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1. 发明授权

US5190712A Method for melt-molding water-soluble vinyl alcohol polymers 失效
标题翻译：熔融成型水溶性乙烯醇聚合物的方法
公开(公告)号：US5190712A
公开(公告)日：1993-03-02
申请号：US753165
申请日：1991-08-30
申请人： Tsukasa Oishi , Toru Seki , Takuya Honda
发明人： Tsukasa Oishi , Toru Seki , Takuya Honda
IPC分类号： C08F8/12 , C08J5/00
CPC分类号： C08J5/00 , B29C47/00 , C08F8/12 , C08F2800/10 , C08J2329/04 , F04C2210/26
摘要： A method for melt-molding a water-soluble vinyl alcohol polymer which includes melt-molding a water-soluble oxyalkylene group-containing vinyl alcohol copolymer under substantially anhydrous conditions and substantially without use of plasticizer, the copolymer having a vinyl alcohol unit (A), a vinyl ester unit (B) and an oxyalkylene ether unit (C) of the formulas: ##STR1## wherein R.sup.1 is an alkyl group; R.sup.2 and R.sup.3 each is a hydrogen atom or an alkyl group; R.sup.4 is a hydrogen atom, an alkyl group, a phenyl group or a substituted phenyl group; n is equal to 1 through 50; in proportions of a mol %, b mol % and c mol %, respectively, where0.1.ltoreq.c.ltoreq.20,50.ltoreq.100a/(a+b).ltoreq.100,and the oxyalkylene moiety (CHR.sup.2 --CHR.sup.3 --O--).sub.n of unit (C) accounts for 3 to 40 percent by weight of the total resin, and having a melt index of not less than 5 g/10 min. under a load of 2160 at a temperature of 210.degree. C.
摘要翻译：一种熔融模塑水溶性乙烯醇聚合物的方法，该方法包括在基本上无水条件下基本上不使用增塑剂熔融模塑含水溶性含氧化烯基的乙烯醇共聚物，所述共聚物具有乙烯醇单元（A），乙烯基酯单元（B）和下式的氧化烯醚单元（C）：（A）其中R 1是烷基;（B）其中R 1是烷基; R2和R3各自为氢原子或烷基; R4是氢原子，烷基，苯基或取代的苯基; n等于1到50; 分别为摩尔％，b摩尔％和c摩尔％，其中0.1≤i≤20,50≤（a + b）≤100，氧化烯部分（CHR2 单元（C）的-CHR 3 -O-）n占总树脂的3〜40重量％，熔体指数不小于5g / 10分钟。在2160℃的负荷下，在210℃的温度下

2. 发明申请

US20070226597A1 Semiconductor memory having embedded microcomputer with ECC function 有权
标题翻译：具有ECC功能的嵌入式微型计算机的半导体存储器
公开(公告)号：US20070226597A1
公开(公告)日：2007-09-27
申请号：US11651075
申请日：2007-01-09
申请人： Yasuhiko Taito , Masashi Muto , Eiji Sakuma , Tsukasa Oishi
发明人： Yasuhiko Taito , Masashi Muto , Eiji Sakuma , Tsukasa Oishi
IPC分类号： H03M13/00
CPC分类号： G06F11/1068 , G11C2029/0411
摘要： There is provided a semiconductor device of which the circuit scale does not significantly increase even with an ECC function. A microcomputer having an internal flash memory inserts one weight in a sense amplifier activation signal only when an error detection signal is on the H level at a given time in a read cycle or when the error detection signal which was on the H level in a previous read cycle has shifted to the L level in a current read cycle. This allows the retrieval of output data signals after waiting till the output data signals through error correction are determined only when an error is contained in the output data signals.
摘要翻译：提供了即使使用ECC功能，电路规模也不显着增加的半导体器件。具有内部闪速存储器的微型计算机仅在读取周期中的给定时间处于错误检测信号处于H电平时或者在前一个时间内处于H电平的错误检测信号时，在读出放大器激活信号中插入一个权重读取周期在当前读取周期中已经转移到L电平。这允许在等待直到通过错误校正的输出数据信号仅在输出数据信号中包含错误时才确定时才检索输出数据信号。

