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1. 发明授权

US06395588B2 Compound semiconductor device and method of manufacturing the same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US06395588B2
公开(公告)日：2002-05-28
申请号：US09880867
申请日：2001-06-15
申请人： Tsutomu Igarashi , Kenji Arimochi , Teruo Yokoyama , Eizo Mitani , Shigeru Kuroda , Junichiro Nikaido , Yasunori Tateno
发明人： Tsutomu Igarashi , Kenji Arimochi , Teruo Yokoyama , Eizo Mitani , Shigeru Kuroda , Junichiro Nikaido , Yasunori Tateno
IPC分类号： H01L21338
CPC分类号： H01L29/7783 , H01L29/1029
摘要： The impurity concentration contained in a layer on an electron supply layer of a high electron mobility field effect transistor is set in the range of 1˜1016 to 1˜1017 atoms/cm3, or the bandgap of a Schottky layer is set wider than that of the electron supply layer. Otherwise, in the steps of manufacturing the high electron mobility field effect transistor, after a silicon nitride film has been formed on a GaAs buried layer in which a second recess is formed and in a region on the inside of a first recess formed in a GaAs contact layer, the GaAs buried layer is still heated.
摘要翻译：包含在高电子迁移率场效应晶体管的电子供给层上的层中的杂质浓度设定在1〜1016〜1〜1017原子/ cm3的范围内，或者将肖特基层的带隙设定为宽于电子供应层。否则，在制造高电子迁移率场效应晶体管的步骤中，在形成有第二凹部的GaAs掩埋层上形成氮化硅膜之后，在形成于GaAs的第一凹部的内部的区域接触层，GaAs掩埋层仍然加热。

2. 发明授权

US06274893B1 Compound semiconductor device and method of manufacturing the same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US06274893B1
公开(公告)日：2001-08-14
申请号：US09330085
申请日：1999-06-11
申请人： Tsutomu Igarashi , Kenji Arimochi , Teruo Yokoyama , Eizo Mitani , Shigeru Kuroda , Junichiro Nikaido , Yasunori Tateno
发明人： Tsutomu Igarashi , Kenji Arimochi , Teruo Yokoyama , Eizo Mitani , Shigeru Kuroda , Junichiro Nikaido , Yasunori Tateno
IPC分类号： H01L31072
CPC分类号： H01L29/7783 , H01L29/1029
摘要： The impurity concentration contained in a layer on an electron supply layer of a high electron mobility field effect transistor is set in the range of 1×1016 to 1×1017 atoms/cm3, or the bandgap of a Schottky layer is set wider than that of the electron supply layer.
摘要翻译：包含在高电子迁移率场效应晶体管的电子供给层上的层中的杂质浓度设定在1×1016至1×1017原子/ cm3的范围内，或者将肖特基层的带隙设置为比电子供给层的带隙宽。

3. 发明授权

US5949095A Enhancement type MESFET 失效
标题翻译：增强型MESFET
公开(公告)号：US5949095A
公开(公告)日：1999-09-07
申请号：US689661
申请日：1996-08-13
申请人： Masaki Nagahara , Yasunori Tateno , Masahiko Takikawa
发明人： Masaki Nagahara , Yasunori Tateno , Masahiko Takikawa
IPC分类号： H01L29/812 , H01L21/203 , H01L21/335 , H01L21/338 , H01L29/47 , H01L29/80
CPC分类号： H01L29/66462 , H01L29/475 , H01L29/802
摘要： A carrier transfer layer of compound semiconductor material is disposed on or over a support substrate, and a gate electrode of conductive material is disposed on or over the carrier transfer layer at a partial region thereof. A cap layer of non-doped compound semiconductor material is disposed on or over the carrier transfer layer at both sides of the gate electrode. The thickness of the cap layer is 100 nm or thicker. two current electrodes are formed in ohmic contact with the carrier transfer layer. An enhancement mode MESFET is provided whose gain and output power are suppressed from being lowered.
摘要翻译：化合物半导体材料的载流子转移层设置在支撑基板上或上方，导电材料的栅电极设置在载流子转移层上或其上的部分区域上。无掺杂化合物半导体材料的覆盖层设置在栅电极两侧的载流子转移层的上方或上方。盖层的厚度为100nm或更厚。两个电流电极与载流子转移层欧姆接触形成。提供增益模式MESFET，其增益和输出功率被抑制而不降低。

4. 发明授权

US06242766B1 High electron mobility transistor 失效
标题翻译：高电子迁移率晶体管
公开(公告)号：US06242766B1
公开(公告)日：2001-06-05
申请号：US09443210
申请日：1999-11-18
申请人： Yasunori Tateno
发明人： Yasunori Tateno
IPC分类号： H01L310328
CPC分类号： H01L29/7783 , H01L29/155
摘要： A high electron mobility transistor including an n-type semiconductor layer having a mixed crystal of aluminum gallium arsenide with an aluminum mixed ratio set to fall in the range of 0.2˜0.3, and an undoped semiconductor layer forming a superlattice structure of an electron supplying layer, the undoped semiconductor layer having a mixed crystal of aluminum gallium arsenide with an aluminum mixed ratio set to fall in the proximity of a critical mixed crystal ratio between direct transition and indirect transition.
摘要翻译：一种高电子迁移率晶体管，包括具有设定为0.2〜0.3的铝混合比的混合铝砷化镓的混晶的n型半导体层和形成电子供给层的超晶格结构的未掺杂半导体层将具有铝混合比的铝砷化镓的混合晶体的未掺杂半导体层设定为接近直接跃迁和间接转变之间的临界混晶比。

5. 发明授权

US5159297A Switching circuit having constant impedance regardless switching operation thereof 失效
标题翻译：具有恒定阻抗的开关电路，无论其切换操作如何
公开(公告)号：US5159297A
公开(公告)日：1992-10-27
申请号：US707826
申请日：1991-05-30
申请人： Yasunori Tateno
发明人： Yasunori Tateno
IPC分类号： H01P1/15 , H03K17/687
CPC分类号： H01P1/15
摘要： A switching circuit comprises a transmission line having a specific impedance value and connected to an input terminal, a first switching portion including a plurality of first transistors connected in parallel between the transmission line and the ground, and a second switching portion including a second transistor and a resistor connected in parallel between the transmission line and an output terminal. The first transistors of the first switching portion and the second transistor of the second switching portion are complementally switched. Consequently, the switching circuit can be enabled to impedance-match with an objective circuit (for example, a measurement apparatus, a transceiver, a phased array system, and the like), and loss of signal transfer can be decreased regardless of the switching ON or OFF states of the switching circuit.
摘要翻译：开关电路包括具有特定阻抗值并连接到输入端的传输线，包括并联连接在传输线与地之间的多个第一晶体管的第一开关部分和包括第二晶体管和第二晶体管的第二开关部分，在传输线和输出端之间并联连接的电阻器。互补地切换第一开关部分的第一晶体管和第二开关部分的第二晶体管。因此，开关电路能够与目标电路（例如，测量装置，收发器，相控阵系统等）进行阻抗匹配，并且可以减少信号传输的损失而不管开关导通或关断状态。

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