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1. 发明授权

US4615769A Process for distillation of styrenes 失效
标题翻译：蒸馏苯乙烯的方法
公开(公告)号：US4615769A
公开(公告)日：1986-10-07
申请号：US727059
申请日：1985-04-25
申请人： Tsukumo Horigome , Noriyuki Kawabe , Mamoru Takiue , Kunihiko Imai , Noriaki Uchiyama , Fusayuki Tsuzuki , Kenji Shimada , Masahiro Shibuya , Norimasa Hakutoh , Chiaki Watanabe , Junichi Abe
发明人： Tsukumo Horigome , Noriyuki Kawabe , Mamoru Takiue , Kunihiko Imai , Noriaki Uchiyama , Fusayuki Tsuzuki , Kenji Shimada , Masahiro Shibuya , Norimasa Hakutoh , Chiaki Watanabe , Junichi Abe
IPC分类号： C07C7/04 , B01D3/42
CPC分类号： C07C7/04 , Y02P20/123 , Y02P20/124 , Y10S203/07 , Y10S203/09
摘要： The present invention provides a process for distillation of styrenes which can be stably operated without loss of energy saving effect, by leading a part or all of low boiling point component vapor from the top to a compressor to use as a heat source for a reboiler and returning the low boiling point components condensed in the reboiler or a mixture of the condensate and a part of the uncondensed vapor to a recycling line of a distillation column.
摘要翻译：本发明提供一种蒸馏苯乙烯的方法，其可以通过将部分或全部低沸点组分蒸汽从顶部引导至压缩机以用作再沸器的热源，而不损失节能效果，而不会损失节能效果，将在再沸器中冷凝的低沸点组分或冷凝物与一部分未冷凝蒸汽的混合物返回到蒸馏塔的回收管线。

2. 发明授权

US08211345B2 Optical film, process for producing the same, and polarization plate utilizing the film 有权
标题翻译：光学膜，其制造方法以及利用该膜的偏光板
公开(公告)号：US08211345B2
公开(公告)日：2012-07-03
申请号：US12438018
申请日：2007-07-12
申请人： Masahiro Shibuya
发明人： Masahiro Shibuya
IPC分类号： B29D7/00
CPC分类号： B29C41/28 , B29K2105/0038 , G02B5/3033
摘要： This invention provides an optical film having a reduced thickness and an increased width, which is free from bleedout with the elapse of time (during storage) in a continuous wound state, a method for manufacturing an optical film, and a polarizing plate using the optical film. The optical film is a plasticizer-containing optical film having an overall width of 1500 mm to 4000 mm produced by a solution casting method. The amount of the plasticizer present in the center portion in the surface side of the optical film is determined as value A by TOF-SIMS. The amount of the plasticizer present in the center portion in the back side is determined as value B by the TOF-SIMS. Value X is determined by formula 1 based on the values A and B. The amount of the plasticizer present in the end portion in the surface side of the optical film is determined as value A′ by TOF-SIMS, and the amount of the plasticizer present in the end portion of the back side is determined as value B′ by the TOF-SIMS. Value X′ is determined by formula 2 based on the values A′ and B′. The X value is different from and larger than the X′ value.
摘要翻译：本发明提供了一种具有减小的厚度和增加的宽度的光学膜，其在连续缠绕状态下随着时间的流逝（在存储期间）没有渗出，光学膜的制造方法和使用光学的偏振片电影。光学膜是通过溶液流延法制造的总宽度为1500mm〜4000mm的含增塑剂的光学膜。存在于光学膜表面侧的中心部分的增塑剂的量通过TOF-SIMS确定为值A. 存在于背面中心部分的增塑剂的量通过TOF-SIMS确定为值B. 值X基于值A和B由公式1确定。存在于光学膜的表面侧端部的增塑剂的量由TOF-SIMS确定为值A'，增塑剂的量存在于背面的端部的TOF-SIMS被确定为值B'。值X'基于值A'和B'由公式2确定。 X值与X'值不同且大于X'值。

