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1. 发明授权

US4992636A Sealed container for microwave oven cooking 失效
标题翻译：用于微波炉烹饪的密封容器
公开(公告)号：US4992636A
公开(公告)日：1991-02-12
申请号：US368383
申请日：1989-06-05
申请人： Tsunehisa Namiki , Ikuo Sugiyama , Tamio Fujiwara , Kazuhisa Ishibashi , Isao Tanikawa , Muneki Yamada , Kyuichi Shibasaki
发明人： Tsunehisa Namiki , Ikuo Sugiyama , Tamio Fujiwara , Kazuhisa Ishibashi , Isao Tanikawa , Muneki Yamada , Kyuichi Shibasaki
IPC分类号： B29C65/74 , B65D77/20 , B65D81/34
CPC分类号： B65D81/3453 , B65D2581/344 , B65D2581/3445 , B65D2581/3477 , B65D2581/3479 , B65D2581/3483 , B65D2581/3494 , Y10S99/14
摘要： A container body is sealed by means of a lid made of a flexible sheet having an insulative property and an antenna made of an electrically conductive material which is laminated upon the lid. According to this construction, when the container body is exposed to microwaves within a microwave oven, microwave energy is concentrated at a position near the front end of the antenna and the microwave energy is converted into heat energy, whereby the lid is opened by means of the thus converted heat. The lid can thus be precisely partially melted so as to form an opening of a predeterminedly suitable size.

2. 发明申请

US20090250444A1 Microwave plasma processing device 有权
标题翻译：微波等离子体处理装置
公开(公告)号：US20090250444A1
公开(公告)日：2009-10-08
申请号：US12457497
申请日：2009-06-12
申请人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima , Tsunehisa Namiki , Takeshi Aihara , Yasunori Onozawa
发明人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima , Tsunehisa Namiki , Takeshi Aihara , Yasunori Onozawa
IPC分类号： B23K9/02
CPC分类号： H01J37/3244 , C23C16/045 , C23C16/45568 , C23C16/45578 , C23C16/511 , H01J37/32192 , H05H1/46 , H05H2001/463
摘要： A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.
摘要翻译：微波等离子体处理装置包括：固定装置，用于将作为加工对象的基板固定在等离子体处理室的中心轴上;排气装置，用于对基板的内部和外部进行减压;金属加工气体供应部件，基板并与等离子体处理室一起形成可折入的圆柱形谐振系统，以及微波引入装置，用于将微波引入等离子体处理室以进行处理。微波密封件设置在定影装置的基板保持部分处，并且微波引入装置的连接位置位于通过引入微波而形成在处理气体供给构件上的电场强度分布的节点处。