3. 发明授权

US5158810A Melt-molded articles and laminates derived therefrom, and their use 失效
标题翻译：熔融制品及其衍生的层压板及其使用
公开(公告)号：US5158810A
公开(公告)日：1992-10-27
申请号：US754827
申请日：1991-09-04
申请人： Tsukasa Oishi , Masaru Saeki , Munetoshi Tomita
发明人： Tsukasa Oishi , Masaru Saeki , Munetoshi Tomita
IPC分类号： B32B27/30 , C08J5/18 , C08L3/02 , C08L3/10 , C08L29/10 , D01F6/34
CPC分类号： C08J5/18 , B32B27/30 , C08L29/10 , C08L3/02 , C08L3/10 , D01F6/34 , C08J2303/02 , C08J2329/04 , Y10T428/13 , Y10T428/1307 , Y10T428/1341 , Y10T428/1362 , Y10T428/24124 , Y10T428/2904 , Y10T428/2913 , Y10T428/2929 , Y10T428/31511 , Y10T428/31855 , Y10T428/31909 , Y10T428/31971
摘要： A melt-molded article such as water soluble fibers, a laminate and a container for waste matter, the article having biodegradability. The melt molded article is produced by melt-molding a composition comprising an oxyalkylene group-containing vinyl alcohol copolymer and starch or a starch-derived macromolecular substance.

4. 发明授权

US08963650B2 Semiconductor device having on-chip oscillator for producing clock signal 有权
标题翻译：具有用于产生时钟信号的片上振荡器的半导体器件
公开(公告)号：US08963650B2
公开(公告)日：2015-02-24
申请号：US13571114
申请日：2012-08-09
申请人： Tsukasa Oishi , Katsuyoshi Mitsui , Naoki Otani
发明人： Tsukasa Oishi , Katsuyoshi Mitsui , Naoki Otani
IPC分类号： H03L1/00 , H03L1/02
CPC分类号： H03B5/04 , H03L1/00 , H03L1/026
摘要： A semiconductor device contrived to prevent a reference voltage and a reference current which are supplied to a high speed OCO from varying with a change in ambient temperature and/or a change in an external power supply voltage and to reduce the circuit area of a power supply module. The high speed OCO outputs a high speed clock whose magnitude is determined by the reference current and the reference voltage. A logic unit adjusts the values of the reference current and reference voltage, according to the reference voltage and reference current trimming codes related to detected ambient temperature and operating voltage.
摘要翻译：设计用于防止提供给高速OCO的参考电压和参考电流随着环境温度的变化和/或外部电源电压的变化而变化并减小电源的电路面积的半导体器件模块。高速OCO输出高速时钟，其大小由参考电流和参考电压决定。逻辑单元根据与检测到的环境温度和工作电压相关的参考电压和参考电流调整代码来调整参考电流和参考电压的值。

5. 发明授权

US07779333B2 Semiconductor memory having embedded microcomputer with ECC function 有权
标题翻译：具有ECC功能的嵌入式微型计算机的半导体存储器
公开(公告)号：US07779333B2
公开(公告)日：2010-08-17
申请号：US11651075
申请日：2007-01-09
申请人： Yasuhiko Taito , Masashi Muto , Eiji Sakuma , Tsukasa Oishi
发明人： Yasuhiko Taito , Masashi Muto , Eiji Sakuma , Tsukasa Oishi
IPC分类号： G11C29/00
CPC分类号： G06F11/1068 , G11C2029/0411
摘要： There is provided a semiconductor device of which the circuit scale does not significantly increase even with an ECC function. A microcomputer having an internal flash memory inserts one weight in a sense amplifier activation signal only when an error detection signal is on the H level at a given time in a read cycle or when the error detection signal which was on the H level in a previous read cycle has shifted to the L level in a current read cycle. This allows the retrieval of output data signals after waiting till the output data signals through error correction are determined only when an error is contained in the output data signals.
摘要翻译：提供了即使使用ECC功能，电路规模也不显着增加的半导体器件。具有内部闪速存储器的微型计算机仅在读取周期中的给定时间处于错误检测信号处于H电平时或者在前一个时间内处于H电平的错误检测信号时，在读出放大器激活信号中插入一个权重读取周期在当前读取周期中已经转移到L电平。这允许在等待直到通过错误校正的输出数据信号仅在输出数据信号中包含错误时才确定时才检索输出数据信号。