3. 发明授权

US5925506A Silver halide photographic light-sensitive material 失效
标题翻译：卤化银照相感光材料
公开(公告)号：US5925506A
公开(公告)日：1999-07-20
申请号：US962366
申请日：1997-10-31
申请人： Hirokazu Sato , Shigeo Chino , Masahiro Shibuya
发明人： Hirokazu Sato , Shigeo Chino , Masahiro Shibuya
IPC分类号： G03C7/00 , G03C1/047 , G03C1/053 , G03C1/40 , G03C1/43 , G03C1/76 , G03C1/79 , G03C1/815
CPC分类号： G03C1/815 , G03C1/7614 , G03C1/8155 , Y10S430/134
摘要： A silver halide photographic light-sensitive material is disclosed. The light-sensitive material comprises a support having on one surface thereof photographic layers including a silver halide emulsion layer, at least one of the photographic layers contains a fluorescent whitening agent, and satisfies the following equation 1:(A/B)
摘要翻译：公开了一种卤化银照相感光材料。感光材料包括在其一个表面上具有包含卤化银乳剂层的照相层的支撑体，至少一个照相层含有荧光增白剂，并满足下列等式1：（A / B）<0.03Equation 1，其中A是当感光材料被360nm的波长的激发光照射并且B是最大荧光的荧光强度时，在处理之前由感光材料产生的最大荧光波长处的荧光强度当经处理的感光材料被400nm的波长的激发光照射时，从处理后的未受光敏材料的光照射的区域产生的波长。

4. 发明授权

US06269034B1 Semiconductor memory having a redundancy judgment circuit 有权
标题翻译：具有冗余判定电路的半导体存储器
公开(公告)号：US06269034B1
公开(公告)日：2001-07-31
申请号：US09593210
申请日：2000-06-14
申请人： Masahiro Shibuya
发明人： Masahiro Shibuya
IPC分类号： G11C700
CPC分类号： G11C29/842 , G11C29/844
摘要： In a semiconductor memory having a redundancy circuit, when a defective cell is replaced with a redundancy cell, activation of a normal word line is retarded until it is judged whichever of a redundancy word line and a normal word line should be activated. The semiconductor memory has address pre-decoders enabling selection and driving of a normal word line, and a redundancy control circuit for judging whether a redundancy word line should be activated. The address pre-decoders and redundancy control circuit are controlled mutually independently. Irrespective of whether a redundancy word line is used, a normal word line can be controlled earlier. Consequently, the action of the whole semiconductor memory can be speeded up.
摘要翻译：在具有冗余电路的半导体存储器中，当用冗余单元替换有缺陷单元时，延迟正常字线的激活，直到判定冗余字线和正常字线中的哪一个被激活为止。半导体存储器具有能够选择和驱动正常字线的地址预解码器，以及用于判断冗余字线是否应被激活的冗余控制电路。地址预解码器和冗余控制电路相互独立地被控制。无论是否使用冗余字线，可以较早地控制正常字线。因此，可以加速整个半导体存储器的动作。