3. 发明授权

US06254983B1 Process for forming silicon oxide coating on plastic material 失效
标题翻译：在塑料材料上形成氧化硅涂层的工艺
公开(公告)号：US06254983B1
公开(公告)日：2001-07-03
申请号：US08575618
申请日：1995-12-20
申请人： Tsunehisa Namiki
发明人： Tsunehisa Namiki
IPC分类号： B32B1312
CPC分类号： C23C16/402 , C23C14/046 , C23C16/045 , Y10T428/1352 , Y10T428/24967 , Y10T428/24975 , Y10T428/265 , Y10T428/31507 , Y10T428/31667
摘要： This invention is to provide a three-dimensional plastic vessel of excellent gas-impermeability and a process for forming a film having uniform thickness and high gas-interception to a three-dimensional plastic vessel to produce the vessel. A plastic three-dimensional vessel, having a Tg higher than the coating temperature, excellent in gas-interception, that is coated with a silicon oxide film having a refractive index of 1.4 to 1.5, a thickness of 300 Å to 2000 Å and composition of SiOx (x=1.5 to 2.0) is provided. The process includes coating a silicon oxide film, excellent in gas-impermeability, on the plastic vessel of three-dimensional shape, said plastic being a material that has a Tg higher than the coating temperature of the silicon oxide thin film. A high-frequency electrode is placed on the surface side on which the coating is not formed and the location of the high-frequency electrode is nearly constant in a distance not more than 10 mm from the electrode surface to the vessel surface on which the coating is formed. An electrode for ground connection is placed in the surface side on which the coating is formed and the location of the ground connection electrode is nearly constant in a distance from the electrode surface to the vessel surface, which distance is greater than the distance from the high-frequency electrode surface to the vessel surface on which the coating is formed. The silicon oxide film is coated in a uniform thickness to the surface which faces to the ground connection electrode by introducing the plasma of the silicon oxide produced by CVD process in between the vessel and the ground connection electrode with a discharge has pressure of 0.0005 to 0.05 torr.
摘要翻译：本发明提供一种具有优异的气体不透性的三维塑料容器，以及一种用于形成具有均匀厚度和高气体拦截的膜的方法，用于制造三维塑料容器。具有高于涂布温度的Tg的塑料三维容器，气体截留性优异，涂覆有折射率为1.4至1.5的氧化硅膜，厚度为300埃至2000埃，组成为提供SiOx（x = 1.5〜2.0）。该方法包括在三维形状的塑料容器上涂覆气体不透性优异的氧化硅膜，所述塑料是Tg高于氧化硅薄膜的涂层温度的材料。将高频电极放置在没有形成涂层的表面侧，并且高频电极的位置距电极表面至其上的涂层的容器表面不超过10mm的距离几乎恒定形成了。用于接地的电极放置在其上形成涂层的表面侧，并且接地连接电极的位置距离电极表面至容器表面的距离几乎恒定，该距离大于距离高度的距离电极表面形成在其上形成涂层的容器表面上。氧化硅膜通过将通过CVD工艺产生的氧化硅的等离子体引入到介电层之间，以均匀的厚度涂覆到与接地连接电极相对的表面上容器和具有放电的接地连接电极的压力为0.0005至0.05托。

4. 发明授权

US07488683B2 Chemical vapor deposited film based on a plasma CVD method and method of forming the film 有权
标题翻译：基于等离子体CVD法的化学气相沉积膜和形成膜的方法
公开(公告)号：US07488683B2
公开(公告)日：2009-02-10
申请号：US10550897
申请日：2004-03-23
申请人： Akira Kobayashi , Tsunehisa Namiki , Hiroko Hosono , Hideo Kurashima , Hajime Inagaki , Toshihide Ieki
发明人： Akira Kobayashi , Tsunehisa Namiki , Hiroko Hosono , Hideo Kurashima , Hajime Inagaki , Toshihide Ieki
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/045 , B05D1/62 , B05D2201/00 , B05D2490/50 , C23C16/0272 , C23C16/401 , C23C16/45523
摘要： A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.
摘要翻译：在等离子体处理室中保持待处理基板，在基板表面形成氧化硅蒸镀膜的方法，通过将有机硅化合物和氧化气体进料进入化学等离子体进行处理处理室，其中在形成气相沉积膜期间，使氧化气体的供给速率变化，同时保持将有机硅化合物气体进料到等离子体处理室中的速率恒定。形成了具有优异的粘合性，柔软性，柔韧性，阻氧性和防水性的化学气相沉积膜。

5. 发明授权

US06818310B2 Silicon oxide film 有权
标题翻译：氧化硅膜
公开(公告)号：US06818310B2
公开(公告)日：2004-11-16
申请号：US10332135
申请日：2003-01-06
申请人： Tsunehisa Namiki , Toshihide Ieki , Hideo Kurashima , Hajime Inagaki , Akira Kobayashi , Koji Yamada , Miwako Tanikawa
发明人： Tsunehisa Namiki , Toshihide Ieki , Hideo Kurashima , Hajime Inagaki , Akira Kobayashi , Koji Yamada , Miwako Tanikawa
IPC分类号： B32B2728
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/401 , C23C16/402 , Y10T428/265 , Y10T428/31667
摘要： A silicon oxide film is formed on the surfaces of a plastic substrate and contains methyl groups and methylene groups in a portion near the interface to the plastic substrate. The silicon oxide film exhibits not only excellent adhesion to the plastic substrate, softness and flexibility but also exhibits excellent gas shut-off property (gas barrier property), makes it possible to achieve excellent gas-shutoff property with a smaller film thickness than that of the conventional films, and can be mass-produced favorably.
摘要翻译：在塑料基板的表面上形成氧化硅膜，并且在与塑料基板的界面附近的部分含有甲基和亚甲基。氧化硅膜不仅具有对塑料基材的优异的粘附性，柔软性和柔软性，而且还表现出优异的气体截断性（阻气性），可以实现比膜厚小的膜厚度优异的气体截止性能常规的膜，并且可以有利地批量生产。