6. 发明授权

US08264294B2 Semiconductor device having on-chip oscillator for producing clock signal 失效
标题翻译：具有用于产生时钟信号的片上振荡器的半导体器件
公开(公告)号：US08264294B2
公开(公告)日：2012-09-11
申请号：US13021047
申请日：2011-02-04
申请人： Tsukasa Oishi , Katsuyoshi Mitsui , Naoki Otani
发明人： Tsukasa Oishi , Katsuyoshi Mitsui , Naoki Otani
IPC分类号： H03L1/00
CPC分类号： H03B5/04 , H03L1/00 , H03L1/026
摘要： A semiconductor device contrived to prevent a reference voltage and a reference current which are supplied to a high speed OCO from varying with a change in ambient temperature and/or a change in an external power supply voltage and to reduce the circuit area of a power supply module. The high speed OCO outputs a high speed clock whose magnitude is determined by the reference current and the reference voltage. A logic unit adjusts the values of the reference current and reference voltage, according to the reference voltage and reference current trimming codes related to detected ambient temperature and operating voltage.
摘要翻译：设计用于防止提供给高速OCO的参考电压和参考电流随着环境温度的变化和/或外部电源电压的变化而变化并减小电源的电路面积的半导体器件模块。高速OCO输出高速时钟，其大小由参考电流和参考电压决定。逻辑单元根据与检测到的环境温度和工作电压相关的参考电压和参考电流调整代码来调整参考电流和参考电压的值。

7. 发明授权

US07630242B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07630242B2
公开(公告)日：2009-12-08
申请号：US12073834
申请日：2008-03-11
申请人： Yasuhiko Taito , Naoki Otani , Tomohisa Iba , Tsukasa Oishi
发明人： Yasuhiko Taito , Naoki Otani , Tomohisa Iba , Tsukasa Oishi
IPC分类号： G11C16/04
CPC分类号： G11C16/16 , H01L27/0207 , H01L27/105 , H01L27/11519 , H01L27/11526 , H01L27/11529
摘要： With this flash memory, because a plurality of memory blocks are formed on a surface of a single P-type well, a layout area can be made small. Further, when erasing data for a memory block to be erased, a voltage of the P-type well is applied to all word lines of a memory block to be not erased. Consequently, the voltage of the P-type well and the voltage of all word lines of the memory block to be not erased change at the same time. With this, it is possible to prevent a threshold voltage for the memory block to be not erased from changing.
摘要翻译：利用该闪速存储器，由于在单个P型阱的表面上形成多个存储块，因此可以使布局区域变小。此外，当擦除要擦除的存储块的数据时，P型阱的电压被施加到存储块的所有字线以便不被擦除。因此，P型阱的电压和不被擦除的存储器块的所有字线的电压同时变化。由此，可以防止存储块的阈值电压不被擦除。