5. 发明授权

US06188620B1 Semiconductor memory device having a redundancy judgment circuit 有权
标题翻译：具有冗余判定电路的半导体存储器件
公开(公告)号：US06188620B1
公开(公告)日：2001-02-13
申请号：US09457731
申请日：1999-12-10
申请人： Masahiro Shibuya
发明人： Masahiro Shibuya
IPC分类号： G11C700
CPC分类号： G11C29/84 , G11C8/08 , G11C29/781
摘要： A semiconductor memory device includes a redundancy word driver to select a redundancy memory cell and a main word driver to select a normal memory cell, wherein it is judged on the basis of an address input whether a redundancy memory cell or a main word is selected and thereby, a time to drive a word line is shortened. In a redundancy judgment circuit, control signals RDC0 to activate redundancy word drivers and a control signal XDC to activate a main word driver are produced, by using dynamic NOR circuits and a dynamic AND circuit that can each set an initial state of an output signal thereof regardless of an input signal, wherein the control signals RDC and XDC in initial states are respectively set to levels at which the redundancy word drivers and main word driver are all inactive.
摘要翻译：一种半导体存储器件包括：冗余字驱动器，用于选择冗余存储单元;以及主字驱动器，用于选择正常存储单元，其中根据地址输入判断是冗余存储单元还是主字被选择，从而缩短了驱动字线的时间。在冗余判断电路中，通过使用动态NOR电路和动态AND电路来产生用于激活冗余字驱动器的控制信号RDC0和激活主字驱动器的控制信号XDC，每个动态NOR电路可以各自设置其输出信号的初始状态无论输入信号如何，其中初始状态下的控制信号RDC和XDC分别设置为冗余字驱动器和主字驱动器全部无效的电平。

6. 发明授权

US5273867A Silver halide photographic color light-sensitive material 失效
标题翻译：卤化银照相色感光材料
公开(公告)号：US5273867A
公开(公告)日：1993-12-28
申请号：US898144
申请日：1992-06-15
申请人： Masahiro Shibuya , Takashi Kadowaki
发明人： Masahiro Shibuya , Takashi Kadowaki
IPC分类号： G03C1/76 , G03C7/30 , G03C7/384 , G03C7/392 , G03C1/46
CPC分类号： G03C7/3003
摘要： A silver halide color photographic light-sensitive material is disclosed. The light-sensitive material comprises a support having thereon a photographic layer includinga silver halide emulsion layer comprising silver halide grains and a binder and a specific pyrazolone type magenta coupler,a non-light-sensitive layer comprising a binder and a compound of Formula II being a liquid at 15.degree. C., and provided adjacently to the surface of said silver halide emulsion layer closer to sais support, anda layer provided at the outermost position of said photographic layer containing a compound represented by Formula II; ##STR1## wherein R.sub.11 and R.sub.12 are each a secondary or tertiary alkyl group and a number of carbon atoms Contained in the groups represented by R.sub.11 and R.sub.12 is 20 or more in total.

7. 发明授权

US08318294B2 Optical film, process for producing the same, and polarization plate utilizing the film 有权
标题翻译：光学膜，其制造方法以及利用该膜的偏光板
公开(公告)号：US08318294B2
公开(公告)日：2012-11-27
申请号：US12310092
申请日：2007-07-12
申请人： Masahiro Shibuya
发明人： Masahiro Shibuya
IPC分类号： B29D11/00 , B32B9/00
CPC分类号： B29C41/28 , B29K2001/00 , B29K2001/12 , B29K2105/0038 , G02B5/3033
摘要： An optical film that even in the event of aging (storage) of optical film formed into thin film and large width in the form of lengthy roll, is free from the danger of sticking failure and protrusion failure attributed to uplift of the film due to local film friction; a process for producing such an optical film; and a polarization plate utilizing the optical film. The optical film is one of large width containing a plasticizer, produced by a solution casting process, wherein the value (X) calculated by formula (1) from the value (A) measured by TOF-SIMS with respect to the plasticizer lying in the surface-side central area of the optical film and the value (B) measured by TOF-SIMS with respect to the amount of plasticizer lying in the backside central area of the optical film is different from the value (X′) calculated by formula (2) from the value (A′) measured by TOF-SIMS with respect to the amount of plasticizer lying in the surface-side two lateral edge portions of the optical film and the value (B′) measured by TOF-SIMS with respect to the amount of plasticizer lying in the backside two lateral edge portions of the optical film, and wherein the value (X) is smaller than the value (X′).
摘要翻译：即使在长时间形成薄膜的情况下，光学薄膜老化（保存），宽度大的光学薄膜也不会由于局部的而导致由于薄膜隆起引起的粘着破坏和突起失败的危险膜摩擦; 制造这种光学膜的方法; 以及利用该光学膜的偏光板。光学膜是含有通过溶液流延法生产的增塑剂的宽度大的其中之一，其中通过式（1）计算的值（X）由TOF-SIMS测定的值（A）相对于位于光学膜的表面侧中心区域和通过TOF-SIMS测定的值（B）相对于位于光学膜的背面中心区域的增塑剂的量不同于由式（X'）计算的值（X' 2）与由TOF-SIMS测定的值（A'）相对于位于光学膜的表面侧两个侧边缘部分中的增塑剂的量和通过TOF-SIMS测量的值（B'）相对于所述增塑剂的量位于所述光学膜的背面两个侧边缘部分中，并且其中所述值（X）小于所述值（X'）。