6. 发明授权

US5641559A Gas-tight laminated plastic film containing polymer of organosilicic compound 失效
标题翻译：含有机硅化合物聚合物的气密层压塑料膜
公开(公告)号：US5641559A
公开(公告)日：1997-06-24
申请号：US500679
申请日：1995-07-11
申请人： Tsunehisa Namiki
发明人： Tsunehisa Namiki
IPC分类号： B05D7/24 , B65D1/02 , C08J7/04 , C23C14/04 , C23C14/10 , C23C16/04 , C23C16/30 , B32B7/02 , B32B27/32 , B32B27/36
CPC分类号： C23C14/046 , B05D1/62 , B65D1/0215 , C08J7/045 , C23C14/10 , C23C16/30 , B05D2201/00 , Y10T428/24967 , Y10T428/24975 , Y10T428/265 , Y10T428/31667 , Y10T428/31786
摘要： A first layer made of a polymer of organosilicic compound containing at least silicon, oxygen and carbon is formed over a plastic substrate, and a second layer made of silicon oxide is then formed over the first layer, and the first and second layers in combination exhibit excellent gas-tight characteristics.
摘要翻译：在塑料基板上形成由至少含有硅，氧和碳的有机硅化合物的聚合物制成的第一层，然后在第一层上形成由氧化硅制成的第二层，并且组合的第一和第二层优良的气密特性。

7. 发明授权

US07847209B2 Method of forming a metal oxide film and microwave power source device used for the above method 有权
标题翻译：形成金属氧化物膜的方法和用于上述方法的微波电源装置
公开(公告)号：US07847209B2
公开(公告)日：2010-12-07
申请号：US10530357
申请日：2003-10-09
申请人： Tsunehisa Namiki , Toshihide Ieki , Hideo Kurashima , Hajime Inagaki , Akira Kobayashi , Koji Yamada
发明人： Tsunehisa Namiki , Toshihide Ieki , Hideo Kurashima , Hajime Inagaki , Akira Kobayashi , Koji Yamada
IPC分类号： B23K9/00 , B23K9/02 , B23B9/04
CPC分类号： C23C16/515 , C23C16/0272 , C23C16/045 , C23C16/40 , C23C16/511 , H01J37/32192 , H01J37/32201 , H01J37/32311
摘要： A method of forming a metal oxide film by the plasma CVD method and which includes reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface of a plastic substrate via an organic layer. This method forms a thin film having excellent adhesiveness, softness and flexibility on the surface of a plastic substrate relying on the plasma CVD method.
摘要翻译：通过等离子体CVD法形成金属氧化物膜的方法，其特征在于，在低输出区域中通过辉光放电主要使有机金属反应，然后通过高输出区域的辉光放电使有机金属与氧化性气体反应通过有机层在塑料基板的表面上形成金属氧化物膜。该方法根据等离子体CVD法在塑料基板的表面上形成具有优异的粘合性，柔软性和柔软性的薄膜。