8. 发明授权

US5849376A Multi-layered laminate comprising hydrolyzed EVOH and use thereof 失效
标题翻译：包含水解EVOH的多层层压材料及其用途
公开(公告)号：US5849376A
公开(公告)日：1998-12-15
申请号：US699465
申请日：1996-08-19
申请人： Tsukasa Oishi , Masahiko Toyozumi
发明人： Tsukasa Oishi , Masahiko Toyozumi
IPC分类号： B32B27/32 , B32B5/14 , B32B9/04 , B32B27/30
CPC分类号： B32B27/32 , Y10T428/1328 , Y10T428/31913 , Y10T428/31935
摘要： A laminate having an excellent gas barrier property and an improved organic solvent resistance and suitable for use in containers for chemicals and volatile materials such as organic solvents and fuels. The laminate comprises: (A) a layer comprising (A1) a hydrolyzed ethylene-vinyl acetate copolymer having an ethylene content of 10 to 70% by mole and a degree of hydrolysis of at least 85% by mole, (B) a layer of a resin composition comprising (B1) a polyolefin resin and (B2) 0.5 to 40% by weight, based on said polyolefin (B1), of a hydrolyzed ethylene-vinyl acetate copolymer having an ethylene content of 10 to 70% by mole and a degree of hydrolysis of at least 85% by mole, (C) an outer layer of a polyolefin resin disposed on the outer side of said layer (A), and optionally an outer layer of said polyolefin resin (C) disposed on the other side and at least one adhesive layer disposed between adjacent two layers, wherein the ratio of the apparent melt viscosity of said polyolefin (B1) to that of said hydrolyzed copolymer (B2) at a rate of shear of 100 cm.sup.-1 and at 230.degree. C. is from 0.1 to 50.
摘要翻译：具有优异的阻气性和改善的耐有机溶剂性并且适用于化学品和挥发性物质如有机溶剂和燃料的容器中的层压体。层压体包括：（A）包含（A1）乙烯含量为10〜70摩尔％，水解度为85摩尔％以上的水解乙烯 - 乙酸乙烯酯共聚物的层（A），（B）一种树脂组合物，其包含（B1）聚烯烃树脂和（B2）基于所述聚烯烃（B1）0.5至40重量％的乙烯含量为10至70摩尔％的水解乙烯 - 乙酸乙烯酯共聚物和水解度至少为85摩尔％，（C）设置在所述层（A）的外侧的聚烯烃树脂的外层，以及任选设置在另一侧的所述聚烯烃树脂（C）的外层以及设置在相邻两层之间的至少一个粘合剂层，其中所述聚烯烃（B1）与所述水解共聚物（B2）的表观熔体粘度在100cm -1的剪切速率和230℃下的比例为0.1〜50。

9. 发明申请

US20080225592A1 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20080225592A1
公开(公告)日：2008-09-18
申请号：US12073834
申请日：2008-03-11
申请人： Yasuhiko Taito , Naoki Otani , Tomohisa Iba , Tsukasa Oishi
发明人： Yasuhiko Taito , Naoki Otani , Tomohisa Iba , Tsukasa Oishi
IPC分类号： G11C5/02
CPC分类号： G11C16/16 , H01L27/0207 , H01L27/105 , H01L27/11519 , H01L27/11526 , H01L27/11529
摘要： With this flash memory, because a plurality of memory blocks are formed on a surface of a single P-type well, a layout area can be made small. Further, when erasing data for a memory block to be erased, a voltage of the P-type well is applied to all word lines of a memory block to be not erased. Consequently, the voltage of the P-type well and the voltage of all word lines of the memory block to be not erased change at the same time. With this, it is possible to prevent a threshold voltage for the memory block to be not erased from changing.
摘要翻译：利用该闪速存储器，由于在单个P型阱的表面上形成多个存储块，因此可以使布局区域变小。此外，当擦除要擦除的存储块的数据时，P型阱的电压被施加到存储块的所有字线以便不被擦除。因此，P型阱的电压和不被擦除的存储器块的所有字线的电压同时变化。由此，可以防止存储块的阈值电压不被擦除。

10. 发明授权

US5373054A Process for agglomerating powder 失效
标题翻译：聚集粉末的方法
公开(公告)号：US5373054A
公开(公告)日：1994-12-13
申请号：US987995
申请日：1992-12-09
申请人： Shinji Sanuki , Yoshinori Chosakon , Tsukasa Oishi
发明人： Shinji Sanuki , Yoshinori Chosakon , Tsukasa Oishi
IPC分类号： C08J3/12 , C08L29/04 , C08L33/24 , C08L33/26
CPC分类号： C08J3/12 , C08J3/16 , C08J2300/10 , C08J2300/14 , Y10S525/934
摘要： A process for agglomerating a polymer powder which comprises mixing a polymer powder with an oxyalkylene group-containing polyvinyl alcohol resin in the presence of water and drying the resulting mixture. According to the process of the present invention, it is possible to easily prepare the polymer granules having little fine powder, a narrow particle size distribution and a large average particle size.
摘要翻译：聚合物粉末的聚集方法，其包括在水存在下将聚合物粉末与含氧化烯基的聚乙烯醇树脂混合并干燥所得混合物。根据本发明的方法，可以容易地制备具有很小细粉末，窄粒度分布和大平均粒径的聚合物颗粒。

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