8. 发明申请

US20100002297A1 OPTICAL FILM, PROCESS FOR PRODUCING THE SAME, AND POLARIZATION PLATE UTILIZING THE FILM 有权
标题翻译：光学膜，其制造方法以及利用薄膜的极化板
公开(公告)号：US20100002297A1
公开(公告)日：2010-01-07
申请号：US12438018
申请日：2007-07-12
申请人： Masahiro Shibuya
发明人： Masahiro Shibuya
IPC分类号： G02B1/08 , B32B5/00 , B29C39/38
CPC分类号： B29C41/28 , B29K2105/0038 , G02B5/3033
摘要： This invention provides an optical film having a reduced thickness and an increased width, which is free from bleedout with the elapse of time (during storage) in a continuous wound state, a method for manufacturing an optical film, and a polarizing plate using the optical film. The optical film is a plasticizer-containing optical film having an overall width of 1500 mm to 4000 mm produced by a solution casting method. The amount of the plasticizer present in the center portion in the surface side of the optical film is determined as value A by TOF-SIMS. The amount of the plasticizer present in the center portion in the back side is determined as value B by the TOF-SIMS. Value X is determined by formula 1 based on the values A and B. The amount of the plasticizer present in the end portion in the surface side of the optical film is determined as value A′ by TOF-SIMS, and the amount of the plasticizer present in the end portion of the back side is determined as value B′ by the TOF-SIMS. Value X′ is determined by formula 2 based on the values A′ and B′. The X value is different from and larger than the X′ value.
摘要翻译：本发明提供了一种具有减小的厚度和增加的宽度的光学膜，其在连续缠绕状态下随着时间的流逝（在存储期间）没有渗出，光学膜的制造方法和使用光学的偏振片电影。光学膜是通过溶液流延法制造的总宽度为1500mm〜4000mm的含增塑剂的光学膜。存在于光学膜表面侧的中心部分的增塑剂的量通过TOF-SIMS确定为值A. 存在于背面中心部分的增塑剂的量通过TOF-SIMS确定为值B. 值X基于值A和B由公式1确定。存在于光学膜的表面侧端部的增塑剂的量由TOF-SIMS确定为值A'，增塑剂的量存在于背面的端部的TOF-SIMS被确定为值B'。值X'基于值A'和B'由公式2确定。 X值与X'值不同且大于X'值。