8. 发明授权

US07582845B2 Microwave plasma processing device and plasma processing gas supply member 有权
标题翻译：微波等离子体处理装置和等离子体处理气体供应部件
公开(公告)号：US07582845B2
公开(公告)日：2009-09-01
申请号：US10546283
申请日：2004-03-11
申请人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima , Tsunehisa Namiki , Takeshi Aihara , Yasunori Onozawa
发明人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima , Tsunehisa Namiki , Takeshi Aihara , Yasunori Onozawa
IPC分类号： B23K10/00
CPC分类号： H01J37/3244 , C23C16/045 , C23C16/45568 , C23C16/45578 , C23C16/511 , H01J37/32192 , H05H1/46 , H05H2001/463
摘要： A microwave plasma processing device can form a uniform thin film on a substrate to be processed. The microwave plasma processing device includes a fixing device for fixing a substrate to be processed onto the center axis in a plasma processing chamber, an exhaust device for depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to process it. A microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing device, and the connection position of the microwave introducing device is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.
摘要翻译：微波等离子体处理装置能够在待处理的基板上形成均匀的薄膜。微波等离子体处理装置包括用于将待处理基板固定在等离子体处理室中的中心轴上的定影装置，用于对基板内部和外部进行减压的排气装置，存在于基板中的金属加工气体供给部件和与等离子体处理室一起形成可折入的圆柱形谐振系统，以及用于将微波引入等离子体处理室以进行处理的微波引入装置。在定影装置的基板保持部的特定位置设置有微波密封构件，并且微波导入装置的连接位置被设定在从内部形成的场强分布的规定的弱场位置等离子体处理室。

9. 发明申请

US20070000879A1 Microwave plasma processing method 有权
公开(公告)号：US20070000879A1
公开(公告)日：2007-01-04
申请号：US10550509
申请日：2004-04-12
申请人： Hideo Kurashima , Akira Kobayashi , Kouji Yamada , Tsunehisa Namiki
发明人： Hideo Kurashima , Akira Kobayashi , Kouji Yamada , Tsunehisa Namiki
IPC分类号： B23K9/02
CPC分类号： H01J37/32284 , C23C16/045 , C23C16/511 , H01J37/32192 , H05B6/80
摘要： A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processing chamber 1, and a processing gas is transformed into plasma to form a thin film layer on a base substance 13 disposed in the plasma processing chamber 13, and the method comprises: fixing the base substance 13 coaxially with a central axis of the plasma processing chamber 1; setting a standing wave mode of the microwaves in the plasma processing chamber to a TE mode or a TEM mode from a mouth portion 131 to a body portion 133 of the base substance; and setting a mode having both the TE mode and a TM mode in a bottom portion 132 of the base substance.

10. 发明授权

US06475622B2 Process for forming silicon oxide coating on plastic material 失效
公开(公告)号：US06475622B2
公开(公告)日：2002-11-05
申请号：US09880135
申请日：2001-06-14
申请人： Tsunehisa Namiki
发明人： Tsunehisa Namiki
IPC分类号： B32B2736
CPC分类号： C23C16/402 , C23C14/046 , C23C16/045 , Y10T428/1352 , Y10T428/24967 , Y10T428/24975 , Y10T428/265 , Y10T428/31507 , Y10T428/31667
摘要： A gas-impermeable plastic vessel and a process for forming a film having uniform thickness and high gas-interception to a plastic vessel is disclosed. The plastic vessel, having a Tg higher than the coating temperature, excellent in gas-interception, is coated with a silicon oxide film having a refractive index of 1.4 to 1.5, a thickness of 300 Å to 2000 Å and composition of SiOx (X=1.5 to 2.0). A high-frequency electrode is placed on the non-coated surface side a constant distance of not more than 10 mm from the electrode surface to the vessel surface. A ground electrode connection is placed in the coated surface side and the ground connection electrode is maintained a constant distance from the electrode surface to the vessel surface, which distance is greater than the distance from the high-frequency electrode surface to the vessel surface on which the coating is formed. A silicon oxide film having a uniform thickness is coated onto the surface which faces to the ground connection electrode by introducing plasma of the silicon oxide produced by CVD process in between the vessel and the ground connection electrode with a discharge having a pressure of 0.0005 to 0.05 torr.

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