会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • HEAT SPREADER FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • 用于半导体器件的热交换器及其制造方法
    • US20100206537A1
    • 2010-08-19
    • US12599635
    • 2008-05-20
    • Toshiya IkedaShigeki KoyamaShinya Nishida
    • Toshiya IkedaShigeki KoyamaShinya Nishida
    • F28F7/00B23P15/26
    • H01L23/3735H01L23/3677H01L23/473H01L2224/32225H01L2924/1305H01L2924/13055H01L2924/3011Y10T29/49393H01L2924/00
    • Provided are a heat spreader for a semiconductor device, which can be joined such that a multitude of pin-shaped fins are not easily fractured even when the heat spreader for a semiconductor device is incorporated in a heat dissipation structure for a semiconductor device, in which direct cooling is performed by using water, and a method for manufacturing the heat spreader for a semiconductor device. The heat spreader (1) for a semiconductor device comprises: a plurality of columnar members (13) joined onto at least one of surfaces of a plate-like member (11, 12) by stud welding; and a joining layer (14) formed between the plate-like member (11, 12) and the columnar members (13). The plate-like member (11, 12) includes a base material (11) and surface layers (12). The surface layers (12) and the columnar members (13) are made of a material containing aluminum or an aluminum alloy. A thickness of the plate-like member (11, 12) is 0.5 mm through 6 mm and a thickness of each of the surface layers (12) is 0.1 mm through 1 mm. The joining layer (14) has a joining interface (15) on a boundary with the plate-like member (11, 12). A proportion of an area of the joining interface (15) being present in the surface layer (12) is greater than or equal to 50% and less than or equal to 100%, converted in terms of a plane projected to the one of the surfaces of the plate-like member.
    • 提供一种用于半导体器件的散热器,其可以被接合,使得即使当用于半导体器件的散热结构中并入半导体器件的散热结构时,多个销状翅片也不容易断裂,其中 通过使用水进行直接冷却,以及制造半导体装置的散热器的方法。 用于半导体器件的散热器(1)包括:多个柱状构件(13),通过螺柱焊接在板状构件(11,12)的至少一个表面上; 以及形成在所述板状构件(11,12)和所述柱状构件(13)之间的接合层(14)。 板状构件(11,12)包括基材(11)和表层(12)。 表面层(12)和柱状构件(13)由含有铝或铝合金的材料制成。 板状部件(11,12)的厚度为0.5mm〜6mm,各表面层(12)的厚度为0.1mm〜1mm。 接合层(14)在与板状构件(11,12)的边界上具有接合界面(15)。 存在于表面层(12)中的接合界面(15)的面积的一部分大于或等于50%且小于或等于100%,根据投影到所述表面层 板状构件的表面。
    • 6. 发明授权
    • Casting nozzle
    • 铸造喷嘴
    • US08863999B2
    • 2014-10-21
    • US11886660
    • 2006-02-20
    • Masatada NumanoYoshihiro NakaiToshiya IkedaMitsuyuki Kobayashi
    • Masatada NumanoYoshihiro NakaiToshiya IkedaMitsuyuki Kobayashi
    • B22D41/50B22D11/06B22D11/00B22D41/54
    • B22D11/001B22D11/0642B22D11/0645B22D41/54
    • A casting nozzle suited to manufacture a casting material of pure magnesium or magnesium alloy is provided. A nozzle 1 is utilized to manufacture a casting material 100 by supplying molten metal to a portion between rolls 10 which become a casting die, and arranged so that a pouring port 4 is located between a pair of rolls 10 opposed to other. This nozzle 1 includes a main body 1a formed of oxide material such as alumina, and a coating layer 3 which is provided on the inner surface of the main body 1a which comes into contact the molten metal, and formed of material that does not include oxygen substantially. Since the main body 1a does not come into direct contact with the molten metal due to the coating layer 3, it is possible to prevent oxygen included in the main body 1a from reacting with the molten metal. Further, in the nozzle 1, a casting die contact portion 2 which comes into contact with the rollers 10 is formed of thermal insulation material, whereby it is prevented that the molten metal in the nozzle 1 is cooled through the casting die contact portion 2 by the rollers 10.
    • 提供了适用于制造纯镁或镁合金铸造材料的铸造喷嘴。 喷嘴1用于通过将熔融金属供给到成为铸模的辊10之间的部分来制造铸造材料100,并且布置成使得倾倒口4位于与另一个相对的一对辊10之间。 该喷嘴1包括由诸如氧化铝的氧化物材料形成的主体1a和设置在主体1a的与金属熔融接触的内表面上并由不含氧的材料形成的涂层3 实质上 由于主体1a由于涂层3而不与熔融金属直接接触,所以可以防止主体1a中包含的氧与熔融金属反应。 此外,在喷嘴1中,与辊10接触的铸模接触部2由绝热材料形成,由此防止喷嘴1中的熔融金属通过铸模接触部2被冷却 滚轮10。