9. 发明申请

US20090324921A1 OPTICAL FILM, PROCESS FOR PRODUCING THE SAME, AND POLARIZATION PLATE UTILIZING THE FILM 有权
标题翻译：光学膜，其制造方法以及利用薄膜的极化板
公开(公告)号：US20090324921A1
公开(公告)日：2009-12-31
申请号：US12310092
申请日：2007-07-12
申请人： Masahiro Shibuya
发明人： Masahiro Shibuya
IPC分类号： B29D11/00 , B32B9/00
CPC分类号： B29C41/28 , B29K2001/00 , B29K2001/12 , B29K2105/0038 , G02B5/3033
摘要： An optical film that even in the event of aging (storage) of optical film formed into thin film and large width in the form of lengthy roll, is free from the danger of sticking failure and protrusion failure attributed to uplift of the film due to local film friction; a process for producing such an optical film; and a polarization plate utilizing the optical film. The optical film is one of large width containing a plasticizer, produced by a solution casting process, wherein the value (X) calculated by formula (1) from the value (A) measured by TOF-SIMS with respect to the plasticizer lying in the surface-side central area of the optical film and the value (B) measured by TOF-SIMS with respect to the amount of plasticizer lying in the backside central area of the optical film is different from the value (X′) calculated by formula (2) from the value (A′) measured by TOF-SIMS with respect to the amount of plasticizer lying in the surface-side two lateral edge portions of the optical film and the value (B′) measured by TOF-SIMS with respect to the amount of plasticizer lying in the backside two lateral edge portions of the optical film, and wherein the value (X) is smaller than the value (X′).
摘要翻译：即使在长时间形成薄膜的情况下，光学薄膜老化（保存），宽度大的光学薄膜也不会由于局部的而导致由于薄膜隆起引起的粘着破坏和突起失败的危险膜摩擦; 制造这种光学膜的方法; 以及利用该光学膜的偏光板。光学膜是含有通过溶液流延法生产的增塑剂的宽度大的其中之一，其中通过式（1）计算的值（X）由TOF-SIMS测定的值（A）相对于位于光学膜的表面侧中心区域和通过TOF-SIMS测定的值（B）相对于位于光学膜的背面中心区域的增塑剂的量不同于由式（X'）计算的值（X' 2）与由TOF-SIMS测定的值（A'）相对于位于光学膜的表面侧两个侧边缘部分中的增塑剂的量和通过TOF-SIMS测量的值（B'）相对于所述增塑剂的量位于所述光学膜的背面两个侧边缘部分中，并且其中所述值（X）小于所述值（X'）。

10. 发明授权

US07320916B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07320916B2
公开(公告)日：2008-01-22
申请号：US10952381
申请日：2004-09-29
申请人： Hirotoshi Kubo , Yasuhiro Igarashi , Masahiro Shibuya
发明人： Hirotoshi Kubo , Yasuhiro Igarashi , Masahiro Shibuya
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/456
摘要： When Ti as a barrier metal layer is brought into contact with a diffusion region of boron provided on a surface of a silicon substrate, there is a problem that boron is absorbed by titanium silicide, and contact resistance is increased. Although there is a method of additionally implanting boron whose amount is equal to the amount of boron absorbed by titanium silicide, there has been a problem that when boron is additionally implanted into, for example, a source region in a p-channel type, the additionally added boron is diffused deeply at the diffusion step, and characteristics are deteriorated. According to the invention, after formation of an element region, boron is additionally implanted into the whole surface at a dosage of about 10% of an element region, and is activated in the vicinity of a surface of a silicon substrate by an alloying process of a barrier metal layer. By this, a specified concentration profile of the element region is kept, and the impurity concentration only in the vicinity of the surface can be raised. Accordingly, even if boron is absorbed by titanium silicide, a specified boron concentration can be kept in the element region, and the increase of contact resistance can be suppressed.
摘要翻译：当作为阻挡金属层的Ti与设置在硅衬底的表面上的硼的扩散区域接触时，存在硼被硅化钛吸收的问题，并且接触电阻增加。虽然存在另外注入硼量的方法，其量等于由硅化钛吸收的硼的量，但是存在如下问题：当将硼另外注入例如p沟道型的源极区时，在扩散步骤中另外添加硼深度扩散，特性劣化。根据本发明，在形成元件区域之后，以元素区域的约10％的剂量将硼额外地注入整个表面，并且通过合金化工艺在硅衬底的表面附近活化阻挡金属层。由此，保持元件区域的规定的浓度分布，仅能够提高表面附近的杂质浓度。因此，即使硼被硅化钛吸收，也可以在元件区域中保持规定的硼浓度，能够抑制接触电阻的增加。

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