin film capable of providing a high uniaxial magnetic anisotropy, Ku, while suppressing the saturation magnetization Ms thereof, and a method for forming the film; and also disclosed are various devices to which the magnetic thin film is applied. The magnetic thin film comprises a Co-M-Pt alloy having an L11-type ordered structure (wherein M represents one or more metal elements except Co and Pt). For example, the Co-M-Pt alloy is a Co—Ni—Pt alloy of which the composition comprises from 10 to 35 at. % of Co, from 20 to 55 at. % of Ni and a balance of Pt. The magnetic thin film is applicable to perpendicular magnetic recording media, tunnel magneto-resistance (TMR) devices, magnetoresistive random access memories (MRAM), microelectromechanical system (MEMS) devices, etc.
摘要翻译：公开了能够提供高的单轴磁各向异性Ku的磁性薄膜，同时抑制其饱和磁化强度Ms，以及形成膜的方法; 并且还公开了施加磁性薄膜的各种装置。磁性薄膜包括具有L11型有序结构的Co-M-Pt合金（其中M表示除了Co和Pt之外的一种或多种金属元素）。例如，Co-M-Pt合金是Co-Ni-Pt合金，其组成包含10至35at。 Co的百分比，从20到55。 Ni的百分比和Pt的余量。磁性薄膜适用于垂直磁记录介质，隧道磁阻（TMR）器件，磁阻随机存取存储器（MRAM），微机电系统（MEMS）器件等。

8. 发明申请

US20110057283A1 PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT ASSEMBLY AND PHOTOELECTRIC CONVERSION MODULE 有权
标题翻译：光电转换元件，光电转换元件组件和光电转换模块
公开(公告)号：US20110057283A1
公开(公告)日：2011-03-10
申请号：US12674967
申请日：2008-07-25
申请人： Akiko Tsunemi , Satoshi Okamoto
发明人： Akiko Tsunemi , Satoshi Okamoto
IPC分类号： H01L31/042 , H01L31/04
CPC分类号： H01L31/022425 , H01L31/02245 , H01L31/068 , Y02E10/547
摘要： To provide a photoelectric conversion element that allows connection between adjacent photoelectric conversion elements by use of an inexpensive wiring member.A photoelectric conversion element of the present invention comprises: a first semiconductor layer of a first conductivity type; a first electrode arranged on the back side of the first semiconductor layer and electrically connected to the first semiconductor layer; a second semiconductor layer of a second conductivity type, the second semiconductor layer brought into contact with the first semiconductor layer and arranged at least in part on the light-receiving side of the first semiconductor layer; a light-receiving face-side electrode provided so as to be electrically connected to the second semiconductor layer on its light-receiving side; a second electrode arranged on the back side of the first semiconductor layer, and electrically separated from the first semiconductor layer, but electrically connected to the second semiconductor layer; and a penetrating-connecting section penetrating the first semiconductor layer, and electrically separated from the first semiconductor layer, but electrically connecting the light-receiving face-side electrode with the second electrode, wherein the photoelectric conversion element is characterized in that the first electrode and the second electrode are arranged equidistantly apart from a central axis passing through a center of the photoelectric conversion element.
摘要翻译：提供一种光电转换元件，其允许通过廉价的布线构件连接相邻的光电转换元件。本发明的光电转换元件包括：第一导电类型的第一半导体层; 布置在所述第一半导体层的背侧并电连接到所述第一半导体层的第一电极; 第二导电类型的第二半导体层，第二半导体层与第一半导体层接触并且至少部分地布置在第一半导体层的光接收侧上; 光接收面侧电极，被设置为与其受光侧的第二半导体层电连接; 布置在所述第一半导体层的背面上并与所述第一半导体层电分离但电连接到所述第二半导体层的第二电极; 以及穿透所述第一半导体层的穿透连接部，与所述第一半导体层电分离，但是将所述受光面侧电极与所述第二电极电连接，所述光电转换元件的特征在于，所述第一电极和第二电极与通过光电转换元件的中心的中心轴线等距离设置。

9. 发明申请

US20090266714A1 Method for Forming Multi-Layer Coating Film 审中-公开
标题翻译：多层涂膜的形成方法
公开(公告)号：US20090266714A1
公开(公告)日：2009-10-29
申请号：US11887587
申请日：2006-04-07
申请人： Toshio Kaneko , Satoshi Okamoto , Masanobu Futsuhara , Makoto Doi , Eisaku Okada , Takehiro Nito
发明人： Toshio Kaneko , Satoshi Okamoto , Masanobu Futsuhara , Makoto Doi , Eisaku Okada , Takehiro Nito
IPC分类号： C09D5/44 , C25D9/12
CPC分类号： C25D13/22 , C09D5/4492
摘要： The present invention is to provide a method for forming a multi-layer coating film, which can combine a pre-treating step conducted for a metal substrate, before electrodeposition coating, and an electrodeposition coating step. The method comprises: a step of dipping a material to be coated in an aqueous coating composition comprising (A) a rare earth metal compound, (B) a base resin having a cationic group, and (C) a curing agent, wherein a content of the rare earth metal compound (A) in the aqueous coating composition is limited to specific range; a pre-treating step of applying a voltage of less than 50 V in the aqueous coating composition, wherein the material to be coated is used as a cathode; and an electrodeposition coating of applying a voltage of 50 to 450 V in the aqueous coating composition, wherein the material to be coated is used as a cathode.
摘要翻译：本发明提供一种形成多层涂膜的方法，其可以在电沉积涂覆之前组合对金属基材进行的预处理步骤和电沉积涂布步骤。该方法包括：将待涂覆的材料浸渍在包含（A）稀土金属化合物，（B）具有阳离子基团的基础树脂和（C）固化剂）的水性涂料组合物中，其中含量的水性涂料组合物中的稀土金属化合物（A）被限制在特定范围内; 在水性涂料组合物中施加小于50V的电压的预处理步骤，其中待涂覆的材料用作阴极; 以及在水性涂料组合物中施加50-450V的电压的电沉积涂层，其中待涂覆的材料用作阴极。

10. 发明授权

US07550093B2 Liquid-crystalline polyester and solution composition comprising the same 有权
标题翻译：液晶聚酯和包含其的溶液组合物
公开(公告)号：US07550093B2
公开(公告)日：2009-06-23
申请号：US11652510
申请日：2007-01-12
申请人： Jongchul Seo , Satoshi Okamoto , Seung-Shin Lee
发明人： Jongchul Seo , Satoshi Okamoto , Seung-Shin Lee
IPC分类号： C09K19/00 , C09K19/06 , C09K19/52
CPC分类号： C09K19/3809 , C08J5/18 , C08J2377/12 , H05K1/0326 , H05K1/0393 , H05K2201/0141 , H05K2201/0145 , Y10T428/10 , Y10T428/24917
摘要： A liquid-crystalline polyester for film having small linear expansibility and high flexibility is provided. The polyester may have structural units —O—Ar1-CO—, —NH—Ar2-X—, —CO—Ar3-CO— and —CO—Ar4-Z-Ar5-CO— wherein Ar1 represents 1,4-phenylene, 2,6-naphthylene or 4,4′-biphenylene, Ar2 represents 1,4-phenylene or 1,3-phenylene, X represents —O— or —NH—, Ar3 represents 1,4-phenylene, 1,3-phenylene or 2,6-naphthylene, Ar4 and Ar5 independently represent 1,4-phenylene, 2,6-naphthylene or 4,4′-biphenylene, and Z represents —O—, —SO2— or —CO—, in which the amount of monomer (1) is 30-80% by mol, the amount of monomer (2) is 10-35% by mol, the total amount of monomers (3) and (4) is 10-35% by mol and the amount of monomer (4) is 1% by mol or larger.
摘要翻译：提供了具有小线性膨胀性和高柔性的薄膜用液晶聚酯。聚酯可以具有结构单元-O-Ar1-CO-，-NH-Ar2-X-，-CO-Ar3-CO-和-CO-Ar4-Z-Ar5-CO-，其中Ar1表示1,4-亚苯基， 2,6-亚萘基或4,4'-亚联苯基，Ar 2表示1,4-亚苯基或1,3-亚苯基，X表示-O-或-NH-，Ar 3表示1,4-亚苯基，1,3-亚苯基或2,6-亚萘基，Ar4和Ar5独立地表示1,4-亚苯基，2,6-亚萘基或4,4'-亚联苯基，Z表示-O - ， - SO2-或-CO-，其中的量单体（1）的含量为30〜80摩尔％，单体（2）的含量为10-35摩尔％，单体（3）和（4）的总量为10-35摩尔％的单体（4）为1摩尔％以上。

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